To address the public health challenge posed by skin cancer, there is an urgent necessity to devise bendable and wearable ultraviolet (UV) photodetectors capable of monitoring the carcinogenic UV in everyday life on a real-time basis and with individualized coverage. This paper proposes a new plasmonic enhancement scheme using platinum nanoparticles (PtNPs) decorated on one-dimensional (1D) CsCu2I3 single-crystals (SCs) to give high-performance and highly stable UV photodetection. Surface-coated PtNPs provide a plasmonic response with a maximum at 341 nm, which essentially coincides with the absorption edge of CsCu2I3. This alignment contributes to a considerable increase in the light harvesting and carrier generation/separation efficiency. The optimized PtNPs@CsCu2I3 photodetector is characterized by outstanding performance under 340 nm illumination at 5 V bias, achieving a responsivity of 26.32 A W-1, a specific detectivity of 5.97 x 1013 Jones, and ultrafast sub-millisecond response times (510 mu s rise/619 mu s decay). Moreover, the detector is very environmentally stable, and the performance of the detector remains at more than 95% of the original after 90 days ambient air storage in the absence of encapsulation. In a practical demonstration for sunscreen UV-blocking assessment, the device shows high linearity (R2 = 0.99) and reliable accuracy for the different sunscreens with varying strength factors. This contribution does more than merely offer an efficient pathway to achieving high-performance copper-based perovskite photodetectors, it also suggests their possible applications in the real-world, which may be wearable health-commerce tags, environmental sensors, and optical communication structures.

Miniaturized microlasers with high monochromaticity and excellent beam quality are crucial for advanced photonic applications. However, achieving robust, single-mode operation independent of cavity size and specific resonant mode (e.g., whispering gallery modes (WGM) or Fabry-P & eacute;rot (F-P) modes) in standalone cavities remains a significant challenge. This work presents a facile strategy to realize stable, cavity-size-independent single-mode lasing in Ga-doped ZnO microwires (ZnO:Ga MWs) through the controlled incorporation of platinum nanoparticles (PtNPs). The lasing behavior of individual ZnO:Ga MWs can be systematically modulated from multimode to high-quality single-mode by controlling the diameter of PtNPs. This modulation stems from the precise spectral alignment between the PtNPs plasmonic resonance and the ZnO:Ga gain spectrum, which enables modal gain landscape reshaping via enhanced optical confinement and facilitates the hot-carrier cooling process. Crucially, the strategy enables robust single-mode lasing in ZnO:Ga MWs across varying dimensions and cavity configurations, accompanied by high quality factor (Q) and suppressed lasing thresholds. The demonstrated intrinsic scalability and performance metrics establish a critical pathway toward compact, high-efficiency electrically pumped lasers, positioning this architecture as a cornerstone technology for on-chip integrated photonic systems.

ABSTRACT Ultraviolet photodetectors capable of spectral selectivity, self‐powered operation, and polarization sensitivity are vital for next‐generation secure communication and sensing, yet their progress is hampered by material instability, interfacial losses, and the difficulty of multifunctional integration. Here, we report a groundbreaking CsAg 2 I 3 /GaN van der Waals (vdWs) heterojunction that uniquely integrates in‐plane structural anisotropy, pronounced pyro‐phototronic effect, and atomically sharp interface engineering. The CsAg 2 I 3 single‐crystals, synthesized via chemical vapor deposition, exhibit a wide‐bandgap (∼3.38 eV), strong second‐order nonlinear response, and remarkable pyroelectricity, overcoming the stability and symmetry limitations of conventional perovskites and inorganic wide‐bandgap semiconductors. The CsAg 2 I 3 /GaN device delivers record‐breaking performance: an ultralow dark current of 0.3 pA, high responsivity of 0.28 A/W, specific detectivity of 1.7 × 10 12 Jones, and ultrafast response speeds of 16/21 µs, outperforming most state‐of‐the‐art perovskites and wide‐bandgap photodetectors. Crucially, the pyro‐phototronic effect amplifies polarization sensitivity, achieving an unprecedented dichroic ratio of 10.5 under bias, the highest reported for all‐inorganic perovskite systems and other competitors. The device also demonstrates exceptional operational stability and robust performance in an information‐splitting encryption system, validating its real‐world applicability. This work establishes a new paradigm for synergizing pyro‐phototronics and structural anisotropy in heterostructures, enabling a versatile platform for high‐performance, self‐powered, polarization‐sensitive optoelectronics.

