Ubiquitous noise sources in quantum systems remain a key obstacle to building quantum computers, necessitating the use of quantum error correction codes. Recently, error-correcting codes tailored for noise-biased systems have been shown to offer high fault-tolerance thresholds and reduced hardware overhead, positioning noise-biased qubits as promising candidates for building universal quantum computers. However, quantum operations on these platforms remain challenging, and their noise structures have not yet been rigorously benchmarked to the same extent as those of conventional quantum hardware. In this work, we develop a comprehensive quantum control toolbox for a scalable noise-biased qubit, detuned Kerr-cat qubit, including initialization, universal single-qubit gates, and quantum nondemolition readout. We systematically characterize the noise structure of these operations using gate set tomography and dihedral randomized benchmarking, achieving high local gate fidelities, with [Formula: see text] and [Formula: see text]. Notably, the noise bias of the detuned Kerr-cat qubit approaches 250 with a phase-flip time of [Formula: see text], which outperforms its resonant-Kerr-cat qubit counterparts as reported previously, representing a state-of-the-art performance benchmark for Kerr-cat qubits. Moreover, our results reveal a critical overestimation of operational noise bias inferred from bit-flip and phase-flip times alone, highlighting the necessity of a precise and direct benchmarking for noise-biased qubit operations. Our work thus establishes a framework for systematically characterizing and validating the performance of quantum operations in structured-noise architectures, which lays the groundwork for implementing efficient quantum error correction in next-generation architectures.

Superinductors have become a crucial component in the superconducting circuit toolbox, playing a key role in the development of more robust qubits. Enhancing the performance of these devices can be achieved by suspending the superinductors from the substrate, thereby reducing stray capacitance. Here, we present a fabrication framework for constructing superconducting circuits with suspended superinductors in planar architectures. To validate the effectiveness of this process, we systematically characterize both resonators and qubits with suspended arrays of Josephson junctions, ultimately confirming the high quality of the superinductive elements. In addition, this process is broadly compatible with other types of superinductors and circuit designs. Our results not only pave the way for scalable superconducting architectures utilizing superinductors but also provide the primitive for future investigation of loss mechanisms associated with the device substrate.

The Kerr-cat qubit is a bosonic qubit in which multiphoton Schr & ouml;dinger cat states are stabilized by applying a two-photon drive to an oscillator with a Kerr nonlinearity. The suppressed bit-flip rate with increasing cat size makes this qubit a promising candidate to implement quantum error correction codes tailored for noise-biased qubits. However, achieving strong light-matter interactions necessary for stabilizing and controlling this qubit has traditionally required strong microwave drives that heat the qubit and degrade its performance. In contrast, increasing the coupling to the drive port removes the need for strong drives at the expense of large Purcell decay. By integrating an effective band-block filter on chip, we overcome this trade-off and realize a Kerr-cat qubit in a scalable 2D superconducting circuit with high coherence. This filter provides 30 dB of isolation at the qubit frequency with negligible attenuation at the frequencies required for stabilization and readout. We experimentally demonstrate quantum nondemolition readout fidelity of 99.6% for a cat with eight photons. Also, to have high-fidelity universal control over this qubit, we combine fast Rabi oscillations with a new demonstration of the X ( pi / 2 ) gate through phase modulation of the stabilization drive. Finally, the lifetime in this architecture is examined as a function of the cat size of up to ten photons in the oscillator, achieving a bit-flip time higher than 1 ms and only a linear increase in the phase-flip rate, in good agreement with the theoretical analysis of the circuit. Our qubit shows promise as a building block for fault-tolerant quantum processors with a small footprint.

