Power semiconductor devices have a great impact on the modern society electronic system applications. The study aims to improve the switching performance of power MOSFET devices based on materials with different bandgap structures and technologies. In this concern, the static electrical characteristics of three power MOSFET devices made of Silicon (Si-MTP20N15E; Eg = 1.12 eV), Silicon Carbide (SiC-TW107N65C; Eg = 3.25 eV) and Gallium Nitride (GaN-TPH3208PS-ND; Eg = 3.44 eV), operating at the enhancement mode were tested. Moreover, the design and implementation of their switching circuits were investigated at frequency of 1.0 kHz. In addition, the influence of their materials on the switching times was studied. From which, it is noted that, GaN MOSFET has the fastest switching ON/OFF times (0.3µs /0.34µs), rather than SiC and Si. Where, their switching ON/OFF times were reported to be (0.37µs /0.52µs and 0.76µs /0.8µs), respectively. These findings underscore the potential of wide bandgap materials in enhancing the performance of power electronic devices.

In this paper, a hybrid deep learning neural network controller (HDLNNC) for nonlinear systems is proposed. The proposed controller structure consists of a multi-layer feed-forward neural network, which can be trained based on the hybrid deep learning. The Lyapunov stability criterion is used to develop an adaptive learning rate due to the learning rate of the updating parameters plays a worthy role in achieving the stability of a system. To show the robustness of the proposed controller and its performance, several tests such as disturbance signals and parameter variations are carried on a numerical example. In this concern, the practical implementation of the proposed HDLNNC is executed on a real system. The results indicate that the proposed controller is able to improve the system performance compared with other existing controllers.

Power saving todays is the most important requirement, specially lighting where it consumes a sizable portion of total electric energy. Therefore, controlling the brightness of the light is necessary to save electrical energy. For achieving this, an electronic illumination control system is essential. This paper aims to design and implement a simple and low-cost illumination control system with high efficiency, based on some power semiconductor devices such as triode alternating current (TRIAC) and diode alternating current (DIAC). In this concern, the performance of the electronic illumination control system, as well, the electrical parameters (break over voltage, latching current, holding current, on-state voltage and off-state leakage current) of the proposed power devices were investigated, where it is proved that the achieved power saving of the present electronic illumination control system in the order of 27% was obtained- while retaining more than 90% of the original light intensity. Therefore, the proposed system can be applied to saving power in our daily lives.

The renewable energy source fluctuations could be reduced by applying the energy storage techniques, by storing the excess power generation for making it accessible for the daily life applications. Moreover, the photovoltaic systems could be more flexible, reliable as well has power cost reduction with the help of energy storage techniques. The most widely used energy storage technologies are the batteries which immediately convert the chemical energy contained in their active materials into electric energy via the electrochemical oxidation-reduction (redox) reaction. In this sense, the proposed study aimed to shed further light on selecting the most advanced rechargeable battery type and material based on their effectiveness and economic feasibility. The following storage batteries were chosen to be tested; Lithium (Lithium – polymer, Lithium – ion) and others Valve regulated lead acid batteries. Their charging/discharging characteristics were carried out based on their mode of operations. For charging, the constant current- constant voltage mode was used, while for the discharging, the constant current mode was applied. From which their electrical and performance parameters were calculated, based on it, it could be concluded that, Li-poly battery was the most suitable one for using in smart electronic devices and remote-control vehicles, owing to its high energy density, high specific energy, high power density, high specific power, low internal resistance, in addition to its very slim geometry which is attributed to gelled polymer electrolyte.

In the present paper, a hybrid deep learning diagonal recurrent neural network controller (HDL-DRNNC) is proposed for nonlinear systems. The proposed HDL-DRNNC structure consists of a diagonal recurrent neural network (DRNN), whose initial values can be obtained through deep learning (DL). The DL algorithm, which is used in this study, is a hybrid algorithm that is based on a self-organizing map of the Kohonen procedure and restricted Boltzmann machine. The updating weights of the DRNN of the proposed algorithm are developed using the Lyapunov stability criterion. In this concern, simulation tasks such as disturbance signals and parameter variations are performed on mathematical and physical systems to improve the performance and the robustness of the proposed controller. It is clear from the results that the performance of the proposed controller is better than other existent controllers.

The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 degrees C) up-to135 degrees C and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I-V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 degrees C, down to 0.163 A, at 135 degrees C. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%. (C) 2020 Korean Nuclear Society, Published by Elsevier Korea LLC.

