Three-dimensional flexible solar fabrics based on hydrogenated amorphous silicon (a-Si:H) thin film solar cells were prepared and characterized. A glass fiber fabric with a polytetrafluoroethylene (PTFE) coating proved to be a suitable textile substrate. Interwoven metal wires enable an integrated electrical interconnection. An array of solar cells consisting of an a-Si:H layer stack with a highly p-type/intrinsic/highly n-type doping profile was deposited onto it. Silver was used as the back contact with indium tin oxide (ITO) as the front contact. The best solar cells show an efficiency of 3.9% with an open-circuit voltage of 876 mV and a short-circuit current density of 11.4 mA/cm2. The high series resistance limits the fill factor to 39%. The potential of the textile solar cells is shown by the achieved pseudo fill factor of 79% when neglecting the series resistance, resulting in a pseudo efficiency of 7.6%. With four textile solar cells connected in a series, an open-circuit voltage of about 3 V is achieved.

Double layers of deuterated and hydrogenated amorphous silicon (a‐Si:H) on glass are heated in the ambient by scanning with a green (532 nm) continuous wave laser. The hydrogen diffusion length in the laser spot is obtained from the deuterium (D)–hydrogen (H) interdiffusion measured by secondary ion mass spectrometry (SIMS), the temperature in the laser spot is obtained by calculation. Under certain conditions, detachment of the deuterated layer from the hydrogenated layer is observed in the SIMS depth profiles, visible by rising oxygen and carbon signals at the D/H interface attributed to in‐diffusion of atmospheric gas species like water vapor, oxygen, and carbon oxide. Stacks involving both undoped and boron‐doped a‐Si:H films show disintegration. The results suggest that the parameters leading to the disintegration effects are the presence of a plane of reduced material cohesion at the D/H interface, a sizeable H diffusion length and a rather high heating rate. Herein, it is likely considered that the observed layer disintegration process is involved in the peeling of a‐Si:H films upon fast heating. Furthermore, the results show that rapid laser heating can be used to detect planes of reduced material cohesion which may compromise the electronic properties of a‐Si:H‐based stacks.

Abstract In this contribution, inspired by the excellent resource management and material transport function of leaf veins, the electrical transport function of metallized leaf veins is mimicked from the material transport function of the vein networks. By electroless copper plating on real leaf vein networks with copper thickness of only several hundred nanometre up to several micrometre, certain leaf veins can be converted to transparent conductive electrodes with an ultralow sheet resistance 100 times lower than that of state-of-the-art indium tin oxide thin films, combined with a broadband optical transmission of above 80% in the UV–VIS–IR range. Additionally, the resource efficiency of the vein-like electrode is characterized by the small amount of material needed to build up the networks and the low copper consumption during metallization. In particular, the high current density transport capability of the electrode of > 6000 A cm−2 was demonstrated. These superior properties of the vein-like structures inspire the design of high-performance transparent conductive electrodes without using critical materials and may significantly reduce the Ag consumption down to < 10% of the current level for mass production of solar cells and will contribute greatly to the electrode for high power density concentrator solar cells, high power density Li-ion batteries, and supercapacitors.

Liquid phase crystallized (LPC) silicon thin films on glass substrates are a feasible alternative to conventional crystalline silicon (c‐Si) wafers for solar cells. Due to substrate limitation, a low‐temperature technology is needed for solar cell fabrication. While silicon heterojunction is typically used, herein, the combination of vanadium oxide/c‐Si heterojunction as emitter and base contacts defined by IR laser processing of phosphorus‐doped amorphous silicon carbide stacks is explored. LPC solar cells are fabricated using such technologies to identify their issues and advantages with a promising performance of an active‐area efficiency of 5.6%. Apart from the absence of light‐trapping techniques, the relatively low efficiency obtained is attributed to a low lifetime in the LPC silicon bulk. These poor material properties imply a short diffusion length that makes it that only photogenerated carriers in the emitter regions can be collected. Consequently, future devices should show narrower base contact regions, suggesting a shorter‐wavelength laser, combined with longer LPC substrate lifetimes.

