Co-deposited perovskite solar cells simplify the fabrication process, yet excessive aggregation of self-assembled molecules (SAMs) during crystallization leads to poor interfacial adhesion, thereby limiting performance and stability. This study designs an asymmetric SAM (PhBr-4PACz) with steric hindrance to mitigate self-aggregation by suppressing the face-to-face stacking of planar conjugated cores, thereby enriching the presence of co-deposited SAMs at the bottom interface with improved interfacial adhesion and coverage. Its deepened energy level by bromine group and observed p-type doping effect further promotes hole extraction and reduces non-radiative recombination. More importantly, 1-Allyl-3-vinylimidazolium chloride was introduced to seal grain boundaries by in-situ crosslinking to suppress the upward diffusion of SAMs under thermal stress and release residual stress. The optimized inverted devices based on this synergistic strategy achieved a certified power conversion efficiency (PCE) of 27.03% and retained over 96% of their initial efficiency after 2000 hours of continuous illumination at the maximum power point tracking (65 °C, ISOS-L-2). A certified PCE of 24.49% was also achieved for small-area flexible devices, showing the compatibility of this co-deposition process on different substrates.
An active temperature disturbance rejection method was developed to address uncertainties in temperature disturbances and to improve stability for field gas measurements. A symmetric convection heat conduction strategy was used to ensure uniform heating of the multipass cell (MPC). Active disturbance rejection control (ADRC) was adopted to address the nonlinear and uncertain temperature disturbance. The temperature fluctuation is less than 0.01℃ in the stable state during field experiments when controlled at 30℃. The maximum temperature fluctuation during gas sample replacement is less than 0.015 °C. For gas measurement results, CO2 and CH4 concentrations were monitored at 2100-3864 ppmv and 99-104 ppmv, respectively. This temperature control method provides a guarantee for field gas monitoring.
Self-assembled monolayers (SAMs) play an important role in improving the performance of inverted perovskite solar cells. However, loose molecular packing, non-uniform coverage, weak affinity with the solvents of perovskite precursors, and energy-level mismatch cause energy losses at the buried interface. Here we develop a light-stable donor–acceptor interface formed by an asymmetric carbazole-based SAM, namely, BrAs, and N-hydroxyethyl phthalimide (PIE). The single-side electron-withdrawing bromine in BrAs maintains wettability and reduces the valence band offset to 0.09 eV. Additionally, the asymmetric dipole in BrAs reorients the carbazole units and strengthens short-range Coulomb interactions, resulting in close packing and uniform coverage of SAMs for efficient and uniform carrier transport. The donor–acceptor interface also promotes ultrafast energy transfer, which enhances the photostability of BrAs and improves thermal carrier extraction by 19
Intelligent thermal management through self-adaptive optical modulation of smart windows is a key technology for green buildings. Integrating solar cells into electrochromic smart windows can further enhance energy conservation, yet their application is still hindered by the limited initial transmittance. Here, we report a self-powered electrochromic smart window by integrating an electrochromic module into a fully transparent perovskite solar cell with a vertically stacked configuration. The device exhibits an average visible light (VIS) transmittance of 86.8
All-perovskite tandem solar cells (TSCs) demonstrate exceptional potential to overcome the single-junction efficiency limit through enhanced photon harvesting across the solar spectrum and suppressed thermalization effects, achieving theoretical power conversion efficiencies surpassing 44%. Wide-bandgap perovskites solar cells (WBG PSCs) are crucial for tandem photovoltaics, and have witnessed exponential progress during the last decade. However, these devices suffer from severe open-circuit voltage (VOC) deficits, primarily due to interfacial recombination and carrier transport losses. A major contributor to these losses is the uncontrolled formation of insulating two-dimensional (2D) perovskite phases during surface passivation. Here, we introduce 4-hydroxyphenylethyl ammonium iodide (p-OHPEAI) as a multifunctional molecular additive to address this critical trade-off. Unlike conventional phenethyl ammonium iodide (PEAI), which forms the insulating 2D phase and the invert electric field by vertical molecular orientation that impedes charge extraction, the hydroxyl group (-OH) in pOHPEAI enables parallel molecular adsorption on perovskite surfaces via synergistic interactions between amino (-NH3) and -OH groups. This configuration effectively eliminates the formation of insulating 2D perovskite phase, passivates undercoordinated halide and lead vacancies, reducing non-radiative recombination. Additionally, the polarity of p-OHPEAI generates a dipole moment at the perovskite/electron transport layer (ETL) interface, optimizing energy-level alignment and facilitating electron extraction. By incorporating p-OHPEAI into 1.77 eV WBG PSCs, we achieved a remarkable VOC of 1.344 V, corresponding to a minimal voltage deficit of 0.426 V, which is among the lowest reported VOC-deficit values for the inverted WBG PSCs with bandgaps ranging from 1.75 to 1.80 eV. The optimized device delivered a power conversion efficiency (PCE) of 19.24%, demonstrating superior performance compared to conventional PEAI-passivated cells. When integrated into all-perovskite TSCs, this strategy enabled a champion PCE of 28.50% (with a certified efficiency of 28.19%). Furthermore, the devices exhibited excellent operational stability, maintaining over 90% of their initial efficiency after 350 h of continuous illumination, highlighting the robustness of the hydroxyl-driven passivation approach. The introduction of hydroxyl groups in passivation molecules provides a versatile strategy to balance defect suppression and charge transport, bridging the gap between high voltage and efficient carrier extraction.
Halide perovskite materials are novel display materials owing to their excellent optical and electrical properties. In recent years, the performance of perovskite light-emitting diodes (PeLEDs) has improved significantly, with the external quantum efficiency (EQE) approaching 30% for green and red PeLEDs. In sharp contrast, the development of blue PeLEDs lags far behind that of their counterparts in terms of efficiency and stability. This review focuses on recent advancements and the key factors affecting the performance of blue PeLEDs. The component tailoring strategies are meticulously summarized first. Subsequently, the detailed methods to improve the performance of blue PeLEDs with various wavelengths are elucidated. The remaining challenges, including efficiency, stability, and lead toxicity, are discussed. Finally, the fabrication techniques for further applications of blue PeLEDs are delineated.
Metal halide perovskites (MHPs) show tremendous potential for field-effect transistors (FETs), but N-type Pbbased MHP FETs have been hindered by critical challenges, including high defect densities, ion migration, and poor reproducibility. In this work, a simple yet powerful ultrathin TiO2 interlayer strategy is introduced that fundamentally transforms the fabrication of Pb-based MHP FETs. By pre-depositing an ultrathin TiO2 layer before perovskite film deposition, reproducible and operationally stable MAPbI3 FETs with remarkable performance are achieved. Comprehensive characterizations reveal that the TiO2 interlayer enhances precursor wetting, promotes larger and more uniform grain formation, reduces defect density, and effectively suppresses non-radiative recombination and ion migration. The universality of this approach is demonstrated by successfully extending it to 2D Dion-Jacobson phase perovskites, including PDAPbI4 and its derivatives. The fabricated devices exhibit excellent electrical characteristics, including high on/off ratios, low hysteresis, and impressive stability. As a proof of concept, a complementary inverter is constructed using perovskite-only components, showcasing the potential for integrated logic circuits. This work provides a robust fabrication method for high-performance Pb-based perovskite FETs with broad applicability.
This study successfully applies scanning capacitance microscopy (SCM) to organic-inorganic metal halide perovskite materials, providing detailed insights into the microscopic distribution of carrier concentrations and types. We developed and optimized an alumina (Al2O3) insulating layer using atomic layer deposition, with a 5 nm thickness at 398.15 K proving optimal for minimizing defects at the Al2O3/perovskite interface. Further optimizations included selecting an appropriate probe for high-contrast SCM imaging, reducing stray capacitance by scanning at sample edges, and analyzing the effects of light illumination. Our results show that perovskite films with excess PbI2 in the precursor had a more uniform carrier distribution and higher overall carrier concentration. Additionally, we identified distinct p-type and n-type regions in perovskite materials modified with polar molecular additives. This work enables SCM as a robust technique for investigating complex carrier behaviors in perovskite materials.
The development of novel electrodes integrating flexibility, high transparency, and superior electrical conductivity has emerged as a critical research focus in the field of flexible optoelectronics. Herein, we present an innovative polymer–metal–polymer (PMP) composite architecture for flexible transparent conductive electrodes, fabricated through a precisely controlled layer-by-layer deposition process. The optimized PMP electrode demonstrates remarkable optoelectronic performance, exhibiting an average visible light transmittance of 84
Metal halide perovskite materials are highly favored in solar cells owing to their excellent power conversion efficiency, simple preparation process, and low-cost manufacturing. Among the many hole transport materials, inorganic materials are favored because of their remarkable cost effectiveness, chemical stability, and long-term stability. Although NiOx is preferred in inorganic hole transport layer material due to its excellent performance, its high reactivity with the perovskite interface may lead to interface defects and carrier recombination, affecting the long-term stability of the device. To further enhance both the performance and long-term stability of perovskite solar cells, the effect of environmental relative humidity on the performance of NiOx films was discussed in this study. By comparing and analyzing the surface morphology and physical properties of NiOx films prepared under different humidity conditions, we found that relative humidity has a significant effect on the performance of NiOx films and their prepared perovskite solar cells. In particular, NiOx films prepared at 60% relative humidity and fabricated into perovskite solar cells exhibited a significantly higher short-circuit current density (Jsc) and fill factor (FF). These findings provide an important reference for optimizing the preparation process and enhancing the performance of perovskite-based solar devices.
The development of quasi-two-dimensional (quasi-2D) perovskite films with high photoluminescence quantum yield (PL QY) and robust environmental stability remains a critical challenge for advanced optoelectronic applications. Herein, we report an A/B-site synergistic doping strategy by incorporating multivalent Cs+ (A-site) and Cd2+ (B-site) ions into quasi-2D BA(2)MA(n-1)Pb(n)Br(3n+1) films, significantly enhancing their optical quality and structural stability. Notably, the bimetallic ion-doped films achieve a high PL QY of up to 90 % at 490 nm, along with excellent homogeneous phase stability (the phase separation of quasi-2D films emitting at 435 nm and 490 nm is suppressed even after 1 h and 10 h). Moreover, co-doping with multivalent Cs+ and Cd2+ ions induces a significant reduction in both grain size (10-15 nm) and surface roughness (similar to 1 nm), while endowing the quasi-2D films with a high exciton binding energy (>300 meV). The variable temperature PL spectra reveal the band-edge radiative dynamics, which originate from the thermal competition between exciton and trap-mediated recombination. The heat-induced electron-phonon interaction enhances the proportion of trap-mediated recombination, leading to an increase in the average PL lifetime. The A/B-site synergistic engineering provides a novel approach for improving the PL performance and photostability of quasi-2D perovskite films, paving the way toward high-performance light-emitting diodes, lasers, and other ptoelectronic devices based on the luminescent layer.
Effective detection of natural gas leakage is critically important from economic, environmental, and safety perspectives. In this study, we designed and implemented a combustible gas leakage imaging system and application platform based on mid-infrared absorption spectroscopy. A lightweight semantic segmentation model incorporating Ghost Bottleneck structures and multi-scale feature fusion strategies was developed to enhance the accuracy and real-time performance of gas leak detection. The system generates outputs including pseudocolor visualizations of leakage areas and text-based alarm notifications, enabling pixel-level localization and early warnings of combustible gas leaks. Additionally, a graphical user interface (GUI) was developed, integrating various functionalities to deliver a comprehensive hardware-software integrated solution. Experimental results demonstrate the system's strong robustness and practical utility under diverse operational conditions, achieving over 99% detection accuracy during cumulative field tests lasting up to 25 hours. This confirms the system's suitability for intelligent monitoring and safety warnings of combustible gas leakages in industrial environments.
