first present a PRAM with confinement of chemically vapor deposited GeSbTe (CVD GST) within high aspect ratio 50nm contact for sub 50nm generation PRAMs. By adopting confined GST, we were able to reduce the reset current below ~260μA and thermally stable CVD Ge 2 Sb 2 Te 5 compound having hexagonal phase was uniformly filled in a contact while maintaining constant composition along with 150nm depth. Our results indicate that the confined cell structure of 50nm contact is applicable to PRAM device below 50 nm design rule due to small GST size based on small contact and direct top electrode contact, reduced reset current, minimized etch damage, and low thermal disturbance effect.

For site-specific prescription of fertilizer topdressing in rice cultivation, nondestructive diagnosis of the rice growth and nutrition status is indispensable. Three experiments were carried to develop and test a model using canopy reflectance for nondestructive diagnosis of the rice growth and N status. Two experiments for model development were conducted, one in 2000 and one in 2003 at the Experimental Farm (37 degrees 16'N, 126 degrees 59'E) of Seoul National University, Suwon, Korea. The experiment included two rice varieties and four nitrogen (N) rates in year 2000 and four rice varieties and 10 nitrogen treatments in year 2003. Hyperspectral canopy reflectance (300 to I 100 nm) data recorded at various growth stages before heading were used in developing a partial least square regression (PLS) model to predict eight crop variables such as plant biomass and N nutrition status. 342 observations were split for model calibration (75%) and validation (25%). The PLS model was then tested to predict within-field spatial variation of three crop variables using hyperspectral canopy reflectance data measured for 10 x 10 m grids from a paddy field of 6500 m(2) in 2004. Coefficient of determination (R-2), root mean square of error in prediction (RMSEP) and relative error of prediction (REP) were calculated for the model quality evaluation. The results revealed that PLS using hyperspectral canopy reflectance data to predict eight plant variables in year 2000 and 2003 produced an acceptable model precision and accuracy. The model R-2 and REP ranged from 0.81 to 0.88 and 10.0 to 23.8% for calibration and 0.76 to 0.85 and 11.1 to 24.6% for validation, respectively. The model R-2 was reduced in the test data of year 2004 but the error in prediction (RMSEP and REP) was smaller. The PLS model using canopy reflectance data could be a promising method to predict within-field spatial variation of rice crop growth and N status if error sources occurring during canopy reflectance measurement were successfully controlled.

Novel small contact fabrication technologies were proposed to realize reliable high density 256Mb PRAM(phase change memory) product. Introducing the 2-step CMP (chemical mechanical polishing) process and the ring-shaped contact structure, the contact area distribution was greatly improved even at the smallest contact diameter of 50nm node. The validity of this approach was directly confirmed by the evaluation of the functionality for the fabricated 256Mbit PRAM based on 0.10/spl mu/m CMOS technology.

Fully reliable lean-free stacked capacitor, with the meshes of the supporter made Of Si3N4, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.

(Pb,La)TiO3 (PLT) and Pb(Zr,Ti)O-3 (PZT) thin films were deposited on Pt/SiO2/Si substrate by metal-organic chemical vapor deposition (MOCVD) using a solid delivery system. The domain configurations of the deposited PLT thin films were investigated, and the film with a columnar structure exhibited a very stable write/read operation for the domain memory application. Electrical properties of PLT, PZT and rf-sputter-deposited (Ba,Sr)TiO3 (BST) thin films were measured, and their conduction mechanisms were analyzed. The composition and thickness uniformity of BST thin films deposited by the low temperature MOCVD method on a patterned wafer with 0.15 mum-diameter contact holes were investigated, and complete thickness and composition uniformity were obtained especially for the case of a dome-wall-type chamber with a wall temperature of 450degreesC.

Objective: To evaluate the usefulness of power spectral analysis on fetal heart rate variability as a new diagnostic method of fetal distress. Study design: Among 76 pregnant women who underwent computerized electronic fetal monitoring and cord blood gas analysis, we divided them into three groups: normal fetus group (36); presumed distress group (26); and acidemic distress group (14). In order to perform linear analysis on the raw data of the fetal heart rate, after resampling, we performed Fourier transformation and investigated power distributions among very low frequency (VLF), low frequency (LF), high frequency (HF) bands, and autonomic balance (LF/HF). Results: The results of the spectral analysis showed that in normal fetus group, the difference in the distribution of power spectrums of VLF, LF and HF was significantly higher than in presumed distress group and acidemic distress group. In fetal distress, the LF and VLF value (less than or equal to0.0023, greater than or equal to 0.0437) were good predictors (sensitivity 97.5%, 75.0% and specificity 86.1%, 94.4%). The LF value (less than or equal to 0.0013) was a good predictor in fetal acidemia (sensitivity 97.5% and specificity 86.1%). Conclusions: A computerized spectral analysis of fetal heart rate variation is a good predictor of fetal distress, which is made automatically and objectively. (C) 2001 International Federation of Obstetrics and Gynecology. All rights reserved.

