First principles calculations-based investigations of structural, elastic, mechanical, electronic, optical properties, thermodynamic, and thermoelectric study of lead free inverse perovskite are reported. Using various exchange correlations (WC-GGA, PBEsol, and PBE-GGA), the structural and mechanical features are explored. For , both the optimized lattice constant (5.6648 & Aring;) and the bulk modulus (34.3504 GPa) are found to be in good agreement with previous results. The structural and dynamical stability of is evaluated using Born-Huang criteria and the shear constant. Furthermore, significant analysis of the properties is conducted using ab initio molecular dynamics simulations as well. The electronic and optical properties are refined by improved WC-mBJ correction to GGA. The band gap, , and is 2.797eV, 8.312, 2.878, and 0.234 with WC-mBJ, respectively. The direct band gap nature of is confirmed from the electronic band structures. In addition, the study includes a comprehensive understanding of the thermoelectric and thermal properties of . Analysis of these properties highlights that can be a potential candidate for optoelectronic applications. To the best of our knowledge, this is the first report on the comprehensive DFT-based investigation of inverse perovskite, which reveals its coupled mechanical robustness, optoelectronic potential, and thermoelectric efficiency.

Rare-earth doping has emerged as an effective approach to regulate conductive filament dynamics and improve the reliability of resistive random-access memory (RRAM) devices. In this work, cerium-doped ZnFe₂O₄ (CZFO) thin films were fabricated using a chemical solution deposition method and integrated into Au/CZFO/Pt memory structures. X-ray photoelectron spectroscopy reveals changes in the local chemical environment and oxygen-vacancy-related features associated with cerium incorporation. Electrical measurements show that Ce doping significantly improves the resistive switching characteristics. The optimized CZFO-0.1 wt% device exhibits a reduced forming voltage (∼11 V), a stable memory window exceeding 10², and reliable endurance over 10 ³ switching cycles. Statistical analysis demonstrates improved switching uniformity with reduced variability in SET and RESET voltages. Conduction mechanism analysis reveals Ohmic transport in the low-resistance state and Schottky emission-dominated conduction in the high-resistance state. Furthermore, temperature-dependent measurements indicate metallic-like conduction in the low-resistance state and thermally activated semiconducting transport in the high-resistance state, consistent with a filamentary resistive switching process.

The development of advanced electrode materials for clean, sustainable, and high-performance next-generation energy storage technologies remains a central focus in contemporary research. In this study, a ternary BiTiO2/ NiO/r-GO nanocomposite, along with its corresponding binary BiTiO2/NiO and pristine BiTiO2 counterparts, were synthesized via a cost-effective, environmentally benign hydrothermal route followed by detailed structural, morphological, optical and electrochemical characterizations. The ternary nanocomposite demonstrated a remarkable specific capacitance of 1277 F g-1 at a current density of 1 A g-1, having excellent energy density of 86 Whkg-1 and power density of 991 W kg-1. The kinetic analysis was conducted using Dunn's model that revealed a diffusion-controlled, battery-type charge-storage behavior of BiTiO2/NiO/r-GO electrode. However, a superior electrochemical response of the BiTiO2/NiO/r-GO nanocomposite was observed compared to BiTiO2/ NiO and BiTiO2, attributed to its synergistic structural features, enhanced charge-transfer dynamics, and improved ion-storage capability. Thus, our findings provide an emerging nanocomposite as a viable candidate for energy storage applications.

Nano-devices based on two-dimensional (2D) semiconductor materials encourage the development of high-performance homogeneous junctions owing to their remarkable electronic and optoelectronic properties. Herein, we fabricated an atomically thin WSe2 (similar to 4.8 nm) lateral homojunction PN diode through the deposition of indium gallium zinc oxide (IGZO) via sputtering. Pristine WSe2 exhibited dominant p-type semiconductor behavior, while IGZO-deposited WSe2 demonstrated n-type behavior, revealing that IGZO altered the carrier polarity of WSe2 from p- to n-type. Furthermore, we investigated gate-dependent I-V curves of the lateral homojunction PN (p-WSe2/n-IGZOWSe2) diode in the dark based on a single WSe2 flake, which showed a promising current rectification ratio (similar to 1.6 x 104) and ideality factor (similar to 1.23) at VBG = -30 V, respectively. Subsequently, to explore the photodiode characteristics, we irradiated the lateral homojunction PN diode of WSe2 under ultra-violet (UV) to near-infrared (NIR) light (365, 530, and 850 nm). The I-V curves of the diode significantly changed under light irradiation, and the open circuit voltage (Voc = 202, 166, and 134 mV) and short circuit current (Isc = 320, 171, and 122 nA) values increased under illumination of a laser of small wavelength (365, 530, and 850 nm). Furthermore, we investigated the time-dependent photoresponse behavior of the diode under different laser lights. This demonstrated promising photoresponsivity (RPh = 40.1 A W-1) and external quantum efficiency (EQE = 13 634%) at lambda = 365 nm and VBG = 15 V. Hence, our lateral homojunction PN diode WSe2-IGZO/WSe2 shows great potential for next-generation electronic devices at the nanoscale level.