For the current paper, the technique of feed-forward neural network deep learning controller (FFNNDLC) for the nonlinear systems is proposed. The FFNNDLC combines the features of the multilayer feed-forward neural network (FFNN) and restricted Boltzmann machine (RBM). The RBM is a very important part for the deep learning controller, and it is applied in order to initialize a multilayer FFNN by performing unsupervised pretraining, where all the weights are equally zero. The weight laws for the proposed network are developed by Lyapunov stability method. The proposed controller is mainly compared with FFNN controller (FFNNC) and other controllers, where all the weights values for all the designed controllers are equally zero. The proposed FFNNDLC is able to respond the effect of the system uncertainties and external disturbances compared with other existing schemes as shown in simulation results section. To show the ability of the proposed controller to deal with a real system, it is implemented practically using an ARDUNIO DUE kit microcontroller for controlling an electromechanical system. It is proved that the proposed FFNNDLC is faster than other FFNNCs in which the parameters are learned using the backpropagation method. Besides, it is able to deal with the changes in both the disturbance and the system parameters.

In the present paper, a package of BD-4 germanium backward tunnel diodes, which widely used in modern electronic systems were chosen for studying its operation as an oscillator circuit under the influence of a wide range of temperatures ranging from 100 K up to 343 K. The electrical parameters of the devices based on their I-V characteristics were investigated, where it is clear that peak-to-valley current ratio, valley voltage, forward voltage, voltage span, voltage swing, and current span were decreased from 12.9, 0.35 V, 0.65 V, 0.31 V, 0.65 V, and 50.70 mu A down to 3.2, 0.22 V, 0.35 V, 0.17 V, 0.30 V, and 31.30 mu A, respectively. On the other hand, both peak voltage and negative differential resistance were shown to be almost temperature independent. Besides, a simple sinusoidal LC oscillator circuit that operates a 2.30 MHz was designed, implemented and tested, where its output signal voltage waveforms were plotted at different temperature levels within the investigated range. On the other hand, it was shown that the oscillation frequency, peak-to-peak voltage, output power spectrum, and phase-noise were temperatureindependent provided that the diode is adequately biased in its negative resistance region. Finally, the obtained results were shown to be in good agreement in the trend with that previously published.

The present paper is a trial to shed further light on the dependence of the junction characteristics of the proposed optocoupler type 4N25 on the operating conditions; the applied voltage and signal frequency.For the input light emitting diode and output phototransistor, their forward and reverse (C-V) characteristics were investigated and plotted at different applied bias voltage-and frequency-levels.In this concern, the diffusion-and transition-capacitances, impedance, quality-and dissipation-factors, and the phase angle were investigated.Concerning the light emitting diode, at frequency value of 200 kHz, as an example, the diffusion capacitance value increases exponentially from 0.166 nF, up to 4.71 nF, measured at forward bias voltages of 0.01 Volt and 1.20 Volts, respectively.Also, at an applied forward bias voltage of 1.0 Volts, the diffusion capacitance increases from 1.76 nF up to 2.84 nF, measured at frequency levels of 50 kHz and 300 kHz, respectively.Considering the transition capacitance, and at signal frequency of 200 kHz, its value was shown to be decreased rapidly from 178.36 pF down to 30.42 pF whenever measured at 0.01 Volt and 0.30 Volt, respectively.But for higher bias voltages, the decreasing rate was shown to be negligible.On the other hand, at applied bias voltage of 1.0 Volt, its value was shown to be decreased from 28.76 pF down to 17.59 pF, measured at frequency levels of 50 kHz and 300 kHz.For the phototransistor, its emitter junction capacitance increased exponentially as a function of the emitter-base bias voltage, where at frequency of 200 kHz, as an example, its value increased from 0.581 nF up to 3.048 nF, measured at 0.01 Volt and 0.80 Volt, respectively.On the other hand, the collector junction capacitance was shown to be decayed rapidly as a function of the applied reverse bias voltage.Where its value decreased from 1.29 nF down to 0.012 nF, measured at 0.01 Volt and 0.90 Volt, at frequency of 200 kHz, as an example.Finally, it is proved that for both capacitances, their values are a direct decreasing functions of the operating frequency, where at applied bias voltage of 0.8 Volt, a values of 7.6878 nF and 0.05338 nF were decreased down to 1.811 nF and 0.0254 nF, respectively, with increasing the frequency from 50 kHz up to 300 kHz.

