The paper presents the results of a study on the distribution of lithium in a solid-state thin-film lithium-ion battery using the Rutherford backscattering spectrometry (RBS) method. The analysis employs He+ ions with an energy of 1.8 MeV, scattered at an angle of 165° with normal incidence to the surface. Based on the energy loss of scattered ions, we determine the concentration of Li ions in the battery layers in both charged and discharged states. The study shows that the Li-concentration values obtained through the RBS method and the galvanostatic-measurement method coincide, provided that the specific stopping cross section for lithium εLi in the anode layer is half of that in the single-element substance.

The electrochemical exfoliation of graphite is studied via X-ray diffractometry and Rutherford backscattering spectrometry. It is shown this process allows graphite particles to be obtained with virtually half the normal crystallite size, and thus the number of graphene layers in them. The effect the parameters of exfoliation have on the chemical composition of the resulting graphite particles is established.

We have evaluated possibilities of using the method of Rutherford backscattering spectrometry (RBS) for depth profiling of multilayer thin-film structures containing nanodmensional layers of elements with close atomic masses. It is established that RBS measurements can ensure high precision determination of the composition of these multilayer structures, total film thickness, and thicknesses of separate layers. This ability can be used for the input quality control of multilayer structures used in micro- and nanotechnologies.

The results of the study of the possibilities of the Rutherford backscattering spectrometry (RBS) for analysis of a multilayer structure containing nanometer scale layers with elements of similar masses are presented. It is shown that RBS allows to measure the composition of such structures, as well as the film thickness as a whole and the thickness of individual layers with a sufficiently high accuracy, and can be used as an input control of technological structures used in micro- and nanotechnologies.

The influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is studied. Measurements by the technique of the Rutherford backscattering of medium- and high-energy ions demonstrates that implantation with 1-MeV germanium ions at a dose of 1.5 × 1014 cm–2 does not lead to the amorphization of single-crystal silicon. It is found that subsequent high-temperature annealing of the implanted samples in a chlorine-containing atmosphere at a temperature of 1100°C for 0.5–1.5 h gives rise to so-called D1 and D2 dislocation-related luminescence lines with wavelengths of 1.54 and 1.42 μm. With increasing annealing duration, the intensity of the D1 line decreases and that of D2 remains constant, but the D1 line dominates in all the spectra. The possible factors responsible for a decrease in the intensity of the D1 line and, in particular, the diffusion of germanium atoms and the formation of a silicon–germanium solid solution are discussed.

The results of depth profiling a four layered Si–O−Al thin film with different concentrations of elements in the layers are presented. Secondary-ion mass spectrometry (SIMS) and Rutherford backscattering (RBS) facilities are used to obtain the depth distributions of the element densities in the film. The data of analysis by the SIMS method are used as the initial concentration profiles in processing the Rutherford backscattering spectra using the SIMNRA program. As a result, a model film structure is constructed that describes the spectra of Rutherford backscattering obtained under various experimental measurement conditions, refines the results of analysis by the SIMS method and allows quantitative distributions with respect to the depth of the element concentration and the film density to be obtained.

The implantation of Czochralski-grown p-type silicon with 1-MeV germanium ions at a dose of 2.5 × 1014 cm–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.

AbstractThe influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is studied. Measurements by the technique of the Rutherford backscattering of medium- and high-energy ions demonstrates that implantation with 1-MeV germanium ions at a dose of 1 . 5 × 10^14 cm^–2 does not lead to the amorphization of single-crystal silicon. It is found that subsequent high-temperature annealing of the implanted samples in a chlorine-containing atmosphere at a temperature of 1100°C for 0.5–1.5 h gives rise to so-called D1 and D2 dislocation-related luminescence lines with wavelengths of 1.54 and 1 . 42 μm. With increasing annealing duration, the intensity of the D1 line decreases and that of D2 remains constant, but the D1 line dominates in all the spectra. The possible factors responsible for a decrease in the intensity of the D1 line and, in particular, the diffusion of germanium atoms and the formation of a silicon–germanium solid solution are discussed.

AbstractThe implantation of Czochralski-grown p -type silicon with 1-MeV germanium ions at a dose of 2 . 5 × 10^14 cm^–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor centers are transformed. Their concentration and special distribution depend on the annealing temperature. The possible factors determining how these centers are formed are discussed.

