Employing amorphous superconductors, such as type-II molybdenum silicide (MoSi), instead of crystalline materials significantly simplifies the material deposition and scalable nanoscale prototyping, beneficial for quantum electronic and photonic device fabrication. In this work, deposition of amorphous superconductive MoSi thin films on flat and nanowire (NW) substrates was demonstrated via pulsed direct-current magnetron co-sputtering from molybdenum and silicon targets in an argon atmosphere. MoSi films were deposited on oxidized silicon wafers and Ga2O3NWs with 6 nm Al2O3insulating shell, grown around the NWs using atomic layer deposition, and studied using scanning and transmission electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Four-point Cr/Au electrical contacts were defined on the thin films and on individual Ga2O3-Al2O3-MoSi core-shell NWs using lithography for low-temperature electrical measurements. By controlling the sputtering power of the targets and thus adjusting the molybdenum-to-silicon ratio in the MoSi films, their properties were optimized to achieve critical temperatureTcof 7.25 K. Such superconducting shell NWs could provide new avenues for fundamental studies and interfacing with other materials for quantum device applications.

This study presents a novel silver nanoparticle ink formulation designed for inkjet printing applications using terpineol as an eco-friendly solvent and butylamine as a stabilizer to ensure stability, high conductivity, and compatibility with inkjet technology. Silver nanoparticles were synthesized using a modified one-pot method in the presence of highly effective stabilizers and surface modifiers such as oleic acid and oleylamine, resulting in uniform particles of less than 10 nm in size, which were then dispersed in a mixture of terpineol and butylamine. The resulting ink demonstrated exceptional stability over 85 days, maintaining optimal rheological properties for inkjet printing. The ink exhibited a perfect jetting performance. We were able to obtain silver conductive patterns reaching 81% of bulk silver conductivity. These results highlight the ink’s promise for scalable, sustainable manufacturing, combining environmental advantages with high-performance functionality.

Achieving uniform and controlled transition metal dichalcogenide (TMD) shell growth on nanowires (NWs) remains a key challenge, limiting the development of high-quality core-shell heterostructures for optoelectronic and photocatalytic applications. In this work, the fabrication of ZnSe-MoSe2 and ZnSe-WSe2 core-shell NWs was successfully demonstrated. ZnSe NWs were grown via the vapour-liquid-solid growth mechanism, while TMD (MoSe2 or WSe2) shells were formed through a two-step process of sacrificial oxide layer deposition via magnetron sputtering followed by selenization process in a chemical vapour transport reactor. As-grown nanostructures were characterized using X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and photoluminescence spectroscopy. It was observed that the TMD shell morphology can be controlled through the selenization process temperature optimization, which arises due to different growth mechanisms discussed here. The studied trends could be further extended to other semiconductor NW and TMD core-shell heterostructure growth, offering promising avenues for advanced nanoscale applications.

Nanowires (NWs) are among the most studied nanostructures as they have numerous promising applications thanks to their various unique properties. Furthermore, the properties of NWs can be tailored during synthesis by introducing structural defects such as nano-twins, periodic polytypes, and kinks, i.e., abrupt changes in their axial direction. Here, this work reports for the first time the postsynthesis formation of such defects, achieved by exploiting a peculiar plasticity that may occur in nanosized covalent materials. Specifically, in this work the authors found that single-crystal CuO NWs can form double kinks when subjected to external mechanical loading. Both the microscopy and atomistic modeling suggest that deformation-induced twinning along the (1¯10)$( {\bar{1}10} )$ plane is the mechanism behind this effect. In a single case the authors are able to unkink a NW back to its initial straight profile, indicating the possibility of reversible plasticity in CuO NWs, which is supported by the atomistic simulations. The phenomenon reported here provides novel insights into the mechanisms of plastic deformation in covalent NWs and offers potential avenues for developing techniques to customize the shape of NWs postsynthesis and introduce new functionalities.