Suspending devices on thin SiN membranes can limit their interaction with the bulk substrate and reduce parasitic capacitance to ground. While suspending devices on membranes are used in many fields including radiation detection using superconducting circuits, there has been less investigation into maximum membrane aspect ratios and achievable suspended device quality, metrics important to establish the applicable scope of the technique. Here, we investigate these metrics by fabricating superconducting coplanar waveguide resonators entirely atop thin ( similar to 110 nm) SiN membranes, where the membrane's shortest length to thickness yields an aspect ratio of approximately 7.4x10(3). We compare these membrane resonators to on-substrate resonators on the same chip, finding similar internal quality factors similar to 10(5) at single photon levels. Furthermore, we confirm that these membranes do not adversely affect resonator thermalization and conduct further materials characterization. By achieving high quality superconducting circuit devices fully suspended on thin SiN membranes, our results help expand the technique's scope to potential uses including incorporating higher aspect ratio membranes for device suspension and creating larger footprint, high impedance, and high quality devices.

Correlated errors in superconducting circuits due to nonequilibrium quasiparticles are a notable concern in efforts to achieve fault tolerant quantum computing. The propagation of quasiparticles causing these correlated errors can potentially be mediated by phonons in the substrate. Therefore, methods that decouple devices from the substrate are possible solutions, such as isolating devices atop SiN membranes. In this work, we validate the compatibility of SiN membrane technology with high quality superconducting circuits, adding the technique to the community's fabrication toolbox. We do so by fabricating superconducting coplanar waveguide resonators entirely atop a thin (∼110 nm) SiN layer, where the bulk Si originally supporting it has been etched away, achieving a suspended membrane where the shortest length to its thickness yields an aspect ratio of approximately 7.4 × 10^3. We compare these membrane resonators to on-substrate resonators on the same chip, finding similar internal quality factors ∼10^5 at single photon levels. Furthermore, we confirm that these membranes do not adversely affect the resonator thermalization rate. With these important benchmarks validated, this technique can be extended to qubits.

Reconstructing the Hamiltonian of a quantum system is an essential task for characterizing and certifying quantum processors and simulators. Existing techniques either rely on projective measurements of the system before and after coherent time evolution and do not explicitly reconstruct the full time-dependent Hamiltonian or interrupt evolution for tomography. Here, we experimentally demonstrate that an a priori unknown, time-dependent Hamiltonian can be reconstructed from continuous weak measurements concurrent with coherent time evolution in a system of two superconducting transmons coupled by a flux-tunable coupler. In contrast to previous work, our technique does not require interruptions, which would distort the recovered Hamiltonian. We introduce an algorithm, which recovers the Hamiltonian and density matrix from an incomplete set of continuous measurements, and demonstrate that it reliably extracts amplitudes of a variety of single-qubit and entangling two-qubit Hamiltonians. We further demonstrate how this technique reveals deviations from a theoretical control Hamiltonian, which would otherwise be missed by conventional techniques. Our work opens up novel applications for continuous weak measurements, such as studying nonidealities in gates, certifying analog quantum simulators, and performing quantum metrology.

Ternary quantum information processing in superconducting devices poses a promising alternative to its more popular binary counterpart through larger, more connected computational spaces and proposed advantages in quantum simulation and error correction. Although generally operated as qubits, transmons have readily addressable higher levels, making them natural candidates for operation as quantum three-level systems (qutrits). Recent works in transmon devices have realized high fidelity single qutrit operation. Nonetheless, effectively engineering a high-fidelity two-qutrit entanglement remains a central challenge for realizing qutrit processing in a transmon device. In this work, we apply the differential AC Stark shift to implement a flexible, microwave-activated, and dynamic cross-Kerr entanglement between two fixed-frequency transmon qutrits, expanding on work performed for the $ZZ$ interaction with transmon qubits. We then use this interaction to engineer efficient, high-fidelity qutrit CZ$^†$ and CZ gates, with estimated process fidelities of 97.3(1)% and 95.2(3)% respectively, a significant step forward for operating qutrits on a multi-transmon device.

Hybridization is a very fundamental quantum mechanical phenomenon, with the text book example of binding two hydrogen atoms in a hydrogen molecule. In semiconductor physics, a quantum dot (QD) can be considered as an artificial atom, with two coupled QDs forming a molecular state, and two electrons on a single QD the equivalent of a helium atom. Here we report tunnel spectroscopy experiments illustrating the hybridization of another type of discrete quantum states, namely of superconducting subgap states that form in segments of a semiconducting nanowire in contact with superconducting reservoirs. We show and explain a collection of intermediate states found in the process of merging individual bound states, hybridizing with a central QD and eventually coherently linking the reservoirs. These results may serve as a guide in future Majorana fusion experiments and explain a large variety of recent bound state experiments.

