The design and operation of a cascade matrix electron flow amplifier based on an electron concentrator multiplier is considered. Unlike classical microchannel plates, the proposed amplifier can provide a high density of output current, which also allows it to be used as a field cathode in vacuum microelectronics of giga and terahertz ranges.

The design and operation of a cascade matrix electron flow amplifier based on an electron concentrator multiplier is considered. Unlike classical microchannel plates, the proposed amplifier can provide a high density of output current, which also allows it to be used as a field cathode in vacuum microelectronics of giga and terahertz ranges. Keywords: Microchannel plate, secondary emission, screening, electron concentrator multiplier, field cathode.

The results of investigations of solar-blind image converter tubes (ICTs), sensitive in the vacuum-ultraviolet (VUV) spectral range are presented. Sensitive-conversion layers of photocathodes based on boron-doped polycrystalline diamond films were grown up on sapphire substrates for the first time. Electron flow multipliers (EFMs) were fabricated in the form of diamond grid. Solar-blind VUV ICTs without the EFM are characterized by spectral sensitivity range of 180...250 nm, estimate of the threshold sensitivity value -10-9 W/Hz0.5 and current sensitivity -12 - 15 mA/W. Solar-blind VUV ICTs comprising the electron flow multipliers are characterized by extended spectral sensitivity range of 180...270 nm, improved estimate of the threshold sensitivity value 10-11... 5 x 10-12 W/Hz 0.5 and current sensitivity 50 mA/W.

The results of investigations of solar-blind image converter tubes (ICTs), sensitive in the ultraviolet spectral range are presented. Photocathodes sensitive layers of the ICT are based on boron-doped polycrystalline diamond films were grown up on sapphire substrates for the first time. Spectral range of the ICT sensitivity is 180…250 nm, the threshold sensitivity value without the electron flow multiplier ~ 10-9 W/Hz0.5 and spectral sensitivity ~ 12 - 15 mA/W.

Ultraviolet solar-blind electron-optical converters with photocathode sensor layers made of polycrystalline boron-doped diamond films, which were for the first time grown on sapphire, are studied. The spectral sensitivity range of the obtained converters is 180–250 nm, the threshold sensitivity without the electron flux multiplier is no worse than ∼10–9 W/Hz0.5, and the spectral sensitivity is 12–15 mA/W.

The use of diamond photocathodes and electron flow multipliers in high-frequency vacuum micro- and nanoelectronics is discussed. Vacuum microtriode (microtube) and electron gun for integrated travelling-wave tube amplifiers are considered as the main devices of this kind.

The use of diamond photocathodes and electron flow amplifiers in high-frequency vacuum micro and nanoelectronics is analyzed. The main devices are a vacuum microtriode and an electron gun for an integral traveling wave tube.

Theoretical and experimental data of the electron beam passage through graphene taking into account reflection of electrons are obtained. Theoretical estimates were made by considering the motion of an electron in a central force field which was modeled as a positively-charged carbon nucleus screened by the Thomas-Fermi potential. Along with the theoretical estimates, the results of experimental studies, obtained on the basis of a specially developed stand in which the electron beam was generated by irradiation of a diamond photocathode by vacuum ultraviolet, are presented. A comparison of the theoretical and experimental data showed that the experimental estimate of the passage of an electron through graphene is in good agreement with the calculated data when the first reflection is taken into account. The greatest discrepancies were observed for small values of the electron energy. The obtained results show that at the electron energies of > 35 eV the electron almost freely penetrates through the graphene membrane and it corresponds to the results published earlier, and at energies < 20 eV the data differ strongly. This fact shows that in this energy range it is necessary to continue studying the graphene's transparency. Major part of the work is devoted to the use of graphene membranes electron transparency for developing a number of unique devices and systems. These are vacuum ultraviolet radiation matrix detectors that are not sensitive to solar radiation, flat terminals with the properties of cathode ray tubes, image converter based on a vacuum emission triode, and self-excited oscillation memory cells for archival memory. It is noted that these devices and systems can be developed on the basis of existing technologies for the graphene films production.

Diamond membranes are capable of amplifying electron flux, but membranes with dimensions exceeding 10 mm 2 are subject to deformation and sagging. In order to avoid this, it is suggested to build electron flux amplifier on a silicon grating coated with a diamond film. The possibility of using these gratings instead of microchannel plates is discussed, in particular, in cases where this grating directly plays the role of X-ray, UV, or proton detector.

