This paper presents a miniaturized 2.5 GHz frequency source based on compensated BAW resonator with its integrated temperature molybdenum sensor assembled on the differential Colpitts oscillator. The presence of silicon dioxide layer having a positive temperature coefficient compared to other layers is used to reduce the resonator's drift. A demonstration oscillator achieves a frequency drift of 40 ppm over a temperature range from -35degC to +85degC. The oscillator's phase noise of -113 dBc/Hz at 10 kHz offset from the carrier is reported at 2.5 GHz.

This paper presents the simulation results of a BAW- based low power oscillator. The oscillator was designed using high-Q solidly mounted bulk acoustic wave resonators (SMR BAW) exhibiting quality factor around 2200. The oscillator is simulated using RF transistors of the CMOS 65 nm process from STMicroelectronics. The oscillator was optimized for low power purpose and consumes 50 muA from a 1.2 V source with phase noise performance of -124 dBc/Hz at 100 KHz offset. The impact of the bias current on phase noise, output voltage and oscillation frequency was also studied.

This paper presents a miniaturized 2.5GHz frequency source based on compensated BAW resonator with its integrated temperature molybdenum sensor assembled on the differential Colpitts oscillator. The presence of silicon dioxide layer having a positive temperature coefficient compared to other layers is used to reduce the resonator's drift. A demonstration oscillator achieves a frequency drift of 40 ppm over a temperature range from -35degC to +85degC. The oscillator's phase noise of -94dBc/Hz at 2 KHz offset from the carrier is reported.