The metastable corundum gallium oxide (α-Ga2O3) features advantageous properties in comparison to the thermodynamically stable monoclinic β-Ga2O3 phase, such as wider bandgap, which is beneficial for a range of applications. However, stabilization of phase-pure α-Ga2O3 thin films is still challenging with conventional deposition methods due to limited understanding of growth factor influence on film formation. In this work we investigated the impact of growth temperature (500-800 °C) and film thickness on α- and β-Ga2O3 phase formation in thin films deposited heteroepitaxially on a-plane sapphire via reactive pulsed direct-current magnetron sputtering. The structure and morphology of the prepared films was studied using X-ray diffraction, scanning and transmission electron microscopy, selected-area electron diffraction and atomic force microscopy. It was determined that the growth of α-Ga2O3 phase is more favourable when the substrate temperature is increased, while polycrystalline β-Ga2O3 forms at lower deposition temperatures. Phase-pure α-Ga2O3 epitaxial films can be obtained up to some critical thickness, when the β-Ga2O3 phase formation starts due to exposed α-phase crystal facets of other than [110] orientation. A-plane sapphire substrates show merit for epitaxial stabilization of thicker single-phase α-Ga2O3 thin films, if the complex parameter space of the selected deposition method is considered.

Transition metal dichalcogenides (TMDs), specifically those involving V and Ti, possess fascinating material properties, making them interesting candidates for scientific studies. The existing growth methods of these materials are typically limited by scalability - either low yield or high cost. Here, we propose an alternative 2-step method valid for scalable production. In the first step, precursor films of Ti / V are deposited using magnetron sputtering, followed by the second step of selenization of these samples using elemental Se in a vacuum-sealed quartz ampoule for conversion to their respective diselenide material. Synthesized films are char-acterised using scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD) and X-ray photoelectron (XPS). The method demonstrated here can be used to increase the active surface area of TiSe2 and VSe2 for their potential catalytic and HER applications using nanostructured substrates, while also providing an opportunity for scalable synthesis of films that can be extended to synthesize other TMDs as well.

The local atomic structure and lattice dynamics of two isostructural layered transition metal dichalcogenides (TMDs), 1T-TiSe2 and 1T-VSe2, were studied using temperature-dependent X-ray absorption spectroscopy at the Ti, V, and Se K-edges. Analysis of the extended X-ray absorption fine structure (EXAFS) spectra, employing reverse Monte Carlo (RMC) simulations, enabled tracking of the temperature evolution of the local environment in the range of 10-300 K. The atomic coordinates derived from the final atomic configurations were used to calculate the partial radial distribution functions (RDFs) and the mean-square relative displacement (MSRD) factors for the first ten coordination shells around the absorbing atoms. Characteristic Einstein frequencies and effective force constants were determined for Ti–Se, Ti–Ti, V–Se, V–V, and Se–Se atom pairs from the temperature dependencies of MSRDs. The obtained results reveal differences in the temperature evolution of lattice dynamics and the strengths of intralayer and interlayer interactions in TiSe2 and VSe2.

This study introduces a novel approach for fabricating ZnS/Al2O3/TaSe2 heterostructured core/shell nanowires (NWs) through the selenization of a metallic Ta thin film precursor. The synthesis process involves a meticulously designed four-step protocol: (1) generating ZnS NWs on an oxidized silicon substrate, (2) encapsulating these NWs with a precisely controlled thin Al2O3 layer via atomic layer deposition (ALD), (3) applying a Ta precursor layer by magnetron sputtering, and (4) annealing in a Se-rich environment in a vacuum-sealed quartz ampoule to transform the Ta layer into TaSe2, resulting in the final core/shell structure. The characterization of the newly produced NWs using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) was validated using the integrity and composition of the heterostructures. Our method not only establishes a new pathway for the synthesis of TaSe2-based core/shell NWs but also extends the potential for creating a variety of core/shell NW systems with chalcogenide shells by adapting the thin film metal precursor approach. This versatility opens the way for future advancements in nanoscale material applications, particularly in electronics and optoelectronics where core/shell geometries are increasingly important.

