This study investigates the impact of deposition angle on the structural and optical properties of Au-doped SnO2 thin films synthesized via DC sputtering combined with GLancing Angle Deposition (GLAD). Thin films were deposited at particle flux angles of 0 degrees (planar), 40 degrees, 60 degrees, and 80 degrees (oblique). X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of SnO2 and the successful incorporation of gold as a metallic nanocrystalline phase. The results revealed that GLAD significantly influences the film microstructure, altering crystallite size and preferred orientation. Optical measurements showed a progressive decrease in transparency with increasing deposition angle, with transmittance at 550 nm decreasing from 48 % (planar) to 30 % (80 degrees), primarily due to enhanced light scattering from the nanostructured, porous morphology induced by GLAD. Interestingly, a slight reduction in absorbance at 550 nm was also observed in obliquely deposited films. The incorporation of gold as a dopant introduced localized surface plasmon resonance (LSPR) effects, significantly enhancing light absorption and scattering near the plasmonic peak. Notably, the LSPR peak position was tunable from approximately 550 nm-680 nm, depending on the GLancing angle during deposition. Despite notable structural and optical changes, the optical band gap remained relatively stable, ranging from 3.88 to 3.95 eV across all samples. Overall, this work highlights the synergistic effect of GLAD and gold doping in accurately tuning the plasmonic and microstructural characteristics of SnO2 thin films, making them promising candidates for a broad range of optoelectronic applications, including photodetectors, solar cells, and chemical or biological sensors.

This study investigates the influence of the Hubbard correction on the electronic and magnetic properties of SrRuO _3 doped with vanadium (V) and cadmium (Cd), using a range of U parameter values within the GGA+U framework. Our results reveal that most doped configurations exhibit half-metallic behavior, highlighting their potential for spin-polarized transport. However, specific U combinations, namely ( U_Ru=4.5,U_V=1.2, or 2.7 eV) and ( U_Ru=4.5,U_Cd=1.2 ) eV, induce a transition to a magnetic semiconducting state. In contrast, configurations such as ( U_Ru=1.4,U_Cd=1.2,2.1,4 or 4.9 eV) and the undoped limit ( U_Ru=0,U_V,U_Cd=0 ) exhibit metallic character. The inclusion of the Hubbard U notably enhances magnetic moments compared to standard GGA calculations, with the magnitude of magnetization increasing alongside the U value. Importantly, the estimated Curie temperatures for several configurations are near or above room temperature, underlining the potential of these doped SrRuO _3 systems for application in next-generation spintronic devices.

This article presents a physics-informed deep learning (DL) framework for the modeling and optimization of submicron junctionless infrared phototransistors (JLPs). By integrating TCAD-based simulations with DL classification and feature importance analysis, the study identifies key parameters that govern device figures of merit (FoMs) such as I on , I off , I on /I off ratio, and responsivity. Results highlight the critical influence of doping and structural variations on phototransistor performance and demonstrate the utility of DL in guiding low-cost, high-efficiency device design for optical communication systems. Beyond performance prediction, the proposed approach provides valuable design guidelines that capture complex parameter interactions and improve device reliability. This work highlights the potential of physics-informed DL as a strategic tool to accelerate the development of scalable, energy-efficient phototransistors for next-generation low cost CMOS-based optoelectronic applications.

Achieving high efficiency in CZTSSe solar cells requires precise control over both structural and compositional parameters. This work aims to develop a predictive, data-driven design strategy for high-performance and eco-friendly CZTSSe solar cells by optimizing plasmonic and compositional features using deep learning and numerical simulation techniques. We present a comprehensive numerical and deep learning–driven investigation of key design features, including absorber layer thickness, charge transport layer properties, front-contact configuration, embedded gold nanoparticles (Au-NPs), and a tuned S/(S + Se) ratio, which is directly linked to bandgap tuning and electron affinity shifts within the CZTSSe absorber. By combining finite-difference time-domain (FDTD) simulations, the SCAPS-1D tool, and deep learning techniques, we systematically evaluate the role of each parameter in influencing the photovoltaic figures of merit (FoMs). Furthermore, we employ deep learning–enhanced FDTD analysis to explore the synergistic effects of Au-NP size, key design parameters, and S/(S + Se) ratio values on optical absorption and charge extraction performances. The results demonstrate that the integration of Au nanoparticles with optimized bandgap tuning significantly enhances light absorption and charge transport, resulting in an overall power conversion efficiency (PCE) exceeding 23

In this paper, a new ion selective tunneling field effect transistor (IS TFET) based on double gate (DG) aspect and SiSn-Si-Si heterojunction channel is proposed. The device is numerically modeled based on band-to-band tunneling model (BTBT) using ATLAS 2-D simulator. The effect of SiSn alloy as a source region in DG TFET platform on the pH sensor performance is investigated. It is found that the use of 40

Single‐gate metal‐oxide‐semiconductor field‐effect transistors (MOSFET) suffer from several basic physical and electrical limitations for further scaling in deep nanoscale domains, which are often known as short‐channel and reliability effects. The junctionless (JL) gate‐all‐around (GAA) MOSFET design is claimed to provide superior performance and scalability properties as well as reduced elaboration cost in comparison to that of double‐gate and Fin‐FETs. However, further improvements regarding the subthreshold slope (SS) and power consumption should be carried out to better minimize the problem of commutation speed and power dissipation of the nanoscale device. In this context, this work aims at investigating the performance of ferroelectric (FE) JLGAA MOSFET including the impact of the FE material variability on the subthreshold performances, such as subthreshold slope and threshold voltage ( V th ). In this framework, the transistor subthreshold properties will be analytically modeled, where accurate models of subthreshold current, SS and V th will also be derived and validated by technology computer‐aided design (TCAD)‐based numerical simulations. The investigated device is implemented to investigate the performance of a nanoelectronic inverter gate in the subthreshold regime. The proposed investigation can open new paths for developing efficient field effect transistor (FET)‐based low‐power nanoelectronic digital circuits.

We present a new subthreshold analytical model for dual-material junctionless gate-all-around negative capacitance field-effect transistors (DM JL GAA NCFETs). The model accurately reproduces the electrostatic potential distribution, subthreshold current characteristics of the device, threshold voltage, and subthreshold slope. By solving the Landau–Khalatnikov (L–K) equation with Poisson’s equation, the model provides a precise analytical solution that aligns closely with numerical results. The impact of various parameters such as channel length, DM gate ratio, and ferroelectric layer thickness on the device subthreshold behavior is systematically analyzed. It is found that the strategic combination between the JL structure and NC effect can allow achieving enhanced device performance at the nanoscale level. The results demonstrate that the optimized DM JL GAA NCFET exhibits enhanced short-channel performance at nanoscale level, reduced subthreshold swing of 49 mV/dec, lower threshold voltage of 0.20 V, and reduced OFF-current of 1.5 × 10–5 nA. Therefore, the proposed design framework strategy paves the way for designers not only to identify the appropriate DM gate configuration and the suitable ferroelectric material for the development of ultralow-power and high-performance nanoelectronic circuits.

With the continuous downscaling of analog CMOS-based circuits, the sensitivity of nanoelectronic devices to design parameter variations has significantly increased. In this paper, we introduce a novel design approach that combines numerical simulations with Machine Learning (ML) analysis to explore the key design parameters of ultra-low scale Junctionless Gate-All-Around (JL GAA) Field-Effect Transistors (FETs). Accurate 3D numerical models that incorporate quantum effects and ballistic transport are employed to simulate the I-V characteristics of 10 nm JL GAA FET devices. The influence of variations in device geometry and doping concentration on analog Figures-of-Merit (FoMs), such as intrinsic gain (Av) and cut-off frequency, is thoroughly analyzed. The use of high-k dielectric materials is also explored for improving the frequency response in high-speed analog circuits. By leveraging ML techniques, the study identifies the optimal design parameters that enhance key analog performance metrics, enabling efficient prediction and optimization of device behavior. Our results highlight the importance of channel radius and channel doping in enhancing the intrinsic gain and frequency response in analog devices. Moreover, the investigated JL GAA FETs exhibit high intrinsic gain and frequency performances, making them ideal candidates for high-speed and high-gain analog circuits. The integration of machine learning techniques further streamlines the optimization process, leading to the identification of optimal parameters that maximize analog performance of the device.

This study investigated a new ultraviolet UV phototransistor structure employing SnO 2 thin-film and plasmonic Ag nanoparticles (NPs). The main objective is to enhance the photogeneration capability in the active layer to achieve enhanced responsibility. Numerical model is developed for the device under examination and the photoresponse characteristics of the device are extracted. Utilizing a 3-D FDTD approach, the optical properties of SnO 2 thin-film coated with Ag NPs are explored, revealing enhanced UV-absorbance capabilities attributed to localized surface plasmon resonance effects (LSPR). The effect of the NPs radius and spacing on the device performance is also analyzed. It is revealed that the proposed device can enhance the device UV photodetection properties offering a high current ratio of 90 dB. This innovative approach using cost-effective SnO 2 active layer decorated with Ag NPs, significantly improves absorption capability of UV laght, offering a promising avenue for the development of alternative phototransistors for optical wireless communication systems (OWCS).

In this work, a new infrared (IR) phototransistor (PT) structure employing thin-film-transistor (TFT) building block and GeSn sensitive layer with Gaussian doping profile (GDP) is proposed. Accurate numerical models based on Silvaco software are developed. The impact of an engineered doping on the performance of the analyzed TFT PT based on GeSn sensitive layer (SL) is investigated. It is found that the the use GD profile can allow achieving enhanced photoresponse characteristics, while maintaining reduced noise effects. This is attributed to enhanced carrier transfer due to the generation of an electric field across the GeSn SL, facilitating carrier injection to the TFT platform. The GD profile is optimized and the associated device performances are compared with recent works, where higher current ratio, improved detectivity and superior responsivity are achieved. This innovative approach using GD profile, significantly enhances the device performances, offering a promising avenue for the development of alternative PTs for optical wireless communication systems (OWCS).

The present study aims at investigating the impact of bimetal Ni-Cu intermediate layer on the performances of thin-film AZO-based structure, as alternative reliable broadband optical sensor. In this regard, this paper provides an in-depth experimental analysis of the Optoelectrical properties of AZO-Ni-Cu-AZO structures deposited on glass substrates for broadband (UV-Vis-NIR) photosensing applications. Employing RF Sputtering for the deposition process, we investigate the integration of Nickel (Ni) to enhance the reliability properties, particularly thermal and electromagnetic radiation effects, within the Aluminum Zinc Oxide (AZO) matrix. Moreover, the prepared structure (AZO-Ni-AZO) is re-engineered by introducing an ultrathin Copper (Cu) layer, in order to enhance the electrical properties and flexibility behavior of the sensor. The investigated AZO-Ni-Cu-AZO structure exhibits improved photodetectivity, which makes it as an alternative for developing advanced optoelectronic devices for reliable, flexible and low-cost thin-film technology.

In this paper, we introduce an innovative design approach centered on optimized source/channel/drain structure using Silicon-Tin (SiSn) binary alloys to enhance the Subthreshold Swing (SS) factor of nanoscale ultra-thin film Double Gate (DG) Tunnel-FET design. In this context, accurate numerical models taking into account tunneling effects and quantum transport are developed. The influence of the Sn mole fraction on the device's switching characteristics and resulting current capability is thoroughly examined. Additionally, the influence of high-k dielectric materials on device performance is analyzed. The optimized SiSn DG TFET device demonstrates a very low Subthreshold Swing factor of 25.5 mV/dec, while maintaining a reduced ambipolar behavior. Therefore, the proposed design framework strategy paves not only to identify the appropriate binary alloys associated with the optimized mole fraction values, but also to develop efficient ultra-low power multigate transistors.

We report on, for the first time, a combined density functional theory and Boltzmann-semiclassical calculations of two-dimensional stanene half-passivated with X=H, F, Cl, Br and I The thermodynamical stability is examined through the comparison of the formation energy as well as the analysis of the phonon dispersion spectrum indicating a possible experimental fabrication of these stanene derivatives. Interestingly, using generalized gradient approximation (GGA), the obtained results show that half-iodination and half-hydrogenation induce a half metallic ferromagnetic character and the magnetic moment on the unsaturated Sn atoms are 0.41μB and 0.38μB for SnSn–H and SnSn–I respectively, whereas half-decoration with fluorine, chlorine and bromine adsorbates, characterized with high electronegativity, gives rise to antiferromagnetic metallic systems. Except SnSn–I, the critical temperatures of the stanene derivatives are above room temperature. These results suggest that magnetism of stanene can be tuned by different passivation atoms. The transport properties, which result in a thermoelectric figure of merit (ZT), are very sensitive to the doping type however, less affected by the temperature variation. The highest ZT value of 0.99 is recorded for the SnSn–H conformer, while it decreases with the increase of the electronegativity. For the four compounds, the maximum figure of merit and seebeck coefficients are located at n-type doping, suggesting that these materials can be strong candidates among n-type materials for thermoelectric applications in high-temperature regions. Our findings demonstrate that half passivation with X-atoms is a feasible method to tune the properties of stanene for spin injection applications and thermoelectric cooling industry.

This article provides an in-depth analysis of the optical and electrical characteristics of a multilayer film consisting of AZO-Cu-AZO, which was formed using RF magnetron sputtering. The film has a thickness of 40 nm for both AZO layers and 10 nm for the middle Cu ultra-thin film. The optical characterization shows that the material has a wide range of wavelengths that it can transmit, from 442 nm to 778 nm. This range covers most of the visible and near-infrared spectrum. The material has a peak transmittance of around 70%, which suggests that it could be used as a transparent coating for optoelectronic applications. Hall effect characterization reveals a significant abundance of charge carriers of the n-type, with a concentration of 10 21 cm -3 and a good recorded electron mobility. The results indicate that the AZO-Cu-AZO layer exhibits a high level of electrical conductivity while also preserving a good optical transparency. Moreover, the economic benefits and mechanical flexibility of this structure indicate its potential use in flexible portable electronic devices and other applications. The results emphasize the significance of improving deposition methods in order to get the highest possible material performance for optoelectronic applications.

In this work, we propose a novel design framework based on combined finite-difference time-domain (FDTD) simulations and machine learning (ML) analysis, aiming to improve the light trapping and carrier transport management in the SnS-based thin-film solar cells (TFSCs). The present study aims to identify the key governing solar cell parameters throughout the structure designing processes in order to apply them to develop efficient eco-friendly SnS TFSCs. In this regard, a new SnS solar cell structure based on alternative electron transport layers (ETLs) combined with plasmonic-based light management approach is proposed. Extensive ML-FDTD analysis is performed to assess the influence of the gold nanoparticles (Au-NPs) distribution and carrier transport layers on the TFSC performance. It is revealed that the proposed design framework can predict the best radius and spatial distribution of Au-NPs and the appropriate ETL. This is attributed to the use of ML approach, allowing the selection of the Au-NPs configuration for enhanced light trapping and carrier transport management. Moreover, the numerical simulated current and voltage values show a consistency with the ML-FDTD predictions. Through ML-FDTD analysis, SnS 2 material is found to be the best ETL, while radius and spatial distribution of Au-NPs are other key governing parameters to attain over 12% efficiency. The optimized device shows enhanced open circuit voltage of 0.63 V and improved short circuit current of 27 mA/cm 2 . The obtained results can open new paths in predicting new efficient TFSC structures for eco-friendly photovoltaic applications.

Perovskite-based tandem solar cells emerged as potential candidates for efficient photovoltaic applications. These devices exhibit high optical absorption properties and tunable direct band-gap. In this work, a novel lead-free Perovskite-SnS Tandem solar cell based on alternative charge transport layers combined with plasmonic-based light management approach is proposed. Accurate numerical investigation is carried out to assess the influence of the charge transport layers of top sub-cell on the optoelectronic properties of the tandem cell. The obtained results reveal the potential of SnO2 and CuO materials as electron and hole transport layers, respectively, demonstrating a good conduction band offset (CBO) and thereby enhanced recombination losses. Furthermore, the role of Gold-nanoparticles in enhancing absorption and light-trapping mechanisms in the bottom SnS-based sub-cell is investigated using FDTD computations. It is found that the optimized tandem cell with Au-NPs exhibits a high power conversion efficiency of 20.1%. Therefore, this work can open up new paths to boost the power conversion of Sn-based Perovskite/SnS Tandem cells for high-performance and eco-friendly photovoltaic applications.

The present study aims at investigating the impact of the ferroelectric materials and channel lengths on the subthreshold swing factor of nanoscale Negative Capacitance Junctionless Gate All Around NCJGAA- MOSFETs. In this regard, analytical modeling of surface potential and subthreshold swing, including short channel and ferroelectric material effects, is performed. The surface potential subthreshold swing models are analytically developed by solving the Poisson’s equation in cylindrical coordinates in the channel region, including the negative capacitance and ferroelectric material effects on the device performance. The subthreshold swing (SS) variation is presented as function of different ferroelectric materials and variable channel length (L), in order to study the scaling capability of the proposed device. The obtained analytical results are in good agreement with numerical simulations. A minimum SS of $52 \mathrm{mV} /$ decade is recorded for $\mathrm{L}=30 \mathrm{~nm}$ using the doped-hafnium oxide as ferroelectric material, making it ideal for usage in low-power and digital nanoelectronic applications.

In this work, optical and electrical properties of tin-oxide (SnOx) thin-films were investigated for broadband photosensing and photovoltaic applications. The GLancing Angle Deposition (GLAD) and Reactive Gas Pulsing Process (RGPP) techniques were used to study the effects of the oxygen ratio variation and deposition angle on the film optoelectronic and photovoltaic properties. The deposition angle of the particle flux was kept at 80 degrees and the injected oxygen gas concentration was tuned by changing the oxygen pulsing time from 0 to 20 s. It is found that the material band gap increases from 0.9 eV to 3.56 eV when the oxygen content increases. The deposited SnOx films exhibited improved and tuned optoelectronic properties, demonstrating their potential applications for developing alternative broadband photosensing layers and eco-friendly all-oxide solar cells. In this regard, SnOx-based photosensor and all-oxide SnOx solar cell structures were developed using the deposited thin-films. It is revealed that the prepared SnOx photosensor shows the highest responsivity of 32.7 mA/W and improved I-ON/I-OFF ratio of 48 dB. Moreover, the optimized all-oxide SnOx solar cell demonstrates a high efficiency of 3.41 %, a short-circuit current of 14.53 mA/cm(2) and an open circuit voltage of 0.49 V. These interesting results make the proposed elaboration process based on combined RGPP and GLAD techniques highly suitable for the development of high-performance optoelectronic and photovoltaic devices based on cost-effective metal oxide materials.

In this work, a novel 4H-SiC junctionless power MOSFET is investigated through a circuit level analysis using Atlas mixed mode module in order to assess its performances for power electronics applications. More specifically, the device switching performances are analyzed in a circuitry related to an inductive load. Moreover, double pulse testing (DPS) is performed to show the improved device switching losses, and the self-heating effect on the drain current of both the proposed device and its conventional counterpart is assessed. Our findings show that the proposed device rise time is enhanced by 33 %, and its switching losses are reduced by 29 % compared to its conventional counterpart, which reduces the self-heating effect due to switching losses. Furthermore, it has been shown that the proposed device exhibits a lower reduction in its drain current due to self-heating, namely 25 %, compared to 35 % reduction in the drain current of its conventional counterpart, which reduces the self-heating effect due to conduction losses by on-resistance increase. Most importantly, the proposed junctionless power MOSFET is characterized by a low fabrication cost. Thus, we consider that it has the potential for the advancement of more cost-effective thermal solutions for power electronics applications.

Our approach in this paper aims at investigating the impact of combining high-k dielectric materials with ferroelectric materials on the performance of silicon-germanium (SiGe) Junctionless Gate-All-Around (GAA) Field-Effect Transistors (SiGe-High-k-NCJLGAA-FETs). This offers unique advantage and can lead to a significant improvement in the device performance. The combination of high-k dielectrics and ferroelectric materials enhances the device electrical properties by providing enhanced channel electrostatic behavior. The electrical performance of the considered device (SiGe-High-k-NCJLGAA-FETs) is investigated by developing combined analytical and numerical models using ATLAS 2D simulator. The surface potential and subthreshold swing models, including short channel are developed by solving the Landau-Khalatnikov (L-K) equation with Poisson's equation. The effect of the Ge mole fraction on the device electrical performance is investigated. In addition, the influence of various high-k dielectric materials on the device performance is analyzed. A minimum swing factor (SS) of 31.2 mV/decade is recorded for L=30 nm using the doped-hafnium oxide as ferroelectric material and SiGe channel with TiO 2 gate oxide. These enhancements make the optimized transistor device highly approriate for usage in low-power and digital nanoelectronic applications.