A 72 x 72 wavlength-selective crossconnect switch that is scalable to 1296 x 1296 with current technology is presented. Silica-on-silicon wavelength multiplexers with integrated monitoring tops and a MEMS micromirror array were assembled in a hybrid 3-D beam steering crossconnect having 20dB insertion loss, 100GHz channel spacing. and 30GHz passbands.

In dark-field (DF) lithography, light from the condenser illuminates the reticle at such a steep angle that non- diffracted light is lost from the system. A DF reticle contains a series of sub-resolution amplitude gratings to diffract light from the condenser into the projection lens and, thus, to precisely control the amplitude, phase and direction of light from every point on the reticle. In this paper we show how DF lithography can be used to print high- density patterns at higher contrast than is currently possible with conventional 193-nm lithography in a single exposure.

Accurate stylus control and automatic tip characterization has enabled a new level of performance from scanning probe microscopy, This technology has the potential to aid the leading edge of CD-SEM metrology and is widely applicable in processes with high-aspect-ratio structures in which wall angles and profile details are critical.

One of the fundamental requirements for reliable critical dimension measurement with a scanning probe microscope is stability of the stylus against flexing and against erosion. We report on the wear of an etched optical fiber when scanned across a variety of surfaces. The optical fiber probe tip was used in a novel scanning probe microscope employing a balance beam force sensor.

Linewidth measurements were performed on a 4X scattering with angular limitation in projection electron lithography (SCALPEL) e-beam lithography mask using the transmitted electron signal in a modified scanning electron microscope. Features as small as 0.24 μm were measured on the mask. The thin membrane mask structure that was used is found to provide sufficient transmitted signal contrast at energies ranging from 10 to 30 keV. The linewidth measurement accuracy is mostly limited by the variations in the material and not the measurement system. It is concluded that the linewidth measurement technique using transmitted electrons is suitable for the potential certification of SCALPEL mask standards.

Profilometry of high-aspect-ratio, submicron lithographic features with a scanning force microscope is possible if the instrument satisfies several requirements. The probe must be slender enough to reach into narrow holes without sacrificing stability. The force sensor must follow the surface without damaging the sample or the probe. Finally, a position monitor must measure the location of the probe. With such an instrument, high-resolution depth measurements are straightforward. Width measurements are more difficult because of the mixing of the probe shape with sidewalls, but this problem can be overcome through careful control of the probe shape. Measurements of high-aspect ratio features with a characteristic size less than 0.5 mum will be shown, and some of the distortions caused by the probe-sample interaction will be discussed.