Owing to their unique structural and electronic properties, transition metal dichalcogenides have recently attracted significant attention for advanced electronic device applications. In this study, we report the first investigation on the resistive switching behavior of MnTe2-based device with a W/MnTe2/W structure, in which tungsten is employed as a passive electrode to suppress undesired electrode reactions. The device exhibits both volatile and nonvolatile resistive switching behaviors, demonstrating the versatility of MnTe2-based device. The nonvolatile resistive switching behavior is attributed to the formation and annihilation of voids driven by thermally assisted electromigration of Mn and Te ions. Furthermore, Te clustering near the electrode interface gives rise to a self-selective behavior, which may eliminate the need for an external selector in three-dimensional cross-point architectures.

Transition metal dichalcogenides (TMDs) have attracted significant interest due to their potential to overcome scaling limitations in advanced electronic devices, making them promising candidates for next-generation electronics and optoelectronics. Conventional fabrication methods such as chemical vapor deposition and molecular beam epitaxy enable TMD thin-film growth; however, various issues such as long deposition times and stringent substrate requirements hinder direct growth on standard silicon wafers, limiting large-scale manufacturing. In this study, VTe2 (a type of TMDs) thin films are fabricated via radiofrequency magnetron cosputtering, a technique well suited for uniform, large-area deposition. The as-deposited amorphous films crystallize into layered VTe2 structures upon annealing to 473 K, as confirmed by X-ray diffraction and cross-sectional transmission electron microscopy. Hall-effect measurements indicate a substantial increase in carrier mobility and reveal a change in electrical conduction behavior from semiconductor-like to metallic upon crystallization. This work represents the first comprehensive study of large-area layered VTe2 thin films deposited by sputtering, with a systematic evaluation of their structural, electrical, and optical properties across the amorphous-to-crystalline phase transition.

Cu-4Cr-2Nb (at%) alloy developed by NASA (National Aeronautics and Space Administration) is a promising Cu alloy that combines high strength and high conductivity. Recently, the Cu-4Cr-2Nb alloy manufactured by Laser powder bed fusion (L-PBF) process has been attracted attention because a large amount of alloying elements are dissolved in Cu-matrix phase due to ultra-rapid solidification, resulting in significant age hardening. This study investigated the microstructural changes of Cu-4Cr-2Nb alloy that occur before and after L-PBF process and during post-aging treatment. The L-PBFed alloy was aged at 200-700 degrees C for 2 h in an Ar atmosphere. XRD results suggested that Cr2Nb phase, which existed in the alloy powder, was melted by L-PBF process and then formed again during aging. TEM observation revealed that the aging treatment causes the precipitation of fcc-Cr phase in the fcc-Cu matrix. The observation also suggested that bcc-Nb phase existed in the as-built sample changes to Cr2Nb phase by aging. The obtained results indicated that the mechanism of precipitation strengthening in L-PBF Cu-4Cr-2Nb alloy is mainly due to the formation of metastable fcc-Cr phase during aging. [doi:10.2320/matertrans.MT-M2025173]

Magnesium (Mg) alloys offer significant potential for reducing the weight of transportation equipment, thereby lowering fuel consumption. However, their broader application is hindered by the inherent trade-off between ductility and strength. Developing a multimodal microstructure has emerged as a promising strategy to address this challenge. While severe plastic deformation techniques can achieve such structures, their practical implementation remains limited. This study explores vortex extrusion—a simple and efficient process that imparts both strain and shear—as a means to refine the microstructure of Mg-2Y-1Zn (at.%) alloys containing long-period stacking ordered (LPSO) phases. Extrusions were conducted at 623 K, with a ram speed of 0.1 mm/s, an extrusion ratio of ∼14, and die angles (α) of 30°, 60°, and 90°. Vortex extrusion, with a fixed die angle of 60°, was performed by twisting billets at 90° and 180°. Recrystallization was enhanced by increasing die and twist angles. TEM analysis revealed that kink deformation of the LPSO phase acted as nucleation sites for recrystallized grains, which subsequently developed nanolamellae through solute atom rearrangement. The highest hardness and strength under compression were observed at α = 60°, while higher die angles led to strength reduction due to grain coarsening from processing heat. Notably, vortex-extruded material with a 180° twist outperformed conventionally extruded samples in hardness, strength, and elongation. This enhancement is attributed to increased shear strain from vortex extrusion, promoting extensive kink deformation and fine recrystallized grains embedded with solute-rich nanolamellae. These results demonstrate the potential of vortex extrusion as a practical technique for optimizing the mechanical performance of Mg alloys.