The metastable corundum gallium oxide (alpha-Ga2O3) features advantageous properties in comparison to the thermodynamically stable monoclinic (3-Ga2O3 phase, such as wider bandgap, which is beneficial for a range of applications. However, stabilization of phase-pure alpha-Ga2O3 thin films is still challenging with conventional deposition methods due to limited understanding of growth factor influence on film formation. In this work we investigated the impact of growth temperature (500-800 degrees C) and film thickness on alpha- and (3-Ga2O3 phase formation in thin films deposited heteroepitaxially on a-plane sapphire via reactive pulsed direct-current magnetron sputtering. The structure and morphology of the prepared films was studied using X-ray diffraction, scanning and transmission electron microscopy, selected-area electron diffraction and atomic force microscopy. It was determined that the growth of alpha-Ga2O3 phase is more favourable when the substrate temperature is increased, while polycrystalline (3-Ga2O3 forms at lower deposition temperatures. Phase-pure alpha-Ga2O3 epitaxial films can be obtained up to some critical thickness, when the (3-Ga2O3 phase formation starts due to exposed alpha-phase crystal facets of other than [110] orientation. A-plane sapphire substrates show merit for epitaxial stabilization of thicker single-phase alpha-Ga2O3 thin films, if the complex parameter space of the selected deposition method is considered.

Due to the recent interest in ultrawide bandgap β-Ga2O3 thin films and nanostructures for various electronics and UV device applications, it is important to understand the mechanical properties of Ga2O3 nanowires (NWs). In this work, we investigated the elastic modulus of individual β-Ga2O3 NWs using two distinct techniques – in-situ scanning electron microscopy resonance and three-point bending in atomic force microscopy. The structural and morphological properties of the synthesised NWs were investigated using X-ray diffraction, transmission and scanning electron microscopies. The resonance tests yielded the mean elastic modulus of 34.5 GPa, while 75.8 GPa mean value was obtained via three-point bending. The measured elastic moduli values indicate the need for finely controllable β-Ga2O3 NW synthesis methods and detailed post-examination of their mechanical properties before considering their application in future nanoscale devices.

The promise of two-dimensional (2D) rhenium diselenide (ReSe2) in electronics and optoelectronics has sparked considerable interest in this material. However, achieving the growth of high-quality ReSe2 thin films on a wafer scale remains a significant challenge. In this study, we adopted a two-step method to produce ReSe2 thin films by combining magnetron sputtering of Re and ReOx onto flat substrates with subsequent selenization via atmospheric pressure chemical vapor transport (CVT). After analyzing the produced films using X-ray diffraction to identify the crystalline phase in formed thin film and scanning electron microscopy (SEM) to examine surface morphology, it was determined that the suitable temperature range for the 15 min selenization process with CVT is 650 °C–750 °C. Further investigation of these optimally produced ReSe2 thin films included atomic force microscopy (AFM), X-ray photoelectron spectroscopy, and Raman spectroscopy. The bulk electrical analysis of these films and AFM and SEM surface morphology revealed a strong reliance on the type of precursor material used for their synthesis, whereas optical measurements indicated a potential for the films in non-linear optics applications, irrespective of the precursor or temperature used. This study not only provides a new pathway for the growth of ReSe2 films but also sheds light on the synthesis approaches of other 2D transition metal dichalcogenide materials.

