In this paper, the setup for the tunable cw-GaAs diode laser chip in an external cavity, which consists of stripe-array, a fast axis collimator, a grating, and a λ/2-plate, has been explained.

In this paper, we report a new compact design of an external cavity diode laser system (ECDL) to combine high output power with high brilliance emission with broad area diodes. To achieve an excellent phase coupling to the external resonator one facet of the broad area diode is unreflection coated and the other facet is high reflection coated. The very compact laser design offers an output power of up to 500 mW with a sidemode suppression ratio better than 50 dB in both longitudinal and spatial singlemode operation.

An unstable external cavity diode laser is presented with an AR-coated stripe-array diode as gain medium which yields up to 1 W with a bandwidth below 3 MHz and M 2 < 2 over the tuning range 940 nm through 980 nm.

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