Collimated laser-Plasma Lithography (CPL) offers potential to match Next Generation Lithography (NGL) needs, ending a pursuit of ever-larger lens NA and ever-smaller k1 process resolution factor. Powered by a laser-produced plasma (LPP) source at 1nm, it capitalizes on mature development of x-ray lithography, which is the only NGL that has produced working chips. JMAR is upgrading its CPL system to increase overall throughput (system power) and is focusing on solving a known industry problem for which CPL presents an advantage: printing sub-90nm contacts in memory chips. The paper will discuss CPL system characteristics and performance. Supporting information on the upgrades to the laser and x-ray generator will be included. Specific resists and mask techniques and the roadmap leading to multi-generational support capability down to the 45nm node will be described.

A compact laser-produced plasma x-ray source radiates 1 nm x rays with an average power of 24 W in 2π steradians. The x-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The point source x-ray radiation is collimated with a polycapillary optic to a parallel x-ray beam. The collimated plasma source (CPS) is used to demonstrate proximity x-ray lithography of 100 nm lines with a 16 μm gap between the mask and wafer. The CPS is optimized for integration with an x-ray stepper to provide a complete collimated plasma lithography exposure tool for the manufacture of high-speed GaAs devices.

JMAR develops Laser-Produced Plasma (LPP) sources for lithography applications, and has specifically developed Collimated laser-Plasma Lithography (CPL) as a 1 nm collimated point source and stepper system to address sub-100nm lithography needs. We describe the CPL source development, show demonstrated sub-100nm printing capability, and describe status of a beta lithography tool. The system will be power-scaled to address silicon device contacts and vias at 90nm and below. This development has much in common with LPP Extreme UltraViolet Lithography (EUVL) sources; an EUV source concept is presented to address the high power requirements of that Next Generation Lithography (NGL).

shows a structural phase transition near . The temperature dependence of the optical birefringence , of the elastic stiffness constants and of the effective electro-optical coefficients is determined. At the derivative changes its sign. Elastic properties are studied by recording the acoustic resonances of a rectangular parallelepiped. We discuss those features of the method which are important in the investigation of phase transitions. No signature of elastic softening near is observed in . Below and increase continuously. The elastic hardening is accompanied by the onset of a small electro-optical effect. Its existence demonstrates the loss of the centre of symmetry, its anisotropy is consistent with a triclinic symmetry, and its magnitude suggests a spontaneous polarization of about in the low-temperature phase. Although is reminiscent of a weak ferroelectric material there are some observations which are uncommon to a paraelectric - ferroelectric phase transition.

A new method is described which allows to determine half-automatically and with high precision changes in optical path differences of single crystals. It uses a special interferometric arrangement which yields an extremely stable interference pattern resulting in a high resolution intensity distribution. Applications for the analysis of the linear electrooptic and electrostrictive effects of quartz and KH2PO4 are demonstrated.

The elastic behaviour of Na2[Fe(CN)5NO] · 2H2O in the ground state and after population of the two metastable states (SI,SII) was investigated between 293 and 88 K by the aid of the Rectangular Parallelepiped Resonance (RPR) method. For SI, a slight decrease of all elastic constants was found, whereas SII showed a strong attenuation and broadening of the acoustic resonances. The values for the elastic constants and their temperature variation in the ground state are given.

It is demonstrated that doping of NaCl with CuCl increases the elastic constants of NaCl and modifies their dependence on temperature. The changes are significantly larger than estimated for a statistical distribution of the doping material. The crystallinity of embedded CuCl is considered to be responsible for additional elastic effects. This conclusion is verified by studying different kinds of annealing effects. The elastic interaction between guest and host crystals is interpreted as a relaxation of the NaCl lattice which closes the spatial gap caused by the lattice misfit. This results in a spontaneous strain which modifies the elastic constants due to the contribution of nonlinear terms.

