This paper analyzes the challenges of evaluating the single event effect (SEE) sensitivity parameters of integrated circuits at the ISKRA facility, part of the NICA nuclotron complex at JINR in Dubna. A distinctive feature of this complex is the availability of very high-energy ions in the range of 150 to 500 MeV/nucleon, which allows irradiation of electronic devices in air and without prior decapsulation (i.e. removal of the portion of the package above the die surface). However, at such high energies, the linear energy transfer (LET) values remain below 30–40 MeV cm2/mg even for heavy ions higher LET values therefore requires an energy degrader. However, as the primary ions pass through the degrader, the package, and other intervening material, they lose their energy unevenly and also produce secondary particles. The net result is a broadened LET spectrum in the device's active layer. This paper presents the results of numerical simulation of changes in energies, LET, and the contribution of secondary particles using the SRIM and Geant4 software. The simulations show that the contribution of secondary particles is significant in the region of low LET values and in the "tail" region when primary particles are almost completely absorbed. We propose a methodological approach for evaluating the SEE sensitivity parameters of electronic devices over the LET range accessible at the ISKRA facility by varying the degrader thickness. It is shown that due to scattering and nuclear reactions, significant uncertainties occur ion energies when they are slowed down to values below 10...15 MeV/nucleon.

The paper analyzes the possible to apply of the SOCHI stand for the purpose of controlling the immutability of the chip`s topology in order trust (in reliable and safe operation). One of the characteristics of an integrated circuit (IC), which is determined by topology and design standards, is sensitivity to SEL and SEU (Single-Event Upset). Even minor changes in the topology of an IC can lead to dramatic changes in SEL (Single-Event Latchup) sensitivity parameters, whereas for SEU, changes occur when design standards and library elements will be change. The pulse beam at the SOCHI stand does not allow testing only very sensitive ICs to SEL. However, even in this case, it is possible to determine the LET (Linear Energy Transfer) threshold for SEL. In all other cases, the sensitivity parameters of the IC can be determined.

The paper evaluates the feasibility of using pulsed ion sources to assess the fault tolerance of transceivers exposed to heavy charged particles. It reviews the types of interface integrated circuits (ICs) used in spacecraft for communication within a unit, between units, between devices and external links. Each type of interface IC has specific characteristics that manifest in different types of single-event effects (SEE) and require distinct monitoring approaches. The pulsed nature of the beam at the "SOCHI" test facility complicates the assessment of sensitivity parameters for certain single-event functional interrupts (SEFIs), such as hang–ups, loss of synchronization, massive transmission failures, and packet loss). However, the study demonstrate the applicability of pulsed ion beams for monitoring single-event upsets (SEUs), single-event transients (SETs), and data transmission SEFIs. Furthermore, the method the method provides valuable data on transient parameters in high-speed interface circuits.

The paper analyzes the features of the experimental evaluation of the single event effects (SEE) cross section dependence on linear energy transfer (LET) for ions with energies above 100 MeV/nucleon. Ion energy degraders use in order to change the values of the LET. The paper presents calculations of LET spectrum at different thicknesses of a polycarbonate degrader for iron ions with energies of 100...450 MeV/nucleon as an example. It is proposed to evaluate the LET values in packaged electronic devices with an unknown physical and chemical composition with help of the modified technique used at the ion accelerator at Brookhaven National Laboratory in the USA. An additional technique with preliminary studies on X-ray of packaged electronic is proposed to estimate the mass thickness of the protective layers in integrated circuit. In order to reduce the influence of infamous factors, it is proposed to thin the package based on the results of the analysis of X-ray images. The proposed approach makes it possible to correctly determine the dependence of the SEE cross sections on the LET of both packaged and decapsulated integrated circuits for SEE under high-energy ions. The obtained results are supposed to be used at the specialized ISKRA station, which is part of the NICA nuclotron complex at JINR, Dubna. The presented results make it possible to assess the upset and failure hardness of electronic information systems to the effects of ions of artificial and natural origin.

The paper analyzes the features of the experimental evaluation of the cross sections of single event effects (SEE) under the influence of pulsed ion beams. The main reasons that can distort the results of the experiment are multiple ion exposures to the same sensitive area, several single event effects in different elements of integrated circuit (IC) in one exposure pulse, simultaneous effects of dose rate and ionization reaction from a single nuclear particle. All these effects are analyzed and it is shown that when exposed to an ion pulse with dose rate of less than 106 rad(Si)/s, the effects of dose rate have little effect on the sensitivity of IC to SEE. There may be difficulties when we register single event transient (SET), but due to different reaction parameters, it is possible to separate the effects of dose rate and SET. The effect of ion range on the maximum flux is estimated. It is shown that taking into account the ions range makes it possible to increase the permissible flux several times.

the paper presents a broad investigation of single event effects in ARM microcontroller (MCU) under heavy ion irradiation. Experimental details are presented: device under the test and test setup. The stages of experiments are described: radiation testing using heavy ion accelerator, laser source irradiation and single event functional interrupts simulation campaign. The algorithm of operation of the program injector for conducting campaigns on simulating SEFI is presented. The influence of a real-time operating system on cross-section of SEFI was evaluated. SEFI cross-sections obtained with and without the operating system were compared. A method using fault injection in program and data memory and hardware detection of functional interrupts was tested. The results of SEFI simulation and calculation by engineering model were compared with experimental results. The results obtained differ from each other. Possible explanations of the proposed differences and the correction of the model are proposed. Directions for further research are outlined.

The paper presents an automated system for functional and parametric control of analog-to-digital converters (ADC) during a radiation experiment. The automated measuring system is based on the combined use of modular PXI equipment manufactured by National Instruments and the signal generator SMA100B manufactured by Rohde & Schwarz (R&S). The PXI-4461 module is the most significant module in the system. Hardware and software operations of the measuring system are discussed in the paper. The parameters controlled during total ionizing dose (TID) tests are listed in the paper alongside the algorithm for parametric control. We describe a histogram method for removing input noise. In order to mitigate drawbacks of histogram method, we measured sample median for each ADC code value during the experiment. With the help of this system, the main static and dynamic parameters of test ADCs are calculated and their degradation during irradiation at the Cs-137 isotope source is shown. Specifications for quantifying ADC dynamic performance were based on an FFT results analysis. Typical TID effects in ADCs are observed: degradation of the transfer function and associated deterioration of the accuracy parameters: integral nonlinearity, differential nonlinearity, offset and gain errors.

Some features of dominant radiation effects in modern ICs of information, information-computing and control systems when exposed to neutrons are analysed. Occurrence of all main dominant radiation effects in ICs is possible under influence of neutrons. Thus these investigations are essential due to expanding the scope of practical application of VLSI in control systems of nuclear power and physical facilities, affecting the security of information systems. It is shown that the existing models based on the assessment of the equivalence of the average energy release (dose) do not fully adequately describe the effects of neutron radiation exposure. In some cases, there are occurrence of microdosimetric effects and significant deviations due to differences in the processes of primary recombination of excess charge in oxides. These effects should not be ignored. Ionisation energy depends on neutron energy, which leads to differences in the amplitude-time characteristics of the dose rate and the neutron flux density. A significant reduction in switching charges in modern microelectronics leads to the appearance of single event effects when exposed to neutrons, which must also be taken into account when constructing radiation-resistant electronic facilities. The presented results allow us to correctly assess the resistance of semiconductor electronic products to the neutron effects of artificial and natural origin.

The paper presents an analysis of existing approaches to estimation of single event rate (SER) in integrated circuits under effects of charged particles of space radiation environment. These issues are of significant importance in the light of the expansion of the scope of practical application of cyber-physical control systems for space objects, since it is mainly due to the SER that information is lost in the register elements and in the memory cells of the electronic blocks of spacecraft. It is shown that existing models based on energy deposition in fixed sensitive volume are not applicable for SER estimations in case of high threshold linear energy transfer (LET) values. An alternative approach is proposed. It is based on diffusion charge collection model, which can be used to estimate the SER cross-sections in isotropic particle field. A universal dependence for SER estimation in integral circuits (ICs) at geostationary orbit is proposed and used as a basis for establishing classification of devices based on hardness assurance levels. The obtained results provide the grounds for setting test requirements that has to be met during single event effects testing of ICs.

The paper presents a method for testing ADC, intended for measurement the basic parameters of converters by histogram test (or code density test). This method is ideally suited for modern wide bandwidth high precision ADCs and is universally accepted, especially with the proliferation of standard PC-based software and ADC manufacturer’s evaluation boards. The histogram and Fast Fourier transform (FFT) tests use essentially the same hardware, both are normally part of a comprehensive ADC test plan [1]. Modular Instrumentation System PXI of NI and Signal Generator SMA100B (ROHDE & SCHWARZ) were used as test equipment for the tests. The basic static and dynamic parameters of the ADC AD7888 were calculated using this method. The degradation of the main parameters of the ADC AD7888 under the influence of the absorbed dose at the «RIK-0401» x-ray unit is presented in the paper.

The development of the technological process in electronics has led to the problem of single event upsets (SEU) in microchips when exposed to neutrons causing loss of information and errors. To evaluate sensitivity of CMOS VLSI to SEU caused by neutrons we propose BGR method. To test this approach we apply BGR method to the data obtained by irradiation of several types of ICs:Artix and Spartan FPGAs (Xilinx) and STM32 microcontroller (ST Microelectronics). Test setup was built using modular devices by National Instruments. In this study, we also consider the areas for which neutron influence evaluation is relevant and present an overview of the available data on neutron induced SEU in CMOS chips. A description of the BGR method and experimental results are given.

This article concerns experimental and simulation results on nonstable latchups (SLs) in CMOS integrated circuits (ICs) under pulsed laser irradiation. Different transient responses in elements of the p-n-p-n structure and irregular ionization distribution on the IC surface are the main reasons for non-SLs. Radiation experimental test results are presented as well as a discussion of non-SL mechanisms.

The paper presents single event upset (SEU) experimental results in Spartan-6 FPGA due to direct and indirect proton ionization. High energy proton beam and aluminum foils were used to decrease proton energy down to 1... 20 MeV to observe proton direct ionization upsets.

The results of research on nonstationary latchup effects (LEs) under the influence of heavy charged particles and ionizing radiation pulses, which are spontaneously counteracted depending on the operating conditions, are presented. This behavior is caused by the effects of the rail span collapse inside the complementary metal-oxide-system (CMOS) of very large scale integrated (VLSI) circuits. The experimental studies are carried out on both the ion accelerator and the laser facilities.

Non-stable single event latch-ups (SELs) were analyzed in this paper which vanished without power cycling.This effect depends on the operating conditions of the device under test.The instability of SEL is due to the power drops below the holding voltage.The paper presents experimental results proofing this mechanism of the nonstable SEL occurrence.

The paper presents experimental results about transient single event latch-up (SEL) in CMOS ICs. The rail span collapse is the main reason of nonstationary SELs. A decrease of the voltage applied to n-p-n-p structure can be caused an additional current both in SEL state and in IC dynamic mode.

The paper describes automated system for MIL-STD-1553 integrated circuits functional and parametric control based on National Instruments hardware and software. Automated measuring system block-scheme is presented. The paper discusses the process of ICs testing and software and hardware description.

In the article we introduce histogram method for digital to analog converters’ space radiation testing including both total dose and single event effects. We present new total dose and single event (SEL, SEU and SET) data of three DAC chips, as well as test setup and measurement system structure.

The technique of flip-chip ICs SEE testing based on a joint use of focused laser facility and heavy ions with medium range of 100 μm ... 200 μm is presented.

The paper presents the results of the analysis which was made in attempt to generalize the main single event latchup (SEL) sensitivity parameters such as saturation cross-section and the threshold LET for digital CMOS ICs. We analyzed SEL ion beam tests results for digital CMOS ICs of various functionality and obtained that for most ICs the SEL saturation cross-section may be determined in the relation to the area of IC's crystal.