We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to heavy ion and proton induced single event effects (SEE), proton-induced displacement damage dose (DDD), and total ionizing dose (TID).
The results of single event effect (SEE) experiments on fully-depleted silicon-on-insulator (FDSOI) static random- access memory (SRAM). Testing was conducted using several different ion species from the 88-inch cyclotron at the Lawrence Berkeley National Laboratory (LBNL). The SRAM and register file structures showed sensitivity to the lowest tested LET (~3 MeV-cm 2 /mg), and an approximate saturated cross section around $1\mathrm{x}10^{-10}$ cm2, More importantly, the SRAM performance was consistent with earlier tests and extended results by adding register file blocks which utilized full assist structures.
The Aerospace Corporation performed total ionizing dose (TID) and proton testing on the AMD Ryzen 3200G processor. The Ryzen processor is a system on chip that contains a 4-core central processing unit (CPU) and an integrated graphical processing unit (GPU). No changes in CPU performance were observed until 600 krad(Si) of dose, while changes to GPU performance were first noticed at 500 krad(Si). Degradation in CPU performance was only observed in processes requiring access to off chip memory, suggesting that radiation effects are most prevalent in the I/O circuitry and not in the digital logic or internal registers.
This paper reports recent single-event effects measurements results for a variety of microelectronic devices that include a voltage level translator, bus driver/buffer, DC-DC buck converter, load switch, power protection mux, transceiver, wireless transceiver, and wireless MCU. The data were collected to evaluate these devices for possible use in NASA Mars missions.
We report SEE performance of A53 processors in Raspberry Pi 3B+ (BCM2837) and MYiRTech MYC-C8MMQ6 (IMX8M). Error correction features and process SEE performance result in significant reduction in SEFI sensitivity.
We report the combined results of the high-precision, 14-bit, 1 MSPS SAR analog-to-digital converter after exposure to $5 \mathrm{x}10^{11},2\mathrm{x}10^{12}$ , and $1 \mathrm{x}10^{13}$ neutrons/em 2 followed by 100 krad(Si) LDR total ionizing dose.
A family of radiation hardened P-channel power MOSFETs was developed that were the first P-channel FETs based on Superjunction technology. This work discusses SEE and TID test results of -60V, -100V and -200V P-channel MOSFETs.
Results are presented from the third version of the Radiation Hardened Electronic Memory Experiment (RHEME-3) performed on the STPSat-6 mission in a geostationary orbit.
The sensitivity of a variety of components for particle accelerator electronics has been analyzed against Single Event Effects, Total Ionizing Dose and Displacement Damage. The tested parts include analog, linear, digital, and mixed devices.
Single-event effects testing (heavy-ion and proton) is presented for 96- and 176-layer commercially-available 3D NAND flash memory, with emphasis on SEFI detection and recovery.
This paper presents the latest single event effects (SEE) test results of the Xilinx soft error mitigation (SEM) core under proton irradiation. The Xilinx SEM code is used on a software-defined radio which uses the Xilinx Zynq-7020 system on-chip. The SEM core is being tested under different conditions to validate its performance under proton irradiation. In this test, the SEE susceptibility and dependency of programmable logic (PL) utilization and different flux configurations are evaluated. The test results show good performance of the SEM core under low proton flux conditions with no impact of field programmable gate array (FPGA) resource allocation.
This paper presents the investigation of the Xilinx Zynq-7000 system on-chip (SoC) integrated analog to digital converter (XADC) for single event effects (SEE) under proton irradiation. The SoC is equipped on a software-defined radio (SDR) that uses the XADC as system-internal current monitoring circuit to initially detect high current events and to prevent destructive damages of the system. The test results showed minor susceptibility to SEEs under proton irradiation up to an energy of 184 MeV. Nevertheless, the configuration of the XADC is crucial to determine SEEs as discussed in this paper.
This paper presents the single event response of AMD/XILINX 7nm Versal ACAP dual R5 and dual A72 ARM core processor system (PS) for space applications. The PS was evaluated using Xilinx's System Validation Tool (SVT) design suite. An accelerated particle beam experiment of an XCVC1902 device was performed using the heavy-ion source at Berkeley BASE and proton sources at Crocker Nuclear Laboratory (CNL) and TRIUMF. More than 10 million designs exercising all the PS power domains were generated during the test. The PS single-event results are presented and categorized in terms of detectability and correctability. No SEL was observed in the PS up to a LET of 80 MeV-cm 2 /mg, 110°C, and VCCmax operating values. With all PS safety mechanisms enabled, beam test results show that the overall PS SEFI rate in GEO is 0.16 SEFI per year and 1 SEFI per year (at 500km and 51.6° inclination) in LEO. Also, no uncorrectable events were observed in the PS caches and RAMs.
64 MeV proton irradiation test campaigns were conducted on pixel technologies that span the range of commercially available electronic displays for crewed missions. Human-centric optical performance metrics and at-facility characterization techniques are discussed and reported for assessment of pixel radiation susceptibilities.
This work presents the degradation of the GaAsP and AlGaAs optocouplers as a result of the displacement damage produced by neutron radiation. The devices were irradiated using a (14.5 ± 0.4) MeV monoenergetic neutron beam on the Frascati Neutron Generator (FNG). In particular, the degradation of the Current Transfer Ratio (CTR) parameter is studied, and it can be represented as an exponential function of the fluence for the HCPL-5530, HSPL-5730, IBS-249, IHS-300, OLF-400, and OLS-300 optocouplers.
Results of neutron induced single event upset testing of the Infineon (Cypress) FM25CL64B-GA 64Kbit (8Kx8) Serial FRAM are described for 14-MeV and moderated 14-MeV environments. Five samples were irradiated with a 14-MeV neutron source. The units were tested after being irradiated statically as well as under bias using multiple combinations of continual read and write/read loops and using a variety of bit patterns. Results for single event functional interrupt (SEFI) and single event upset (SEU) errors are presented along with cross section data and soft error rates.
We present 22 nm FDSOI transistor total ionizing dose (TID) induced threshold voltage $(\mathrm{V}_{\mathrm{t}})$ shifts measured on a packaged array test structure. Results demonstrate high current fidelity and $\mathbf{V}_{\mathrm{t}}$ vs. dose consistency and repeatability.
We present single event effects (SEE) results for a variety of microcontrollers and microprocessors. The devices tested include Blackfin embedded processors from Analog Devices, automotive-grade TI and Infineon micro controllers with multiple safety features, and the MSP430FR5994.
We report the single event effects and total ionizing dose test results for the ISL73041SEH radiation hardened PWM input 12V Half Bridge GaN FET driver.
This study investigates the effects of ionizing radiation on the performance of 3-D NAND chips. We observe increased peak current consumption during erase and program operations from the irradiated chip. Additionally, our measurement shows a significant rise in erase time after TID ~ 50 krad(Si), which gradually stabilized after a few months of room-temperature annealing. Conversely, no considerable change was noted in program time. The findings suggest ionizing radiation notably influences the threshold voltages of all MOSFET devices, affecting the operation of peripheral circuit components such as charge-pumps. This may lead to greater chip latency due to slower operations, such as erase operations. The increased peak current draw for various operations necessitates focusing on power, particularly critical for parts deployed in irradiation-prone environments like space, which depend on battery power.
