Electrons trapped on the surface of cryogenic substrates (liquid helium, solid neon or hydrogen) are an emerging platform for quantum information processing made attractive by the inherent purity of the electron environment, the scalability of trapping devices and the predicted long lifetime of electron spin states. Here we demonstrate the spatial control and detection of single electrons above the surface of liquid helium at temperatures above 1 K. A superconducting coplanar waveguide resonator is used to read out the charge state of an electron trap defined by gate electrodes beneath the helium surface. Dispersive frequency shifts are observed as the trap is loaded with electrons, from several tens down to single electrons. These frequency shifts are in good agreement with our theoretical model that treats each electron as a classical oscillator coupled to the cavity field. This sensitive charge readout scheme can aid efforts to develop large-scale quantum processors that require the high cooling powers available in cryostats operating above 1 K.

The in-plane motion of an electron on helium can couple to superconducting microwave resonators via electrical dipole coupling, offering a robust and rapid readout scheme. In previous efforts, microwave resonator designs for electrons on helium have lacked the coupling strength to reach the strong coupling regime, where coherent quantum effects outlast both electron and resonator decoherence rates. High-impedance superconducting microwave resonators offer a path to strong coupling, but integrating such resonators with electrons on helium remains an outstanding challenge. Here, we introduce a high-impedance resonator design compatible with strong coupling to electrons on helium. We fabricate and measure titanium nitride resonators with median internal quality factors of 3.9 x 105 and average impedance of 2.5 kQ, promising a sevenfold increase in coupling strength compared with standard 50-Q resonators. In addition, we develop a simplified resonator model from the capacitance matrix and sheet inductance that accurately predicts the mode frequencies, significantly simplifying the design process of future resonators for investigating quantum effects with electrons on helium.

We describe a helium source cell for use in cryogenic experiments that is hermetically sealed in situ on the cold plate of a cryostat. The source cell is filled with helium gas at room temperature and, subsequently, sealed using a cold weld crimping tool before the cryostat is closed and cooled down. At low temperatures, the helium condenses and collects in a connected experimental volume, as monitored via the frequency response of a planar superconducting resonator device sensitive to small amounts of liquid helium. This on-cryostat helium source negates the use of a filling tube between the cryogenic volumes and room temperature, thereby preventing unwanted effects such as temperature instabilities that arise from the thermomechanical motion of helium within the system. This helium source can be used in experiments investigating the properties of quantum fluids or to better thermalize quantum devices.

The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we used nitrogen-vacancy (NV) centers in diamond for wide-field magnetic imaging (with a few-mm field of view and micron-scale resolution) of magnetic fields from surface currents flowing in an APAM test device made of a P delta-doped layer on a Si substrate, a standard APAM witness material. We integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current densities, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ∼0.03 A m-1, corresponding to a smallest-detectable current in the 200μm wide APAM ribbon of ∼6μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

An in situ counted ion implantation experiment improving the error on the number of ions required to form a single optically active silicon vacancy (SiV) defect in diamond 7-fold compared to timed implantation is presented. Traditional timed implantation relies on a beam current measurement followed by implantation with a preset pulse duration. It is dominated by Poisson statistics, resulting in large errors for low ion numbers. Instead, our in situ detection, measuring the ion number arriving at the substrate, results in a 2-fold improvement of the error on the ion number required to generate a single SiV compared to timed implantation. Through postimplantation analysis, the error is improved 7-fold compared to timed implantation. SiVs are detected by photoluminescence spectroscopy, and the yield of 2.98% is calculated through the photoluminescence count rate. Hanbury-Brown-Twiss interferometry is performed on locations potentially hosting single-photon emitters, confirming that 82% of the locations exhibit single photon emission statistics.

The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with {\mu}m-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 {\mu}m-wide APAM ribbon of ~6 {\mu}A. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

Piezoelectric surface acoustic waves (SAWs) are powerful for investigating and controlling elementary and collective excitations in condensed matter. In semiconductor two-dimensional electron systems SAWs have been used to reveal the spatial and temporal structure of electronic states, produce quantized charge pumping, and transfer quantum information. In contrast to semiconductors, electrons trapped above the surface of superfluid helium form an ultra-high mobility, two-dimensional electron system home to strongly-interacting Coulomb liquid and solid states, which exhibit non-trivial spatial structure and temporal dynamics prime for SAW-based experiments. Here we report on the coupling of electrons on helium to an evanescent piezoelectric SAW. We demonstrate precision acoustoelectric transport of as little as ~0.01% of the electrons, opening the door to future quantized charge pumping experiments. We also show SAWs are a route to investigating the high-frequency dynamical response, and relaxational processes, of collective excitations of the electronic liquid and solid phases of electrons on helium.

Superfluid helium's low-loss dielectric properties, excellent thermal conductivity, and unique collective excitations make it an attractive candidate to incorporate into superconducting qubit systems. We controllably immerse a three-dimensional superconducting transmon qubit in superfluid helium-4 and measure the spectroscopic and coherence properties of the system. We find that the cavity, the qubit, and their coupling are all modified by the superfluid, which we analyze within the framework of circuit quantum electrodynamics (cQED). At at temperatures relevant to quantum computing experiments, the energy relaxation time of the qubit is not significantly changed by the presence of the superfluid, while the pure dephasing time modestly increases, which we attribute to improved thermalization of the microwave environment via the superfluid.

We report on the observation of an anomalously high attenuation of high-frequency surface acoustic waves by thin films of liquid 4He. The piezoelectric acoustic waves propagate along the surface of a lithium niobate substrate, which is coated with varying amounts of liquid helium. When the thickness of the helium layer is much larger than the wavelength of the surface acoustic wave on the substrate, its attenuation is dominated by the excitation of compressional waves into the liquid, in good agreement with theory and previous measurements. However, for sufficiently thin helium coverage, we find that the acoustic wave attenuation is significantly increased beyond that measured with the substrate submerged in bulk liquid. Possible mechanisms for this enhanced attenuation are discussed.

We report on an unconventional macroscopic field effect transistor composed of electrons floating above the surface of superfluid helium.With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems.In particular, we are able to manipulate the collective behavior of the electrons to produce a highly non-uniform, but precisely controlled, charge density to reveal a negative source-drain current.This behavior can be understood by considering the propagation of damped charge oscillations along a transmission line formed by the inhomogeneous sheet of twodimensional electrons above, and between, the source and drain electrodes of the transistor.

We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems. In particular, we are able to manipulate the collective behavior of the electrons to produce a highly non-uniform, but precisely controlled, charge density to reveal a negative source-drain current. This behavior can be understood by considering the propagation of damped charge oscillations along a transmission line formed by the inhomogeneous sheet of two-dimensional electrons above, and between, the source and drain electrodes of the transistor.