Owing to their unique structural and electronic properties, transition metal dichalcogenides have recently attracted significant attention for advanced electronic device applications. In this study, we report the first investigation on the resistive switching behavior of MnTe 2 ‐based device with a W/MnTe 2 /W structure, in which tungsten is employed as a passive electrode to suppress undesired electrode reactions. The device exhibits both volatile and nonvolatile resistive switching behaviors, demonstrating the versatility of MnTe 2 ‐based device. The nonvolatile resistive switching behavior is attributed to the formation and annihilation of voids driven by thermally assisted electromigration of Mn and Te ions. Furthermore, Te clustering near the electrode interface gives rise to a self‐selective behavior, which may eliminate the need for an external selector in three‐dimensional cross‐point architectures.

Transition metal chalcogenides (TMCs) offer structural diversity and tunable electronic properties, making them attractive for functional semiconductor applications. However, many TMCs exhibit intrinsic n-type or ambipolar conduction, and exploring p-type chalcogenides remains a key challenge. In particular, manganese telluride (MnTe) distinguishes itself by maintaining a p-type behavior across multiple polymorphs. In this study, we demonstrated that MnTe thin films exhibit p-type conduction in both the metastable β-phase (hexagonal wurtzite-type structure) and stable α-phase (hexagonal nickeline-type structure, NiAs-type). Optical spectroscopy revealed band gaps of ≈ 2.35 eV for β-MnTe and ≈ 1.35 eV for α-MnTe. Conversely, hard X-ray photoelectron spectroscopy of the valence band confirmed a Fermi-level alignment consistent with p-type behavior. Moreover, electrical measurements of the MnTe/Al-doped ZnO (n-type) heterojunctions revealed rectifying behavior, confirming the formation of a p-n junction. Furthermore, β-MnTe (metastable phase at room temperature) was successfully employed as a channel material in p-type field-effect transistors, marking the first demonstration of transistor functionality in this polymorph. These results establish MnTe as a rare example of a polymorphic chalcogenide that consistently exhibits p-type conduction and highlight the unique suitability of β-MnTe for transistor applications.

Eutectic Al-Ca was investigated as a lightweight and cost-effective alternative to rare-earth-containing Al-Ce for high-temperature applications. Comparative tensile tests showed that Al-7.6Ca retained a superior strength after exposure to 300 degrees C for 100 h, achieving a tensile strength that was 38% greater than that of Al-10.6Ce at a lower density. Microstructural observations revealed that the eutectic Al4Ca phase formed a dense and thermally stable lamellar network, whose fine lamellar architecture and connectivity were largely preserved after thermal exposure. Topological data analysis further indicated that the lamellar network in Al-Ca exhibits a highly connected structure, suggesting enhanced resistance to strain localization and damage accumulation. First-principles calculations and thermomechanical measurements confirmed that the Al4Ca phase undergoes a reversible martensitic transformation with a small transformation enthalpy. Although prolonged exposure introduced internal defects within the Al4Ca lamellae and slightly reduced ductility, the lamellar network remained structurally stable and contributed to strength retention. These results indicate that the superior high-temperature performance of the Al-Ca alloy is closely associated with the thermally stable and highly connected lamellar architecture. The findings highlight the potential of topological microstructural design for developing rare-earth-free aluminum alloys with improved high-temperature mechanical performance.