Augmented reality (AR) smart glasses have garnered significant interest and are often regarded as the future alternative to smartphones. Micro-light emitting diodes (micro-LEDs) offer numerous advantages, including compact size, high efficiency, and excellent reliability, making them ideal for display applications in AR glasses. In this work, we present both monochrome and monolithic full-color micro-LED displays designed for the application of AR glasses. The monolithic full-color micro-LED display incorporates quantum dots into blue micro-LED pixels. A high color conversion efficiency of 40% has been achieved by QDs embedded into a nanoporous GaN as the color conversion layer. Full-color micro-LED display has been demonstrated.
Perovskite solar cells (PSCs) have rapidly developed in the past few years, with a record efficiency exceeding 25%. However, the long-term stability of PSCs remains a challenge and limits their practical application. Many high-performance PSCs have an n-i-p device architecture employing 4-tert-butylpyridine (t-BP) and bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI) as bi-dopants for the hole-transporting layer (HTL). However, the hygroscopicity of Li-TFSI and low boiling point of t-BP negatively impact the moisture stability of these PSC devices. Herein, we report the use of the fluorine-containing hydrophobic compound tris(pentafluorophenyl)phosphine (35FP) as a dopant for poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA). With better hydrophobicity and stability than undoped PTAA, a PSC device containing 35FP-doped PTAA demonstrated improved charge transport properties and reduced trap density, leading to a significant enhancement in performance. In addition, the long-term stability of a 35FP-doped PTAA PSC under air exposure without encapsulation was demonstrated, with 80% of the initial device efficiency maintained for 1,000 h. This work provides a new approach for the fabrication of efficient and stable PSCs to explore hydrophobic dopants as a substitute for hydrophilic Li-TFSI/t-BP.
The self-assembly process for compatible functional layers of devices is a simple, feasible, and energy-saving strategy. In mesopor-ous perovskite solar cells (PSCs), compact and scaffold TiO2 films generally function as the hole-blocking and electron-transporting layers, re-spectively. However, both of these layers are usually generated through a high-temperature annealing process. Here, we deposited TiO2 com-pact films through a room-temperature self-assembly process as effective hole-blocking layers for PSCs. The thickness of TiO2 compact films can be easily controlled by the deposition time. Through the optimization of TiO2 compact films (80 nm), the power conversion efficiency (PCE) of mesoporous PSCs without and with hole conductor layers increases up to 10.66% and 17.95%, respectively. Notably, an all-low-tem-perature planar PSC with the self-assembled TiO2 layer exhibits a PCE of 16.41%.
新型杂化钙钛矿材料因其独特的光电特性可制备成半透明太阳能电池,应用于建筑物幕墙,实现对太阳能的收集.本文从光伏型智能窗的最新研究进展出发,归纳了钙钛矿太阳能电池应用到绿色建筑智能窗的主要方法和目前实现钙钛矿太阳能电池透明化的主要技术,并预测了其应用于智能窗的透明度和效率等问题.此外,采用随机抽样的方法进行用户调研,分析了光伏窗的成本与收益,对其商业应用前景进行了展望.
The present study systematically investigates the morphology and crystallization process of inorganic CsPbBr3 perovskite layer films fabricated by thermal coevaporation in conjunction with continuous low-temperature thermal annealing to promote in situ dynamic thermal crystallization. The results confirm for the first time that both the crystal grain size and the compactness of the CsPbBr3 films can be tuned during the thermal coevaporation fabrication process via in situ dynamic thermal crystallization. The performance of the PeLEDs employing the CsPbBr3 films as the emitter layer is investigated in detail with respect to the substrate temperature and deposition rate employed during deposition of the CsPbBr3 film. This study provides guidelines for developing suitable film production processes and highlights future challenges that must be addressed to facilitate the commercial development of large-area, uniform, and flexible perovskite-based optoelectronic devices.