The technological development of hardware heading toward universal fault-tolerant quantum computation requires a large-scale processing unit with high performance. While fluxonium qubits are promising with high coherence and large anharmonicity, their scalability has not been systematically explored. In this work, we propose a superconducting quantum information processor based on compact high-coherence fluxoniums with suppressed crosstalk, reduced design complexity, improved operational efficiency, high-fidelity gates, and resistance to parameter fluctuations. In this architecture, the qubits are readout dispersively using individual resonators connected to a common bus and manipulated via combined on-chip RF and DC control lines, both of which can be designed to have low crosstalk. A multi-path coupling approach enables exchange interactions between the high-coherence computational states and at the same time suppresses the spurious static ZZ rate, leading to fast and high-fidelity entangling gates. We numerically investigate the cross resonance controlled-NOT and the differential AC-Stark controlled-Z operations, revealing low gate error for qubit-qubit detuning bandwidth of up to 1 GHz. Our study on frequency crowding indicates high fabrication yield for quantum processors consisting of over thousands of qubits. In addition, we estimate low resource overhead to suppress logical error rate using the XZZX surface code. These results promise a scalable quantum architecture with high performance for the pursuit of universal quantum computation.

Exploring highly connected networks of qubits is invaluable for implementing various quantum algo-rithms and simulations. All-to-all connectivity allows for entangling qubits with reduced gate depth. On trapped ion quantum processors, the shared motional degree of freedom is routinely used to simultaneously entangle over a dozen qubits with high fidelity in the Molmer-Sorensen gate. Here, we demonstrate the first implementation of a Molmer-Sorensen-like interaction in circuit quantum electrodynamics through assisted by a shared photonic mode and Rabi driven qubits, which relaxes restrictions on qubit frequen-cies during fabrication and supports scalability. We achieve a two-qubit entangled state with maximum state fidelity or 97% in 310 ns and a three-qubit GHZ state with fidelity 90.5% in 217 ns, and a four-qubit GHZ state with 66% fidelity. The four-qubit gate is limited by shared resonator losses and the spread of qubit-resonator couplings, which must be addressed for high fidelity operations. Exploring highly con-nected networks of qubits is invaluable for implementing various quantum algorithms and simulations as it allows for entangling qubits with reduced circuit depth. Here, we demonstrate a multi-qubit STAR (Sideband Tone Assisted Rabi driven) gate. Our scheme is inspired by the ion qubit Molmer-Sorensen gate and is mediated by a shared photonic mode and Rabi-driven superconducting qubits, which relaxes restrictions on qubit frequencies during fabrication and supports scalability. We achieve a two-qubit gate with maximum state fidelity of 95% in 310 ns, a three-qubit gate with state fidelity 90.5% in 217 ns, and a four-qubit gate with state fidelity 66% in 200 ns. Furthermore, we develop a model of the gate that show the four-qubit gate is limited by shared resonator losses and the spread of qubit-resonator couplings, which must be addressed to reach high-fidelity operations.

Long B. Nguyen, 2, ∗ Gerwin Koolstra, 2 Yosep Kim, 2, † Alexis Morvan, 2, ‡ Trevor Chistolini, Shraddha Singh, 4 Konstantin N. Nesterov, Christian Jünger, 2 Larry Chen, Zahra Pedramrazi, 2 Bradley K. Mitchell, 2 John Mark Kreikebaum, 6, ‡ Shruti Puri, 4 David I. Santiago, 2 and Irfan Siddiqi 2, 6 Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Department of Physics, University of California, Berkeley, California 94720, USA Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA Yale Quantum Institute, Yale University, New Haven, Connecticut 06511, USA Bleximo Corp., Berkeley, California 94720, USA Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

As superconducting quantum processors increase in complexity, techniques to overcome constraints on frequency crowding are needed. The recently developed method of laser-annealing provides an effective post-fabrication method to adjust the frequency of superconducting qubits. Here, we present an automated laser-annealing apparatus based on conventional microscopy components and demonstrate preservation of highly coherent transmons. In addition, we perform noise spectroscopy to investigate the change in defect features, in particular, two-level system defects, after laser-annealing. Finally, we present a local heating model as well as demonstrate aging stability for laser-annealing on the wafer scale. Our work constitutes an important step toward both understanding the underlying physical mechanism and scaling up laser-annealing of superconducting qubits.

