The purpose of this study is to examine the low dose rate total ionizing dose (TID) susceptibility of the SFT2222A NPN bipolar junction transistor (BJT) manufactured by Solid State Devices, Inc. (SSDI).

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

We show radiation test results of products developed for space applications. The parts include the AD9689, AD9246S, and RT2378 analog-to-digital converters, the RH5596 and ADL6010S RF power detectors, and the RH3845 step-down regulator controller. The products were evaluated for TID and SEE.

We evaluated the effects of heavy ion and proton irradiation for a 3-D NAND flash. The 3-D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of identical density in the multiple-level cell (MLC) storage mode. The 3-D NAND showed significantly reduced SEU susceptibility in single-level-cell storage mode. In addition, the 3-D NAND showed less multiple-bit upset susceptibility than the planar NAND, with fewer number of upset bits per byte and smaller cross sections overall. However, the 3-D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3-D NAND and the Micron 16-nm planar NAND, which suggests that typical heavy ion test fluences will underestimate the upset rate during a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

The purpose of this test is to determine the heavy ion-induced single-event effect (SEE) susceptibility of the AD9364 from Analog Devices.

The purpose of this test campaign is to determine the heavy ion-induced single-event effect (SEE) susceptibility of the AD9257-EP from Analog Devices.

The purpose of this study is to examine the total ionizing dose susceptibility for the UC1823A pulse width modulator manufactured by Texas Instruments, Inc. The part is suspected to be vulnerable to enhanced low dose rate sensitivity (ELDRS).

This is a Total Ionizing Dose (TID) test report for the Analog Devices AD9364 RF Transceiver.

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

We investigated the heavy ion single-event effect (SEE) susceptibility of the industry's first stand-alone memory based on conductive-bridge memory (CBRAM) technology. The device is available as an electrically erasable programmable read-only memory. We found that single-event functional interrupt (SEFI) is the dominant SEE type for each operational mode (standby, dynamic read, and dynamic write/read). SEFIs occurred even while the device is statically biased in standby mode. Worst case SEFIs resulted in errors that filled the entire memory space. Power cycle did not always clear the errors. Thus the corrupted cells had to be reprogrammed in some cases. The device is also vulnerable to bit upsets during dynamic write/read tests, although the frequency of the upsets are relatively low. The linear energy transfer threshold for cell upset is between 10 and 20 MeV·cm 2 /mg, with an upper limit cross section of 1.6 × 10 - 11 cm 2 /bit (95% confidence level) at 10 MeV· cm 2 /mg. In standby mode, the CBRAM array appears invulnerable to bit upsets.

We show the single-event effect characteristics of a production-level embedded resistive memory. The resistive memory under investigation is a reduction-oxidation random access memory embedded inside a microcontroller. The memory structure consists of Ir top electrode, Ta2O5-δ/TaOx metal-oxide, and TaN bottom electrode. The radiation testing focused on the resistive memory array and peripheral circuits, while other portions of the microcontroller were shielded against the ion beam. We found that the resistive memory array is hardened against heavy ion and pulsed-laser-induced bit upsets. However, the microcontroller is susceptible to single-event functional interrupts due to single-event upsets in the resistive memory peripheral control circuits, which comprise of CMOS elements. Furthermore, the resistive memory architecture is not susceptible to functional failures during write, which is problematic for flash memories due to radiation-induced charge pump degradation.

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.

We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.

We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.

We present the results of single-event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear, and hybrid devices.