We theoretically investigate quantum transport in a T-shaped nanodevice consisting of a quantum dot side-coupled to a finite zigzag chain deposited on a proximitized superconducting substrate. Using the non-equilibrium Green’s function formalism within the Keldysh framework, we show that Majorana bound states generate a robust parity-independent zero-bias conductance signature that remains preserved for chain lengths ranging from (n = 3) to (n = 8). The current–voltage characteristics exhibit multiple finite-bias plateaus and distinct transport regimes arising from the interplay between Majorana-induced and conventional fermionic states. By tuning the quantum dot–chain coupling, superconducting pairing amplitude, and electrode hybridization strength, the transport response can be effectively modulated, establishing the operational framework of a Majorana field-effect transistor. These findings clarify the role of finite-size effects and quantum interference in topological hybrid systems and are relevant to emerging semiconductor–superconductor and optical lattice platforms for Majorana physics. These results demonstrate the robustness of Majorana signatures in finite zigzag chains and highlight the potential of this architecture for the implementation of Majorana field-effect transistor devices.
Micro/nano field-emission electronics feature high interference immunity and frequency performance beyond solid-state carrier mobility limits, showing promise for terahertz applications. However, the electrons emitted from such devices not only cause crosstalk with adjacent circuits but also necessitate independent packaging to maintain the internal high-vacuum environment, which poses a major bottleneck for heterogeneous integration. The introduction of vacuum microcavities can provide stable electron transport channels and achieve electrical isolation on-chip, thereby eliminating the need for bulky standalone packaging. To investigate the morphological evolution of thin films during the microcavity sealing process, this study develops a coupled molecular flow and phase transition simulation method. Using the angle coefficient method to solve the number density coupled phase-field equations, we capture the topological evolution of films deposited under large-angle oblique incidence within a sealed microcavity and further predict film morphology and coverage uniformity under various deposition angles.
In dye-sensitized solar cells, the thickness of the photoanode has an influence on both the optical absorption and the dye-accessible surface area, as well as on the electron-transport distance and recombination. The work in this study builds upon a physics-informed neural model for thickness-dependent electron transport and photovoltaic performance for 6 compressed titanium dioxide (TiO2) photoanodes reported in the literature. The electron state in space is described by a parameterized random-feature neural field, under the steady-state diffusion-generation-recombination equation and proper extraction and zero-flux boundary conditions. As a result of the small size of the dataset, the electron diffusion coefficient, electron lifetime, absorption coefficient, and photon flux are assumed to be fixed effective modeling parameters to avoid non-identifiable inverse parameters. Low-capacity regularized correction maps the differential-equation response of the contact current into the short-circuit current density of the device and auxiliary relationships are regularized to represent open-circuit voltage and fill factor. The neural field showed good agreement with the analytical solution of constant coefficients with L2 relative error of 0.084–0.685
A coupled one-dimensional computational framework is developed for Si-lattice-matched GaAs _1-x-y N _x P _y homojunction solar cells under indoor illumination. The framework integrates a band-anticrossing description of the composition-dependent bandgap, measured optical constants, finite-element minority-carrier transport, bulk and depletion-region recombination, surface recombination, antireflection losses, and non-ideal terminal resistances. Mesh convergence, carrier conservation, low-injection validity, and transfer of the formulation to published indoor GaInP measurements are examined before predictions are made for GaAsNP. For six lattice-matched compositions, the preferred nitrogen fraction depends on both spectral power distribution and illuminance. At 1000 lx it ranges from 2.5 μ W cm ^-2 maximum-power density. Material-quality scenarios span 21.31-−33.35
Accurate and efficient extraction of per-unit-length capacitance matrices is essential for the modeling of multiconductor transmission lines (MTLs), particularly for nonuniform structures where the cross-sectional geometry varies along the transmission path. Conventional analytical formulas are computationally efficient but usually rely on simplified assumptions, such as sufficiently large conductor spacing, which may lead to inaccurate results. On the other hand, full-domain numerical methods generally require extensive volumetric discretization and become computationally expensive when repeated cross-sectional evaluations are required. To address these challenges, this paper develops an efficient boundary-based electrostatic extraction framework in computational electromagnetics for the per-unit-length capacitance matrix of MTLs. The proposed framework formulates the electrostatic problem using a scalar potential integral equation, in which only the conductor boundaries are discretized. The surface charge distribution is obtained using a pulse-basis, point-matching Method of Moments (MoM) scheme, and the capacitance matrix is directly extracted from the charge-potential relationship. Unlike conventional approaches, the proposed framework does not rely on the wide-spacing assumption and can accurately capture the electrostatic coupling among closely spaced conductors. The proposed method is validated using a representative bounded wave simulator (BWS). The extracted matrices show excellent agreement with Ansys simulations along the entire structure. Furthermore, compared with FEM-based extraction, the proposed method achieves significantly improved computational efficiency by avoiding volumetric meshing of the surrounding dielectric region. The proposed framework provides an accurate and efficient solution for repeated per-unit-length capacitance matrix extraction of practical nonuniform MTL structures.