The development of noisy intermediate-scale quantum devices has extended the scope of executable quantum circuits with high-fidelity single- and two-qubit gates. Equipping these devices with three-qubit gates will enable the realization of more complex quantum algorithms and efficient quantum error correction protocols with reduced circuit depth. Several three-qubit gates have been implemented for superconducting qubits, but their use in gate synthesis has been limited owing to their low fidelity. Here, using fixed-frequency superconducting qubits, we demonstrate a high-fidelity iToffoli gate based on two-qubit interactions, the so-called cross-resonance effect. As with the Toffoli gate, this three-qubit gate can be used to perform universal quantum computation. The iToffoli gate is implemented by simultaneously applying microwave pulses to a linear chain of three qubits, revealing a process fidelity as high as 98.26(2)%. Moreover, we numerically show that our gate scheme can produce additional three-qubit gates that provide more efficient gate synthesis than the Toffoli and iToffoli gates. Our work not only brings a high-fidelity iToffoli gate to current superconducting quantum processors but also opens a pathway for developing multi-qubit gates based on two-qubit interactions. The efficiency of running quantum algorithms can be improved by expanding the hardware operations that a quantum computer can perform. A high-fidelity three-qubit iToffoli gate has now been demonstrated using superconducting qubits.

In quantum dot (QD) electron transport experiments additional features can appear in the differential conductance $dI/dV$ that do not originate from discrete states in the QD, but rather from a modulation of the density-of-states (DOS) in the leads. These features are particularly pronounced when the leads are strongly confined low dimensional systems, such as in a nanowire (NW) where transport is one-dimensional and quasi-zero dimensional lead-states can emerge. In this paper we study such lead-states in InAs NWs. We use a QD integrated directly into the NW during the epitaxial growth as an energetically and spatially well-defined tunnel probe to perform $dI/dV$ spectroscopy of discrete bound states in the `left' and `right' NW lead segments. By tuning a sidegate in close proximity of one lead segment, we can distinguish transport features related to the modulation in the lead DOS and to excited states in the QD. We implement a non-interacting capacitance model and derive expressions for the slopes of QD and lead resonances that appear in two-dimensional plots of $dI/dV$ as a function of source-drain bias and gate voltage in terms of the different lever arms determined by the capacitive couplings. We discuss how the interplay between the lever arms affect the slopes. We verify our model by numerically calculating the $dI/dV$ using a resonant tunneling model with three non-interacting quantum dots in series. Finally, we used the model to describe the measured $dI/dV$ spectra and extract quantitatively the tunnel couplings of the lead segments. Our results constitute an important step towards a quantitative understanding of normal and superconducting subgap states in hybrid NW devices.

Subgap states in semiconducting-superconducting nanowire hybrid devices are controversially discussed as potential topologically nontrivial quantum states. One source of ambiguity is the lack of an energetically and spatially well defined tunnel spectrometer. Here, we use quantum dots directly integrated into the nanowire during the growth process to perform tunnel spectroscopy of discrete subgap states in a long nanowire segment. In addition to subgap states with a standard magnetic field dependence, we find topologically trivial subgap states that are independent of the external magnetic field, i.e., that are pinned to a constant energy as a function of field. We explain this effect qualitatively and quantitatively by taking into account the strong spin-orbit interaction in the nanowire, which can lead to a decoupling of Andreev bound states from the field due to a spatial spin texture of the confined eigenstates. This result constitutes an important step forward in the research on superconducting subgap states in nanowires, such as Majorana bound states.