Boron-doped homoepitaxial diamond films are deposited from ethanol/trimethyl borate/hydrogen mixtures activated by microwave (MW) discharge plasma. The high smoothness, uniform distribution of boron atoms located predominantly in substitution positions, and low concentration of the nitrogen-compensating impurity is achieved. C2H5OH dissociation pathways in MW plasma-activated (PA)CVD reactor conditions, and the distribution of CxHyOz concentrations in the hot core of C2H5OH/H2 plasma are calculated. It is shown that the methyl radical is as responsible for diamond growth in C2H5OH/H2 mixtures as for a conventional CH4/H2 mixture.

A new technology of forming micropatterned masks for the etching of diamond films is proposed, which makes possible high-precision lithography on the samples with areas up to 10(4) mm(2). A minimum element size that can be achieved is only determined by the level of lithography accessible for silicon-based integrated circuits. The proposed technology can be used in creating unique devices, including biosensor chips for human genome decoding.

A multiple-beam X-ray tube on the basis of field emitters has been designed and developed. The Xray tube is powered by 140 kV anode supply. Each beam is driven by I kV cathode to grid supply. Electron trajectories calculation and experimental measurement of I-V characteristics are presented.

Boron doped polycrystalline diamond films were grown using MW PE CVD method. Optical emission spectra (OES) of MW-plasma in the region from 200 nm to 800 nm during boron doped polycrystalline diamond films growth were in situ investigated. Raman spectroscopy method was used for morphology investigation of grown polycrystalline diamond films. Also, absorption spectroscopy method was used for optical properties investigation of all grown films.

Electron phase trajectories for high frequency Ku-band in a diode with a nanocrystalline graphite (NCG) field emitter are compared with one with a thermo-cathode. It is shown that the field electron (FE) cathode differs from the thermo-cathode and forms short electron bunches, which can be efficiently decelerated in an output cavity. The scheme and advantages of a triode generator with a FE cathode are described. 1-D analytical evaluation of output power for the triode generator is carried out. The conclusion is drawn that maximum output power strongly depends on current density, and rises up to 80 W for 15 A/cm2.

The effect of the degree of doping polycrystalline diamond films by boron on their Raman and absorption spectra has been studied in the visible region (from 200 to 1000 nm). As the boron concentration increases in a polycrystalline diamond film, its Raman spectrum exhibits a number of new specific features caused by the effect of boron atoms on the diamond lattice. The dependences that relate these features to the boron concentration in the films are given. Moreover, the absorption spectra of the films have revealed a peak whose maximum corresponds to photons with an energy near 2 eV.

Control grids used in high-current devices with field emission cathodes should be made of an appropriate, “grid-grade” material. Such a material must offer a high mechanical strength, thermal conductivity, and electric conductivity. In addition, grids as thin as several microns must be available. As a grid material, boron-doped diamond is tested.

Secondary electron emission from 2.5-to 5.0-µm thick diamond films (membranes) is considered. The process is studied in the reflection regime, where secondary electrons leave the front surface of the membrane exposed to primary electrons, and in the transmission regime, where primary electrons cause secondary emission from the opposite surface. The secondary emission coefficient is determined based on the behavior of 0.1-to 30-keV electrons in the solid. In the reflection regime, the secondary emission coefficient may be higher than 100 for electron energies of about 3 keV; in the transmission regime, it is no more than 5 even for 30-keV electrons. The emissivity of the membranes in the transmission regime can be improved, specifically, by using porous membranes, which allow one to obtain characteristics similar to those in the reflection regime. Experimental data obtained agree with calculations. The production of diamond films, including porous membranes, is described.

We report the scanning tunneling microscope induced band-A emission from boron-doped polycrystalline diamond films fabricated by chemical-vapor deposition (CVD). The broad blue emission occurs at a bias above ±3.4 V with double peaks at 410 and 450 nm and is attributed to the dislocation-related defect centers. Greatly enhanced green emissions around 530 nm are observed at high positive bias. This, together with strongly bias- and polarity-dependent emission intensities and spectra, leads us to propose that the boost in the green emission at high bias is probably related to the minority electron injection into the boron-related acceptor states in the subsurface.