It is shown that very small atomic displacements of about 10-9 AA can be detected by polarisation optical methods. The idea for such an optical determination of structural motions is based on an empirical model which considers the anisotropic polarisability and the orientation of the bonds as the origin of the optical anisotropy of a crystal. The polarisabilities and some other bond parameters are determined mainly from precise measurements of birefringence. The derivation of theoretical expressions and the selection of materials is done in such a way that the experimental data exceed the number of independent bond parameters even in complex compounds. As experimental examples the bonds S-O, M-O (M=K, Rb, Cs), and O-H-O are considered in several complex sulphates and in KHCO3. Then the parameters of these bonds are used for the determination of atomic displacements induced by changes of temperature in K2SO4 and in KHSO4. In both crystals there exist some structural displacements which show no direct relation to the macroscopic thermal expansion.

Croissance de monocristaux de qualite optique de L-hydrogenomalate de lithium a partir de solutions aqueuses par refroidissement controle

From the Bragg spacings of a whole set {hkl} of equivalent lattice plances related by symmetry, the axial lengths, axial angles and the volume of the unit cell of a highly pure silicon crystal are calculated. In crystal-to-crystal comparison measurements, relative aberrations from the cubic shape in the order of ±2×10−7 are found. With an average value\(\overline {d(220)} = (192,015.558 \pm 0.018)\) fm, a volumev=(0.160193259±0.000000044) nm3 of the unit cell at 22.50°C and vacuum conditions is derived.

physica status solidi (a)Volume 71, Issue 2 p. K139-K141 Short Note Investigation of thermoelectric effects in silicon by X-ray interferometry P. Becker, P. Becker Physikalisch-Technische Bundesanstalt, Braunschweig Search for more papers by this authorH. Siegert, H. Siegert Physikalisch-Technische Bundesanstalt, Braunschweig Search for more papers by this authorL. Bliek, L. Bliek Physikalisch-Technische Bundesanstalt, Braunschweig Search for more papers by this author P. Becker, P. Becker Physikalisch-Technische Bundesanstalt, Braunschweig Search for more papers by this authorH. Siegert, H. Siegert Physikalisch-Technische Bundesanstalt, Braunschweig Search for more papers by this authorL. Bliek, L. Bliek Physikalisch-Technische Bundesanstalt, Braunschweig Search for more papers by this author First published: 16 June 1982 https://doi.org/10.1002/pssa.2210710246 Postfach 3345, D-3300 Braunschweig, FRG. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Volume71, Issue216 June 1982Pages K139-K141 RelatedInformation

From crystal to crystal comparison, thed220 lattice spacing in PERFX and WASO silicon crystals used in the only two existing absolute measurements have been found to be equal within ±2×10−7d220. This demonstrates that generic variabilities of the two crystals account only for a small part of the 1.8×10−6d220 difference in the two absolute measurements. In a new series of 336 single measurements, ourd220 value reported recently has been confirmed within ±2×10−8d220. From these results we derive the following lattice parameter for highly pure silicon single crystals:a0=(543 102.018±0.034) fm (at 22.5°C, in vacuum).

The (220) lattice plane spacing of an almost perfect crystal of silicon was measured by means of a combined scanning ($\mathrm{LLL}$) x-ray interferometer and a two-beam optical interferometer. From 170 measurements, a value ${d}_{220}=(192015.560\ifmmode\pm\else\textpm\fi{}0.012)$ fm results in vacuum at 22.50\ifmmode^\circ\else\textdegree\fi{}C. This value is smaller by $1.8\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}{d}_{220}$ than that reported by Deslattes et al. for another crystal. Generic variabilities of the two crystals account only for a part of this difference.

In the management of arterio-venous fistulas in the extremities one is confronted with technical difficulties due to the small caliber of the vessels. Excision of the abnormal segment precludes direct reanastomosis. A case is presented in which the vessel defect was bridged by microsurgical arterial interposition.