We present a comprehensive electrical characterization of an InAs/InP nanowire (NW) heterostructure, comprising of two InP barriers forming a quantum dot (QD), two adjacent lead segments and two metallic contacts. We demonstrate how to extract valuable quantitative information of the QD. The QD shows very regular Coulomb blockade resonances over a large gate voltage range. By analyzing the resonance line shapes, we map the evolution of the tunnel couplings from the few to the many electron regime, with electrically tunable tunnel couplings from <1 μeV to >600 μeV, and a transition from the temperature to the lifetime broadened regime. The InP segments form tunnel barriers with almost fully symmetric tunnel couplings and a barrier height of ∼350 meV. All of these findings can be understood in great detail based on the deterministic material composition and geometry. Our results demonstrate that integrated InAs/InP QDs provide a promising platform for electron tunneling spectroscopy in InAs NWs, which can readily be contacted by a variety of superconducting materials to investigate subgap states in proximitized NW regions, or be used to characterize thermoelectric nanoscale devices in the quantum regime.

The superconducting proximity effect has recently attracted a renewed interest as the basis of topologically nontrivial states in materials with a large spin–orbit interaction, with protected boundary states useful for quantum information technologies. However, spectroscopy of these states is challenging because of the limited control of conventional tunnel barriers. Here we report electronic spectroscopy measurements of the proximity gap in a semiconducting indium arsenide nanowire segment coupled to a superconductor, using quantum dots formed deterministically during the crystal growth. We extract characteristic parameters describing the proximity gap, which is suppressed for lower electron densities and fully developed for larger ones. This gate-tunable transition of the proximity effect can be understood as a transition from the long to the short junction regime of subgap bound states in the NW segment. Our device architecture opens up the way to systematic, quantitative spectroscopy studies of subgap states, such as Majorana-bound states.

Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is challenging due to the conductivity mismatch problem. Spin pumping driven by ferromagnetic resonance is a neat way to circumvent this problem as it produces a pure spin current in the absence of a charge current. Here, we show spin pumping into single layer graphene in micron scale devices. A broadband on-chip RF current line is used to bring micron scale permalloy (Ni$_{80}$Fe$_{20}$) pads to ferromagnetic resonance with a magnetic field tunable resonance condition. At resonance, a spin current is emitted into graphene, which is detected by the inverse spin hall voltage in a close-by platinum electrode. Clear spin current signals are detected down to a power of a few milliwatts over a frequency range of 2 GHz to 8 GHz. This compact device scheme paves the way for more complex device structures and allows the investigation of novel materials.

We report on the fabrication and electrical characterization of an InAs double-nanowire (NW) device consisting of two closely placed parallel NWs coupled to a common superconducting electrode on one side and individual normal metal leads on the other. In this new type of device we detect Cooper-pair splitting (CPS) with a sizeable efficiency of correlated currents in both NWs. In contrast to earlier experiments, where CPS was realized in a single NW, demonstrating an intrawire electron pairing mediated by the superconductor (SC), our experiment demonstrates an interwire interaction mediated by the common SC. The latter is the key for the realization of zero-magnetic field Majorana bound states, or Parafermions; in NWs and therefore constitutes a milestone towards topological superconductivity. In addition, we observe transport resonances that occur only in the superconducting state, which we tentatively attribute to Andreev bound states and/or Yu-Shiba resonances that form in the proximitized section of one NW.

Using angle-resolved photoelectron spectroscopy we investigate the surface electronic structure of the three-dimensional topological insulator (TI) Sb2Te3(0001). Our data show the presence of a topological surface state in the bulk energy gap with the Dirac point located above the Fermi level. The adsorption of Cs atoms on Sb2Te3(0001) gives rise to a downward energy shift of the electronic valence band states which saturates at a value of similar to 200 meV. For the saturation coverage the Dirac point of the linearly dispersive surface state resides in close proximity to the Fermi level. The electronic structure of the Cs/Sb2Te3 interface therefore considerably deviates from previously studied metal-TI interfaces based on the isostructural compound Bi2Se3 which points to the importance of atomic composition in these hetero systems.