A diode-pumped injection-seeded Nd:YAG laser system with an average output power of 38 W is described. The laser operates at 300 Hz with pulse energies up to 130 mJ. The temporal pulse shape is nominally flat in time and the pulse width is user selectable from 350 to 600 ps. In addition, the spatial profile of the beam is near top hat with contrast <10%.

High Brightness and Power Diode Pumped Nd:YAG Laser is the engine for Laser Produced X-ray (LPX). The LPX system consists of a compact diode pumped Nd:YAG laser system which produces brightness in excess of 10(15) W/cm(2) on target at up to 300 watts average power (4 parallel beams). The MOPA (Master Oscillator Power Amplifier) laser system delivers 250 mJ/pulse @ 300 Hz per beam (75 W average). 4 beams system at 300 W average power was demonstrated. The high brightness is achieved using similar to 800 ps pulse duration and near diffraction limited beam quality. Very high conversion efficiency (similar to 9%) into 2 pi sr from 1064 nm laser output to I nm broadband x-ray was demonstrated using copper tape target. I nm x-rays were used for proximity x-ray lithography and demonstrated feature size resolution down to 75 nm. Narrow linewidth x-ray (lambda/Delta lambda-600) has also been demonstrated with 1% conversion efficiency from 532 nm to 3.37 nm using Mylar tape target for compact high resolution and contrast x-ray tomography for biological cells. A unique mechanical shutter was developed to stop all the ablated debris from the target material that can damage and contaminate the fragile x-ray optics.

Soft x-rays have wavelengths in the range of 1-15 nm and therefore the diffraction limited spot size of focused x-rays can be as small as 1.22 x the radiation wavelength, or less than 20 nm spot size. Using our pulsed x-ray source and focusing a small collected solid angle of this x-ray radiation to a sample provides enough power to form a very hot plasma that emits a range of radiation from UV through IR that can be collected and analyzed on a conventional optical spectrometer. In addition to diagnostic capabilities the instrument can be also used as a tool to form structures at nanometer scale resolution. Since the plasma is formed by ablating the target material with x-rays the target can be patterned or nanomachined using the plasma itself. It should be possible to pattern nanoscale devices by rastering the material under the nanoplasma. Finally in analogy to plasma assisted CVD processes, organometallic vapors could introduced into the sample chamber such that the nanoplasma locally plates out specific species of metals of other materials on the target at nanoscale sizes for forming devices, circuits, wires, etc. This paper presents a design for a nanoplasma instrument, predicted performance parameters will be presented, and development issues identified and discussed.

One of the key leverage factors in determining the viability of laser-plasma sources for EUVL is the conversion efficiency of laser light to EUV emission in the 13-nm region. We describe experiments and theoretical calculations on a mass-limited laser target design using tin that offers high conversion efficiency.

A compact laser-produced plasma x-ray source radiates 1 nm x rays with an average power of 24 W in 2π steradians. The x-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The point source x-ray radiation is collimated with a polycapillary optic to a parallel x-ray beam. The collimated plasma source (CPS) is used to demonstrate proximity x-ray lithography of 100 nm lines with a 16 μm gap between the mask and wafer. The CPS is optimized for integration with an x-ray stepper to provide a complete collimated plasma lithography exposure tool for the manufacture of high-speed GaAs devices.

JMAR develops Laser-Produced Plasma (LPP) sources for lithography applications, and has specifically developed Collimated laser-Plasma Lithography (CPL) as a 1 nm collimated point source and stepper system to address sub-100nm lithography needs. We describe the CPL source development, show demonstrated sub-100nm printing capability, and describe status of a beta lithography tool. The system will be power-scaled to address silicon device contacts and vias at 90nm and below. This development has much in common with LPP Extreme UltraViolet Lithography (EUVL) sources; an EUV source concept is presented to address the high power requirements of that Next Generation Lithography (NGL).

A compact x-ray source radiates 24 Watts average power of 1nm x-rays in 2 (pi) steradians. The laser produced plasma x-ray source has a 300 W laser driver which is a compact, diode-pumped solid-state Nd:YAG laser system. The x-ray conversion efficiency is 9 percent of the laser power delivered on target. The x-ray source was used to demonstrate x-ray lithography of 75 nm lines. The x-ray source is optimized for integration with a x-ray stepper to provide a complete x-ray lithography exposure tool for the manufacture of high-speed GaAs devices.

Summary form only given. A compact laser produced plasma X-ray source generates 24 Watts average power of 1.1 nm X-rays in 2/spl pi/ steradians. The laser-plasma source is driven by a compact, diode-pumped, solid-state 300 Watt Nd:YAG laser system.

300 watts table top diode pumped Nd:YAG laser system consisting of a master oscillator, a pre-amplifier, and four parallel amplifiers was developed for generating kintensities over 10(14) watts/cm(2) at the focal plane for efficient soft x-ray generation at 11 Angstrom.

A high power picosecond soft x-ray source is generated by a compact, modular, diode pumped solid state laser BriteLightTM. Three x-ray source version are constructed from laser modules with increasing power. The power of the x-ray sources is tailored to potential applications. The building block of such a modular system is a 3 Watt x-ray power source with 1.1 keV x-ray photon energy. The laser system is very compact with dimensions of 4 ft X 3 ft X 1 fit. It is composed of a laser master oscillator, pre-amplifier and one power amplifier. A four laser amplifier system was also constructed in order to generate 12 W of x-rays for application to x-ray lithography.