Photoluminescence spectra of n-type silicon upon implantation with erbium ions at 600°C and oxygen ions at room temperature and subsequent annealings at 1100°C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra at 80 K are dominated by lines of the Er3+ ion or dislocation-related luminescence. The short-wavelength shift of the dislocation-related luminescence line observed at this temperature is due to implantation of erbium ions at an elevated temperature. At room temperature, lines of erbium and dislocation-related luminescence are observed in the spectra, but lines of near-band-edge luminescence predominate.

Features appearing in the photo-and electroluminescence spectra of light-emitting structures based on MBE-grown Si: Er layers are studied. The luminescence properties of Si layers implanted by Er and O ions were used as a reference. The temperature quenching of the photoluminescence intensity of Er-containing centers in MBE-grown and implanted layers can be approximated adequately by the same functional relationships with equal activation energies but with preexponential factors differing by more than two orders of magnitude. It is shown that the electroluminescence of Er 3+ ions can be increased by additional coimplantation of erbium and oxygen ions into MBE-grown light-emitting diode structures and subsequent annealing. After this treatment, the Er-containing centers continue to dominate the luminescence spectrum.

Room-temperature photoluminescence (PL) has been studied in AlGaN/GaN superlattices and GaN epitaxial layers implanted with 1-MeV erbium at a dose of 3 × 1015 cm−2 and annealed in argon. The intensity of PL from Er3+ ions in the superlattices exceeds that for the epitaxial layers at annealing temperatures of 700–1000°C. The strongest difference (by a factor of ∼2.8) in PL intensity between the epitaxial layers and the superlattices and the highest PL intensity for the superlattices are observed upon annealing at 900°C. On raising the annealing temperature to 1050°C, the intensity of the erbium emission from the superlattices decreases substantially. This circumstance may be due to their thermal destruction.

Structural defects and optical features of p-type CzSi after implantation of erbium ions with 1 MeV energy and 1×1014 cm−2 dose followed by annealing at (620–1100°C) for 0.5–1.0 h in chlorine-containing atmosphere (CCA) or argon have been studied by transmission electron microscopy (TEM), optical microscopy in combination with selective chemical etching, and photoluminescence (PL). High temperature annealing in the chlorine-containing ambience gives rise to perfect prismatic dislocation loops as well as 60° and pure edge dislocations with dominant dislocation-related lines in the PL spectrum. Pure edge dislocations are responsible for the appearance of the lines. The Er-related lines due to the intra-4f shell transitions in the rare earth ions dominate in the PL spectra and no structural defects are observed after high temperature annealing in argon. The role of the intrinsic point defects in the transformation of structural defects and optically active centers is discussed.

This paper presents an overview of the current state of fabrication technology of Er-doped Si and investigates its optical, electrical and structural properties. Tasks for further research into light-emitting Si:Er structures are formulated.

The influence of rapid-anneal conditions and subsequent coimplantation of oxygen ions on the photoluminescence of erbium ions implanted with an energy of 1 MeV and dose of 5×1014 cm−2 in MOCVD-grown GaN films is investigated. The erbium photoluminescence intensity at a wavelength ∼ 1.54 µm increases as the fixed-time (15 s) anneal temperature is raised from 700 °C to 1300 °C. The erbium photoluminescence intensity can be increased by the coimplantation of oxygen ions at anneal temperatures in the indicated range below 900 °C. The transformation of the crystal structure of the samples as a result of erbium-ion implantation and subsequent anneals is investigated by Raman spectroscopy.

Structural defects arising in Cz–Si wafers after implantation with high-energy ions of rare-earth elements (Er, Ho, Dy) and annealing in a chlorine-containing ambience were studied by transmission electron microscopy and chemical etching/Nomarski microscopy. Regularities of extended defect formation in dependence on implant and annealing conditions as well as evolution of structural defect patterns during thermal annealing have been established.

In this paper the photoluminescence (PL) of holmium-doped silicon is discussed. The silicon was first implanted with holmium ions at energies of 1–2 MeV and doses of 1×1013–3×1014 cm−2, and then annealed at temperatures of 620–900 °C for 0.5–1 h. In order to increase the concentration of electrically and optically active centers, the silicon was implanted a second time with oxygen ions at energies of 0.14–0.29 MeV and doses of 1×1014–3×1015 cm−2. Several photoluminescence lines, which are attributable to the transitions of electrons from the first excited state of the Ho3+ ion (5I7) to the ground state (5I8), were observed. The amplitudes of the most intense lines, which correspond to transitions at frequencies 5119 and 5103 cm−1, decreased by more than an order of magnitude in the temperature range 4.2−78 K. The PL intensity of the holmium ions increased with increasing concentrations of the implanted rare-earth ions and oxygen.