Gliomas rely on translational plasticity to sustain heterogeneity, stemness, and immune evasion. Here we identify the tRNA dioxygenase ALKBH1 as a central regulator of codon-biased translation and tumor microenvironment remodeling. LC-MS/MS profiling of patient tumors revealed enrichment of ALKBH1-mediated wobble cytidine oxidation modifications in high-grade gliomas. Genetic perturbation demonstrated that ALKBH1 overexpression slows proliferation in vitro but worsens survival in vivo by promoting glioma stem-like and neuronal states and suppressing anti-tumor immunity. Ribosome profiling showed that ALKBH1 establishes an A/T-ending codon-biased translational program, enhancing decoding of rare leucine codons (TTA/TTG) and driving synthesis of pro-stemness transcripts. Single-cell RNA-seq analyses further revealed that ALKBH1 promotes glioma heterogeneity and induces neuronal cell clusters and rewires intercellular communication ECM-related signaling while dampening immune pathways and reducing immune infiltration. These findings establish a mechanistic link between tRNA oxidation, codon bias, and glioma aggressiveness, positioning ALKBH1 as a potential therapeutic target for glioma. ### Competing Interest Statement The authors have declared no competing interest. Japan Society for the Promotion of Science, 23H02741, 20KK0338, 24K18149 Japan Science and Technology Agency, JPMJPS2023

Metallic alloys typically follow the Mooij rule, which describes the trade-off relationship between electrical resistivity and the temperature coefficient of resistivity (TCR). Fe-20Mn-11Al-5Cr-1C-0.01B (mass%) alloy, annealed at temperatures ranging from 600 degrees C to 1000 degrees C, deviates from the Mooij rule and exhibits excellent electrical properties, including high electrical resistivity and low TCR. X-ray diffraction measurements revealed that the constituent phases of the alloys are alpha-, gamma-, kappa-, and carbide phases. TCR is significantly influenced by the fraction of alpha-phase, the concentration of solute elements in the matrix phases, magnetism, and the quantity of precipitated carbides in the matrix. The results indicate that controlling the microstructure of metallic alloys can achieve high resistivity and low TCR, thereby deviating from the Mooij rule.

This study demonstrates the first investigation of sputtered polymorphic Cr–Mn–Te ternary films, which hold promise for spintronic and magnetic semiconductor applications, focusing on their magnetic properties. Notably, ferromagnetism, which was initially absent in the as-deposited Cr0.17Mn0.34Te0.49 [(Cr,Mn)Te] films, was observed with increasing annealing temperature and persisted despite the polymorphic change from the wurtzite-type structure (β-phase) to a stable NiAs-type structure (α-phase) by x-ray diffraction measurement and transmission electron microscopy observation. We demonstrated that the (Cr,Mn)Te film exhibited a unique polymorphic change, which was characterized by multiple electrical resistance states. Magnetic measurements revealed that the low-resistance phases of β-(Cr,Mn)Te and α-(Cr,Mn)Te films exhibited ferromagnetic behavior at room temperature, with Curie temperatures of 367 and 389 K, respectively. The emergence of ferromagnetism might be attributed to Cr incorporation, resulting in the generation of defects in the Mn–Te lattice. These pioneering findings highlight the potential of Cr-incorporated films, which combine magnetic and semiconducting properties, for applications in energy-efficient information processing.

Phase‐change random access memory (PCRAM) is a leading candidate for emerging nonvolatile memory devices due to its fast switching speed, scalability, and complementary metal‐oxide‐semiconductor (CMOS) compatibility. However, traditional PCRAM relies on amorphous‐to‐crystalline switching, which suffers from high energy requirements and reliability issues. To address these challenges, in this study, the crystalline polymorphic phase‐change behavior as an alternative, which eliminates reliance on the amorphous phase and its associated limitations, is investigated. Herein, the transition‐metal tellurides, specifically a VTe binary system, are focused on and their potential for polymorphic phase transitions is investigated, leveraging insights from the crystalline polymorphic switching's dynamics of MnTe melting free phase‐change material. The binary phase diagram of VTe suggests that the polymorphic transition between the V 3 Te 4 and V 5 Te 8 phases can be obtained in the composition of V:Te ≈ 0.4:0.6. In this study, a VTe thin film is deposited and its polymorphic transition properties are investigated. The associated electrical and optical property changes are also analyzed. Finally, a VTe‐based memory device is fabricated and tested.