Annals of the New York Academy of SciencesVolume 928, Issue 1 p. 376-376 p38 Mitogen-activated Protein Kinase Is Involved in H2O2-induced Phospholipase D Activation in Vascular Smooth Muscle Cells Eung-Gook Kim, Eung-Gook Kim Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorEun-Young Shin, Eun-Young Shin Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorDo Sik Min, Do Sik Min Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorByoung-Hee Park, Byoung-Hee Park Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorKyung-Sun Shin, Kyung-Sun Shin Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorMin-Soo Hyun, Min-Soo Hyun Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorJi-Cheol Shin, Ji-Cheol Shin Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorHee-Yul Ahn, Hee-Yul Ahn Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorRoger J. Davis, Roger J. Davis Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorSeung-Ryul Kim, Seung-Ryul Kim Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this author Eung-Gook Kim, Eung-Gook Kim Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorEun-Young Shin, Eun-Young Shin Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorDo Sik Min, Do Sik Min Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorByoung-Hee Park, Byoung-Hee Park Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorKyung-Sun Shin, Kyung-Sun Shin Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorMin-Soo Hyun, Min-Soo Hyun Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorJi-Cheol Shin, Ji-Cheol Shin Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorHee-Yul Ahn, Hee-Yul Ahn Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorRoger J. Davis, Roger J. Davis Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this authorSeung-Ryul Kim, Seung-Ryul Kim Department of Biochemistry, College of Medicine, Chungbuk National University, Cheongju, KoreaSearch for more papers by this author First published: 25 January 2006 https://doi.org/10.1111/j.1749-6632.2001.tb05694.xRead the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat No abstract is available for this article. Volume928, Issue1HEALTHY AGING FOR FUNCTIONAL LONGEVITY: MOLECULAR AND CELLULAR INTERACTIONS IN SENESCENCEApril 2001Pages 376-376 RelatedInformation

Great importance and caution should be placed on prosthetic fitting for a paraplegic patient with an anesthetic residual limb if functional ambulation is to be achieved. The combination of paraplegia with a transfemoral amputation and radial nerve palsy is a complex injury that makes the rehabilitation process difficult. This article describes a case of L2 paraplegia with a transfemoral amputation and radial nerve palsy on the right side. Following the rehabilitation course, the patient independently walked using a walker at indoor level with a transfemoral prosthesis with ischial containment socket, polycentric knee assembly, endoskeletal shank and multiaxis foot assembly and a knee ankle foot orthosis on the sound side. The difficulties of fitting a functional prosthesis to an insensate limb and the rehabilitation stages leading to functional ambulation are reviewed.

The electrical conduction behavior of sputter-grown (Ba, Sr)TiO3(BST) thin films having IrO2 electrodes were studied under the assumption of a fully accumulated film. In the film-thickness range studied (40–80 nm), the dielectric constants and their electric field dependencies were found to be independent of the film thickness. Contrary to similar BST films grown on Pt electrodes, the leakage current density decreased with increasing film thickness at a given field. The phenomena were explained from the electric-field depression effect inside the film due to the accumulated negative space charges in the films. The leakage current conductions were controlled by the Poole–Frenkel mechanism in the low field whereas it changed to thermionic field emission in the high-field region. The dielectric constant obtained from the Poole–Frenkel fitting was approximately 300, which was in a qualitative agreement with the value obtained from the low-frequency capacitance measurement. The calculated interfacial potential-barrier height at zero volt and effective mass of electrons were 1.03 eV and 0.06m0, respectively, from the thermionic field emission fittings.

Pure and conducting RuO2 thin films were deposited on Si substrates at 250 similar to 450 degrees C using Ru(C11H19O2)(3) as a precursor by low-pressure metal-organic chemical-vapor deposition (LP-MOCVD). At a lower deposition temperature, smoother and denser RuO2 thin films were deposited. The RuO2 thin films, which were crack free, adhered well onto the substrates and showed very low resistivities around 45 similar to 60 mu Omega cm. RuO2 thin films on (Ba, Sr)TiO3/Pt/SiO2/Si showed good properties, indicating that MOCVD RuO2 thin films from Ru(C11H19O2)(3) can be applied as electrodes of high-dielectric thin films for capacitors in ultra-large-scale DRAMs.

