We demonstrate multi-channel InP-based coherent transmitter and receiver photonic integrated circuits hybrid integrated with SiGe driving and amplifying electronics both capable of operating at 880 Gb/s and the transmitter alone up to 1 Th/s per wave. These hybrid assemblies demonstrate optical transmissions across a commercial line system at distances from 200 to 1400 km, with symbol rates between 66-100 GBd, utilizing 16-, 32-, and 64-QAM modulation formats. Additionally, we demonstrate a back-to-back transmission from the TxPIC assembly to a reference receiver at 100 GBd x 32QAM, a 1 This per wavelength capability.

We report InP-based coherent transmitter PICs with hybrid integrated SiGe drivers operating at 100GBd, 32QAM back-to-back (1 Tb/wave capable), and at 100GBd, 16QAM over 1400km. Coherent Tx (Rx) PICs with hybrid integrated drivers (amplifiers) operate at 66GBd, 64QAM over 200km.

We demonstrate a fully integrated multi-channel InP-based coherent transmitter photonic integrated circuits (PICs) with extended C-band tunability, operating at 33 and 44 Gbaud per channel under 16-QAM dual-polarization modulation. PICs are demonstrated integrating up to 14-channels enabling multi-Tb/s total PIC capacities.

Fully integrated monolithic, multi-channel InP-based coherent receiver PICs and transceiver modules with extended C-band tunability are described. These PICs operate at 33 and 44 Gbaud per channel under dual polarization (DP) 16-QAM modulation. Fourteen-channel monolithic InP receiver PICs show integration and data rate scaling capability to operate at 44 Gbaud under DP 16-QAM modulation for combined 4.9 Tb/s total capacity. Six channel simultaneous operation of a commercial transceiver module at 33 Gbaud is demonstrated for a variety of modulation formats including DP 16-QAM for >1.2Tbit/s aggregate data capacity.

We introduce a scalable PIC and module platform with full C-band tunability per-channel operating at 33 and 44 Gbaud per channel under 16-QAM dual-polarization mode and demonstrate transmitter and receiver integration up to 14-channels enabling multi-Tb/s total PIC capacities.

We present the development of large scale Photonic Integrated Circuits, high capacity optical module integration and their performance in a variety of data-center / metro and long-haul coherent optical link applications.

We present data for long-haul, metro, and data-center applications using large scale Photonic Integrated Circuits (PICs) packaged in high capacity optical modules.

A dual-polarization QPSK transmitter is demonstrated with a record 40 tunable distributed feedback lasers, 80 nested Mach-Zehnder-modulators, and other elements totaling over 1700 functions monolithically integrated on a single InP-based chip that is capable of delivering 2.25 Tb/s.

We demonstrate a single-chip, monolithically integrated, dual-polarization QPSK transmitter which combines over 1700 functions and is capable of delivering 2.25 Tb/s of bandwidth.

We will present state of the art performance of monolithically integrated 500 Gb/sec and 1 Tb/s coherent transmitter and receiver PICs with integrated multi-channel tunable laser arrays optimized for coherent transmission.

In this talk, we review InP-based, 10 wavelength, polarization-multiplexed quadrature phase-shift keying (PM-QPSK) transmitter and receiver photonic integrated circuits (PICs) that enable terabit coherent super-channel architecture.

2D thermoreflectance images of light-emitting diodes (LEDs) show lateral temperature variation with contact design. Thermoreflectance imaging of LEDs is quantitatively compared with standard bulk temperature measurements. Encapsulation improves heat dissipation and reduces optical reabsorption heating.

The critical coupling criteria between dielectric waveguides and lossy surface plasmons is applied to isolator designs. This framework shows that non-reciprocal plasmon-semiconductor waveguides are not achievable, and alternatives are proposed.

Resonant coupling between an Au-InP surface plasmon polariton (SPP) and an InP/InGaAsP ridge waveguide is investigated. The general design requirements for evanescent coupling between a low-loss waveguide and a highly absorptive SPP are described, and experimental results are presented for fabricated devices. Coupling from the ridge to the SPP is confirmed using fiber-to-fiber optical power measurements, and thermoreflectance imaging is used to directly measure power coupled to the SPP along the length of the metal waveguide. The role of the thin native oxide at the Au-InP interface is also explored and found to have a significant impact on coupling.

We have developed a depth-resolved confocal thermal imaging technique that is capable of measuring the temperature distribution of an encapsulated or semi-obstructed device. The technique employs lock-in charge coupled device-based thermoreflectance imaging via a Nipkow disk confocal microscope, which is used to eliminate extraneous reflections from above or below the imaging plane. We use the confocal microscope to predict the decrease in contrast and dynamic range due to an obstruction for widefield thermoreflectance, and we demonstrate the ability of confocal thermoreflectance to maintain a high contrast and thermal sensitivity in the presence of large reflecting obstructions in the optical path.

Thermal coupling in an operating vertical-cavity surface-emitting laser (VCSEL) array is investigated by using thermoreflectance microscopy to obtain two-dimensional thermal maps with very high spatial and thermal resolution. In contrast with existing techniques for estimating average cavity temperatures, thermoreflectance microscopy enables surface thermal imaging of the entire array while simultaneously resolving surface temperature distributions across individual VCSEL apertures. We quantify the significant thermal coupling between neighboring VCSELs in the array and compare the results to those obtained using the traditional technique of estimating average operating temperature of a laser cavity by monitoring the temperature- dependent shift in the lasing wavelength. A time gated wavelength shift experiment is performed to measure the thermal diffusivity of the array. We report a thermal conductivity (¿th) and thermal diffusivity (¿) for the VCSEL array of ¿th = 0.31 W/(cm·K) and ¿ = 1.47 × 10-5 m2·s-1, respectively.

We report high resolution, non-invasive, thermal and optical characterization of semiconductor optical amplifiers (SOAs) and SOA-based photonic integrated circuits (PICs) using thermoreflectance microscopy. Chip-scale temperature imaging of SOAs and PICs, along with an energy balance model, are used to calculate the optical power distribution within and between SOAs to determine optical gain, fiber coupling loss, and passive component loss under normal device operating conditions. This technique is demonstrated to map optical power in SOA-based Mach-Zehnder interferometer (SOA-MZI) PICs, with close agreement with photocurrent and fiber-coupled measurements. The use of amplified spontaneous emission (ASE) for fiber-free characterization of the PICs is also shown, enabling non-invasive, wafer-scale testing prior to packaging.

We report on the use of confocal thermoreflectance for accurate surface temperature measurement of transparent LEDs. Confocal thermoreflectance effectively suppresses light from beneath the LED surface, compared to widefield measurements, for a red GaP LED.

CCD-based thermoreflectance microscopy has emerged as a high resolution, non-contact imaging technique for thermal profiling and performance and reliability analysis of numerous electronic and optoelectronic devices at the micro-scale. This thermography technique, which is based on measuring the relative change in reflectivity of the device surface as a function of change in temperature, provides high-resolution thermal images that are useful for hot spot detection and failure analysis, mapping of temperature distribution, measurement of thermal transient, optical characterization of photonic devices and measurement of thermal conductivity in thin films. In this paper we review the basic physical principle behind thermoreflectance as a thermography tool, discuss the experimental setup, resolutions achieved, signal processing procedures and calibration techniques, and review the current applications of CCD-based thermoreflectance microscopy in various devices.