Nanoparticles in microscopy images are usually analyzed qualitatively or manually and there is a need for autonomous quantitative analysis of these objects. In this paper, we present a physics-based computational model for accurate segmentation and geometrical analysis of one-dimensional deformable overlapping objects from microscopy images. This model, named Nano1D, has four steps of preprocessing, segmentation, separating overlapped objects and geometrical measurements. The model is tested on SEM images of Ag and Au nanowire taken from different microscopes, and thermally fragmented Ag nanowires transformed into nanoparticles with different lengths, diameters, and population densities. It successfully segments and analyzes their geometrical characteristics including lengths and average diameter. The function of the algorithm is not undermined by the size, number, density, orientation and overlapping of objects in images. The main strength of the model is shown to be its ability to segment and analyze overlapping objects successfully with more than 99% accuracy, while current machine learning and computational models suffer from inaccuracy and inability to segment overlapping objects. Benefiting from a graphical user interface, Nano1D can analyze 1D nanoparticles including nanowires, nanotubes, nanorods in addition to other 1D features of microstructures like microcracks, dislocations etc.

Metallic nanowires (NWs) are sensitive to heat treatment and can split into shorter fragments within minutes at temperatures far below the melting point. This process can hinder the functioning of NW-based devices that are subject to relatively mild temperatures. Commonly, heat-induced fragmentation of NWs is attributed to the interplay between heat-enhanced diffusion and Rayleigh instability. In this work, we demonstrated that contact with the substrate plays an important role in the fragmentation process and can strongly affect the outcome of the heat treatment. We deposited silver NWs onto specially patterned silicon wafers so that some NWs were partially suspended over the holes in the substrate. Then, we performed a series of heat-treatment experiments and found that adhered and suspended parts of NWs behave differently under the heat treatment. Moreover, depending on the heat-treatment process, fragmentation in either adhered or suspended parts can dominate. Experiments were supported by finite element method and molecular dynamics simulations.

This study explores a novel approach to surface-enhanced Raman scattering (SERS) substrate fabrication through the heat-induced fragmentation of gold nanowires (Au NWs) and its impact on gold nanoparticle adhesion/static friction using atomic force microscopy manipulations. Controlled heating experiments and scanning electron microscopy measurements reveal significant structural transformations, with NWs transitioning into nanospheres or nanorods in a patterned fashion at elevated temperatures. These morphological changes lead to enhanced Raman signals, particularly demonstrated in the case of Rhodamine B molecules. The results underscore the critical role of NW shape modifications in augmenting the SERS effect, shedding light on a cost-effective and reliable method for producing SERS substrates.

While gallium oxide Ga2O3 has recently shown promise as a new ultra-wide bandgap semiconductor in the form of thin films and nanowires (NWs), its widespread applicability is limited due to lack of native p-type conductivity, thus requiring fabrication of heterojunctions. A potential matching material is spinel zinc gallate ZnGa2O4. In this work we demonstrated and compared two novel approaches of one-dimensional Ga2O3-ZnGa2O4 core- shell NW heterostructure preparation: (a) a direct deposition of a ZnGa2O4 coating using a reactive magnetron co-sputtering; (b) annealing of a sacrificial few-nm-thick ZnO coating, deposited via atomic layer deposition, at high temperature to enable solid state reaction between ZnO and Ga2O3. The as-grown nanostructures were characterized via scanning and transmission electron microscopies, X-ray diffraction and X-ray photoelectron spectroscopy. Room temperature optical features were disclosed using photoluminescence and optical absorption. While both methods are viable for production of the heterostructures, smoother and more uniform ZnGa2O4 coating around Ga2O3 NWs was obtained via sacrificial layer conversion in comparison to the sputter-deposited one. These heterostructures could potentially be used for photocatalysis and nanoscale ultra-wide bandgap electronics.

