Inorganic chlorine-based halide perovskites have emerged as promising materials in optoelectronics and photovoltaics due to their high electron mobility and tunable optical properties. However, traditional solution-based synthesis methods for these perovskites face significant challenges, such as poor solubility, environmental sensitivity, and scalability issues. This paper introduces an energy-efficient, environmentally friendly approach using ball-milling for room-temperature solid-state synthesis of inorganic chlorine-based halide perovskites with variable band gaps, including CsCdCl3 (4.72 eV) and mixed chlorine systems CsPbBr2Cl (2.58 eV) and CsPbCl2Br (2.40 eV). This solid-state method not only effectively overcomes the limitations of solution-based synthesis, including the need for toxic solvents and significant environmental impact, but also enables precise band gap tuning and yields materials with excellent phase control, high purity, and stability. The stability of the resulting materials was evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Vis, and photoluminescence (PL). The results show remarkable stability for up to 90 days when stored in air at room temperature. Utilizing the room-temperature solid-state approach to synthesize chlorine-based halide perovskites not only overcomes the limitations of traditional methods but also paves the way for the development of advanced optoelectronic devices.

Photonic and superconducting platforms are at the core of modern quantum technologies. However, most existing superconductors are opaque and highly absorptive. Indium-tin oxide (ITO) films reduced by electrochemical intercalation provide a promising solution for tunable superconductivity and transparency in the visible, NIR, and mid-IR optical regions. Understanding the mechanism of electrochemical reaction at the ITO surface and the dimensionality of the emerging superconducting state is a crucial step in developing devices that utilize the interaction of electromagnetic waves with a quantum state. Here we studied three routes to tune the charge density in ITO films, that might lead to the emergence of the superconducting state: doping with heterovalent atoms; electrochemical intercalation; and synthesis of oxygen-deficient ITO films. While the first does not show superconductivity at any level of doping, the second induces two-dimensional superconductivity at the ITO surface, and the third route creates three-dimensional superconductivity in bulk.

In this study, we investigate IGZO TFT reliability under different positive bias stress voltages and propose an interstitial hydrogen diffusion mechanism as a major contributor to threshold voltage (VT) shift. By combining device fabrication and measurements coupled with TCAD and density functional theory (DFT) modeling of donor and acceptor defects in the IGZO channel, the effect of these defects on device threshold voltage instability was evaluated., where the observed VT shift characteristics are attributed to interactions between diffused hydrogen atoms into the IGZO channel., and their influence on defect densities in the channel.

Metal halide perovskites are emerging as robust alternatives to traditional radiation detection materials such as amorphous selenium (a‐Se) and cadmium zinc telluride (CZT). This emergence is attributed to their high atomic number, excellent X‐ray attenuation, remarkable optoelectronic properties, and low cost. While organic‐inorganic perovskites exhibit high sensitivity, they are prone to degradation under moisture and heat. In contrast, inorganic perovskites offer enhanced environmental and thermal stability. This study presents high‐sensitivity X‐ray detectors utilizing thin‐film inorganic CsPbX 3 perovskites, which are deposited via close‐space sublimation with engineered solid‐state precursors. The band structures were characterized using Scanning Kelvin Probe, Photoelectron Spectroscopy, and UV‐Vis analysis. The devices were fabricated in the form of PN heterojunction diodes (ITO/a‐Ga 2 O 3 /CsPbX 3 /Au) and assessed through I‐V curves, dark current reproducibility, and photoresponse evaluations. Among the various halide compositions, orthorhombic CsPbBr 3 and mixed‐halide CsPbBr 2 I exhibited superior electrical and environmental stability when compared to cubic CsPbCl 3 or CsPbCl 2 Br. CsPbBr 3 achieved an X‐ray sensitivity of 130 µC Gy air −1 cm −2 at −4 V under 60 keV exposure, which is five times higher than the sensitivity exhibited by commercial a‐Se detectors (20 µC Gy air −1 cm −2 ). These findings validate CsPbBr 3 as a leading candidate for low‐voltage, high‐performance, and stable X‐ray detection.

