Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate voltage can be used to set a specific, stable, and reproducible threshold voltage that, over a wide range in gate bias, is equal to that gate bias. Outside this range, the threshold voltage can still be tuned, although the resulting threshold voltage is no longer equal to the applied gate bias during illumination. We present a simple and intuitive model that provides a mechanism for the tunability in gate bias. The model presented also explains why cryogenic illumination is successful at resetting quantum dot qubit devices after undesired charging events.

Epitaxial crystallization of complex oxides provides the means to create materials with precisely selected composition, strain, and orientation, thereby controlling their functionalities. Extending this control to nanoscale three-dimensional geometries can be accomplished via a three-dimensional analog of oxide solid-phase epitaxy, lateral epitaxial crystallization. The orientation of crystals within laterally crystallized SrTiO 3 systematically changes from the orientation of the SrTiO 3 substrate. This evolution occurs as a function of lateral crystallization distance, with a rate of approximately 50° μm −1 . The mechanism of the rotation is consistent with a steady-state stress of tens of megapascal over a 100–nanometer scale region near the moving amorphous/crystalline interface arising from the amorphous-crystalline density difference. Second harmonic generation and piezoelectric force microscopy reveal that the laterally crystallized SrTiO 3 is noncentrosymmetric and develops a switchable piezoelectric response at room temperature, illustrating the potential to use lateral crystallization to control the functionality of complex oxides.

Amorphous BaTiO3 layers deposited on SrTiO3 (001) substrates at room temperature were subsequently crystallized using solid phase epitaxy (SPE). Heating an initially amorphous BaTiO3 layer in air at 650 °C for 3 h resulted in crystallization with components in two distinct crystallographic orientation relationships with respect to the substrate. Part of the volume of the BaTiO3 layer crystallized in a cube-on-cube relationship with the substrate. Other volumes crystallized in four variants of a 70.5° rotation about ⟨110⟩, resulting in a ⟨221⟩ surface normal in each case. Each of these four variants forms a Σ = 3 coincident site lattice with respect to the SrTiO3 substrate and the cube-on-cube oriented BaTiO3. Heating for the same duration and temperature in a reducing gas atmosphere resulted in the formation of polycrystalline BaTiO3 with no preferred crystallographic orientation. The dependence on the gas atmosphere indicates that it may be possible to tune the annealing time, temperature, and atmosphere to produce a single crystalline BTO on STO by SPE or produce a desired distribution of orientations.

Thin films of Er2O3 films were grown by atomic layer deposition using the Er precursor tris(1-(dimethylamino)-3,3-dimethylbut-1-en-2-olate)erbium(III) (Er(L1)3), with water as the co-reactant. Saturative, self-limited growth was observed at a substrate temperature of 200 °C for pulse lengths of ≥4.0 s for Er(L1)3 and ≥0.2 s for water. An ALD window was observed from 175 to 225 °C with a growth rate of about 0.25 Å per cycle. Er2O3 films grown at 200 °C on Si(100) and SiO2 substrates with a thickness of 33 nm had root mean square surface roughnesses of 1.75 and 0.75 nm, respectively. Grazing incidence X-ray diffraction patterns showed that the films were composed of polycrystalline Er2O3 at all deposition temperatures on Si(100) and SiO2 substrates. X-ray photoelectron spectroscopy revealed stoichiometric Er2O3, with carbon and nitrogen levels below the detection limits after argon ion sputtering to remove surface impurities. Transmission electron microscopy studies of Er2O3 film growth in nanoscale trenches (aspect ratio = 10) demonstrated conformal coverage.

We report gold electroplating on ultra-compliant substrates comprising helical slow wave structures (SWSs) for traveling wave tube amplifiers (TWTAs) [1]. The novel ultra-compliant substrates are composed of edge-tethered tri-layer metal ribbons with a helical geometry of microscale diameter. After electroplating with gold, we obtain overall thicknesses of a few um. We discuss different controllable electroplating conditions that influence thickness, uniformity, roughness, and related properties of deposited gold films on helical ribbons. In addition to increasing conductance of the electroplated helical ribbons, electroplating stabilizes the helix at its equilibrium diameter, with the pitch predicted by Prakash et al .[1]. Our method of fabrication of ultra-compliant helical ribbons starts with defining strips of width 5 µm to 10 µm by optical lithography, metal evaporation, and lift-off, deposited on Si substrates coated with a sacrificial layer of Ge or GeOx,. We use Cr/Au/Cr tri-layers to create an inherent stress gradient that causes the strip to self-assemble into a helix, after etching with XeF 2 for selective removal of a sacrificial layer. Diameter and pitch of the released helices are controlled by varying the thickness, the elastic modulus, the residual stress, and the in-plane geometry of the deposited tri-layer metal strips. The gold electroplating process uses a sulphate-based gold solution in a two-electrode electrochemical setup with the helix as the cathode and a platinized mesh as the anode [2]. We deposit gold to a thickness of a few um, using a pulsed current source with variable parameters. Direct current can also be used with smaller deposition times. Our results demonstrate the application of electroplating to unconventional ultra-compliant helix of nanoscale dimensions. Reference [1] Divya J. Prakash,., Matthew M. Dwyer, Marcos Martinez Argudo, Mengistie L. Debasu, Hassan Dibaji, Max G. Lagally, Daniel W. van der Weide, and Francesca Cavallo. 2020. “Self-Winding Helices as Slow-Wave Structures for Sub-Millimeter Traveling-Wave Tubes.” ACS Nano, 2021, 15, 1229-1239. doi:10.1021/acsnano.0c08296. [2] Max G. Lagally, Anjali Chaudhary, Daniel van der Weide, Divya J. Prakash, and Francesca Cavallo, Improved Self-assembly of Helices via Electrodeposition on Freestanding Nanoribbons for TWT Application, provisional US patent application (P220249US01) Work supported by U.S. AFOSR-Award No FA9550-22-1-0086.

Experiments and molecular dynamics (MD) simulations showthat crystallizationof amorphous Al2O3 via solid phase epitaxy (SPE)on a (0001), c-plane, & alpha;-Al2O3 substrateforms a metastable & gamma;-Al2O3 polymorph beforetransforming eventually to & alpha;-Al2O3. MDsimulations over a wide range of crystallization temperatures abovethe glass transition point T (g) show thatthe growth velocity of epitaxial & gamma;-Al2O3 follows the Wilson-Frenkel relation. The barriers associatedwith interfacial reorganization processes are minimal, indicatingthat mass transport to the amorphous-crystalline interfaceis the rate-limiting step over the entire temperature range for & gamma;-Al2O3 SPE. The mechanisms of transport depend on thetemperature and have a significant effect in determining the crystallizationvelocity. Above T (g), mass transport iscontrolled by bulk diffusion. Below T (g), the crystallization velocity is faster than predicted from theWilson-Frenkel relation in both the MD and experimental results.X-ray characterization shows that the growth of epitaxial & gamma;-Al2O3 follows an Arrhenius dependence on crystallizationtemperature from 700 to 800 & DEG;C with an apparent activation energyof 3.1 eV. Despite the fact that MD shows essentially no bulk diffusionat temperatures below T (g), SPE growth isnonetheless observed. Our simulations show that this persistent growthis the result of kinetic heterogeneity between bulk and interface,with epitaxial growth governed by enhanced diffusion near the amorphous-crystallineinterface. The rate of interfacial diffusion is computed using a hoppingrate based on the first passage time of atoms moving to neighboringcrystallization sites. The combination of conventional diffusion andinterfacial hopping modes of mass transport within the Wilson-Frenkelmodel provides an accurate estimate of the SPE growth velocity of & gamma;-Al2O3 both above and below T (g).

The simulated noise used to benchmark wavelet edge detection in this work was described incorrectly. The correct description is given here, and new results based on noise that matches the original description are provided. The results support our original conclusion, which is that wavelet edge detection outperforms thresholding in the presence of white noise and 1/fnoise.

The synthesis of graphene directly on Ge and on Ge deposited on Si provides a scalable route toward integrating graphene onto conventional semiconductors. Here, we elucidate the effect of Ge surface orientation on graphene island formation, strain in large-area graphene films, and nanofaceting of Ge below graphene by comparing the growth on Ge(001), Ge(011), Ge(111), Ge(112) (on which graphene growth has not been previously reported), Ge(001)-6 degrees, and Ge(001)-9 degrees via chemical vapor deposition. During the initial growth, islands ranging from compact hexagons and ovals to anisotropic ribbons are formed, depending on the Ge surface orientation. When the growth time and methane concentration are increased, the islands coalesce to form continuous films with low defect density on each substrate. Below graphene, the Ge surface is atomically flat on Ge(011) and Ge(111) but forms hill-and-valley nanofacets on the other surface orientations. We extract a partial phase diagram of the graphene-Ge interface and find that graphene modifies the Ge surface stability. Regardless of surface topography and orientation, graphene is compressively strained by 0.1-0.4%. Nanofaceting is suppressed when a fast growth rate is used; however, graphene also becomes more defective. These results provide insight into engineering mixed-dimensional heterostructures based on graphene and Ge for hybrid group-IV technologies.

Reconfiguration of amorphous complex oxides provides a readily controllable source of stress that can be leveraged in nanoscale assembly to access a broad range of 3D geometries and hybrid materials. An amorphous SrTiO3 layer on a Si:B/Si1- x Gex :B heterostructure is reconfigured at the atomic scale upon heating, exhibiting a change in volume of ≈2% and accompanying biaxial stress. The Si:B/Si1- x Gex :B bilayer is fabricated by molecular beam epitaxy, followed by sputter deposition of SrTiO3 at room temperature. The processes yield a hybrid oxide/semiconductor nanomembrane. Upon release from the substrate, the nanomembrane rolls up and has a curvature determined by the stress in the epitaxially grown Si:B/Si1- x Gex :B heterostructure. Heating to 600 °C leads to a decrease of the radius of curvature consistent with the development of a large compressive biaxial stress during the reconfiguration of SrTiO3 . The control of stresses via post-deposition processing provides a new route to the assembly of complex-oxide-based heterostructures in 3D geometry. The reconfiguration of metastable mechanical stressors enables i) synthesis of various types of strained superlattice structures that cannot be fabricated by direct growth and ii) technologies based on strain engineering of complex oxides via highly scalable lithographic processes and on large-area semiconductor substrates.

The crystallization of amorphous complex oxide layers from isolated seed crystals presents an opportunity to remove geometric constraints posed by thin-film epitaxial growth methods employing single-crystal substrates. The crystallization processes initiated by a distribution of isolated nanoscale seeds occur in a state of mechanical stress that is different from planar thin-film epitaxy. The effects of this stress were probed in the crystallization of the model perovskite oxide SrTiO3 nucleated by isolated nanoscale SrTiO3 seeds. Synchrotron nanobeam scattering and diffraction were used to probe the spatial distribution of crystalline and amorphous SrTiO3. Contributions to the diffraction patterns from these components were identified using non-negative matrix factorization. Individual SrTiO3 crystallites exhibit a lattice rotation resulting from the density difference between amorphous and crystalline SrTiO3. Stress at the crystal-amorphous interface advancing from the seeds produces a rotation of the crystal lattice at a rate of tens of degrees per micron of crystallization in the plane of the film. The rate of the lattice rotation provides insight into the crystallization mechanism. The lattice rotation indicates that nanoscale morphological control during solid-phase epitaxial crystallization from nanocrystal seeds can be achieved by manipulating the interface stress between the amorphous and crystalline phases to control dislocation dynamics.

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the “Wiggle Well”, whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 μ eV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices.

The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low-quality data is processed by an autonomous system. In this work, we propose a framework for robust autotuning of QD devices that combines a machine learning (ML) state classifier with a data quality control module. The data quality control module acts as a"gatekeeper"system, ensuring that only reliable data are processed by the state classifier. Lower data quality results in either device recalibration or termination. To train both ML systems, we enhance the QD simulation by incorporating synthetic noise typical of QD experiments. We confirm that the inclusion of synthetic noise in the training of the state classifier significantly improves the performance, resulting in an accuracy of 95.0(9) % when tested on experimental data. We then validate the functionality of the data quality control module by showing that the state classifier performance deteriorates with decreasing data quality, as expected. Our results establish a robust and flexible ML framework for autonomous tuning of noisy QD devices.

Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high-fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications.

The simulated noise used to benchmark wavelet edge detection in this work was described incorrectly. The correct description is given here, and new results based on noise that matches the original description are provided. The results support our original conclusion, which is that wavelet edge detection outperforms thresholding in the presence of white noise and 1/fnoise.

SrVO3 thin films with a high figure of merit for applications as transparent conductors were crystallized from amorphous layers using solid phase epitaxy (SPE). Epitaxial SrVO3 films crystallized on SrTiO3 using SPE exhibit a room temperature resistivity of 2.5 x 10-5 Ohms cm, a residual resistivity ratio of 3.8, and visible light transmission above 0.5 for a 60 nm-thick film. SrVO3 layers were deposited at room temperature using radio-frequency sputtering in an amorphous form and subsequently crystallized by heating in controlled gas environment. The lattice parameters and mosaic angular width of x-ray reflections from the crystallized films are consistent with partial relaxation of the strain resulting from the epitaxial mismatch between SrVO3 and SrTiO3. A reflection high-energy electron diffraction study of the kinetics of SPE indicates that crystallization occurs via the thermally activated propagation of the crystalline/amorphous interface, similar to SPE phenomena in other perovskite oxides. Thermodynamic calculations based on density functional theory predict the temperature and oxygen partial pressure conditions required to produce the SrVO3 phase and are consistent with the experiments. The separate control of deposition and crystallization conditions in SPE presents new possibilities for the crystallization of transparent conductors in complex geometries and over large areas.

We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays.