In this work, we have investigated the photocurrent and spectral sensitivity of the silicon/SrTiO3:xNb/perovskite structures. The sol–gel method carried out the deposition of undoped SrTiO3 layers as well as niobium-doped (SrTiO3:Nb) layers at atomic concentrations of 3 and 6% Nb. The perovskite layer, CH3NH3PbI3−xClx, has been deposited by the vacuum co-evaporation technique. The layers have been characterized by scanning electron microscopy and X-ray diffraction measurements. The volt–ampere characteristics and spectral sensitivity of the fabricated samples have been measured under illumination with selective wavelengths of 405, 450, 520, 660, 780, 808, 905, 980, and 1064 nm of laser diodes. We have shown that for different configurations of applied voltage between silicon, SrTiO3:xNb, and CH3NH3PbI3−xClx, the structures are photosensitive ones with a variation of photocurrent from microamperes to milliamperes depending on Nb concentration in SrTiO3, and the highest photocurrent and spectral sensitivity values are observed when a SrTiO3:Nb layer with 3 at.% of Nb is used. A possible application of the proposed structure with a SrTiO3:Nb layer for perovskite solar cells and photodetectors is being discussed.

This work presents the results of a study aimed at finding ways to significantly shift the maximum sensitivity of ZnO films to UV radiation towards shorter wavelengths. It is proposed to use thin films of the composition ZnO:xMgO with a band gap of more than 5 eV, obtained by the sol-gel technique, as an active media for creating receivers for the visible-blind range of the UV region of the spectrum. Also the optical and photoelectric properties of ZnO:xMgO films have been investigated as well.

The present work aims to design and study novel functional thin films with piezoelectrical properties. SrBi2(TaxNb1−x)2O9 thin films were synthesized by sol–gel method on Pt/Ti/SiO2/Si substrates. The influence of the synthesis conditions and the presence of a co-activator on the features of the nanostructural and piezoelectric properties were determined. The PFM method was applied to visualize not only the morphology of grains, but also their local piezoelectric activity.