The development of lead-free metal-halide perovskites is critical for sustainable optoelectronics, yet their synthesis mechanisms still require in-depth understanding. Thus, we investigated the room-temperature, solid-state mechanochemical synthesis of cesium antimony bromide (Cs3Sb2Br9) and cesium bismuth bromide (Cs3Bi2Br9) using high-energy planetary ball milling. Through quantitative analysis using X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS), we systematically tracked the phase evolution, reaction kinetics, and chemical stability. We find that Cs3Bi2Br9 exhibits rapid phase formation but undergoes partial decomposition upon prolonged milling, whereas Cs3Sb2Br9 forms more gradually but demonstrates superior long-term stability. These findings provide critical insights into the mechanochemical formation of lead-free halide perovskites and establish a quantitative methodology for phase tracking, offering a groundwork for optimizing solid-state synthesis routes for lead-free halide perovskites for future applications such as photodetectors, X-ray detectors, and radiation shielding.

This study explores the influence of ionic incorporation via immersion in LiCl and NaCl on the structural, morphological, and electrochemical properties of AlOOH thin films synthesized by chemical bath deposition. X-ray diffraction reveals that LiCl treatment induces the formation of lithium carbonate and aluminum hydroxide phases, a transformation absent in NaCl-treated films, which retain the pristine AlOOH structure. Scanning electron microscopy shows pronounced nanoflake growth in LiCl-treated films, while NaCl exposure yields negligible morphological changes. X-ray photoelectron spectroscopy confirms the formation of surface carbonate species in LiCl-treated samples, suggesting enhanced CO2 adsorption and conversion facilitated by Li+. Electrical characterization via current-voltage measurements indicates increased conductivity in LiCl-treated films due to Li+ mobility, contrasting with the resistive nature of NaCl-treated counterparts. Electrochemical impedance spectroscopy further supports these findings, revealing ionic diffusion behavior in LiCl-treated samples and limited ionic transport in the NaCl-treated films. These results highlight the unique role of Li+ in the modification of AlOOH thin films, yielding a room temperature ionic conductivity of 0.77 × 10-4 S cm-1, underscoring their potential for applications in ionic sensing, electrochemical storage, and gas capture technologies.

This study investigates the performance of thin film Ga 2 O 3 ‐based fin field‐effect transistors (FinFETs) built on patterned silicon substrates. The Ga 2 O 3 thin film is deposited using trimethylgallium (TMGa) ALD processes. Three devices are fabricated: one utilizing as‐deposited thin film materials, another subjected to post‐deposition annealing at 450°C, and a third annealed at 900°C. The electrical, optical, and material properties of the thin films and transistor devices are evaluated using a range of complementary characterization techniques, whilst the effects of post‐deposition annealing at moderate (450°C) and higher temperature (900°C) are also investigated. The as‐deposited device exhibited an Ion/Ioff ratio of 8.8 × 10 6 , an Ion density of 0.062 µA.µm −2 , a maximum charge carrier mobility of 3.2 cm2.V −1 s −1 , a threshold voltage (Vth) of 7.9 V, a sub‐threshold swing (SS) of 590 mV.dec −1 , and a breakdown voltage (BVDSS) of 40 V. After annealing in N 2 atmosphere, the device annealed at 450°C displayed significant improvements, with an Ion/Ioff ratio of 8.3 × 107, Ion density of 0.14 µA.µm −2 , a maximum charge carrier mobility of 8.5 cm2.V −1 s −1 , Vth of 8.5 V, SS of 475 mV.dec −1 , and a remarkable BVDSS exceeding 200 V. In contrast, the 900°C annealed sample exhibited a decrease in performance, with an Ion/Ioff ratio of 1.2 × 107, Ion density of 0.023 µA.µm −2 , mobility dropping to 1.4 cm 2 .V −1 s −1 , Vth of 9.2 V, and SS of 510 mV.dec −1 , although it maintained a breakdown voltage above 200 V. The surface morphology and materials compositions of the fabricated devices are further analyzed via a combination of scanning electron and transmission electron microscopy techniques. The obtained results confirmed a significant material transition from amorphous phase in as‐deposited films into polycrystalline morphologies with noticeable grain boundaries for samples with thermal annealing.

