A technique to measure the decoherence time of optical phonons in a solid is presented. Phonons are excited with a pair of time delayed 80 fs, near infrared pulses via spontaneous, transient Raman scattering. The fringe visibility of the resulting Stokes pulse pair, as a function of time delay, is used to measure the phonon dephasing time. The method avoids the need to use either narrow band or few femtosecond pulses and is useful for low phonon excitations. The dephasing time of phonons created in bulk diamond is measured to be tau = 6.8ps (1.56cm-1).

A technique to measure the decoherence time of optical phonons in a solid is presented. Phonons are excited with a pair of time-delayed 80 fs near infrared pulses via spontaneous transient Raman scattering. The spectral fringe visibility of the resulting Raman pulse pair, as a function of time delay, is used to measure the phonon dephasing time. The method avoids the need to use either narrow band or few femtosecond pulses and is useful for low phonon excitations. The dephasing time of phonons created in bulk diamond is measured to be tau=6.8 ps (Delta nu=1.56 cm(-1)).

Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized, and decoherence due to the residual damage caused by the implantation process itself must be mitigated. To that end we have studied photoluminescence (PL) from NV-, NV0 and GR1 centers formed by ion implantation of 2 MeV He ions over a wide range of fluences. The sample was annealed at 600 degrees C to minimize residual vacancy diffusion, allowing for the concurrent analysis of PL from NV centers and irradiation induced vacancies (GR1). We find non-monotic PL, intensities with increasing ion fluence, monotonic increasing PL in NV0/NV- and GR1/(NV0 + NV1) ratios, and increasing inhomogencous broadening of the zero-phonon lines with increasing ion fluence. All these results shed important light on the optimal formation conditions for NV qubits. We apply our findings to an off-resonant photonic quantum memory scheme using vibronic sidebands. Crown Copyright (c) 2007 Published by Elsevier B.V All rights reserved.

We analyze a quantum optical memory based on the off-resonant Raman interaction of a single broadband photon, copropagating with a classical control pulse, with an atomic ensemble. The conditions under which the memory can perform optimally are found, by means of a `universal' mode decomposition. This enables the memory efficiency to be specified in terms of a single parameter, and the control field pulse shape to be determined via a simple nonlinear scaling. We apply the same decomposition to determine the optimal configurations for read-out.

Summary form only given. The authors present a theoretical analysis of a quantum memory which shows how to efficiently transfer an ultrashort single photon wavepacket to a long-lived collective excitation of an ensemble of absorbers with the well-known three level Lambda-structure, by application of an ancillary control field. We describe a general prescription for optimizing the efficiency of the storage process for arbitrary detunings, and then we show how the dynamics simplify in the off-resonant limit. In this case spontaneous emission losses are eliminated and the interaction becomes unitary; being characterized by a universal mode decomposition.

We introduce a figure of merit for a quantum memory which measures the preservation of entanglement between a qubit stored in and retrieved from the memory and an auxiliary qubit. We consider a general quantum memory system consisting of a medium of two level absorbers, with the qubit to be stored encoded in a single photon. We derive an analytic expression for our figure of merit taking into account Gaussian fluctuations in the Hamiltonian parameters, which, for example, model inhomogeneous broadening and storage time dephasing. Finally we specialize to the case of an atomic quantum memory where fluctuations arise predominantly from Doppler broadening and motional dephasing.

A technique to measure the decoherence time of optical phonons in a solid is presented. Phonons are excited with a pair of time delayed 80 fs, near infrared pulses via spontaneous, transient Raman scattering. The fringe visibility of the resulting Stokes pulse pair, as a function of time delay, is used to measure the phonon dephasing time. The method avoids the need to use either narrow band or few femtosecond pulses and is useful for low phonon excitations. The dephasing time of phonons created in bulk diamond is measured to be � =6.8 ps (�� = 1.56 cm−1).