Abstract Conventional neuromorphic vision systems suffer from architectural fragmentation, wherein sensing, memory, and processing are distributed across discrete modules, causing high latency, energy waste, and poor dynamic adaptability. Here, we present a wavelength-driven trimodal field-effect phototransistor (TriM-FEP) based on layered HfS2, which offers a new solution to this challenge. This single device integrates polarity-switchable photoresponses and synaptic dynamics without external bias or complex circuitry. By simply tuning the incident wavelength, the TriM-FEP delivers three distinct, dynamically switchable photoresponses: a synaptic-like photoresponse under solar-blind ultraviolet, fast negative photocurrent in the visible, and fast positive photocurrent in the near-infrared. Notably, this unique polarity reversal and speed variation are dominated by the photogating effect and the bolometric effect at different wavelengths, respectively. Beyond fundamental physics, the TriM-FEP enables real-time multichannel encrypted optical communication and in-sensor image preprocessing, eliminating the need for separate computing units. This work transcends the limitations of multicomponent cooperation, establishing a compact, energy-efficient platform that unifies sensing, memory, and processing at the device level.

The on-demand patterning of two-dimensional transition metal dichalcogenides (TMDs) with tailored edges are of great importance in their usages in electronic and optoelectronic applications, but remain technically challenging. Herein, we developed a stress-guided anisotropic etching strategy that can produce large-area and well-ordered MoS2 nanostructures (e.g., nano-ribbons and nano-squares) in a template-free fashion. By creating uniaxially cumulative stress followed by selective thermal etching, the MoS2 monolayers were statistically etched into ribbon-like structures, the width of which can be manifested and inversely proportional to the applied stress magnitude. In addition, these newly etched edges are found to be macroscopically straight or serrated ones, but predominantly Mo-zigzag terminated and remarkably enhanced the photoluminescence by a factor of ∼8.0. The priority of two edge category experimentally relies on the angle between the stress direction and the crystallographic orientation of MoS2, also supported by theoretical calculations. We further demonstrate that biaxial stressing MoS2 crystals could generate an array of well-defined nano-squares, thereby providing a scalable and versatile patterning route to engineer 2D materials with tailored functional edges, which hold great potential for future electrocatalytic and optoelectronic applications.

Transparent electromagnetic shielding windows with high optical transmittance and strong electromagnetic interference (EMI) suppression are essential for modern electronics. Herein, cavity-based silver nanowire (AgNW)-coated glass was developed to enhance EMI shielding while maintaining high transparency. AgNWs were synthesized by a modified polyol method, deposited onto glass substrates by electrostatic spray coating, and assembled face-to-face with controlled spacers to form cavity-type structures. By varying the air-layer thickness from 1 to 10 mm, the cavity configuration achieved more than twofold SE enhancement compared with single-layer AgNW glass at comparable optical transmittance, with maximum SE obtained at 7-8 mm. Across 8-12 GHz, cavity-based glasses exhibited average SE above 45 dB and SE exceeding 50 dB in specific frequency regions. At 10 GHz, the optimized sample achieved maximum SE of 56 dB while maintaining optical transmittance of 81%. Simulations indicate that cavity-induced field interference enhances electromagnetic energy dissipation by increasing SEA relative to SER. This AgNW cavity strategy provides a scalable route to high-performance transparent EMI-shielding glass.

ABSTRACT Given its potential to enhance solar energy conversion efficiency, the bulk photovoltaic effect (BPVE) has attracted considerable attention. Transition metal dichalcogenides (TMDs) have been thriving in the field of BPVE in recent years due to their inversion‐symmetry breaking. However, as a typical narrow‐bandgap semiconductor, TMDs are mainly excited by visible to near‐infrared wavelengths, while the BPVE in the short‐wavelength region has not been investigated. Here, we prepared monoclinic GeSe 2 layered crystals via chemical vapor transport deposition, and systematically studied their in‐plane anisotropic properties. Notably, a significant spontaneous photocurrent was observed in exfoliated GeSe 2 flakes under short‐wave excitation. Comparative studies confirm that the observed BPVE is attributed to ∼0.1% in‐plane tensile strain in GeSe 2 nanosheets. To clarify the intrinsic nature of BPVE in GeSe 2 , we calculated the nonlinear conductivity approximately based on the direction dependence of the photocurrent response to linearly polarized light. The results show excellent agreement with those from the shift current model, demonstrating that an appropriate level of strain can induce the intrinsic BPVE in GeSe 2 . This study fills a gap in the investigation of the short‐wavelength BPVE in layered materials, and reveals the potential of strain engineering to enhance photovoltaic performance.

Electrically pumped micron/sub-micron lasers, featuring compact size, high quality (Q)-factor, ultralow threshold, stable output power, and distinct modes, are promising for optical interconnects, data communications, biosensing, structured-light-based facial recognition, and augmented reality glasses. However, the implementation of these lasers encounters considerable challenges due to the lack of exceptional optical gain materials to achieve population inversion at low injection currents. Herein, an Indium-doping approach is newly employed to improve the optoelectronic properties of ZnO microwires. Joint experiment-theory characterizations reveal that the resulting samples possess high crystal quality, droop-free luminescence, satisfactory thermal stability, high carrier concentration and mobility properties. On this basis, we successfully report a low-threshold (11.8 mA) electrically driven ultraviolet Fabry-P & eacute;rot (F-P) microlaser diode with distinguishable multimodes, integrating a single ZnO:In microwire as the gain medium. The laser produces an impressive output power of 0.56 mW at a high current density of 2.02x10(4) A/cm(2), which is attributed to the saturation of nonradiative Auger recombination processes. Moreover, it exhibits fascinating characteristics, including a high Q-factor (similar to 2173), effective suppression of spontaneous emission, robust operational stability and reliability. The microlaser excels amongst its competitors, advancing toward the practical applications that operate under high current injection levels. Our research offers a feasible approach for developing advanced electrical pumping lasers, wherein the device performance is no longer compromised by the scarcity of high-quality gain media.

Precise and controllable laser wavelength modulation over a broad spectral range in nanoscale devices is pivotal for advancing next-generation optoelectronic technologies. Herein, we synthesized high-quality CsPbBr3 nanowires (NWs) via the anti-solvent method and constructed a CsPbBr3/SiO2/Ag hybrid structure, demonstrating both photonic and plasmonic mode lasing. Finite element simulations were employed to compare the electric field distributions of these two modes. Subsequently, the hybrid cavity of CsPbClxBr3-x/SiO2/Ag was constructed through vapor-phase anion exchange, achieving precise wavelength-tunable, high-quality, and low-threshold surface plasmonic lasing across the 458-538 nm range. Additionally, time-resolved photoluminescence (TRPL) spectroscopy was utilized to investigate exciton recombination dynamics at different junctions, elemental compositions, and laser emission mechanisms. These findings offer valuable insights and practical strategies for designing compact, high-performance tunable nanophotonic devices. (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)CsPbBr3(sic)(sic)(sic), (sic)(sic)(sic)(sic) CsPbBr3/SiO2/Ag(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)CsPbClxBr3-x/SiO2/Ag(sic)(sic)(sic), (sic)458 similar to 538 nm(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic),(sic)(sic)(sic),(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic), (sic)(sic)(sic)(sic)(sic)(sic)(sic),(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic)(sic).

Solar-blind ultraviolet polarization detection is crucial for emerging photonic technologies, yet integrating solar-blind selectivity, ultrahigh polarization sensitivity, and self-powering operation in low-dimensional wide bandgap semiconductors remains challenging. Herein, we exhibit a highly polarization-sensitive, solar-blind selective and self-powered photodetector based on a one-dimensional Ga2O3 single-crystals Van der Waals heterojunction (vdWh), in which Ga2O3 single-crystals exhibit significant in-plane anisotropy with high electrical and optoelectrical anisotropies. Benefiting from interface engineering and a graphene transparent electrode, the detector exhibits superior performance with a responsivity of 0.20 A/W, a detectivity of 2.95×1011 Jones, fast response times of 26.5/25.7 μs (rise/decay), and a record polarization sensitivity of 122 at 0 V. Critically, the detector exhibits a remarkable superlinear photoresponse, maintaining excellent performance under strong illumination, which is determined by space-charge trapping effect. Further, a photonic system combining a 10×10 photodetector array with polarization-resolved inputs achieves >88% trimodal classification accuracy and delivers 7 dB image enhancement under extreme noise, demonstrating critical advantages for intelligent vision in low-visibility environments. Beyond establishing a robust framework for advancing compact polarization photodetectors, this research facilitates the development of next-generation ultraviolet optoelectronics devices with novel functionalities specifically designed for harsh environments.

ABSTRACT The monolithic integration of ultraviolet (UV) and near‐infrared (NIR) photodetection in a single device is fundamentally constrained by the inherent spectral crosstalk and architectural complexity of traditional heterostructures. Herein, we circumvent these limitations by introducing a paradigm‐shifting halide‐assisted defect‐compensation strategy that induces a semimetallic‐to‐semiconducting transition in topological 1T’‐MoTe 2 , opening a tunable bandgap while preserving its intrinsically high carrier mobility. This material transformation enables a monolithic I‐1T’‐MoTe 2 /GaN van der Waals heterojunction that achieves two mechanistically distinct, zero‐bias photodetection pathways within a single interface: a Schottky‐junction‐mediated UV response and a band‐engineered NIR absorption. The device delivers exceptional performance, including responsivities of 268 mA/W (350 nm) and 258 mA/W (750 nm), detectivities exceeding 10 11 Jones, and microsecond‐scale response speeds. Crucially, it overcomes the persistent trade‐off between high sensitivity and polarization discrimination, yielding a record polarization ratio of 8.55 in the NIR regime. We further validate its practical utility through robust demonstrations in encrypted optical communication and filter‐free multispectral imaging, underscoring its resilience and readiness for real‐world deployment. By establishing a material‐intrinsic route to programmable band‐structure engineering in topological systems, this work lays a transformative foundation for intelligent, polarization‐resolved photonic platforms and next‐generation secure sensing technologies.

P-type semiconductor materials suffer from bottlenecks such as low hole mobility, insufficient stability, and high interface defect density, which severely weaken device performance and reliability. Herein, we developed a vapor-phase nucleation strategy enabling high-quality, large-area single-crystalline Te films featuring large grains and dominant (100) orientation via precise kinetics control. These films demonstrate, to our knowledge, a record hole mobility of 321 cm2 V-1 s-1, unprecedented among p-type Te films. As a functional validation, an experimentally fabricated Te/SiC heterostructure photodetector exhibits superior rectification and photodetection capabilities containing 108 on/off ratio, 7.68 & times; 1012 Jones detectivity, 59.54 mA/W responsivity, and ultrafast 12/15 mu s response under 360 nm illumination at 0 V bias. Crucially, the detector enables high-speed, stable underwater optical communication in harsh aqueous environments, resolving the longstanding responsivity-band width trade-off that constrains conventional systems. The exceptional Te/SiC detector performance originates from the synergistic effect of well-ordered textured growth in the Te film and surface self-oxidation, which substantially enhances charge transport kinetics at the device interface. Our vapor-phase strategy shatters the mobility-stability-scalability trilemma, unlocking scalable production of Te-based p-type materials for next-generation ultra-stable, high-speed optoelectronics. (c) 2026 Chinese Laser Press

With increasing attention to traffic safety and energy efficiency, traditional windshield defogging methods face problems of high energy consumption, low efficiency and line-of-sight occlusion. In this study, a new defogging scheme based on a silver nanowires (Ag NWs) laminated glass is proposed, which uses the electrothermal characteristics of Ag NWs to achieve efficient defogging by heating the glass surface, providing a solution with low energy consumption and no air conditioning. We prepared high-quality silver nanowires by the polyol synthesis method and uniformly coated them on a glass substrate by the spraying method. Then, silver nanowires were sandwiched with a polyvinyl butyral (PVB) interlayer by the hot-pressing process to form a laminated glass. By optimizing the hot-pressing conditions (temperature, pressure, and time), a glass with low resistance and good optical properties was obtained. When the glass resistance is 20.4 Omega, the transmittance is 74.82%, and the haze is 6.02%. The electrothermal defogging experiment shows that the temperature of the laminated glass increases by about 45 degrees C within 30 min after applying 12 V, which can effectively remove water mist, and the defogging time is only 4 min. Compared with traditional air conditioning defogging methods, this method has lower energy consumption and a faster response time. In addition, the laminated glass shows good environmental stability in extreme environments, and the resistance change is very small, indicating that it is suitable for extreme environments. This study shows that the silver nanowires laminated glass has excellent electrothermal defogging performance and stability and can provide an efficient and energy-saving alternative for automotive defogging technology. In the future, we will optimize the synthesis process of silver nanowires, explore large-scale production methods, and combine them with intelligent vehicle systems to realize an intelligent adaptive defogging function.

Lead-free ultrawide-bandgap semiconductors are crucial for next-generation optoelectronics, yet achieving materials that concurrently enable polarization-resolved ultraviolet detection and high-energy radiation sensing remains a grand challenge. Here, we report the synthesis of high-quality Rb2AgI3 perovskite single-crystals via a customized chemical vapor deposition method. This material uniquely integrates an ultrawide bandgap (approximate to 4.03 eV), high-Z constituents for efficient X-ray attenuation, and a pronounced anisotropic structure. The resulting photodetector exhibits exceptional dual-functional performance. For ultraviolet-B detection, it achieves a high responsivity (0.29 A/W), ultrafast speed (42.4/54 & micro;s). Critically, the detector exhibits unprecedented wavelength-switchable polarization sensitivity, with a degree of linear polarization (DLP) reversing from -0.68 at 295 nm to 0.72 at 305 nm, a first for all-inorganic perovskites. This phenomenon is harnessed for proof-of-concept demonstrations in dual-wavelength information encoding and image contrast enhancement using a convolutional neural network (Recognition accuracy >97%). Concurrently, the device serves as a high-sensitivity X-ray detector, demonstrating a superior sensitivity of 5.3 & times; 10(4) & micro;C Gy(air)(-1) cm(-2), an ultralow detection limit of 27 nGy(air) s(-1), and exceptional operational stability, validated by high-resolution biological imaging. This work establishes Rb2AgI3 as a versatile, high-stability material platform, fundamentally redefining the frontiers of multifunctional optoelectronics for next-generation high-energy radiation sensing and polarization-resolved optoelectronics

Dynamic modulation of microcavity lasers is crucial for achieving stable single-mode operation with high monochromaticity, compact footprint, and directional emission. However, the emergence of higher-order transverse modes with increasing cavity dimensions has frustrated efforts to scale up cavities while maintaining stable single-mode operation. To date, no suitable physical mechanism has been identified that enables cavity size-independent single-mode lasing. Herein, a breakthrough non-invasive technique is developed for in situ engineering of natural nano-grooves in large-size (20 x 20 mu m) perovskite microplates (MPs) through kinetically controlled vapor-phase epitaxy, achieving unprecedentedly precise mode control for optimal single-mode lasing performance. Critically, these well-defined grooves can alter the lasing resonance modes within the microlasers, enabling the transition from whispering gallery mode (WGM) to Fabry-P & eacute;rot (F-P) mode. The optical anisotropy induced by engineered groove structures also achieves polarized lasing emission with a high degree of polarization approaching 0.65. Additionally, numerical simulations elucidate that the external-cavity-free, high-quality (approximate to 2660), and single-mode F-P lasing behavior under large-size conditions arises from the coupling of multiple cleavage cavities, which is induced by broken grooves in perovskite MPs morphology. This study pioneers a mode-selective modulation approach that enables scalable polarization engineering in large-area single-mode microlasers, fundamentally advancing multifunctional integration in photonics and high-density optoelectronic systems.

ABSTRACT Near‐infrared narrowband photodetection is indispensable for high‐fidelity optical communication and sensing, yet conventional filter‐based architectures suffer from intrinsic drawbacks in integration, stability, and spectral purity. Here, we circumvent these constraints by constructing a filter‐free, self‐powered ultra‐narrowband near‐infrared photodetector based on a van der Waals (vdWs) junction between 2D Sb 2 Se 3 and Au. The vdWs contact effectively suppresses Fermi‐level pinning, approaching the Schottky‐Mott limit and enabling ultralow interface resistance. The device delivers a sharp responsivity peak at 1020 nm with a record‐narrow linewidth of 46 nm, achieving a responsivity of 195.7 mA/W and a specific detectivity of 7.74×10 11 Jones under zero bias. Through controlled thermal annealing, we unveil defect‐engineered spectral shaping that progressively narrows the response from 247 to 46 nm, directly implicating trap states in photoconversion dynamics. Exploiting strong in‐plane anisotropy of Sb 2 Se 3 , the detector exhibits a polarization anisotropy ratio exceeding 16. Beyond characterization, we demonstrate a quaternary polarization‐encoded optical communication system operating reliably in highly turbid water (500 NTU), and achieve 98.2% image recognition accuracy via convolutional neural networks. This work intrinsically integrates narrowband filtering and polarization sensitivity at the device physics level, establishing a transformative paradigm for next‐generation multifunctional photodetectors free of external optical elements.