High-energy radiation detection is crucial in fields such as medicine, industry, security, and defense. This work demonstrates the potential of microwave-assisted synthesis for scalable and efficient perovskite-based radiation detectors requiring thick films and low thermal budgets. We discuss the synthesis and characterization of thick methylammonium lead bromide (MAPbBr(3)) films using low-temperature, time-effective, and inexpensive microwave-assisted methods. The performance of the resulting MAPbBr(3) thick films as high-energy radiation detectors, in particular X-ray radiation, is discussed. Specifically, this work systematically evaluates the impact of the microwave power and solvent composition on the resulting crystalline structure, optoelectronic properties, and morphology of the MAPbBr(3) films. Optimized films demonstrated a sensitivity of 4.5 mu CGy(- 1) cm(- 2) (photons with an energy of similar to 50 keV) under an electric field of 100 Vmm(- 1).

This paper investigates the optoelectronic properties of CsPbBr3, a lead-based perovskite, and Cs2AgBiBr6, a lead-free double perovskite, in composite thick films synthesized using mechanochemical and hot press methods, with poly(butyl methacrylate) as the matrix. Comprehensive characterization was conducted, including X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), UV–visible spectroscopy (UV–Vis), and photoluminescence (PL). Results indicate that the polymer matrix does not significantly impact the crystalline structure of the perovskites but has a direct impact on the grain size and surface area, enhancing the interfacial charge transfer of the composites. Optical characterization indicates minimal changes in bandgap energies across all different phases, with CsPbBr3 exhibiting higher photocurrent than Cs2AgBiBr6. This is attributed to the CsPbBr3 superior charge carrier mobility. Both composites showed photoconductive behavior, with Cs2AgBiBr6 also demonstrating higher-energy (X-ray) photon detection. These findings highlight the potential of both materials for advanced photodetector applications, with Cs2AgBiBr6 offering an environmentally Pb-free alternative.

This study presents a detailed analysis of total ionizing dose (TID) effects induced by X-ray irradiation on zinc oxide (ZnO) and Indium-Gallium-Zinc Oxide (IGZO) thin-film transistors (TFTs). We performed a comprehensive evaluation that includes structural, morphological, and electronic characterizations to assess the impact of X-ray irradiation on the inherent properties of metal-oxide-semiconductor layers within the TFTs. Comparative assessments following variable dose exposures provide insights into the degradation mechanisms and emphasize the differential resilience of ZnO and IGZO-based devices to radiative environments.

Lithium manganese oxide (LiMn2O4) is an effective cathode material for high-capacity lithium-ion (Li-ion) batteries. Therefore, to optimize battery efficiency, it is essential to understand how sputtering deposition conditions affect the quality and performance of LiMn2O4. This research examines how argon deposition pressure affects the stoichiometric characteristics and electrochemical performance of LiMn2O4. The study finds that changing argon deposition pressures, from a low of 5 mTorr to a high of 30 mTorr, results in the formation of different coating stoichiometries. At low argon deposition pressures, stoichiometric LiMn2O4 cathode coatings formed, exhibiting the highest discharge capacity of 115 mAh/g. Conversely, at high argon deposition pressures, non-stoichiometric LiMn2O4 with lithium deficiency was produced. These coatings exhibited diminished electrochemical behavior, achieving a discharge capacity of only 70 mAh/g at 5 mTorr. The lack of lithium resulted in a significant reduction in electrochemical performance, indicated by a high surface charge transfer resistance (R2 = 48,529 Ω), which led to a low discharge capacity of 40 mAh/g.

Cubic CsPbI 3 is a promising perovskite material for optoelectronic applications.

