TaSb_2, a member of the transition metal dipnictide family of materials, hosts the very rare dual topological phase - weak topological insulating state and topological crystalline insulating state along different crystallographic orientations. So far, studies on the electronic structure of transition metal dipnictides have focused on their overall electronic structure and the bulk open-orbit Fermi surfaces. Using angle-resolved photoemission spectroscopy, density functional theory calculations, and transport measurements, we distinguish the intertwined bulk and surface states on the weakly topological (201̅) plane of TaSb_2. We identify multiple electron- and hole-like bulk bands, yielding a near-perfect carrier compensation. Crucially, we observe open-orbit FSs parallel to L̅-Y̅ direction that are entirely of surface origin. Circular-dichroism ARPES reveals k → -k spectral reversal, indicating spin-momentum locking and the topological nature of these surface states. Consistent with this, magnetotransport measurements display weak antilocalization, establishing TaSb_2 as a platform for spin-polarized topological transport on a weakly topological surface.

Layered two-dimensional (2D) materials, with their atomic-scale thickness and tunable electronic, optical, and mechanical properties, open many promising pathways to significantly advance modern electronics. The field effect caused by a strong electric field, typically of MV/cm level, applied perpendicular to the material layers, is a highly effective method for controlling these properties. Field effect allows the regulation of the electron flow in transistor channels, improves the photodetector efficiency and spectral range, and facilitates the exploration of novel exotic quantum phenomena in 2D materials. However, existing approaches to induce the field effect in 2D materials utilize circuit-based electrical gating methods fundamentally limited to microwave response rates. Device-compatible ultrafast, sub-picosecond control needed for modern technology and basic science applications still remains a challenge. In this study, we demonstrate such an ultrafast field effect in atomically thin MoS2, an archetypal 2D semiconductor, embedded in a hybrid 3D-2D terahertz nanoantenna structure. This nanoantenna efficiently converts an incident terahertz electric field into the vertical ultrafast gating field in MoS2 while simultaneously enhancing it to the required MV/cm level. We observe the terahertz field effect optically as coherent terahertz-induced Stark shift of characteristic exciton resonances in MoS2. Our results enable novel developments in technology and the fundamental science of 2D materials, where the terahertz field effect is crucial.

Emerging magnetic fields related to the presence of topologically protected spin textures such as skyrmions are expected to give rise to additional, topology-related contributions to the Hall effect. In order to doubtlessly identify this so-called topological Hall effect, it is crucial to disentangle such contributions from the anomalous Hall effect. This necessitates a direct correlation of the transversal Hall voltage with the underlying magnetic textures. A novel measurement platform is developed that allows to acquire high-resolution Lorentz transmission electron microscopy images of magnetic textures as a function of an external magnetic field and to concurrently measure the (anomalous) Hall voltage in-situ in the microscope on one and the same specimen. This approach is used to investigate the transport signatures of the chiral soliton lattice and antiskyrmions in Mn1.4PtSn. Notably, the observed textures allow to fully understand the measured Hall voltage without the need of any additional contributions due to a topological Hall effect, and the field-controlled formation and annihilation of anstiskyrmions are found to have no effect on the measured Hall voltage.

Layered two-dimensional (2D) materials offer many promising avenues for advancing modern electronics, thanks to their tunable optical, electronic, and magnetic properties. Applying a strong electric field perpendicular to the layers, typically at the MV/cm level, is a highly effective way to control these properties. However, conventional methods to induce such fields employ electric circuit - based gating techniques, which are restricted to microwave response rates and face challenges in achieving device-compatible ultrafast, sub-picosecond control. Here, we demonstrate an ultrafast field effect in atomically thin MoS2 embedded within a hybrid 3D-2D terahertz nanoantenna. This nanoantenna transforms an incoming terahertz electric field into a vertical ultrafast gating field in MoS2, simultaneously enhancing it to the MV/cm level. The terahertz field effect is observed as a coherent terahertz-induced Stark shift of exciton resonances in MoS2. Our results offer a promising strategy to tune and operate ultrafast optoelectronic devices based on 2D materials.

Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model system, and then explore relaxation in tau-MnAl films. Compared to magnetotransport experiments based on ac lock-in techniques, we find that the dc current-reversal method is particularly sensitive to relaxation processes which happen on timescales on the order of few to many seconds.

Yttrium iron garnet (YIG) is a prototypical material in spintronics due to its exceptional magnetic properties. To exploit these properties high quality thin films need to be manufactured. Deposition techniques like sputter deposition or pulsed laser deposition at ambient temperature produce amorphous films, which need a post annealing step to induce crystallization. However, not much is known about the exact dynamics of the formation of crystalline YIG out of the amorphous phase. Here, we conduct extensive time and temperature series to study the crystallization behavior of YIG on various substrates and extract the crystallization velocities as well as the activation energies needed to promote crystallization. We find that the type of crystallization as well as the crystallization velocity depend on the lattice mismatch to the substrate. We compare the crystallization parameters found in literature with our results and find an excellent agreement with our model. Our results allow us to determine the time needed for the formation of a fully crystalline film of arbitrary thickness for any temperature.

The altermagnet candidate Mn5Si3 has attracted wide attention in the context of nonrelativistic spin physics, due to its composition of light elements. In this study, we demonstrate a hallmark of altermagnetism in Mn5Si3 thin films, namely the three options, or variants, for the checkerboard distribution of the magnetic Mn atoms. The magnetic symmetries were altered by field-rotation of the N & eacute;el vector along relevant crystal directions, resulting in anomalous Hall effect anisotropy. The experimental results in nanoscale devices were corroborated by a theoretical model involving atomic site dependent anisotropy and bulk Dzyaloshinskii-Moriya interaction for a single variant. These findings elevate Mn5Si3 from a candidate to a proven altermagnet.

