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论文（9）

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1ТИПОВЫЕ И ПРЕДЕЛЬНЫЕ УРОВНИ РАДИАЦИОННОЙ СТОЙКОСТИ КОМПОНЕНТОВ РАДИОФОТОННЫХ СИСТЕМ И ОПТОЭЛЕКТРОННЫХ УСТРОЙСТВ

А.А. Печенкин,М.Е. Черняк,Р.К. Можаев,Д.С. Уколов,В.П. Лукашин,А.В. Уланова,А.Ю. Никифоров,В.А. Телец

В работе представлен обзор типовых и предельных уровней радиационной стойкости полупроводниковых лазерных излучателей, приемопередающих оптических модулей, оптических волокон, одиночных и матричных фотоприемных устройств, пассивных компонентов ВОЛС.

2020NANOINDUSTRY Russia（2020）

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2Practical Evaluation of Optocouplers TID-Hardness Research Method Using an X-ray Unit

S. V. Novikov,M. E. Cherniak,R. K. Mozhaev,D. V. Boychenko

The article describes an optoisolators radiation hardness testing method to the effects of absorbed dose using an x-ray unit. Technological issues and features of the research are highlighted.

20192019 IEEE 31ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL 2019)引用：1

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3Comparative Assessment of Digital and UHF Optoelectronic Transceivers Radiation Hardness

R. K. Mozhaev,M. E. Cherniak,A. A. Pechenkin,A. V. Ulanova,A. Y. Nikiforov

A method for radiation hardness evaluation of digital and microwave transmitting-receiving optoelectronic modules is presented. The technical aspects of parameters monitoring during exposure are described. The most vulnerable components of optoelectronic modules are identified.

20192019 IEEE 31st International Conference on Microelectronics (MIEL)（2019）

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4Метод Определения Наиболее Чувствительной Области Кристалла Оптрона При Дозовом Воздействии С Помощью Рентгеновского Источника

М. Е. Черняк, Е. В. Раннева,А. В. Уланова,А. Ю. Никифоров, А. И. Верижников, А. М. Цырлов, В. С. Федосов, А. Н. Щепанов,В. Д. Калашников, Д. О. Титовец

2019Микроэлектроника

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5Software and Hardware System for Charge Coupled Devices with Interline Transfer of Charge Parameters Monitoring During Radiation Tests

V. P. Lukashin,M. E. Cherniak,A. O. Akhmetov,A. Y. Nikiforov,A. V. Ulanova

The paper presents a method of device monitoring during radiation testing for charge coupled devices with interline transfer (hereinafter -- CCD). The results of heavy ions, dose rate and total ionizing dose tests are presented together with the description of the developed software and hardware set-up based on the National Instruments platform and on the designed specialized equipment adapted for radiation tests.

20192019 IEEE 31st International Conference on Microelectronics (MIEL)引用：1

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6Research of Quantum Well Laser Diode’s and Heterostructural P-I-N Photodiode’s of Fiber-Optic Modules Radiation Hardness to Gamma-ray and Neutron Irradiation

R K Mozhaev,M E Cherniak

2018KnE Energy引用：1

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7Study of Gamma-ray Induced Attenuation of Fluorine-doped Single-mode Radiation Hard Optic Fiber

D S Ukolov,M E Cherniak,R K Mozhaev

2018KnE Energy引用：1

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8Estimation Technique for LED Sensitivity to Structural Damage Based on Minority Carriers Lifetime Measurements

R. K. Mozhaev,M. E. Cherniak,A. V. Ulanova,A. Y. Nikiforov

The paper discusses the Minority Carriers Lifetime Measurements method for a light emitter in an optocoupler. The method can be used both to identify the manufacturing process and to predict the sensitivity to structural (displacement) damage caused by neutron irradiation.

20172017 IEEE 30th International Conference on Microelectronics (MIEL)引用：5

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9Analysis of the Effect of the Interline Ccd-Sensor Dark Signal Increasing During Gamma-Irradiation

M. E. Cherniak,A. V. Ulanova,A. Yu Nikiforov

This paper discusses results of the study of a dark signal degradation of visible range interline transfer CCD during gamma-irradiation.

2016V INTERNATIONAL CONFERENCE OF PHOTONICS AND INFORMATION OPTICS（2016）引用：2

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