Lead halide perovskites have been extensively studied for their potential applications, including photodetectors, solar cells, and high-energy radiation detection. These applications are possible because of their unique optoelectronic properties, such as tunable band gap, high optical absorption coefficient, and unique defect self-healing properties, which result in high defect tolerance. Despite these advantages, the long-term stability remains a critical issue that could hinder commercial applications of these materials. Reports on the stability of lead halide perovskites for optoelectronic applications have normally focused on methylammonium (MA)/formamidinium (FA), with very limited information for other systems, in particular, Cs-containing perovskites. In this paper, we report the stability of thick CsPbBr3-xClx polycrystalline thin films (similar to 8 mu m) with several halide Br-Cl ratios after exposure to deep UV radiation. The chemical, crystal structure, optical, and electrical properties are analyzed, and the results are used to propose a degradation mechanism. The chemical analysis on the surface and bulk of the films indicates the formation of cesium oxide after UV exposure, with no significant change in the crystalline structure. The proposed mechanism explains the formation of cesium oxides during UV exposure. The I-V characteristics of diode structures also showed significant degradation after UV exposure, primarily at lower diode rectification ratios. The mechanism proposed in this paper can contribute to developing strategies to enhance the long-term stability of inorganic lead halide perovskites under UV exposure.

Graphene microflakes were deposited on a biodegradable support of coconut/agave fibers to fabricate floatable photocatalytic (FG) composites. Later, Ce0.9Bi0.1O2 (BiCeO) nanoparticles were synthesized by Pechini method and these nanoparticles with cubic phase were deposited on the FG composites. SEM images confirmed the presence of porous BiCeO nanoparticles on the surface of coconut/agave fibers. The photocatalytic performance of the FG, BiCeO powder and FG/BiCeO composites was evaluated by degrading methylene blue (MB) dye under natural solar irradiation. The MB (20 ppm) dissolved in tap water was degraded with efficiencies of 59 %, 92 % and 100 % by using the FG, BiCeO powder and FG/BiCeO composite, respectively. Moreover, the 4-CP herbicide was degraded with efficiencies of 86 % and 94 % by utilizing the BiCeO powder and the FG/BiCeO composite, respectively. In addition, scavenger experiments demonstrated that the main oxidizing agent generated for the degradation of MB and 4-CP are the superoxide anions ((A) over cap center dot O-2(-)), followed by the holes (h(+)) and (center dot OH) radicals. Also, we found that the clean water obtained with the use of the FG/BiCeO composite had the lowest content of organic carbon (21.7 %), suggesting that most of the by-products (formed during the breakage of the MB molecule) were eliminated. Overall, the results of this research demonstrate that biodegradable photocatalytic composites can be fabricated from coconut/agave fibers at low cost. Those ones are not only floatable but can also be activated with solar light. Those last characteristics could be useful for the elimination of traces of dangerous organic contaminants in water treatment plants.

Perovskite nanocrystals have excellent optical properties but suffer from environmental instability and production up-scaling which limit their commercial application. Here, we report the gram-scale ultrasound-mediated synthesis of silane passivated CsPbBr3 nanocrystals using (3-aminopropyl) triethoxysilane (APTS) as the primary surface ligand surface. The surface engineering endowed the CsPbBr3@SiOR NCs with extended environmental stability, a narrow emission bandwidth and a high photoluminescence quantum yield (PLQY > 75%). Thanks to these excellent optical properties, high-efficiency lateral and vertical photodetectors were fabricated. In particular, the layered vertical photodiode composed of ITO/Ga2O3/CsPbBr3/Au exhibited a broadband photoresponse from 350-700 nm with a responsivity peaking at 44.5.1 A W-1 and specific detectivity above 10(13) Jones when illuminated at 470 nm wavelength and biased at +5 V. These results correspond to the best-in-class performance perovskite nanocrystal PD and confirm the extraordinary potential of CsPbBr3@SiOR for the development of efficient optoelectronic devices.

Nanostructured ZnO: Nd nanoparticles (NPs) codoped with lithium at low temperature and short synthesis time were prepared using the polyol method, and the influence of different lithium contents at constant atomic concentration of Nd was evaluated. The resulting materials were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Brunauer-Emmett-Teller analysis (BET), X-ray photoelectron spectroscopy (XPS), and optical spectroscopies (photoluminescence (PL), cath-odoluminescence (CL) and Raman). X-ray diffraction patterns demonstrate that the materials are polycrystalline with a wurtzite structure with no secondary phases in the concentrations evaluated. The unit cell parameters were determined, and the crystallite size was calculated considering the three most intense diffraction peaks. TEM shows that the particles are polycrystalline with no amorphization. Raman analysis further confirms the wurtzite hexagonal structure of the particles. Morphological and size studies using SEM and TEM show that the most remarkable change is the evolution from hemispherical ZnO NPs to spindle-shaped particles for Li-Nd doped ZnO. The surface chemistry, as studied by X-ray photoelectron spectroscopy (XPS), confirms the incor-poration of Nd3+. The study of the photocatalytic behavior of the Li-Nd codoped ZnO NPs reveals that the ZNL0.5 sample exhibits the highest photocatalytic activity using a solution of Rhodamine B (2.5 ppm) as a reference.

A low-cost embedded system for high-energy radiation detection applications was developed for national security proposes, mainly to detect nuclear material and send the detection event to the cloud in real time with tracking capabilities. The proof of concept was built with state-of-the-art electronics such as an adequate Si-based photodetector, a trans-impedance amplifier, an ARM Cortex M4 microcontroller with sufficient ADC capture capabilities, an ESP8266 Internet of Things (IoT) module, an optimized Message Queuing Telemetry Transport (MQTT) protocol, a MySQL data base, and a Python handler program. The system is able to detect alfa particles and send the nuclear detection events to the CloudMQTT servers. Moreover, the detection message records the date and time of the ionization event for the tracking application, and due to a particular MQTT-optimized protocol the message is sent with low latency. Furthermore, the designed system was validated with a standard radiation instrumentation preamplifier 109A system from ORTEC company, and more than one node was demonstrated with an internet connection employing a 20,000 bits/s CloudMQTT plan. Therefore, the design can be escalated to produce a robust big data multisensor network.

Printing processes that enable printing high conductivity metals at small scale (<mm) are in demand for microelectronics, interconnects, and sensors applications. Since electrical properties of metals are controlled by their microstructure, microstructure-property relation for each process needs to be established. In the recently developed localized pulsed electrodeposition (L-PED) process, the pulsed voltage applied during metal printing allows control over the microstructure. In this article, we quantify the electrical resistivity of copper (Cu) interconnects printed by the L-PED process and correlate it with its microstructure. The results show a microstructure combined of nanotwinned (nt) grains and nanocrystalline (nc) grains, with an average grain size of 190 nm and twin thickness of similar to 8 nm to similar to 29 nm. The electrical resistivity was measured to be 8.25 mu Omega.cm, which correlates with the observed microstructure and is remarkable for a printing process with no post-processing annealing done on the printed metal.

A low-temperature and straightforward fabrication process for ZnO thin-film transistors (TFTs) with near-zero aging and negligible instability enabled by using an ultrathin oxide as a top-passivation layer is demonstrated. The process features bottom-gate top-contacts ZnO TFTs with ultrathin HfO2 or Al2O3 as passivation layers on top of the TFT followed by post-fabrication annealing (PFA). Devices with ultra-thin capping films of Al2O3 followed by a 150 °C PFA show threshold voltage shift (ΔVTH) of <1% after bias stress and negligible shift after aging. The devices show saturation threshold voltage (VTH-SAT) of 2.70 V, saturation mobilities larger than 10 cm2/V·s, and current ION/IOFF ratios >106. On the contrary, devices without nanofilm show similar performance to those with Al2O3 but show more considerable instability to aging and bias stress (ΔVTH > 5%). Also, devices with HfO2 as a capping layer shows severe instability (ΔVTH > 40%). A degradation mechanism to explain the improved aging and reliability performance is also discussed.