In this study, we combine n-type PEDOT:PSS with multilayer borophene nanosheets (BNSs) at defined weight ratios. As borophene is a material that behaves like a p -type, we observe the formation of localized p-n junctions along the organic–inorganic hybrid structures, as evidenced by current–voltage ( I-V ) curves measured in the dark and their photoconductivity behavior under specific x-ray dose rates via a medical fluoroscopy x-ray system. For instance, in the wt1% BNSs-doped structure, negative photocurrents stand out with increasing dose rates, while in the wt 10% doped structure, positive photocurrents are observed in reverse and forward biases, which are typical characteristics of photodetectors. The behavior of the open circuit voltage in reverse bias for the wt 20% doped structure as a result of high doping is also discussed. We obtain the x-ray detector parameters for the structure exhibiting more dominant photodetector behavior and present them alongside comparable, though limited, studies. These findings underscore the noteworthy interactions of organic–inorganic hybrid materials and highlight the potential of borophene as a 2D material for medical x-ray detection.

This study investigates the complex interplay between dielectric properties and the Au/(B + M-doped PVC)/n-Si (B as Brushite, CaHPO4·2H2O and M as Monetite, CaHPO4) organic interlayer within metal–polymer–semiconductor (MPS) structures. The work aims to comprehensively analyze the (B + M:PVC)′s impact on MPS dielectric, electric modulus, and conductivity properties, contributing to a deeper understanding of nanoscale materials in electronic devices. Impedance measurements of Au/n-Si Schottky structures with (B + M-doped PVC) composite interlayer were conducted across a wide range of frequencies (2 kHz-2 MHz) and voltages (− 3 V/ + 4 V). The exploration uncovers frequency–voltage dependence on crucial parameters like loss tangent (tanδ), complex permittivity (ɛ*), AC electrical conductivity (σac), and complex electrical modulus (M*). Meanwhile, capacitance–conductance (C–G/ω) measurements were utilized to derive the graphs for ɛ′, ɛ″, M′, M″, Z′, Z″, σac, and tanδ in relation to frequency and voltage variations. The interface states and polarization are effective at low and medium frequencies in both the reversal and depletion regions. In contrast, at high frequencies, the series resistance is effective only in the accumulation region. The obtained high dielectric interlayer (ɛ′ = 14.25) even at 2 kHz indicates that this organic interlayer can be successfully used in electronic devices instead of conventional insulators/oxides in terms of low cost/weight, easy performance, flexibility, high dynamic strength, and potential for energy storage applications.

To passivate interface states and enhance photocapacitive sensitivity, high-quality Poly(2-ethylhexyl acrylate) (PEHA) films were coated as an interlayer on n-Si via initiated Chemical Vapor Deposition (iCVD). Further, the iCVD technique provides a distinct advantage over conventional solution-based methods by enabling completely solvent-free and conformal film growth that preserves monomer functionality. In this study, the photodiode, photocapacitance and photoconductance characteristics of fabricated Au/PEHA/n-Si (MPS) and reference Au/n-Si (MS) diodes onto the same n-Si wafer and in the same conditions were comparatively investigated in the dark and under various illumination intensities (40-200 mW/cm2) to determine the illumination and PEHA interlayer effects on key electrical parameters and conduction mechanisms. I-V analyses performed in the dark and under illumination demonstrated that the MPS structure with PEHA interlayer increased the barrier height and prevented interface recombination, resulting in a stable Vocresponse in the device. To achieve sufficient accuracy and reliable results, impedance measurements were performed over a wide range of voltages and illuminations at 500 kHz. Experimental findings demonstrate that the PEHA interlayer effectively passivates the interface state density. Mott-Schottky analysis revealed that while the reference structure exhibited anomalies under illumination, the MPS structure showed stable barrier modulation consistent with the photovoltaic effect. Notably, the presence of the PEHA interlayer increased the photocapacitive sensitivity (Spc) by similar to 93% compared to the reference structure.

This study investigates the electrical and optoelectronic properties of undoped and Ti-doped amorphous WO3 thin films grown by the DC magnetron sputtering method and layered into ITO/WO3/Ag, ITO/W1-xTixO3/Ag, and ITO/W1-yTiyO3/Ag structures. Current-voltage (I-V) measurements were conducted in the dark and under 100 mW/cm2, with over a +/- 3 V range at room temperature. The basic electrical parameters, such as the reverse saturation current (I0), ideality factor (n), zero-bias barrier height (Phi B0), and series resistance (Rs), were calculated from several methods. Tauc analysis showed that optimal Ti doping (S2) narrowed the optical band gap from 3.10 eV to 3.07 eV by creating shallow traps within the oxide network. In the dark I-V, both S1 and S2 structures exhibited notable negative differential resistance in the reverse-bias region, which was attributed to a trap-assisted tunneling mechanism. At under 100 mW/cm2, the photon-induced trap-filling effect resulted in a massive decrease in the Rs. Optoelectronic parameters revealed that the S2 structure exhibited notable performance, achieving a photo-sensitivity (S) of 7160. With this, the responsivity (R) and specific detectivity (D*) of the structure were found to be 2.00 A/W and 5.88 & times; 1011 Jones, respectively. In contrast, high Ti doping decimated the photonic performance of the device by structurally forming deep recombination centers in the S3 (S congruent to 6.5). Furthermore, transient photoresponse measurements revealed a bias-dependent multi-state behavior, transitioning from positive photocurrent (PPC) at zero bias to an anomalous negative photocurrent (NPC) dip at moderate reverse biases, and ultimately evolving into a resistive switching state at high electric fields.

In this study, Schottky barrier diodes (SBDs) incorporating a polymer interface layer composed of 0.03 graphene (Gr): polyvinyl alcohol (PVA) were fabricated. Then, the electrical characteristics of these structures were analyzed using capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements at 1 MHz under varying beta radiation doses. The impact of radiation on their electrical characteristics was evaluated at room temperature as a function of dose. The experimental results revealed a progressive decrease in both capacitance and conductance of the Au/(0.03 Gr: PVA)/n-Si (MPS) structure with the increase in beta radiation dose. The C-V curves exhibited a distinct peak in the voltage range between -0.8 V and 1.8 V under radiation exposure, which was attributed to the unique distribution of interfacial states (N-ss) within the polymer layer and the energy gap. Furthermore, the C-G/omega-V characteristics indicated the structure's inductive behavior, which disappeared after exposure to a 10 kGy radiation dose. Analysis of the reverse-bias C-2-V plots before and after beta radiation demonstrated linearity over a broad voltage range, enabling the calculation of key parameters such as diffusion potential (V-D), donor concentration (N-D), depletion width (W-D), Fermi level (E-F), and barrier height (& Fcy;(B)). The MPS structure's interfacial state density (N-ss) before radiation (0 kGy) was determined using the high-low frequency capacitance difference method (C-HF-C-LF), and it was found to be on the order of similar to 10(13) eV(-1)cm(-3), after exposure to a beta radiation dose of 22 kGy, the interfacial state density significantly decreased to similar to 10(10) eV(-1)cm(-3), which was determined through capacitance difference analysis (C-Before -C-After). This notable reduction in N-ss was attributed to the passivation effect of the polymer interface layer (0.03 Gr: PVA). The series resistance (R-s) of the MPS structure, which was influenced by beta radiation, was evaluated using the admittance method. R-s had a more pronounced effect in the accumulation region, whereas N-ss was more significant in the depletion region. Despite the influence of beta radiation on the electrical properties, there were no substantial defects or structural distortions that could impair the performance of the Au/(0.03 Gr: PVA)/n-Si (MPS) structure. These findings suggest that Schottky barrier diodes with polymer interface layers are promising candidates for use in MPS-type detectors, and they offer a viable alternative to traditional MIS/MOS-type detectors.