Phase engineering has been extensively explored in 2D van der Waals (vdW) materials, especially in transition‐metal dichalcogenides, whereas less focus has been given to phase transitions in lower‐dimensional systems. In this study, a transformative phase transition phenomenon in 1D vdW materials is reported, for the first time, with a focus on niobium tetra‐telluride (NbTe 4 ). Through precise compositional control during sputtering deposition followed by strategic thermal annealing, the phase stability is elucidated between the amorphous, monoclinic, and tetragonal phases in NbTe 4 thin films. It is found that the monoclinic‐to‐tetragonal phase transition exhibited a pronounced insulator–metal transition behavior, accompanied by a significant change in resistance. High‐resolution transmission electron microscopy revealed atomic‐scale structural modifications, shedding light on the underlying mechanisms propelling this phase transition. Notably, the reversibility of this phase transition is demonstrated under electrical pulses, underscoring the potential of 1D vdW materials across a range of applications, from electronics to optoelectronics.

Al-Cu alloys have attracted attention for their high performance among commercial aluminum alloys, retaining strength up to 200 degrees C owing to precipitation hardening. This study examines the influence of vanadium additions on the precipitation and coarsening behavior of 9 ' precipitates in Al-5Cu alloys. The addition of V increased the activation energy for 9 ' precipitation from 58.39 kJ/mol to 86.20 kJ/mol, effectively retarding precipitation kinetics by reducing Cu diffusivity through strong vacancy binding. Furthermore, the coarsening rate of 9 ' precipitates at 300 degrees C was reduced in the V-containing alloy. As a result, the yield strength and tensile strength of the V-containing alloy increased by 16-17 % in the peak-aged condition, and by 32-58 % after thermal exposure at 300 degrees C. Although V does not stabilize 9' precipitates through interfacial segregation, it provides a cost-effective alternative for enhancing thermal stability through a diffusion-controlled mechanism. These results contribute to the development of Al-Cu alloys with improved performance and enhanced microstructural stability.

The phase‐change potential of an as‐deposited chromium telluride (CrTe) thin film is investigated by focusing on its crystalline‐to‐crystalline polymorphic transition. Transmission electron microscopy determined that the as‐deposited CrTe thin film exhibits a hexagonal crystal structure that changes to a monoclinic crystal structure upon annealing at 500 °C. This alteration of the crystal structure is accompanied by a large change in carrier concentration of around two magnitudes and a very small corresponding change in resistivity. The memory switching of a fabricated phase‐change memory device utilizing a CrTe thin film active layer demonstrates a pronounced resistance disparity between SET and RESET states compared to the resistance change upon phase change in the thin‐film case. This disparity is attributed to variations in the contact resistivity of the memory device, which are driven by changes in the carrier concentration upon the crystalline polymorphic transition. Electrical pulse measurements confirm that the resistance change is reversible and repeatable, highlighting the material's potential for phase‐change random access memory applications.

Quasi-one-dimensional (quasi-1D) van der Waals (vdWs) materials, such as ZrTe5, exhibit unique electrical properties and quantum phenomena, making them attractive for advanced electronic applications. However, large-scale growth of ZrTe5 thin films presents challenges. We address this by employing sputtering, a common semiconductor industry technique. The as-deposited ZrTe5 film is amorphous, and post-annealing induces a crystallization process akin to transition-metal dichalcogenides. Our study investigates the electrical and optical properties during this amorphous-to-crystalline transition, revealing insights into the underlying mechanism. This work contributes to the fundamental understanding of quasi-1D materials and introduces a scalable fabrication method for ZrTe5 which offers the possibility of fabricating unique future electronic and optical devices.

The tRNA epitranscriptome has been recognized as an important player in mRNA translation regulation. Our knowledge of the role of the tRNA epitranscriptome in fine-tuning translation via codon decoding at tissue or cell levels remains incomplete. We analyzed tRNA expression and modifications as well as codon optimality across seven mouse tissues. Our analysis revealed distinct enrichment patterns of tRNA modifications in different tissues. Queuosine (Q) tRNA modification was most enriched in the brain compared to other tissues, while mitochondrial tRNA modifications and tRNA expression were highest in the heart. Using this observation, we synthesized, and delivered in vivo, codon-mutated EGFP for Q-codons, where the C-ending Q-codons were replaced with U-ending codons. The protein levels of mutant EGFP were downregulated in liver, which is poor in Q, while in brain EGFP, levels did not change. These data show that understanding tRNA modification enrichments across tissues is not only essential for understanding codon decoding and bias but can also be utilized for optimizing gene and mRNA therapeutics to be more tissue-, cell-, or condition-specific.

