To realize high-throughput optical wireless communication (OWC) indoors using a photodiode (PD) receiver, the receiver that mechanically tracks an LED transmitter is effective. The receiver consists of a photodiode with a narrow field of view (FOV) and a camera that captures the movement of the LED transmitter. In this study, a rolling shutter (RS) camera is used to identify and locate the transmitter in real time by an object detection algorithm, and the receiver mechanically tracks the transmitter using two-axis motors. RS camera uses YOLOv5 to detect the location of the transmitter by identifying low-rate modulation in the preamble. A data rate of 1Mbps is achieved indoors between an LED transmitter moving at walking speed and a tracking PD receiver.

Consider a set of continuous maps from the interval [0,1] to a domain in ℝ^d. Although the topological boundary of this set in the path space is not smooth in general, by using the theory of functions of bounded variation (BV functions) on the Wiener space and the theory of Dirichlet forms, we can discuss the existence of the surface measure and the Skorokhod representation of the reflecting Ornstein-Uhlenbeck process associated with the canonical Dirichlet form on this set.

Pb(Zr,Ti)O-3 (PZT) thin films were prepared on 8"phisquare substrate by ULVAC-MOCVD system. Thickness and compositional uniformity of PZT films were remarkably depending on the deposition conditions. Film thickness uniformity of +/-3% on 8"phisquare subatrate was achieved by optimizing the hardware construction (O-2-Precursor mixing and gas flow control) and deposition parameters. Compositional uniformity was also improved by controlling temperature distribution on the substrate and choosing precursors which have the close decomposition temperature. For ferroelectric properties of MOCVD-PZT films on 8"phisquare substrate, 2Pr above 40 muC/cm(2) were obtained throughout their measurement points.

Micro-patterned PZT(20/80) films were fabricated on Pt/Ti/SiO2/Si substrate from a photosensitive solution by the sol-gel process. A coated film was exposed to UV rays (365 nm) at an intensity of 570 mJ/cm2 and developed with a 1:1 mixture of 2-methoxyethanol and isopropyl alcohol. The 170-nm-thick film with a smooth surface showed P r of 31.9 µC/cm2 and E c of 120.8 kV/cm. Films with smoother surface morphology and better electrical properties than conventional PZT films were obtained by this process.

(BTMSE)Ag(hfac) (BTMSE = trans-bis(trimethylsilyl)ethene) was chosen as a suitable precursor for the XeCl laser (308nm) MOCVD of Ag. Iso-propanol solution of (BTMSE)Ag(hfac) was used as a liquid source for the liquid delivery method, high deposition rate 9nm/min at substrate temperatures of 100 degrees C and 120 degrees C were obtained at the vaporizer temperature of 90 degrees C. This deposition rate is three times faster than by conventional bubbling method and life of the source and reproducibility of the deposition were also improved. Electric resistivities of the laser deposited film shows significantly low resistivity of 10(-6)Omega-cm compared to 10(-3)Omega-cm of thermal MOCVD film These results indicates that the laser MOCVD is one of the effective method for the preparation of the high quality silver film.

SBT and SBTN thin film capacitors on Pt/Ti/SiO2/Si have been fabricated from photosensitive MOD solutions with the composition Sr0.8Bi2.35Ta2-xNbx (x=0.0-0.8). Films prepared by a conventional spin-on and anneal process are essentially randomly oriented, while films that received UV radiation before annealing exhibit c-axis orientation. The degree of c-axis orientation is enhanced by short pyrolysis times. Ferroelectric properties were characterized by hysteresis and pulse measurements. A higher Qsw and lower V(90%) were measured for films with random orientation in comparison with films having the same composition but c-axis preferred oriented. The c-axis orientation can be controlled by substrate pre-annealing. UV irradiated SET and SBTN films with random orientation can be prepared on the substrates that are pre-annealed at 650 degrees C.