Previous studies of component degradation due to electrostatic discharges (ESD) have led to the installation of protective circuits improving the resistance of the components. These ESD protection circuits have led to other degradation phenomena. The sources of degradation are not easily identified. The phenomena involved are slow, but the energy is sufficient to degrade the component. This chapter presents a method for reproducing these phenomena due to electrical overvoltage stresses. The results obtained by simulation and experimentation of metal–oxide–semiconductor field-effect transistor (MOSFET) switching transistors in an inductive magnetic field environment are analyzed.