This paper reports on the different responses observed during heavy ion irradiation and Total Ionizing dose test on a newly developed Rad-Hard, 8-Channel, 50ksps to 1Msps, 12-Bit A/D Converter, called RHFAD128.

This paper provides a detailed overview of the reliability and radiation tests (both TID and SEE) performed inside the QML-V qualification phase and a high voltage application of RHRPMICL1A IC (integrated circuit) device, a rad-hard integrated current limiter designed and developed by STMicroelectronics. The device was born from the idea of ESA to have an ICL (Integrated Current Limiter) of universal use and containing most of the components for the relevant current limiter functions (such as the Latching and Re-triggerable modes), in order to avoid recurrent re-design and implementation by using discrete components. The device has obtained recently the QML-V qualification with SMD number 5962-17211. The high voltage application, described in the second part of this paper, allows using the device in power bus of 100V or higher, as those ones required more and more in the telecom satellites. The related application tests, performed in the laboratory for the validation of the proposed solution, are also presented.

This paper reports on the impact of single event gate rupture and post-irradiation gate stress on Power MOSFETs switching ability. A dedicated setup has been developed and presented in this paper. The data showed that devices can switch after Single Event Gate Rupture. Failure of energy conversion system does not depend on gate current of the device but its associated external circuitry. Moreover, the data showed that devices having a gate layout constituted of parallel stripes are less sensitive than hexagonal shape when electrical constraints are applied after failure. It was also observed that the sensitivity of SEGR can be enhanced by X-ray irradiation but enhanced degradation is not observed during the switching operation.

This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between IG gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.

Electrical characterizations are used to understand power MOSFETs failure mechanisms after heavy ion irradiation. Results indicate that both bias levels and impact localization of heavy ion are important parameters for SEGR triggering or latent defect formation. This work addresses the limits of the post-irradiation gate stress relevance used for Power MOSFETs space qualification.

A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.

Heavy ion-induced Power MOSFET's reliability degradation has been studied. Irradiations were realized at low and high energy with the same electronic stopping power at the surface of the die. For both energies, a decrease of the charge to breakdown has been observed after irradiation. However, an enhanced degradation of the oxide layer reliability is observed at low energy. The lifetime reduction at high energy is correlated to local disorder along the ion track that can act as precursor damage. On the other hand, the most important reliability degradation at low energy is attributed to a synergy effect between ionizing and non-ionizing processes. Clusters of defects can indeed be formed, adding an additional wear-out mechanism. These results may be significant in the frame of Single Event Testing

Charge to breakdown reduction after electric stress is observed after heavy ion irradiation at two energies exhibiting a similar LET value. An enhanced degradation of the oxide layer reliability is observed at low energy.

Charge to breakdown reduction after electric stress is observed after heavy ion irradiation at two energies exhibiting a similar LET value. An enhanced degradation of the oxide layer reliability is observed at low energy.

Charge collection is used as a non-destructive technique to analyze the statistical response of vertical power MOSFETs and their single-event burnout (SEB) rate as a function of the incident ion energy. Two effects are observed at either low or high energy. At low energy, the collected charge significantly decreases because of the limited ion range and energy straggling in the thick epitaxial layer. Because of this limited range effect, using low energy ions for SEB testing can significantly underestimate the SEB rate. At high energy, the presence of thick source bond wires, which partially cover the die area, as typically encountered in power MOSFETs, induce a large shadowing effect. When crossing the bond wires, high energy ions loose energy and can have a higher LET (but still a significant range) when they reach the active die. As a result, they can deposit more charge in the thick sensitive epitaxial layers of the transistors than the primary beam. A significant probability of high collected charge events is then observed at high energy. Contrary to the low energy (range) effect, the shadowing at high energy contributes to overestimating the SEB rate. General rules for the SEB radiation hardness assurance, related to the ion energy versus the power MOSFET voltage rating, are provided to avoid both range and shadowing effects.

We present Single Event Effects characterization and Total Ionizing Dose behaviour up to 300 krad(Si) on Rad-Hardened A/D converter.

New radiation-hardened operational amplifiers have been ELDRS and SEE characterized. This paper presents the TID results at high and low dose rates up to 300krad(Si) and the SEE test results.