The results of studying SiO2 films implanted with 64Zn+ ions with a dose of 5 × 1016 cm–2 at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide are studied using Rutherford backscattering and time-of-flight secondary-ion mass spectrometry. The chemical state of zinc and the phase composition of the film are determined by Auger electron spectroscopy and Raman scattering. It is found that after implantation, the zinc distribution has two maxima at depths of 20 and 85 nm, and after annealing at 700°C there is a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases is formed in the sample. After annealing at 700°C, only the ZnO phase is formed in the sample, the distribution profile of which has a broadened peak at 45 nm.

The results of studying SiO2 films implanted with 64Zn ions with a dose of 5 × 1016 cm–2 at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide were studied using Rutherford backscattering and time-of-flight secondary ion mass spectrometry. The chemical state of zinc and the phase composition of the film were determined by Auger electron spectroscopy and Raman scattering. It was found that after implantation, the zinc distribution had two maxima at depths of 20 and 85 nm, and after annealing at 700°C there was a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases was formed in the sample. After annealing at 700°C, only the ZnO phase was formed in the sample, the distribution profile of which had a broadened peak at 45 nm.

In this article, we consider defect formation in hafnium oxide, which belongs tohigh-K-dielectrics and is a promising material in different areas of nano- and optoelectronics. Hafnium oxide, synthesized by the method of atomic layer deposition, usually forms with a significant oxygen deficiency and contains large number of vacancies. The oxygen vacancies characterized by photoluminescence methods. We showed that the electron-phonon interaction greatly influenced on formation of emission bands. In this case, the emission band can't identify only by the emission maximum. We need to calculate such band parameters as heat release and the energy of a purely electronic transition. This energy that can be compared with the results of theoretical calculations from the first principles. Keywords: hafnium oxide, photoluminescence, electron-phonon interaction.

This paper presents the results of studying the composition, structure, and properties of amorphous SiO x film obtained by electron beam evaporation. This film was implanted by Zn ions with energy of 40 keV and a dose of 3×10 16 /cm 2 . Then, annealing was carried out in air at temperatures from 400 to 800°C with a step of 100°C for 1 hour at each stage. It has been found that, after implantation, metal Zn nanoclusters with a size of about 10 nm are formed on the surface and in the near-surface layer of silicon oxide. During annealing, the implanted layer becomes clear, since metallic Zn gradually oxidizes to transparent phases of its oxide ZnO and silicide Zn 2 SiO 4 . After annealing at 700°C, ZnO nanoclusters and surface craters were revealed on the surface and in the subsurface layer of the SiO 2 film.

The effect on the electrical parameters of the SiON/AlGaN/GaN structures of treatment of different durations of low-energy nitrogen plasma was studied. The AlGaN surface was subjected to plasma treatment in the working chamber of the plasma-chemical deposition unit before starting the monosilane to form the SiON film. Changes in the transport properties (conductivity and mobility) of the canal and capacitive properties of the structures were evaluated. It has been experimentally shown that such treatment leads to a change in the magnitude of polarization charges both at the insulator-AlGaN interface and at the AlGaN/GaN interface. With the help of C–V measurements-in the hysteresis mode, it is shown that at the control voltage U > +4 — +5 V ), some of the channel electrons are captured at deep centers at the SiON-AlGaN interface, and with an increase in the duration of exposure to plasma time, a sharp increase is observed charge Qit, formed by electronic boundary states. The use of additional treatment with nitrogen plasma transfers work for nitride structures from the D-mode (Vth = –4 V) to the E-mode (Vth = +0.9 V).Using Auger-measurements, it was shown that plasma treatment leads to a change in the amount of oxygen in the SiON layer and in nano-regions of the barrier layer, and with an increase in the duration of plasma exposure, a sharp decrease in the amount of oxygen in these layers is observed. Also, when using plasma treatment, the redistribution of Ga and Al at the AlGaN–GaN interface i.e. in the channel area. Using Auger measurements near the SiON–AlGaN interface from the side of the insulator, the localization of nitrogen atoms chemically bonded with silicon N(Si) with the formation of a peak at the interface, the size of which increases with increasing duration of plasma exposure.

In this article, we consider defect formation in hafnium oxide, which belongs to high-K dielectrics and is a promising material in different areas of nano- and optoelectronics. Hafnium oxide, synthesized by the method of atomic layer deposition, usually forms with a significant oxygen deficiency and contains large number of vacancies. The oxygen vacancies characterized by photoluminescence methods. We showed that the electron-phonon interaction greatly influenced on formation of emission bands. In this case, the emission band can’t identify only by the emission maximum. We need to calculate such band parameters as heat release and the energy of a purely electronic transition. This energy that can be compared with the results of theoretical calculations from the first principles.