Advanced electronic technology significantly relies on the superior heat-conducting materials to efficiently manage the heat generated by circuit assemblies. Effective thermal management is essential to ensure the reliability, efficiency, and durability of electronic devices. The thermal conductivity (TC) of polymers can be improved by initiating several nanofillers and constructing a three-dimensional (3D) conductive path for phonon transfer. In this review, we discussed the synthesis of boron nitride (BN), the thermal characteristics of BN, and BN filler in polymer matrix for enhanced TC. It is summarized that the TC of the polymer composites could be enhanced in case when matrix is added with BN nanosheets (BNNSs) through bidirectional freezing, hot pressing, roll cutting, and making the 3D structure of reinforcement, making it suitable for the applications of electronic packaging. Also, hybrid fillers such as short carbon fiber, BN nanotubes (BNNTs), and nanosheets may construct a highly conductive path for phonon transfer. In addition, we highlighted the challenges and provided the prospects of BN nanostructures in various applications of thermal management to enhance the functional capability of equipment and electronic gadgets.

Correction for 'Broadening spectral responses and achieving environmental stability in SnS2/Ag-NPs/HfO2 flexible phototransistors' by Muhammad Farooq Khan et al., Nanoscale, 2024, 16, 3622-3630, https://doi.org/10.1039/D3NR04626E.

Coating technology has been emerged as a recognized and cost-effective approach in regard to mitigating issues that are linked to corrosion. We employed in-house synthesized boron nitride nanosheets (BNNS-CVD) and commercially available nanosized boron nitride (BN-nano) as fillers in this study to fabricate composite coatings with enhanced thermal stability and corrosion resistance. These fillers were dispersed in polydimethylsiloxane (PDMS) resin to develop composite coatings. The Fourier-transform infrared spectroscopy (FTIR), UV-visible spectroscopy, field emission scanning electron microscopy (FESEM), thermogravimetric analysis (TGA), and electrochemical impedance spectroscopy (EIS) were employed to characterize the prepared composite coatings. The FTIR analysis revealed a prominent absorption band around 1350 cm(-1) that is indication of the distinctive BN in-plane bending vibrations characteristic of boron nitride (BN). The FESEM images simultaneously confirmed the sheet-like morphology of both BN-nano and BNNS-CVD, which both found to be uniformly dispersed in the PDMS matrix. The EIS revealed that the composite films based on BNNS-CVD exhibited superior corrosion resistance compared to those based on BN-nano when exposed to a 3.5 wt% NaCl solution. Further, TGA profiles indicated that the composite films maintained their structural integrity up to 200 degree celsius without degradation. Therefore, thermally stable and corrosion resistant coatings can be valuable for various new technology applications that involve corrosion issues.

Citrus gummosis, caused by Phytophthora spp., is one of the economically critical fungal diseases prevailing in the major citrus-growing areas of the country. The fungus induces alterations in morphological and physiological parameters (leaf area, fruit weight, fruit volume, fruit length, fruit diameter, peel thickness, peel weight, rag weight, and juice weight). Therefore, the study was conducted to analyze the physical and biochemical parameters of citrus plants of various Citrus reticulata infected with phytophthora gummosis. Citrus leaves and fruits were collected to determine different morphological, physical, and biochemical parameters to compare the diseased and healthy citrus samples. There was a significant difference (P > 0.05) in physical parameters between infected and healthy citrus samples. The fruit size was significantly lower within the range of 29.1-35.4 cm(2) in the diseased plants as compared to healthy ones (37.3-43.6 cm(2)). The fruit volume of infected samples, with a maximum difference of 37.1 cm3, was also recorded in infected and healthy samples. The infected citrus samples had lower fruit weights of 111.3-145.2 g than the healthy samples (147.8-175.9 g). The leaf area was significantly less for diseased plants (11.8-20.0 cm2) compared to 17.1-29.5 cm(2) for healthy samples. Other physical parameters were also altered, but not significantly. Similarly, biochemical parameters such as TSS to Acid ratio 77.9-86.8, Total Soluble Solids 11.3-11.6%, Vitamin C 55.4-77.9 mg/100 mL, total phenolic contents 288.8-341.9, total flavonoids 210.1-240.2, antioxidant activity 655.7-749.5, and pH 3.13-3.32 were found to be significantly lowered at P > 0.05 in diseased citrus samples as compared to those in healthy citrus samples with the mean values of 101.3-109.5, 12.2-12.4%, 91.5-123.5 mg/100 mL, 3636.1-421.2, 249.7-285.6, 749.6-867.7, and 3.52-3.81, respectively. The findings of the research revealed the devastating impact of Phytophthora spp. on C. reticulata, resulting in low yield and fruit quality.

