We report the achievement of buried single-mode waveguides in special Boro-Aluminum-Silicate glass. The waveguides are characterized by very low propogation loss (<.01dB/cm) and negligible birefringence. The optical mode at the input and output ports is essentially identical to the mode of a standard single-mode optical fiber. We fabricated and tested several devices and report here 1×8 and 1×16 powers spitters and an interleaver defined for a 100GHz DWDM network. Due to the low birefringence of the waveguides, the TE and TM responses of the device are undistinguishable by customary characterization equipment. In addition we report a technique for permanent trimming of the otpical circuit by localized heating. This unique advantage of ion-exchange technology, allowed us the adjustment of devices' parameters at post-fabrication stage. As an example, the trimming of a 2×2 directional coupler manifested here in the control of coupling coefficient value over a wide range (0.04-1.5). The process control was such that a target value of 0.5 for the coefficient was accurately attained. The same process enabled us the tuning of the interleaver to the ITU grid within 10pm accuracy.

The sensitivity of Iithographic process window to global planarity of the inter metal dielectric layers is established in this work. The inter metal dielectric layers, between the metal layers, were prepared by utilizing the H2O2/SiH4 chemistry known as the "Advanced Planarity Layer (APL)". Four degrees of global planarity were tested within the APL process window, utilizing different H2O2 stabilization pressures. SEM cross sections were used to determine the degree of planarity in the CMOS product and at lithographic test structures. The lithographic process window and the effect of the stepper leveling system were defined for typical high and low topographies. The results show a strong link between the lithographic process window to degree of global planarity of the APL. Good global planarity enlarged depth of focus and energy latitude, allowing a wider lithographic process window. Also, in cases of improved APL planarity, the stepper leveling system had only a limited contribution to a Iithographic process window. This control over the: global planarity of the inter metal dielectric layers and the wide lithographic process window that results eliminate the need for CMP at 0.5 mu technology.

X-ray based metrology and inspection can be used for various applications: composition analysis, thin-film thickness measurement, and the determination of crystallographic structure and surface roughness. High resolution imaging is also theoretically possible for defects detection and analysis. In this work we focus on x-ray fluorescence (XRF). We discuss its principles, the system requirements, and its applications for x-ray metrology. Such systems can be installed in an in-line or at-line configuration for the monitoring of interconnects systems, both aluminum na copper based. The measurement can be done over special test sites on the chip itself or on the scribe-lanes. Measurement over active devices is also possible but electron-hole creation in the gate and field oxide limits the maximum allowed irradiation per unit are. In this work we discuss the guidelines for critical dose and minimum measured area that allow proper and fast metrology. It is concluded that both high-speed and damage free XRF metrology is possible.

The traveling heater method (THM) is usually characterized by crystal defects such as grain boundaries and dislocations. The need for low cost HgCdTe FPA systems requires high photodiode yield. This demands understanding the crystal defect-diode relationships and necessitates a sorting method that is able to sort the as grown THM wafers before process according to the probability of achieving large photodiode arrays. This paper discusses the influence of crystals defects on photodiode performance and presents a sorting method which is under development. Oriented [111] THM HgCdTe crystals were grown and long wave N+P photodiode arrays were fabricated on the A (metal) face. It is found that individual or clusters of high current diodes which deviate drastically from their neighbors -- in current magnitude and in their slope on a Weibull distribution -- could be explained by a correspondence of excessive leakage and low angle sub-grain boundaries which cross the diode location. The distribution of single and multiple defects is compared to models based on isolated point defects and line defects. Yield implications of these results as a function of array design are described.

A new approach to the fabrication of monolithic infrared focal plane arrays is presented and examined in this paper. The array is based on photovoltaic diodes, parallel integration capacitors, and MIS field effect transistors (FET). The photodiode is connected directly to the integrating capacitor while the MISFET serves as a pass gate to the video line. This configuration is operated in the pseudo-staring mode. The array was implemented in InSb, in a process based on a new passivation in which a photo chemical oxidation of InSb is followed by a conventional photo chemical SiO2 growth. A two-level metallization process was developed serving both for electrical connection and optical coverage. Two configurations were tested for the layout of the two metal layers. In addition, the lower metallization was implemented in Cr, Ti, and Al. The optimal structure is a planar array with Cr as the first metal layer which forms the source and drain contacts.

A monolithic infrared focal plane array where photo-diodes and field effect transistors are integrated is presented. The photodiode is connected directly to the integrating capacitor while the transistor controls the integrated signal-charge transfer to the video line. The operating modes of such array are discussed and especially the pseudo-staring mode. Such arrays were produced and their system performance were investigated. The detectors average specific detectivity D*(lambda )(f/no equals 1, (lambda) equals 3.83 micrometers ) was equal to 1.3 X 1011 [cm-Hz1/2/W] and was used to calculate the Noise Equivalent Temperature Difference (NETD) as a function of the number of detectors and vectors. The NETD was estimated to be of 0.039 K for an optimal 5 vectors array.

A novel interface to InSb based on photochemical native oxide (PNOX), which improves conventional ultraviolet (UV) enhanced deposition, is reported. Prior to the deposition of SiO2, an additional stage of growing a native oxide by exposing the semiconductor to N2O and Hg vapors at low pressure under UV illumination is introduced. Composition and electrical properties of the interface are discussed. Compositional analysis was performed by Auger electron spectroscopy. Electrical properties were characterized using metal-insulator semiconductor (MIS) capacitors and photodiodes implemented with UV enhanced chemical vapor deposition (CVD) oxide/PNOX/InSb. Interface state densities of 2–4×1011 cm−2 eV−1 are obtained with good uniformity and stability. The hysteresis of the MIS structure with 1000 Å photoinduced CVD oxide on PNOX is very small, about 0.32 V for a ±20 V span measured at 77 K.

A novel set-up for horizontal open-tube vapor transport epitaxy of HgCdTe films is described. Mirror-like HgCdTe epitaxial layers with thicknesses up to 40 Μm were grown and characterized. The growth temperature ranged from 380 to 550‡C, with growth rates of the order of 0.5–7 Μm per hour. The concentration depth profiles and the optical and electrical properties of relatively uniform films with x≈0.3–0.4 are reported. The process kinetics are studied. A simple model which takes into account the reactions occurring at the boundaries of the epitaxial layer and the interdiffusion in the epilayer is presented and discussed. The model fits the experimentally observed characteristics of the epitaxial growth process. A constant growth rate leading to a linear dependence of film thickness upon deposition time y–y=k t is derived. The reaction rate constant k is given by k=kea with k=0.18 cm-secand the energy of activation E=1.12 eV.