This paper presents the results of studying the composition, structure, and properties of amorphous SiO x film obtained by electron beam evaporation. This film was implanted by Zn ions with energy of 40 keV and a dose of 3·10 16 cm 2 . Then, annealing was carried out in air at temperatures from 400 to 800 o C with a step of 100 o C for 40 min at each stage. It has been found that, after implantation, metal Zn nanoclusters with a size of about 10 nm are formed on the surface and in the near-surface layer of silicon oxide. During annealing, the implanted layer becomes enlightened, since metallic Zn gradually oxidizes to transparent phases of its oxide ZnO and silicide Zn 2 SiO 4 . After annealing at 700 o C, ZnO nanoclusters and surface craters were revealed on the surface and in the subsurface layer of the SiO 2 film. Keywords: silicon oxide film, electron beam evaporation, Zn implantation, thermal oxidation, nanoclusters, ZnO.

The impurity cluster formation in 64Zn+ ion hot-implanted and subsequently thermal-oxidized Si substrates are studied. After implantation on sample surface and in sample near-surface layer, the metallic Zn clusters with the average size near 200 nm on sample surface and the clusters with size about 20 nm in a sample body were created. After annealing at 700 °C, there was transformation from metal Zn clusters to its oxide form such as ZnO(core)/Zn2SiO4(shell) on a sample surface and conservation of the metallic Zn phase in a sample body. We propose an explanation of this phenomenon by temperature dependence of the oxygen molecules diffusion in silicon body and zinc atom opposite moving to the sample surface during annealing.

High resolution Scanning Auger Electron Spectroscopy (AES) and Time-of-Flight Secondary Ion Mass-Spectrometry (ToF SIMS) were used to investigate structure and elemental composition variation of both across an array of TiO2 nanotubes (NTs) and single tube of an array. The TiO2 NT array was grown by anodic oxidation of Ti foil in fluorine-containing ethylene glycol electrolyte. It was found that the studied anodic TiO2 nanotubes have a layered structure with rather sharp interfaces. The differences in AES depth profiling results of a single tube with the focused primary electron beam (point analysis) and over an area of 75 mu m in diameter of a nanotube array with the defocused primary electron beam are discussed. Depth profiling by ToF SIMS was carried out over approximately the same size of a nanotube array to determine possible ionic fragments in the structure. The analysis results show that the combination of both mentioned methods is useful for a detailed analysis of nanostructures with complex morphology and multi-layered nature. (C) 2017 Elsevier B.V. All rights reserved.

AbstractThe results of studying the surface Si layer and precipitate formation in CZ n -Si(100) samples sequentially implanted with ^64Zn^+ ions with a dose of 5 × 10^16 cm^2 and energy of 100 keV and ^16O^+ ions with the same dose but an energy of 33 keV at room temperature so that their projection paths R _ p = 70 nm would coincide are presented. The post-implantation samples are annealed for 1 h in an inert Ar medium in the temperature range of 400–900°C with a step of 100°C. The profiles of the implanted impurities are studied by time-of-flight secondary ion mass spectrometry. The Si surface is visualized using a scanning electron microscope, while the near-surface layer is visualized with the help of maps of elements formed by Auger electron spectroscopy with profiling over depth. The ZnO(002) texture is formed in an amorphized Si layer after the implantation of Zn and O ions. ZnO(102) crystallites of 5 nm in size are found in a recrystallized single-crystalline Si layer after annealing in Ar at 700°C.

The results of studying the surface Si layer and precipitate formation in CZ n-Si(100) samples sequentially implanted with 64Zn+ ions with a dose of 5 × 1016 cm2 and energy of 100 keV and 16O+ ions with the same dose but an energy of 33 keV at room temperature so that their projection paths Rp = 70 nm would coincide are presented. The post-implantation samples are annealed for 1 h in an inert Ar medium in the temperature range of 400–900°C with a step of 100°C. The profiles of the implanted impurities are studied by time-of-flight secondary ion mass spectrometry. The Si surface is visualized using a scanning electron microscope, while the near-surface layer is visualized with the help of maps of elements formed by Auger electron spectroscopy with profiling over depth. The ZnO(002) texture is formed in an amorphized Si layer after the implantation of Zn and O ions. ZnO(102) crystallites of 5 nm in size are found in a recrystallized single-crystalline Si layer after annealing in Ar at 700°C.