The present paper is mainly concerned with the performance improvement of concentrated photovoltaic systems based on convex and Fresnel lenses with different geometrical properties (diameters and focal lengths), subjected to artificial light source “Incandescent lamp” as a simulation to sunlight. A number of experiments have been executed to study their effects on all the electrical parameters of simono crystalline photovoltaic cell (2.0 cm×1.0 cm), as well the concentrated light intensity. The morphology of elemental composition and the spectral transmittance applying Scanning Electron Microscope and FT-IR Spectrometer of both the convex -and Fresnel -lenses were investigated, demonstrating high optical quality of the lenses. For convex lens with 9.0 cm in diameter, the obtained results show significant direct increasing of short circuit current, open circuit voltage, maximum output power, fill factor, and efficiency of PV cell as well the concentrated light intensity, where their values were increased from 0.32 mA, 0.28 Volt, 0.04 mW, 0.46 and 9.55% as well 0.226 klux up to 6.72 mA, 0.45 Volt, 1.85 mW, 0.6 and 25%, as well 3.5 klux, respectively. Considering the Fresnel lens with diameter of 42.43 cm, the given parameters were increased up to 78 mA, 0.454 Volt, 21.6 mW, 0.6 and 30% as well 35.0 klux, respectively.

Recent developments in airborne magnetic detection systems have made it possible to detect small Ferro metallic objects such as unexploded ordnance and land mines. However, airborne magnetic data can be really large and, therefore, there is an increasing need for a fully automatic technique that could be used to correct, in real time, the noises arise during magnetic data accusation. This paper proposes a novel electronic hardware system that implemented, tested, and applied on real survey data, where it is proved to be satisfactory for accurate removal of both the heading and dc-shift noises in acquired airborne magnetic data. These errors are severe due to dominating the airborne magnetic data in all geophysical systems applications. Finally, the proposed simple technique was proved to ideally suit for incorporation into airborne magnetic instrumentation systems. Keywords— Airborne magnetic; unexploded ordnance; heading; dc-shift; noise; microcontrollers.

In the present paper, a detailed study was carried out concerning the factors affecting the performance of one of the most important optoelectronic devices that is optocouplers. In this concern, operation of such devices under the influence of extreme environmental conditions of input LED current (I-F) up to 120 mA and temperature (from -175 degrees C up to 100 degrees C) was investigated. A detailed experimental and simulation studies of the initial electrical characteristics of the input LED and output phototransistor of the proposed 4N25 optocoupler, as well as, its current transfer characteristics were investigated. Where, the obtained results from both techniques were found to be in a good agreement. For the input LED, and within the temperature range from -175 degrees C up to 100 degrees C, the threshold voltage was shown to be varies from 1.06 Volts down to 0.72 Volt, although its value at room temperature was 0.8 Volt. On the other hand, and considering the output phototransistor, its temperature dependence of the collector current was shown to follow a Gaussian distribution, where as an example, at input LED current of 10 mA, and emitter-collector voltage of V-CE = 0.6 V, the collector current value varies from 6.6 mA up to 10.5 mA within the investigated temperature range, with a peak value of 19.7 mA, recorded at -55 degrees C. Finally, for the current transfer characteristics, dc-current gain and current transfer ratio of the 4N25 optocoupler, their values were shown to be varied from 1.29 mA, 0.66 and 66% up to 10.28 mA, 1.05 and 105%, within the investigated temperature range, following a Gaussian distribution with a peak values of 14.1 mA, 1.97 and 190%, recorded at -55 degrees C, respectively.

Nuclear radiation plays a very negative role in the semiconductor devices functionality, mainly when particular semiconductor devices are exposed to an extreme type of radiation. Tunneling is an important aspect of charge transport in semiconductor and molecular devices. So, the effect of electron irradiation on the current–voltage (I–V) characteristics of Germanium (Ge) and Gallium Arsenide (GaAs) tunneling diodes are reported at room temperature before and after irradiation. Electrons exposure, up to 3.73 My, of the tunnel diodes leads to a pronounced change in their electrical characteristics where the rate of change of the peak- and valley-currents, for Ge and GaAs tunnel diodes, due to electron exposure are shown to be about +53.6, +142 µA/MGy and +29.4, +53.6 µA/MGy, respectively. On the other hand, for the same irradiation doses, the rate of change of the valley- and forward-voltages and output power are shown to be about −44.9, −15.9 and −6.7 mW/MGy, for Ge tunnel diodes, respectively. While, GaAs samples, reported values of −81, −83 mV/MGy and −11.6 mW/MGy are observed. Besides, the peak to valley current ratio of both Ge- and GaAs TDs are proved to decrease due to electrons exposure, with damping ratios of about 78 and 81%, respectively.