Graphene and its derivatives have many superior electrical, thermal, mechanical, chemical, and structural properties, and promise for many applications. One of the issues for scalable applications is the lack of a simple, reliable method that allows the deposit of a well-ordered monolayer using low-cost graphene flakes onto target substrates with different surface properties. Another issue is the adhesion of the deposited graphene thin film, which has not been well investigated yet. Following our former finding of a double self-assembly (DSA) process for efficient deposition of a monolayer of graphene flakes (MGFs), in this work we demonstrate that the DSA process can be applied even on very challenging samples including highly hydrophobic polytetrafluoroethylene (PTFE), flexible textiles, complex 3D objects, and thin glass fibers. Additionally, we tested adhesion of the graphene flakes on the flat glass substrate by scotch tape peel test of the MGFs. The results show that the graphene flakes adhere quite well on the flat glass substrate and most of the graphene flakes stay on the glass. These findings may trigger many large-scale applications of low-cost graphene feedstocks and other 2D materials.

We describe the preparation and properties of bilayers of graphene- and multi-walled carbon nanotubes (MWCNTs) as an alternative to conventionally used platinum-based counter electrode for dye-sensitized solar cells (DSSC). The counter electrodes were prepared by a simple and easy-to-implement double self-assembly process. The preparation allows for controlling the surface roughness of electrode in a layer-by-layer deposition. Annealing under N2 atmosphere improves the electrode's conductivity and the catalytic activity of graphene and MWCNTs to reduce the I3- species within the electrolyte of the DSSC. The performance of different counter-electrodes is compared for ZnO photoanode-based DSSCs. Bilayer electrodes show higher power conversion efficiencies than monolayer graphene electrodes or monolayer MWCNTs electrodes. The bilayer graphene (bottom)/MWCNTs (top) counter electrode-based DSSC exhibits a maximum power conversion efficiency of 4.1 % exceeding the efficiency of a reference DSSC with a thin film platinum counter electrode (efficiency of 3.4 %). In addition, the double self-assembled counter electrodes are mechanically stable, which enables their recycling for DSSCs fabrication without significant loss of the solar cell performance.

Rapid thermal annealing by, e.g., laser scanning of hydrogenated amorphous silicon (a-Si:H) films is of interest for device improvement and for development of new device structures for solar cell and large area display application. For well controlled annealing of such multilayers, precise knowledge of temperature and/or hydrogen diffusion length in the heated material is required but unavailable so far. In this study, we explore the use of deuterium (D) and hydrogen (H) interdiffusion during laser scanning (employing a continuous wave laser at 532 nm wavelength) to characterize both quantities. The evaluation of temperature from hydrogen diffusion data requires knowledge of the high temperature (T > 500 °C) deuterium-hydrogen (D-H) interdiffusion Arrhenius parameters for which, however, no experimental data exist. Using data based on recent model considerations, we find for laser scanning of single films on glass substrates a broad scale agreement with experimental temperature data obtained by measuring the silicon melting point and with calculated data using a physical model as well as published work. Since D-H interdiffusion measures hydrogen diffusion length and temperature within the silicon films by a memory effect, the method is capable of determining both quantities precisely also in multilayer structures, as is demonstrated for films underneath metal contacts. Several applications are discussed. Employing literature data of laser-induced temperature rise, laser scanning is used to measure the H diffusion coefficient at T > 500 °C in a-Si:H. The model-based high temperature hydrogen diffusion parameters are confirmed with important implications for the understanding of hydrogen diffusion in the amorphous silicon material.

It is demonstrated that systematic and designated control of supramolecular nanostructures via interfacial engineering enables (opto)electronic C 60 ‐material properties to be widely adjusted. Interestingly, the lowest unoccupied molecular orbital (LUMO) energies of the same amphiphilic fullerene species are tuned up to 120 meV using supramolecular assembly, competitive to complete molecular change; cf. PC 61 BM to PC 71 BM causes a change of 200 meV. Morphology control is achieved through different thin‐film production techniques involving molecular assembly at interfaces, including liquid–liquid interfacial precipitation (LLIP), and Langmuir–Blodgett technique at air–water interface. LLIP enables supramolecularly ordered extended surfaces, yielding the least electronically stable LUMO ( E LUMO = −4.28 eV). After qualitatively explaining the observed electrochemical LUMO energy variation for these assemblies with varied molecular packing and aggregate dimensions, an analytical equation is proposed, connecting morphological parameters with LUMO energies with prospects in supramolecular chemistry. To demonstrate the applicability of supramolecular structure–electronic property relations and of supramolecular structure fabrication protocols established in this work to tailor device properties, amorphous‐Si/fullerene hybrid solar cells are built and characterized. It is found that the supramolecular structure variation can be successfully translated to the solar cells, giving rise to a prototype linear relation between LUMO energy and open‐circuit voltage.