Two-dimensional (2D) materials play a crucial role as fundamental electrical components in modern electronics and optoelectronics next-generation artificial intelligent devices. This study presents a methodology for creating a laterally uniform p–n junction by using a partial oxygen plasma-mediated strategy to introduce p-type doping in single channel MoTe2 device. The MoTe2 field effect transistors (FETs) show high electron mobility of about ∼23.54 cm2 V−1 s−1 and a current ON/OFF ratio of ∼106 while p-type FETs show hole mobility of about ∼9.25 cm2 V−1 s−1 and current ON/OFF ratio ∼105 along with artificially created lateral MoTe2 p–n junction, exhibited a rectification ratio of ∼102 and ideality factor of ∼1.7 which is proximity to ideal-like diode. Thus, our study showed a diversity in the development of low-power nanoelectronics of next-generation integrated circuits.

In recent years, enormous efforts have been made to identify and manipulate the exotic electrical and magnetic properties at a two-dimensional (2D) limit of various exciting materials. The spin–orbit coupling (SOC) in 2D van der Waals (vdW) heterostructures opens a fascinating and versatile platform to implement the intriguing quantum-engineered spintronic devices for practical applications. This review comprehensively outlines the modern-era progress of investigating the inherent magnetism of atomically thin 2D materials. Firstly, in this review, the most recent developments of synthesis, characterizations, functionalities, and spin textures in 2D magnetic materials are summarized in detail. Secondly, we conferred the well-known phenomena related to the proximity effect, spin–orbit torque (SOT), spin valve magnetic tunnel junction (MTJ), spin field effect transistor (FET) and magneto memristive-based applications. In addition, we also explored the possible interplay between 2D magnetic materials and associated band topology for spin caloritronics. Finally, we provided our perspective on the recent and upcoming challenges and goals of this promising research area, which leads the 2D magnetic materials to the modern era of energy-efficient quantum computing.

The excellent physical features of two-dimensional (2D) layered materials make them very promising for electronic and optoelectronic applications. Here, we investigated the gate-tunable and broadband (220, 365, 460, 510, 840 and 1020 nm) photoresponse of MoSe2 transistor with metallic (Cr-Au/MoSe2) and van der Waals (vdWs) hetero MoSe2/WTe2 contacts. Our study intends to investigate the underlying mechanism of photogeneration and carrier's transport process by Cr-Au/MoSe2 and hetero MoSe2/WTe2 contacts in the MoSe2 transistor. Since, our research revealed that MoSe2 devices with hetero MoSe2/WTe2 contacts exhibited remarkable performance, including high responsivity (R) of about 11.23 x 105 mA/W, exceptional external quantum efficiency (EQE) of 6.3 x 105 %, and detectivity (D*) of 4.61 x 1010 Jones compared to metallic contacts. This implies that the enhanced performance of our devices with 2D hetero-contacts could be attributed to reduced contact resistance, interlayer charge transfer and interlayer excitons in MoSe2/WTe2 heterostructure. Also, the gate-controlled response and broadband capabilities of van der Waals 2D heterostructures hold significant promises for a wide range of optoelectronic applications, including photodetectors, optical sensors, and visual imaging systems.