Indoor radon concentrations were determined with the use of simple electronic systems were commonly used as detectors for different environmental pollutions. In this concern, a potentially very simple life-saving detector-a radon detector was investigated. Where, it is well known that radon gas is one of the most dangerous gases, as well, it leaks easily for the ground. Radon concentrations have been measured, successfully, in different locations at the Nuclear Materials Authority site at Qattamya, Cairo, applying a prototype, simple ion-chamber monitor, and well established radon monitor (RTM 1688-2-Radon Monitor). The radon concentrations were found to be in the range of around 16.7 20.7 Bq./m3, although it shown to be with less levels (around 10.3 Bq./m3) at ventilated basement hall. The obtained data from both systems were found to be in an excellent agreement.

The present paper is a trial to shed further light on the Indirect Adaptive Fuzzy Logic Controller (IDAFLC). In this concern, the proposed technique is predestined from two levels, where the lower level is based on Mamdani fuzzy controller. On the other hand, the upper level is an inverse model based on a Takagi–Sugeno method, in which its output is used to adapt the parameters of the fuzzy controller in the lower level. Moreover, the upper level contains learning mechanism to adapt model identification parameters. The proposed IDAFLC is implemented using an Arduino DUE kit. From the practical results, it is proved that the proposed adaptive controller has the ability to adapt the model identification parameters and improves, successfully, both the performance response and the disturbance due to the load and also measurement error of sensor in the speed control of the DC motor.

Detailed computer simulation based study of photovoltaic cells/ modules using circuit simulator PVEducation S/W package was presented in this paper and used to simulate a circuit based model or PV cells/ modules and then to conduct behavioral study under varying conditions of solar insolation including temperature, diode model parameters, series and shunt resistance, solar energy ……etc. The study is very helpful in clearly outlining the principles and the intricacies of PV cells/modules and may surely be used to verify impact of different topologies and control techniques on the performance of different types of PV system. To put the simulation study on firm footing, a comparative study was carried out with a previous work done by the authors, where an excellent agreement was obtained.

Recent developments in airborne magnetic detection systems have made it possible to detect much small magnetic objects such as unexploded ordnance. However, the data sets are extremely large and the measurements must be processed and interpreted. Therefore, there is an increasing need for a fully automatic processing and interpretation techniques that can be used to make decisions regarding the nature of the source in real time. So, the aim of the present paper is to shed further light on the real time correction of parallax/Lag -and air-condition-noises in airborne magnetic data acquisition. A novel electronic technique, based on micro-controllers design and implementation, was designated for real-time processing applications. The proposed technique shows excellent airborne magnetic data results considering actual field examples. The proposed technique verifies an accurate and objective tool for magnetic objects detection compared with the existing PEI tools considering cost and processing automation capabilities.

This paper presents a proposed approach based on an adaptive fuzzy logic controller for precise control of the DC motor speed. In this concern, the proposed Direct Adaptive Fuzzy Logic Controller (DAFLC) is estimated from two levels, where the lower level uses a Mamdani fuzzy controller and the upper level is an inverse model based on a Takagi–Sugeno (T–S) method in which its output is used to adapt the parameters of the fuzzy controller in the lower level. The proposed controller is implemented using an Arduino DUE kit. From the practical results, it is proved that the proposed adaptive controller improves, successfully both the performance response and the disturbance due to the load in the speed control of the DC motor.

A theoretical study had been carried out on the effect of radiation on the electrical properties of silicon power diodes. Computer program "PDRAD2013" was developed to solve the diode equations and to introduce the operating conditions and radiation effects upon its parameters. Temperature increase interrupts the electrical properties of the diode in the direction of drop voltage decrease across the p-n junction.. The model was analyzed under the influence of different radiation type (gamma-rays, neutrons, protons and electrons) with various dose levels and energies. The carriers diffusion length were seriously affected leading to a large increase in the forward voltage. These effects were found to be function of radiation type, fluence and energy.

In this paper, the design and applications of a very simple multi-sensors network for environmental monitoring was presented. In this concern, the design is based on using a smart radio serial transceiver module (RF1100-232), microcontroller (PIC16F877), stationary sensors (temperature; LM-35, gamma-ray; GSP-3, and magnetic; CS-3) and solar cell power supply as an example, although the proposed node can carry up to eight detectors. The system was proved to accurately measure temperature in the range up to 150°C, radiation up to around 60,000 cps, and magnetic strength for iron objects with volume ranges from 0.4 to 30 cm 3 . Finally, the proposed system was provided with an alarm facility that is at any instant, as the measured value surpasses the pre-determined normal value, the system sends out the corresponding message alarm and reported the measurements continuously.