As telecom networks increase in complexity there is a need for systems capable of manage numerous optical signals. Many of the channel-manipulation functions can be done more effectively in the optical domain. MEMS devices are especially well suited for this functions since they can offer large number of degrees of freedom in a limited space, thus providing high levels of optical integration. We have designed, fabricated and tested optical MEMS devices at the core of Optical Cross Connects, WDM spectrum equalizers and Optical Add-Drop multiplexors based on different fabrication technologies such as polySi surface micromachining, single crystal SOI and combination of both. We show specific examples of these devices, discussing design trade-offs, fabrication requirements and optical performance in each case.

A 72 x 72 wavlength-selective crossconnect switch that is scalable to 1296 x 1296 with current technology is presented. Silica-on-silicon wavelength multiplexers with integrated monitoring tops and a MEMS micromirror array were assembled in a hybrid 3-D beam steering crossconnect having 20dB insertion loss, 100GHz channel spacing. and 30GHz passbands.

In projection electron-beam systems resolution and throughput are linked through electron–electron interactions collectively referred to as space-charge effects. Hence, a detailed understanding of these effects is essential to optimizing the lithographic performance of a projection electron-beam lithography system. Although many models have been developed to describe one or more of the various aspects of the Coulomb interactions that occur in the beam, there is minimal experimental data available. We have performed a series of experimental measurements in the scattering with angular limitation projection electron-beam lithography (SCALPEL) proof-of-lithography system to characterize the space-charge effects for such an optical configuration. The results of those measurements have been compared to a combination of computer simulations and analytical models. The agreement between the models and experiments was good, within the limits of experimental error. We determined the exponent in the dependence of blur on beam current to be 1.029±0.16 (1σ), consistent with more recent models. Additionally, we comment on the use of blur modeling for system optimization.

Methods for correcting pattern placement errors found on SCALPEL™ masks are addressed. The methodology and implementation of individual membrane image placement correction is presented, showing its advantages over the global image placement correction method. Local image placement corrections are possible by the unique capability of electron projection lithography (EPL) tools to correct placement errors with electron optical components during exposure while addressing each individual mask membrane. Data of pattern placement on a series of 200 mm SCALPEL masks from different sources was collected. Within the mask set and patterning tools used, the placement errors are similar for all masks regardless of source. Local image placement corrections can reduce placement errors to less than 14 nm, which is less than the 20 nm budget allocated for 100 nm node lithography. Implementation of local image placement correction will permit EPL lithography to be ready for sub-100 nm node lithography without the need to burden existing mask writers on severely stringent pattern placement tolerances or chucking procedures.