We characterize the nonlinear optical properties of indium–tin oxide (ITO) quantum dots (QDs) in the IR range using the Z-scan method. We present results of three-photon absorption (3PA), third harmonic generation (3HG), and Kerr-effect-induced nonlinear refraction in ITO QDs. Z-scan measurements were carried out for the QDs solution, while 3HG was demonstrated using QD thin films. The Kerr-induced nonlinear refractive index was analyzed along the 800–950 nm range showing an increase in this parameter from −6.7 × 10−18 to −1.5 × 10−17 m2 W−1. At longer wavelengths (1000–1100 nm), the higher-order effects started to contribute to a nonlinear refractive index. The 3PA coefficient at 950 nm was measured to be 1.42 × 10−25 m3/W2. We discuss the peculiarities in the wavelength-dependent variation of the coefficient of nonlinear absorption responsible for 3PA in the range of 800–1150 nm. Third harmonic generation was analyzed in the 1200–1550 nm spectral range. The absolute value of 3HG conversion efficiency in the 150 nm thick film at the wavelength of laser radiation (1350 nm) was estimated to be ~10–5.

Spray deposition and inkjet printing of various nanostructures are emerging complementary methods for creating conductive coatings on different substrates. In comparison to established deposition techniques like vacuum metal coating and lithography-based metallization processes, spray deposition and inkjet printing benefit from significantly simplified equipment. However, there are number of challenges related to peculiar properties and behaviour of nanostructures that require additional studies. In present work, we investigate electroconductive properties and sintering behaviour of thin films produced from nanostructures of different metals (Ag, Cu and Cu-Ag) and different shapes (nanowires and spherical nanoparticles), and compare them to the reference Ag and Cu magnetron deposited films. Synthesized nanostructures were studied with transmission electron microscopy. Morphology and crystallinity of produced metal films were studied with scanning electron microscopy and X-ray diffraction. The electrical parameters were measured by the van der Pauw method. All nanowires-based films provided high conductivity and required only modest thermal treatment (200 C). To achieve sufficient sintering and conductivity of nanoparticles-based films, higher temperatures are required (300 C for Ag nanoparticles and 350 C for Cu and Cu-Ag nanoparticles). Additionally, stability of nanowires was studied by annealing the samples in vacuum conditions inside a scanning electron microscope at 500 C.

In this critical review, we call attention to a widespread problem related to the vast disagreement in elastic moduli values reported by different authors for nanostructures made of the same material. As a particular example, we focus on ZnO nanowires (NWs), which are among the most intensively studied nanomaterials due to their remarkable physical properties and promising applications. Since ZnO NWs possess piezoelectric effects, many applications involve mechanical deformations. Therefore, there are plenty of works dedicated to the mechanical characterization of ZnO NWs using various experimental and computational techniques. Although the most of works consider exactly the same growth direction and wurtzite crystal structure, reported values of Young’s modulus vary drastically from author to author ranging from 20 to 800 GPa. Moreover, both – diameter dependent and independent – Young’s modulus values have been reported. In this work, we give a critical overview and perform a thorough analysis of the available experimental and theoretical works on the mechanical characterization of ZnO NWs in order to find out the most significant sources of errors and to bring out the most trustable results.

One-dimensional (1D) nanostructures - nanowires (NWs) - exhibit attractive properties for integration in different types of functional devices. Their properties can be enhanced even further or tuned for a specific application by combining different promising materials, such as layered van der Waals materials and conventional semiconductors, into 1D-1D core-shell heterostructures. In this work, we demonstrated growth of GaNMoS2 and GaN-WS2 core-shell NWs via two different methods: (1) two-step process of sputter-deposition of a sacrificial transition metal oxide coating on GaN NWs followed by sulfurization; (2) pulsed laser deposition of few-layer MoS2 or WS2 on GaN NWs from the respective material targets. As-prepared nanostructures were characterized via scanning and transmission electron microscopies, X-ray diffraction, micro-Raman spectroscopy and X-ray photoelectron spectroscopy. High crystalline quality core-shell NW heterostructures with few-layer MoS2 and WS2 shells can be prepared via both routes. The experimental results were supported by theoretical electronic structure calculations, which demonstrated the potential of the synthesised core-shell NW heterostructures as photocatalysts for efficient hydrogen production from water.