Solid phase epitaxy is a crystallization technique used to produce high-quality thin films. Lateral solid phase epitaxy furthermore enables the realization of nonplanar structures, which are interesting, e.g., in the field of spintronics. Here, we demonstrate lateral solid phase epitaxy of yttrium iron garnet over an artificial edge, such that the crystallization direction is perpendicular to the initial seed. We use single-crystalline garnet seed substrates partially covered by a SiOx film to study the lateral crystallization over the SiOx mesa. The yttrium iron garnet layer retains the crystal orientation of the substrate not only when in direct contact with the substrate but also across the edge on top of the SiOx mesa. By controlling the crystallization dynamics it is possible to almost completely suppress the formation of polycrystals and to enable epitaxial growth of single-crystalline yttrium iron garnet on top of mesas made from ceramic materials. From a series of annealing experiments, we extract an activation energy of 3.0eV and a velocity prefactor of 6.5 x 10(14)nm/s for the lateral epitaxial crystallization along the < 100 > direction. Our results pave the way to engineer single-crystalline nonplanar yttrium iron garnet structures with controlled crystal orientation.

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. Altermagnetism is manifested as a three-fold component in the transverse magnetoresistance which arises due to the anomalous Hall effect.

Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rotations, which results in an unconventional spin-polarized band structure in the momentum space. This low symmetry of the crystal structure is expected to be reflected in the anisotropy of the anomalous Hall effect. In this work, we study the anisotropy of the anomalous Hall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidate material. We first demonstrate a change in the relative N\'eel vector orientation when rotating the external field orientation through systematic changes in both the anomalous Hall effect and the anisotropic longitudinal magnetoresistance. We then show that the anomalous Hall effect in this material is anisotropic with the N\'eel vector orientation relative to the crystal structure and that this anisotropy requires high crystal quality and unlikely correlates with the magnetocrystalline anisotropy. Our results provide further systematic support to the case for considering epitaxial thin films of Mn$_5$Si$_3$ as an altermagnetic candidate material.

Phases with spontaneous time-reversal ( T ) symmetry breaking are sought after for their anomalous physical properties, low-dissipation electronic and spin responses, and information-technology applications. Recently predicted altermagnetic phase features an unconventional and attractive combination of a strong T -symmetry breaking in the electronic structure and a zero or only weak-relativistic magnetization. In this work, we experimentally observe the anomalous Hall effect, a prominent representative of the T -symmetry breaking responses, in the absence of an external magnetic field in epitaxial thin-film Mn5Si3 with a vanishingly small net magnetic moment. By symmetry analysis and first-principles calculations we demonstrate that the unconventional d-wave altermagnetic phase is consistent with the experimental structural and magnetic characterization of the Mn5Si3 epilayers, and that the theoretical anomalous Hall conductivity generated by the phase is sizable, in agreement with experiment. An analogy with unconventional d-wave superconductivity suggests that our identification of a candidate of unconventional d-wave altermagnetism points towards a new chapter of research and applications of magnetic phases.

Topology plays a crucial and multifaceted role in solid state physics, leading to a remarkable array of newly investigated materials and phenomena. In this Perspective, we provide a brief summary of well-established model materials with a particular focus on compensated magnets and highlight key phenomena that emerge due to the influence of topology in these systems. The overview covers various magneto-transport phenomena, with a particular focus on the extensively investigated anomalous magneto-transport effects. Furthermore, we look into the significance of topology in understanding elementary magnetic excitations, namely magnons, where the role of topology gained considerable attention from both theoretical and experimental perspectives. Since electrons and magnons carry energy, we explore the implications of topology in combined heat and spin transport experiments in compensated magnetic systems. At the end of each section, we highlight intriguing unanswered questions in this research direction. To finally conclude, we offer our perspective on what could be the next advancements regarding the interaction between compensated magnetism and topology.

We report on advanced in-situ magneto-transport measurements in a transmission electron microscope. The approach allows for concurrent magnetic imaging and high resolution structural and chemical characterization of the same sample. Proof-of-principle in-situ Hall measurements on presumably undemanding nickel thin films supported by micromagnetic simulations reveal that in samples with non-trivial structures and/or compositions, detailed knowledge of the latter is indispensable for a thorough understanding and reliable interpretation of the magneto-transport data. The proposed in-situ approach is thus expected to contribute to a better understanding of the Hall signatures in more complex magnetic textures.

The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results.

PrRhC2 belongs to the rare-earth carbides family whose properties are of special interest among topological semimetals due to the simultaneous breaking of both inversion and time-reversal symmetry. The concomitant absence of both symmetries grants the possibility to tune the Weyl nodes chirality and to enhance topological effects like the chiral anomaly. In this work, we report on the synthesis and compare the magnetotransport measurements of a poly- and single crystalline PrRhC2 sample. Using a remarkable and sophisticated technique, the PrRhC2 single crystal is prepared via focused ion beam cutting from the polycrystalline material. Our magnetometric and specific heat analyses reveal a non-collinear antiferromagnetic state below 20K, as well as short-range magnetic correlations and/or magnetic fluctuations well above the onset of the magnetic transition. The transport measurements on the PrRhC2 single crystal display an electrical resistivity peak at 3K and an anomalous Hall effect below 6K indicative of a net magnetization component in the ordered state. Furthermore, we study the angular variation of magnetoresistivities as a function of the angle between the in-plane magnetic field and the injected electrical current. We find that both the transverse and the longitudinal resistivities exhibit fourfold angular dependencies due to higher-order terms in the resistivity tensor, consistent with the orthorhombic crystal symmetry of PrRhC2. Our experimental results may be interpreted as features of topological Weyl semimetallic behavior in the magnetotransport properties.

The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect.