The development of all-inorganic antimony (Sb)-based perovskite-inspired solar cells (PISCs) has garnered significant interest owing to their superior stability and non-toxic nature. Nevertheless, the fabrication of high-quality all-inorganic Sb-based perovskite-inspired thin films remains a significant obstacle. Herein, all-inorganic Cs3Sb2I9-xClx thin films were synthesized by adjusting the annealing time in ambient air. As the annealing time increases from 6 to 10 min, the number of holes in Cs3Sb2I9-xClx thin film reduces. Simultaneously, its defect density decreases. However, with a further extension of the annealing time to 14 min, the number of holes for Cs3Sb2I9-xClx thin film increases and its defect density improves. Consequently, the Cs3Sb2I9-xClx thin film with annealing 10 min exhibits the best growth quality.

Wide band gap CsPbBr3 perovskite solar cells are becoming one of the ideal candidates for top cells in tandem solar cells. Nevertheless, the defects in CsPbBr3 film prepared by solution deposition method restrict the optoelectronic performance of perovskite solar cells. To solve this problem, a strategy of doping a trace amount of PbI2 into CsPbBr3 film synthesized by solution deposition is adopted, effectively increasing the average grain size of CsPbBr3 film, decreasing its optical band gap, number of surface grain boundary defects and carrier recombination probability. Simultaneously, the PbI2-doped CsPbBr3 perovskite solar cells have been successfully prepared. The best conversion efficiency of the CsPbBr3 cells with doping PbI2 is 6.46 %, which is higher than the efficiency of the undoped CsPbBr3 devices (5.00 %). This study offers a method for manufacturing highly efficient all-inorganic perovskite solar cells.

All-inorganic CsPbIBr(2 )perovskite thin films were fabricated via a solution process. The morphological and structural properties of CsPbIBr2 perovskite thin films prepared under different spin-coating parameters are systematically investigated using SEM, XRD, XPS and EDS. The CsPbIBr2 thin film with 2000 rpm and 120 s exhibits the good crystallinity and large average grain size. Consequently, the optimal rotation speed and time under the experimental conditions are determined to be 2000 rpm and 120 s, respectively. This work provides a novel approach for preparing high-quality CsPbIBr2 perovskite thin films.

High-quality MAPbBr3 microplates with controlled (100) orientation were fabricated via antisolvent diffusion method. Real-time growth observation revealed the nucleation and crystallization dynamics. Fluorescence lifetime imaging microscopy (FLIM) uncovered spatial heterogeneity in carrier recombination, with lifetimes ranging from 3 to 6 ns across individual microplates. Photodetectors based on these microplates exhibited a high on/off ratio and intensity-dependent photoresponse. The nonlinear photocurrent increases with light intensity indicated carrier transport limitations at high excitation densities. This study advances the understanding of perovskite microplate photophysics and demonstrates their potential for high-performance optoelectronics.

All-inorganic CsPbBr3 perovskite solar cells have attracted widespread attention due to their excellent stability. However, the poor crystal quality and large optical bandgap of CsPbBr3 perovskite films limit the efficiency improvement of solar cells. Here, CsPbBr3 perovskite films and corresponding solar cells are prepared by solution method. The effect of different annealing temperature on the performance of CsPbBr3 perovskite films and corresponding solar cells is studied. The results show that compared with CsPbBr3 solar cells annealed at 200 degrees C and 300 degrees C, CsPbBr3 solar cells annealed at 250 degrees C have higher efficiency (1.74%). The reason behind the efficiency improvement for CsPbBr3 device is that CsPbBr3 films with 250 degrees C annealing temperatures have better crystallinity and smaller optical band gap (2.344eV).

Cocrystal engineering offers a promising strategy to synthesize materials with novel physicochemical properties by integrating electron-rich donors and electron-deficient acceptors through non-covalent interactions. This work focuses on the preparation and characterization of naphthalene/1,2,4,5-tetracyanobenzene (TCNB) chargetransfer cocrystal using a controlled slow solvent evaporation method. Millimeter-scale cocrystals with preferential growth along the (110) plane were synthesized by mixing equimolar acetonitrile solutions of naphthalene and TCNB. Temperature-dependent photoluminescence (PL) studies demonstrated a significant redshift in emission peaks and a broadening of the full width at half maximum (FWHM) from 122 nm to 173 nm, attributed to enhanced electron-phonon coupling and thermal quenching. An exciton binding energy of 142 meV was derived, supporting efficient radiative recombination. Power-dependent PL spectra revealed exciton annihilation effects under high excitation intensity, suppressing short-wavelength emission. The relatively uniform fluorescence lifetime across the sample was observed in time-resolved fluorescence lifetime imaging (FLIM) image. Two decay components were assigned to localized exciton (14.4 ns) and charge transfer exciton (40.3 ns) recombination. These results highlight the tunable optoelectronic properties of naphthalene/TCNB cocrystals and their potential for applications in light-emitting devices and photonic systems.

The all-inorganic CsPbBr3 perovskite film has attracted widespread attention from the academic community due to its excellent air and thermal stability. However, the grain growth of CsPbBr3 perovskite film is uneven. Here, high-quality CsPbBr3 perovskite film was successfully prepared by adjusting the rotational speed. When the rotational speed increases from 1000rpm to 2000rpm, CsPbBr3 perovskite film exhibits higher crystallinity, better uniformity, larger average grain size (583nm), and smaller optical band gap (2.341eV). As the rotational speed further increases to 3000rpm, the crystallinity and uniformity of CsPbBr3 perovskite film deteriorate and its average grain size decreases and its optical band gap increases. Therefore, the optimal rotational speed is 2000rpm under the condition of this experiment.

All-inorganic CsPbBr3 perovskite solar cells have attracted increasing attention due to their long-term stability. Here, all-inorganic CsPbBr3 perovskites are doped with BaBr2 to improve the efficiency of perovskite solar cells. The CsPbBr3 perovskite film displays better crystallinity, higher valence band maximum (VBM) position and lower carrier recombination probability after introducing BaBr2. Hence, the electron-hole transport layer-free device with the presence of BaBr2 achieves the improvement of the efficiency and stability. In particular, the efficiency of the device enhances from 1.88% to 2.86% by optimizing the doping concentration of BaBr2. In addition, the BaBr2-doped device without encapsulation exhibits excellent performance in air with relative humidity of similar to 80%.

The all-inorganic CsPbBr3 perovskite solar cell without electron-hole transport layer has attracted widespread attention from researchers due to its simplified process, reduced costs and excellent air stability. However, its photoelectric conversion efficiency is currently relatively low. Here, the CsPbBr3 perovskite thin film with doping MgBr2 is used as a novel absorber for all-inorganic carbon-based perovskite solar cell. There is no significant change in the optical band gap of CsPbBr(3 )after the incorporation of MgBr2. However, doping MgBr2 can effectively enhance the crystallinity of CsPbBr3 thin film and improve carrier separation capability of CsPbBr3 perovskite cell. Compared with the CsPbBr3 perovskite cell without doping MgBr2, the efficiency of the CsPbBr3 perovskite cell with doping MgBr2 increases from 1.79% to 2.30%. This work provides a novel pathway for preparing highly-efficient CsPbBr3 perovskite solar cell.

All-inorganic perovskite CsPbBr3 has gained widespread attention for photovoltaic application due to its preeminent stability. However, the conversion efficiency of CsPbBr3 solar cell is relatively low. Herein, a novel doping strategy has been employed in CsPbBr3 solar cell, which generates multiple benefits to enhance the cell performance. After doping CaBr2, carbon-based CsPbBr3 solar cell achieves a higher efficiency of 2.48%. The mechanism behind the efficiency improvement is that CaBr2-doped CsPbBr3 films have higher crystallinity, smaller optical band gap, and lower carrier recombination probability. This work opens up a simple and efficient method for enhancing the photovoltaic performance of all-inorganic perovskite solar cell.

All-inorganic CsPbI2Br perovskite solar cells (PSCs) exhibit exceptional thermal stability but suffer from intrinsic defects and lattice strain-induced phase instability. Here, we pioneer the integration of molybdenum ditelluride quantum dots (MoTe2 QDs) into CsPbI2Br PSCs, obtaining an excellent power conversion efficiency (PCE) of 14.4 % for carbon-electrode-based devices. The multifunctional roles of MoTe2 QDs are systematically elucidated: (1) As nucleation seeds, they promote epitaxial growth of perovskite grains, enlarging grain size; (2) Nanoheterojunctions formed at MoTe2/CsPbI2Br interfaces enhance charge separation and transport; (3) By controlling the amount of MoTe2 QDs additives to introduce compressive stresses to counteract the tensile stresses caused by the uneven expansion of different interfacial layers, thus releasing the residual stresses. The optimized device retains 84 % of its initial PCE under 120 h of continuous illumination and demonstrates superior ambient stability (60 days). This work establishes a new idea for the use of transition metal disulfide QDs to improve the efficiency of all-inorganic PSCs and eliminate residual stresses.

Antimony-based perovskite-inspired materials (Sb-PIMs) are promising lead-free candidates for indoor photovoltaic application. Cs3Sb2I9, in particular, with a ≈2.0 eV bandgap, is ideal for harvesting indoor white light. However, solution-processed Sb-PIMs preferentially crystallize into thermodynamically stable 0D structures, leading to strong self-trapped exciton (STE) formation, limiting device performance. Although chloride (Cl) doping can induce 2D structural transitions, it enhances Fröhlich electron-phonon coupling (EPC), creating an intrinsic trade-off. Here, we develop an anion-exchange strategy to fabricate phase-pure, Cl-free 2D Cs3Sb2I9 films that suppress STE formation while enabling controlled dimensional reconstruction. This approach yields a reduced Huang-Rhys factor (from 30.7 to 21.5) and prolonged STE lifetime (8.60 to 9.19 ps). Density functional theory (DFT) calculations reveal a significant reduction in excited-state octahedral distortion (Δd = 0.898 × 10-3 for Cs3Sb2I9 vs. 5.752 × 10-3 for Cs3Sb2I6Cl3), confirming intrinsically weaker EPC in Cl-free structures. The device achieves a power conversion efficiency (PCE) of 3.40% under AM 1.5G solar illumination and an 8.2% PCE under 1000 lux white LED conditions. alongside Long-term stability measurement confirms its environmental robustness. These results represent the highest indoor performance reported to date for Sb-based perovskite-inspired solar cells.

Tin-based perovskite materials have shown great potential applications in environment-friendly optoelectronic devices. However, it is difficult to control the film growth process by solution method due to the rapid formation speed of the film. In this work, tin-based perovskite (FASnI(3)) films were prepared by chemical vapor deposition method. The film is mainly composed of thin nanoplates when the deposition temperature is 600 degrees C. The film shows good antioxidant properties by comparing the ratio between Sn4+ and Sn2+. Time-resolved fluorescence imaging measurements clearly reveal the fluorescence lifetime inhomogeneity in the film. The photodetectors based on tin-based perovskite films show good photo response properties, with a switching ratio of 808. This work provides new opportunities for non-lead perovskite thin film preparation and optoelectronic application.

All -inorganic CsPbBr (3) perovskite films with the different degrees of Cu ion substitution were prepared by multi -step spin coating precursor solutions. Based on the results of XRD and XPS, it was confirmed that partial Pb was replaced by Cu and no impurities were generated with the increase of Cu content in the Cu -doped CsPbBr (3) film. The red shift of the diffraction peak and the decrease of lattice constant in the range of 0%-3% Cu ions in this XRD spectra demonstrate the progressive substitution of Cu ions, which suggests lattice contraction. It was seen that the average grain size significantly increased to 841.94 nm with the addition of 3% Cu into CsPbBr (3) films from SEM. Meanwhile, the optical band gap of the CsPbBr (3) film decreases to 2.336 eV and the recombination probability of carriers of the CsPbBr (3) film is lower when the Cu ion content gradually increases to 3%. However, the average grain size reduces, the optical band gap increases, and the recombination probability of carriers improves as the Cu ion content gradually increases to 6%. Therefore, the content of optimal Cu ion is 3% in this experiment. This work provides a new path for the development of all -inorganic perovskite films and devices.

Reasonable design and optimization of photocatalyst structure is an important strategy to realize sustainable hydrogen production. The rational design and interfacial tuning of Z-scheme heterojunctions remain challenging. Herein, a series of hollow cage-like Zn0.01Co0.99Se2/ZnIn2S4 Z-scheme heterojunction photocatalysts templated by cobalt-based bimetallic organic frameworks is successfully obtained via a hydrothermal approach. As expected, the optimized catalysts exhibit excellent hydrogen production performance without noble metal co-catalysts, which is mainly attributable to the synergistic effect of abundant active sites, strong light trapping and effective charge separation. Spectroscopic characterization and density functional theory (DFT) calculations indicate that the doping of Zn ions leading to more photogenerated carriers and faster charge transfer rates inside the heterojunction is another key factor in improving the catalytic performance. This work provides a feasible strategy for the optimization and design of Z-scheme heterojunctions through structural and interfacial engineering.

Recently, the stable all-inorganic lead-free Cs3Sb2I9-xClx perovskite-like solar cells have attracted enormous attention where the electron transport layer (ETL) is extremely important. Herein, the amorphous Nb2O5 (a-Nb2O5) ETL was prepared by sputtering technology at room temperature to increase the optical band gap of a-Nb2O5 layer, improve its conduction band minimum (CBM), suppress charge recombination at the a-Nb2O5/Cs3Sb2I9-xClx interface, and reduce leakage current of Cs3Sb2I9-xClx solar cells. More importantly, the a-Nb2O5-based Cs3Sb2I9-xClx solar cell presents a higher efficiency (1.75 %) compared with Cs3Sb2I9-xClx device containing a-TiO2 ETL (0.69 %). Additionally, the a-Nb2O5 ETL increases the device stability in air. This study highlights the great effect of a-Nb2O5 ETL as a carrier controller on enhancing performance of Cs3Sb2I9-xClx solar cells.

In this work, low-cost inorganic antimony-based perovskite-inspired solar cells with the co-assistance of DMAI and RbCl are constructed. The resulting device achieves a relatively high efficiency of 3.37% with a record open-circuit voltage of 0.93 V.

Inspired by the unique properties of the three-dimensional hollow nanostructures in the field of photocatalysis, as well as the combination of co-catalyst, porous hollow spherical Pd/CdS/NiS photocatalysts are prepared by stepwise synthesis. The results show that the Schottky junction between Pd and CdS accelerates the transport of photogenerated electrons, while a p-n junction between NiS and CdS traps the photogenerated holes. As co-catalysts, the Pd nanoparticles and the NiS are loaded inside and outside the hollow CdS shell layer, respectively, which combines with the particular characteristic of the hollow structure, resulting in a spatial carrier separation effect. Under the synergy of the dual co-catalyst loading and hollow structure, the Pd/CdS/NiS has favorable stability. Its H2 production under visible light is significantly increased to 3804.6 μmol/g/h, representing 33.4 times more than that of pure CdS. The apparent quantum efficiency is 0.24% at 420 nm. A feasible bridge for the development of efficient photocatalysts is offered by this work.