Abstract The development of bio-based adhesives, to the extent possible without harmful chemicals derived from fossil resources, is very important for the sustainable use of wood-based materials. In this study, we investigated the possibility of glycerol as a bio-based adhesive by manufacturing wood-based moldings. The raw materials used were glycerol and wood powder of Japanese cedar (Cryptomeria japonica). The moldings were manufactured under hot-pressed at 160–220 °C and 4 MPa for 10 min. The glycerol content varied from 0 to 30 wt%. Color differences in the resulting molding increased with increasing glycerol content and hot-press temperature, suggesting that chemical changes occur during hot pressing in the presence of glycerol. The best bending properties of the moldings were obtained under manufacturing conditions of 15 wt% glycerol and 220 °C. In the water resistance test using boiling water, weight gain and thickness swelling of moldings were inhibited with increasing glycerol content. The moldings manufactured at hot-press temperatures above 200 °C developed water resistance. Ether linkages were detected by Fourier transform infrared spectroscopy and heteronuclear single quantum coherence nuclear magnetic resonance spectroscopy. Our results demonstrated that good adhesiveness is achieved by ether linkages resulting from the chemical reaction between glycerol and wood powder.

The high-temperature strength of aluminum alloys must be enhanced for improving their applicability across industries. This study proposes a machine learning approach for developing heat-resistant aluminum alloys. Using a combination of correlation-based screening and genetic algorithms, feature selection was performed on descriptors derived from the atomic compositions of alloys. Then, alloy compositions and descriptors were used as input variables of the model to improve its robustness and applicability due to the richness of information. Four distinct alloys were discovered by employing Bayesian optimization within the framework of a quaternary alloy system. The best alloy demonstrated an exceptional high-temperature strength of 175 MPa at 300 °C in the absence of heat treatment. Microstructural analyses of these alloys indicated the critical role of vanadium-rich intermetallics in enhancing the high-temperature strength of aluminum alloys. Furthermore, the output of the model was explained using the SHapley Additive exPlanations method. The findings emphasize the critical importance of titanium and vanadium in enhancing the high-temperature strength of aluminum alloys tailored for environments with high thermal stress.

This study explores the conduction mechanism of NbTe 4 , a novel phase-change material (PCM) for phase-change random access memory (PCRAM), and addresses the limitations of the widely used Ge 2 Sb 2 Te 5 (GST). Unlike traditional PCMs, NbTe 4 in its amorphous state demonstrates low resistance, which indicates semiconductor behavior. However, the Hall and Seebeck coefficient measurements reveal an intriguing anomaly-amorphous NbTe 4 displays N-type conduction with Hall voltage and P-type conduction in the positive Seebeck coefficient. This Hall effect anomaly, which is typically associated with highly resistive chalcogenide materials, raises questions about the conduction mechanism in amorphous NbTe 4 . This study delves into the electrical transport properties of NbTe 4 and provides insights into the unique characteristics of this PCM.

The purpose of this study was to demonstrate Japanese radiographic examination codes JJ1017 in establishing typical values for a wide variety of general radiography. About 200,000 sets of examination data were collected, including exposure conditions, JJ1017 code applied, examination room numbers and patient information. Typical values for adults, children, and infants were calculated from the collected data, and the following items were examined: comparing typical values of general radiography in Japan DRLs 2015 and typical values in a facility; comparison of typical values between X-ray equipment for examinations of DRLs 2015; comparison of typical values for different procedures at the same anatomical site; identification of examination items associated with high radiation doses. The total numbers of JJ1017 codes applicable to the examinations were 45,372 for adults, 542 for children, and 2339 for infants. To calculate the typical values and compare these with the DRLs, we used a combination of JJ1017 anatomical codes, posture codes, and direction of radiation codes. The combination of these codes allowed the calculation of a typical value and comparison with DRLs 2015. Comparison between devices reveals differences in radiation doses and provides an opportunity to review the characteristics of the devices and their operation to suggest dose reductions. By calculating typical values for examination items for which the DRLs were not available, we were able to identify examination items with high doses in a facility and suggest items that should be audited in the facility.