In this work, a double self-assembly (DSA) process is demonstrated based on the surface interaction between graphene flakes (GFs) and surfactant molecules at water/air interface, leading to the formation of a stable and dense monolayer of graphene flakes (MGFs) floating on water surface. The thus prepared MGFs can be easily transferred onto various substrates almost independent of their surface wettability. During deposition both the GFs and excess surfactant molecules rearrange themselves in a self-assembled way, so that optimal compression of the MGFs is ensured. Consequently, high performance deposition of MGFs can be easily achieved. The here-reported process combines a fast, reliable, equipment-free large-area (>75 cm(2) in this work) high performance MGFs deposition onto most substrates irrespective to their wettability. Moreover, the DSA process enables an excellent conformal coating of MGFs on 3D structures. Thus, this technology has the potential to pave the way to many large-scale affordable applications of low-cost graphene feedstocks.

Based on well-defined lab conditions, we have developed experimental methods to characterize bifacial laser crystallized multicrystalline silicon (mc-Si) thin film solar cells fabricated on glass. Key parameters which determine the performance of the bifacial solar cells such as light intensity and incidence angle dependence on both sides have been characterized. From these parameters and the local irradiance data, the annual power output of the bifacial solar cells can be simulated easily. In addition, bifacial measurements under well-defined conditions using a single sun simulator have been performed by means of a mirror. The best bifacial mc-Si thin film solar cell shows a “bifacial efficiency” of 12.4% compared to state of the art monofacial mc-Si thin film counterpart of 12.1%. According to our simulation, even a “bifacial efficiency” above 14% is realistic if the solar cell is installed in front of a white diffuse scattering surface with a reflectance of ~90%. A threshold of 24% additional light contribution at which the bifacial mc-Si thin film solar cells outperform the monofacial ones have been determined by simulations. This shows that the advantages of the bifacial cells can already be observed at very low level (<25%) of additional reflected light contribution.

Recently, polycrystalline silicon thin film solar cells on glass are fabricated by a laser induced liquid phase crystallization (LPC) process. This study compares a new economic diode laser, emitting a line focus at 980 nm, with the 808 nm laser normally used concerning its absorption during LPC. We measured the optical constants of amorphous silicon by spectral ellipsometry and UV/VIS spectroscopy. Together with the literature data for crystalline and liquid silicon combined with numerical temperature simulations, we calculated the absorption during LPC and the overall power needed for successful crystallization. Solar cells prepared with both laser types show comparable crystallographic and optoelectronic characteristics. Concerning the economic advantages, the use of such a 980 nm diode laser system would be the choice for the potential industrial production.Polycrystalline silicon thin film solar cells on glass are fabricated by laser‐induced liquid phase crystallization. A new economic diode laser emitting a line focus at 980 nm is compared to the 808 nm laser normally used. Solar cells show comparable crystallographic and optoelectronic characteristics.

Liquid-phase crystallized silicon on glass (LPCSG) presents a promising material to fabricate high quality silicon thin films, e.g., for solar cells and modules. Using continuous wave line focus laser irradiation at 808nm, about 10m thick microcrystalline silicon layers are fabricated by liquid-phase crystallization of amorphous or nanocrystalline silicon layers deposited by electron beam evaporation on Borofloat 33 glass. To achieve high solar cell efficiencies with such thin silicon layers, effective light trapping structures at the silicon surface are needed to enhance the light absorption and thereby the current in the solar cell. At the same time, these surface structures must provide low surface recombination velocity to maintain high open circuit voltage (Voc). Light trapping structures in LPCSG absorber prepared by conventional KOH texturing and by nanowire structuring of the solar cell backside are investigated. The impact of structures on short circuit current density (Isc) is determined from optical measurements. As a new approach, effective carrier lifetime is measured in LPCSG absorbers using the quasi steady-state photoconductance method to determine the impact of structuring on surface recombination and implied Voc of solar cell precursors. Carrier lifetimes in the range of 300-400ns are measured indicating a carrier diffusion length of more than 20m, which is 2-3 times larger than the layer thickness. It is found that a slight pyramidal surface texture by KOH solution provides a high level of light trapping increasing Isc by 17-18% and maintaining high Voc (>600mV). The potential for current enhancement of nanowire structuring is higher (approximate to 20%), but further optimization of nanowire dimensions and of surface cleaning of nanowire structures is needed to overcome higher surface recombination and the resulting Voc losses.