Ultraviolet photodetectors capable of spectral selectivity, self-powered operation, and polarization sensitivity are vital for next-generation secure communication and sensing, yet their progress is hampered by material instability, interfacial losses, and the difficulty of multifunctional integration. Here, we report a groundbreaking CsAg2I3/GaN van der Waals (vdWs) heterojunction that uniquely integrates in-plane structural anisotropy, pronounced pyro-phototronic effect, and atomically sharp interface engineering. The CsAg2I3 single-crystals, synthesized via chemical vapor deposition, exhibit a wide-bandgap (∼3.38 eV), strong second-order nonlinear response, and remarkable pyroelectricity, overcoming the stability and symmetry limitations of conventional perovskites and inorganic wide-bandgap semiconductors. The CsAg2I3/GaN device delivers record-breaking performance: an ultralow dark current of 0.3 pA, high responsivity of 0.28 A/W, specific detectivity of 1.7  × 1012 Jones, and ultrafast response speeds of 16/21 µs, outperforming most state-of-the-art perovskites and wide-bandgap photodetectors. Crucially, the pyro-phototronic effect amplifies polarization sensitivity, achieving an unprecedented dichroic ratio of 10.5 under bias, the highest reported for all-inorganic perovskite systems and other competitors. The device also demonstrates exceptional operational stability and robust performance in an information-splitting encryption system, validating its real-world applicability. This work establishes a new paradigm for synergizing pyro-phototronics and structural anisotropy in heterostructures, enabling a versatile platform for high-performance, self-powered, polarization-sensitive optoelectronics.

Near-infrared narrowband photodetection is indispensable for high-fidelity optical communication and sensing, yet conventional filter-based architectures suffer from intrinsic drawbacks in integration, stability, and spectral purity. Here, we circumvent these constraints by constructing a filter-free, self-powered ultra-narrowband near-infrared photodetector based on a van der Waals (vdWs) junction between 2D Sb2Se3 and Au. The vdWs contact effectively suppresses Fermi-level pinning, approaching the Schottky-Mott limit and enabling ultralow interface resistance. The device delivers a sharp responsivity peak at 1020 nm with a record-narrow linewidth of 46 nm, achieving a responsivity of 195.7 mA/W and a specific detectivity of 7.74 & times;1011 Jones under zero bias. Through controlled thermal annealing, we unveil defect-engineered spectral shaping that progressively narrows the response from 247 to 46 nm, directly implicating trap states in photoconversion dynamics. Exploiting strong in-plane anisotropy of Sb2Se3, the detector exhibits a polarization anisotropy ratio exceeding 16. Beyond characterization, we demonstrate a quaternary polarization-encoded optical communication system operating reliably in highly turbid water (500 NTU), and achieve 98.2% image recognition accuracy via convolutional neural networks. This work intrinsically integrates narrowband filtering and polarization sensitivity at the device physics level, establishing a transformative paradigm for next-generation multifunctional photodetectors free of external optical elements.

Polarization-sensitive photodetection has long been constrained to low-dimensional materials, where anisotropic absorption provides the necessary discrimination. In three-dimensional bulk crystals, this mechanism fundamentally collapses as the absorption anisotropy fades with increasing dimensionality, leaving a long-standing deadlock for high-performance polarization optoelectronics. Here, we break this deadlock by demonstrating highly polarized photoresponse in large-scale Sb2S3 bulk single crystals grown via a controlled physical vapor deposition method. These crystals exhibit a remarkable photocurrent anisotropy ratio exceeding 6 across multiple wavelengths (405, 520, and 680 nm), outperforming most low-dimensional counterparts. Unexpectedly, we uncover that anisotropic carrier recombination, instead of absorption, serves as the primary driver of this polarized response, as evidenced by polarization-dependent absorption spectra and polarization-dependent time-resolved photoluminescence. This recombination-enabled mechanism persists over an ultra-wide 180 degrees angular sector, enabling robust polarization discrimination regardless of illumination azimuth. As a proof of concept, we integrate the detector into a multi-wavelength, polarization-encoded optical communication system that operates over a wide angular range. Our findings not only establish bulk Sb2S3 as a platform for high-anisotropy photodetection but also introduce anisotropic recombination as a generic strategy to bypass the dimensional constraints of conventional polarization-sensitive photodetectors.