Electrical properties of (Bs,Sr)TiO3 (BST) thin films are characterized with sputtered and metal organic chemical vapor deposited (MOCVD) Pt top electrodes. BST films with MOCVD Pt top electrodes, which were deposited using Pt(CF3COCHCOCF3)2 (Pt-HFA) as a precursor, showed less leakage current without bulged curves and a higher dielectric constant than those with sputtered Pt top electrodes. The improvement of electrical properties seems to result from the reduction of interface trap sites with the incorporation of fluorine atoms from HFA ligands.

The dielectric behavior containing the film thickness dependent dielectric constant, capacitance–voltage (C–V) variation, and the electrical conduction behavior containing the film thickness dependent current density-electric field variation of rf sputter deposited (Ba,Sr)TiO3 (BST) thin films are analyzed based on a fully depleted film and a combined Schottky-tunneling conduction model. The fact that the capacitance values in C–V increase with the increasing film thickness clearly indicates that the films are fully depleted. Also, the decreasing and nonvariant dielectric constants of the BST film on the Pt and IrO2 electrodes, respectively, with decreasing film thickness are attributed to the intrinsic interfacial layers at the interfaces with electrodes which have low dielectric constants and very small thicknesses. The increased leakage current density of a thicker film under a given electric field originates from the increased interfacial field strength due to the high space charge density in the sputtered film. The leakage current density under the electric field strength smaller than 120 kV/cm is controlled by the Schottky conduction mechanism (thermionic emission), and over that field strength, the tunneling related mechanism (thermionic field emission) is predominant. The calculated leakage current density on the basis of the combined Schottky-tunneling conduction model fits well to the measured current density at various temperatures and over a wide field range. For all the calculations, the electric field dependent dielectric constant is always taken into account. The electric field dependent dielectric constant and high defect or space charge density of the BST film make the conventional analysis of the dielectric and conduction behavior based on the classical metal/semiconductor contact theory invalid. Therefore, a more comprehensive formalism is developed to take into account the field dependent dielectric properties and high charge density of the sputter deposited BST films.

In an ordinary torus-doubling transition into chaos, the torus generated by a Hopf bifurcation period doubles into chaos by a finite number of torus doublings. A phenomenon which was not revealed in the previous torus-doubling transition into chaos near the ferroelectric phase transition of KH2PO4 crystal is observed. The crystal, implemented in a simple series RLC circuit, undergoes an ordinary torus doubling into chaos but subsequently, another torus emerges which soon develops into a second onset of chaos. This dynamical behavior is analogous to the repeated appearance of periodic windows in the period doubling of a fixed point occurring in a low-dimensional dynamical system.

The electrical conduction behaviors of sol-gel derived Pb(Zr, Ti)O3 (PZT) thin films on Pt electrodes were analyzed based on a fully depleted film, thermionic field emission, and space charge limited conduction model in the low and high electric field regions, respectively. For films having thicknesses ranging from 150 to 250 nm, no thickness-dependent variation in the dielectric constant was observed due to the relatively large thicknesses. The rather small film-thickness-dependent leakage current characteristics in the low-field region elucidates that the positive space charge density in the film is about 1018 cm−3, which is a smaller value than that of the sputter deposited (Ba, Sr)TiO3 thin films by an order of magnitude. The calculated interfacial potential barrier height and effective mass of electrons were 0.93 eV and 0.09m0, respectively. The slope larger than 2 from the log J vs log V plot in the high-field region implies that the energy level of electron traps are continuously distributed in the energy band gap.

Tag DNA polymerase from Thermus aquaticus has been shown to be very useful in a polymerase chain reaction. Taq DNA polymerase has a domain at the amino terminus (residues 1 to 290) that has 5'-3' exonuclease activity and a domain at the C-terminus that catalyzes the polymerase reaction. Taq DNA polymerase is classified into the Pol I family, which is represented by E. coli DNA polymerase I. The alignment of amino acid sequences for the 5'-3' exonuclease domains of the Pol I family DNA polymerases shows ten highly conserved carboxylic amino acids. Crystallographic studies suggested that six of the carboxylic amino acids are clustered within a 7 Angstrom radius by chelating three metal ions in the active site. Those six carboxylic residues are mutagenized to alanines in order to better understand their function. All six carboxylic residues, Asp18, Glu117, Asp119, Asp120, Asp142, and Asp144, are crucial for catalysis of 5'-3' exonuclease.