An improved Langmuir-Blodgett self-assembly process combined with Ag-assisted wet chemical etching for the preparation of ordered silicon nanowire arrays is presented in this paper. The new process is independent of the surface conditions (hydrophilic or hydrophobic) of the substrate, allowing for depositing a monolayer of closely packed polystyrene nanospheres onto any flat surface. A full control of the morphology of the silicon nanowire is achieved. Furthermore, it is observed that the formation of porous-Si at the tips of the nanowires is closely related to the release of Ag nanoparticles from the Ag mask during the etching, which subsequently redeposit on the surface initially free of Ag, and these Ag nanoparticles catalyze the etching of the tips and lead to the porous-Si formation. This finding will help to improve the resulting nano- and microstructures to get them free of pores, and renders it a promising technology for low-cost high throughput fabrication of specific optical devices, photonic crystals, sensors, MEMS, and NEMS by substituting the costly BOSCH process. It is shown that ordered nanowire arrays free of porous structures can be produced if all sources of Ag nanoparticles are excluded, and structures with aspect ratio more than 100 can be produced. (C) 2016 Elsevier B.V. All rights reserved.

Liquid-phase crystallized silicon on glass (LPCSG) presents a promising material to fabricate high quality silicon thin films, e.g. for solar cells and modules. Barrier layers and a doped amorphous silicon layer are deposited on the glass substrate followed by crystallization with a line focus laser beam. In this paper we introduce injection level dependent lifetime measurements generated by the quasi steady-state photoconductance decay method (QSSPC) to characterize LPCSG absorbers. This contactless method allows a determination of the LPCSG absorber quality already at an early stage of solar cell fabrication, and provides a monitoring of the absorber quality during the solar cell fabrication steps. We found minority carrier lifetimes higher than 200ns in our layers (e.g. n-type absorber with ND=2x1015cm-3) indicating a surface recombination velocity SBL<3000cm/s at the barrier layer/Si interface.

The cubic polytype of silicon carbide is a stimulating candidate for Micro-Electro-Mechanical-Systems (MEMS) applications due to its interesting physical and chemical properties. Recently, we demonstrated the possibility to elaborate 3C-SiC membranes on 3C-SiC pseudo-substrates, using a silicon epilayer grown by Low Pressure Chemical Vapor Deposition as a sacrificial layer. Such structures could be the starting point for the elaboration of new MEMS devices. However, the roughness still represents a major concern. Therefore, in this contribution, we investigate the influence of an excimer laser irradiation on the Si epilayer surface prior to the 3C-SiC epilayer growth. We compare these results with the 3C-SiC epilayer grown directly on the as-grown Si epilayer.

The room temperature photoluminescence (PL) spectrum due band-to-band recombination in an only 8 μm thick liquid-phase crystallized silicon on glass solar cell absorber is measured over 3 orders of magnitude with a thin 400 μm thick optical fiber directly coupled to the spectrometer. High PL signal is achieved by the possibility to capture the PL spectrum very near to the silicon surface. The spectra measured within microcrystals of the absorber present the same features as spectra of crystalline silicon wafers without showing defect luminescence indicating the high electronic material quality of the liquid-phase multi-crystalline layer after hydrogen plasma treatment.

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiOxNy) or silicon oxide (SiO2) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiOxNy formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiOxNy top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

In this contribution, amorphous silicon thin-film solar cells on textile glass fiber fabrics for smart textiles are prepared and the photovoltaic performance is characterized. These solar cells on fabrics delivered open circuit voltages up to 883 mV. This shows that shunt-free contacting of the solar cells was successful, even in case of non-planar fabrics. The short-circuit current densities up to 3.7 mA/cm(2) are limited by transmission losses in a 10 nm thin titanium layer, which was used as a semi-transparent contact. The low conductivity of this layer limits the fill factor to 43.1%. Pseudo fill factors, neglecting the series resistance, up to 70.2% were measured. Efficiencies up to 1.4% and pseudo efficiencies up to 2.1% were realized on textile fabrics. A transparent conductive oxide could further improve the efficiency to above 5%. (C) 2015 Elsevier B.V. All rights reserved.