Microelectromechanical systems (MEMS) are among the most significant applications of piezoelectric materials. Piezoelectric thin films are used both for sensing and actuating even if their high efficiency in actuation allowed to develop challenging solutions in the field of MEMS mirrors. MEMS mirrors market has grown very fast in last decades covering many applications such as pico-projectors and LiDAR. The increase of ST customers for this application has been translated into a large products portfolio for consumer's market. The requirement is the technology validation together with the device design. Therefore, the analysis of suitable reliability tests to ensure competitive performances for each product over stress and time is mandatory. In this manuscript we focus on a two-steps stress test developed by AMS R&D team. The aim is the analysis of the stress effects onto sol-gel PZT micro-mirrors to gain comprehension about the reliability of our products under practical usage.

Single-axis rotational micromirrors actuated by comb finger structures have been designed in view of their application in reflective scanning picoprojectors for laser beam displacement along two perpendicular directions to obtain a raster scan scheme. A resonant mirror operating at a frequency around 25 kHz, suitable for horizontal scans, as well as a linear mirror, suitable for vertical scan at the typical video refresh rate (60 Hz), have been fabricated by Silicon-on-Insulator technology and are illustrated in this paper. We have in particular exploited the potentialities of semiconductor laser self-mixing interferometry, a powerful technique for characterizing the dynamic response of MEMS, for detecting the electromechanical response of both kinds of micromirrors. We report the results of the spot optical measurements performed on resonant and linear mirrors aimed at detecting the frequency of the fundamental rotational mode as well as of the in-plane and out-of-plane modes, close in frequency to the fundamental mode. We have experimentally demonstrated that the fabricated devices are suitable for high-resolution miniaturized projectors, in terms of frequency response and scanning angle.

A 65nm NOR flash technology, featuring a true 10lambda2 , 0.042mum2 cell, is presented for the first time for 1bit/cell and 2bit/cell products. Advanced 193nm lithography, floating gate self aligned STI, cobalt salicide and three levels of copper metallization allow the integration with a high density and high performance 1.8V CMOS