The van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated with regard to practical applications. Recent studies on 2D materials have reignited attraction in the p-n junction, with promising potential for applications in both electronics and optoelectronics. 2D materials provide exceptional band structural diversity in p-n junction devices, which is rare in regular bulk semiconductors. In this article, we demonstrate a p-n diode based on multiheterostructure configuration, WTe2-GaTe-ReSe2-WTe2, where WTe2 acts as heterocontact with GaTe/ReSe2 junction. Our devices with heterocontacts of WTe2 showed excellent performance in electronic and optoelectronic characteristics as compared to contacts with basic metal electrodes. However, the highest rectification ratio was achieved up to ∼2.09 × 106 with the lowest ideality factor of ∼1.23. Moreover, the maximum change in photocurrent (Iph) is measured around 312 nA at Vds = 0.5 V. The device showed a high responsivity (R) of 4.7 × 104 m·AW-1, maximum external quantum efficiency (EQE) of 2.49 × 104 (%), and detectivity (D*) of 2.1 × 1011 Jones at wavelength λ = 220 nm. Further, we revealed the bipolar photoresponse mechanisms in WTe2-GaTe-ReSe2-WTe2 devices due to band alignment at the interface, which can be modified by applying different gate voltages. Hence, our promising results render heterocontact engineering of the GaTe-ReSe2 heterostructured diode as an excellent candidate for next-generation optoelectronic logic and neuromorphic computing.

van der Waals (vdW) heterostructures in two dimensions have electrical and optoelectronic characteristics that make them a suitable platform for the creation of sophisticated nanoscale electronic devices.

The decoration of Ag-NPs and passivation with HfO 2 provide a simple route to realize broadband and stable photoactivity in SnS 2 photodetectors.

The rapid advancement of artificial intelligent and information technology has led to a critical need for extremely low power consumption and excellent efficiency. The capacity of neuromorphic computing to handle large amounts of data with low power consumption has garnered a lot of interest during the last few decades. For neuromorphic applications, 2D layered semiconductor materials have shown a pivotal role due to their distinctive properties. This comprehensive review provides an extensive study of the recent advancements in 2D materials‐based neuromorphic devices especially in multiterminal synaptic devices, two‐terminal synaptic devices, neuronal devices, and the integration of synaptic and neuronal devices. Herein, a wide range of potential applications of memory, computation, adaptation, and artificial intelligence is incorporated. Finally, the limitations and challenges of neuromorphic devices based on novel 2D materials are discussed. Thus, this review aims to illuminate the design and fabrication of neuromorphic devices based on van der Waals (vdW) heterostructure materials, leveraging promising engineering techniques to excel the applications and potential of neuromorphic computing for hardware implementations.

The aim of this study is to assess the effectiveness of hexagonal boron nitride (hBN) coatings to enhance the corrosion resistance of metals as well as evaluate their crucial toxicological impacts on both the environment and human health. Organic coatings are extensively applied in the field of protecting metals against corrosion. They are preferred as corrosion inhibitors due to their carbonyl and hydroxyl group content, but they have drawbacks regarding brittleness, porosity, and oxidation susceptibility. In this review, we mainly focused on the synthesis, properties, and applications of hBN coatings and emphasized the way to improve corrosion resistance in metals and alloys. Furthermore, our discussion demonstrated that the boron nitride nanosheet (BNNS) coatings significantly improve corrosion resistance, hydrophobicity, and crack mitigation properties. The researchers achieved reduced coating porosity and enhanced protection against corrosive media by effectively dispersing BNNS in organic resin. This study also determines the protective mechanism of BNNS composite coatings against corrosion. Moreover, we addressed the impact of BBNS synthesis and its physicochemical properties on the environment and organisms. Finally, suggestions are made for future research and the sustainability of industrial use to broaden the scope of applications for BNNS composite coating.

Nanoscale photonics of atomically thin layered two-dimensional (2D) materials and their integrations have been comprehensively investigated owing to their unique electronic, mechanical, and optical properties. The prospective selection of emerging 2D materials and their van der Waals heterostructures (vdWHs) enable it to be an auspicious approach for a variety of self-driving optoelectronics. However, self-powered photodetectors (SPPDs) manifested by 2D materials MXene and perovskite have drawn considerable attention due to their massive potential for energy-efficient and cost-effective devices. In this review, to begin with, we summarized the recent innovations of SPPD architectures based on transition metal dichalcogenides (TMDCs), MXene and perovskite materials. The unique configuration of SPPDs is classified into various categories of a single material, homojunction, heterojunction, Schottky junction, and flexibility. In addition, the working principles of SPPD and their performance metrics such as detectivity, responsivity, noise equivalent power and their outstanding applications for the modern era have been demonstrated. To conclude we focused on the numerous challenges and future perspectives of this rapidly evolving research area. Overall, this review provides a comprehensive analysis of recent innovations in self-powered SPPDs made from novel materials, contributing to the diversity of the nano-photonic industry.