In this study TiO 2 nanotubes arrays (TNTs) obtained via electrochemical anodization of Ti foil in at several electrolyte temperatures in ethylene glycol (EG) based NHtF solution and then modified by thermal annealing in vacuum chamber. Modified titania nanotube arrays chemical composition analysis was studied by AES depth profiling. The photocatalytic activity was examined under UV and visible irradiation. Methyl orange aqueous solution was used as a model water pollutant. It was found that Ti anodizing in heated EG based electrolytes leads to TiO 2 doping by carbon through entire tube wall thickness, which in turn leads to improved photocatalical properties of the modified TNT layers.

The results of studies of the surface layer of silicon and the formation of precipitates in Czochralski n-Si (100) samples implanted with 64Zn+ ions with an energy of 50 keV and a dose of 5 × 1016 cm–2 at room temperature and then oxidized at temperatures from 400 to 900°C are reported. The surface is visualized using an electron microscope, while visualization of the surface layer is conducted via profiling in depth by elemental mapping using Auger electron spectroscopy. The distribution of impurity ions in silicon is analyzed using a time-of-flight secondary-ion mass spectrometer. Using X-ray photoelectron spectroscopy, the chemical state of atoms of the silicon matrix and zinc and oxygen impurity atoms is studied, and the phase composition of the implanted and annealed samples is refined. After the implantation of zinc, two maxima of the zinc concentration, one at the wafer surface and the other at a depth of 70 nm, are observed. In this case, nanoparticles of the Zn metal phase and ZnO phase, about 10 nm in dimensions, are formed at the surface and in the surface layer. After annealing in oxygen, the ZnO · Zn2SiO4 and Zn · ZnO phases are detected near the surface and at a depth of 50 nm, respectively.

Integration of materials with a high dielectric constant into storage or gate capacitor applications requires a detailed understanding of the elemental and the phase composition behavior during calcination processes. In this work the elemental and the phase composition of Al 2 O 3 films on silicon substrates obtained technology atomic layer deposition were studied. The investigations were performed before and after samples heat at different temperatures by TOF secondary ion mass spectrometry. Comparative analysis of the elemental composition and its distribution changes at Al 2 O 3 /Si interface was carried out.

The technology of forming blanks of nanostructured membranes for MEMS devices based on alternating Si3N4/SiO2 layers with a nanometer thickness has been developed. A comprehensive study of the structure and composition of membranes using microanalysis methods based on spectroscopic ellipsometry, scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), Auger electron spectroscopy (AES), probe profilometry, and X-ray diffractometry is performed. The mechanical stress in silicon wafers with blanks of nanostructured membranes is experimentally determined.

Представлены результаты исследования приповерхностного слоя кремния и формирования преципитатов в образцах СZ n-Si(100), имплантированного ионами 64Zn+ с дозой 5·1016 см-2 с энергией 50 кэВ при комнатной температуре с последующим окислением при температурах от 400 до 900oС. Визуализация поверхности проведена с помощью электронного микроскопа, а приповерхностного слоя с профилированием по глубине с помощью картирования элементов методом оже-электронной спектрокопии. Анализ распределения примесных ионов в кремнии проводился на времяпролетном вторично-ионном масс-спектрометре. Методом рентгеновской фотоэлектронной спектроскопии исследовано химическое состояние атомов матрицы кремния и примесных атомов цинка и кислорода, а также уточнен фазовый состав имплантированного и отожженных образцов. После имплантации Zn наблюдаются два максимума его концентрации: на поверхности пластины и на глубине 70 нм, при этом на поверхности и в приповерхностном слое происходит образование наночастиц фазы металлического Zn и фазы ZnO с размером порядка 10 нм. После отжига в кислороде в Si вблизи поверхности обнаружена фаза ZnO·Zn2SiO4, а на глубине 50 нм фаза Zn·ZnO. DOI: 10.21883/FTP.2017.02.44102.8285

Разработана технология формирования заготовок наноструктурированных мембран для МЭМС- приборов на основе чередующихся слоев Si 3 N 4 /SiO 2 с нанометровыми толщинами. Проведено комплексное исследование структуры и состава мембран с применением методов микроанализа на основе спектральной эллипсометрии, растровой электронной микроскопии (РЭМ), вторичной ионной масс-спектрометрии (ВИМС), электронной ожеспектроскопии (ЭОС), зондовой профилометрии и рентгеновской дифрактометрии. Экспериментально определены механические напряжения в кремниевых пластинах с заготовками наноструктурированных мембран.