This study examines the electrical and photoelectrical properties of diamond-like carbon (DLC) films, both undoped and doped with specific elements (S, N, Cu), deposited on p-Si grown by the electrochemical method. One of the key benefits of this method is its cost-effectiveness, as they do not require the use of high temperatures or vacuum systems. Herein, the experimental procedures are carried out at low voltages and room temperature. The current-voltage (I-V) and impedance-voltage (Z-V) characteristics of the four Schottky-type structures interlaid with undoped and doped-DLC (S/N/Cu-doped DLC) were probed and explained how doping affects the basic diode parameters and, consequently, the device performance. The surface state distributions (Nss) are examined through both characteristics. Moreover, the impact of illumination on photocapacitance and photoconductance is investigated under 100mW.cm-2. The presence of photoexcited charge carriers and/or trapped charges resulted in significant changes to both capacitance and conductance values. It was noted that there was a reduction in conductance values under illumination in S and N-doped DLC interlayer structures. This phenomenon is known as negative photoconductance, which is thought to be caused by trapped charges, as discussed in the literature. It was observed that doping DLC with certain elements resulted in alterations to the electrical properties of the structures, as discussed by changes to the Nss distributions and bond characteristics under illumination and electric field.

Lanthanides have significant potential for electronic technologies based on graphene quantum dots (GQDs), as they have unique electronic configurations characterized by 4f electrons. In this context, lanthanum(III) hydroxide nanoparticles (La(OH)3NPs) are used as dopants for polyethyleneimine (PEI)-doped nitrogen (N)-doped graphene quantum dots(PEIGQDsN) in this study. Using a novel green method, the La(OH)3NPs-doped PEI GQDs N nanocomposites are prepared from La(NO)3 in a single step and exploited as an interlayer in a metal/interlayer/ semiconductor (MIS) heterojunction with Au and n-Si. Capacitance & conductance-voltage (C-V & G/omega-V) characteristics of the Au/La(OH)3NPs doped PEI GQDs N /n-Si MIS heterojunction have been investigated as a function of frequency in the wide 500 Hz to 3 MHz range from-3 V to 5 V, at 300 K. It has been observed that the structure is highly sensitive to the frequency. In particular, at high frequencies, above 1.5 MHz, the positive capacitance (PC) transforms into a negative capacitance (NC) in forward bias. In addition, impedance measurements at high frequencies were carried out after the measurements in the dark, while the surface of the structure was illuminated at 100 mW/cm2. At the frequencies of 2 MHz and 3 MHz, where inductive behavior was observed, the light refilled the depleted trap levels, catalyzing the transition from NC to PC in forward bias. These findings suggest that the capacitance and conductance of the heterojunction have a remarkable frequency sensitivity, particularly evident at higher frequencies. The outcomes of this study are poised to significantly influence the comprehension of carbon-lanthanides-based electronic technology, and enable the creation of new hybrid functional materials for use in electronic or optoelectronic applications.

This study emphasizes the possible current transport mechanisms (CTMs) of the Schottky structure with Ti:DLC interlayer for a wide temperature interval (80-470 K). In the related temperature interval, the ideality factor (n) and barrier height (Phi(Bo)) values changed from 6.95 to 2.28 and 0.19 to 0.87 eV, respectively. These temperature dependent n and Phi(Bo) values show that the CTM deviates significantly from the standard TE theory and that the barrier at the metal/semiconductor interface is not homogeneous. Additionally, the observed deviation from linearity of the Richardson plot (RP) at low temperatures and obtained very low Richardson constant (A*) at higher temperatures when compared to its theoretical value are other evidence of deviation from TE theory. The observed two separate linear in the Phi(Bo)-e/2kT plot reveal the Double-Gaussian distribution (DGD) corresponding low and moderate temperature intervals. The modified RP based on the GD of the BH gives a closer to the theoretical value of A* . Along with CTM analyses, the structure's series resistance (R-S) was estimated via both Ohm's law and Cheung functions. Finally, the Card-Rhoderick method was applied to achieve the variations of the interface trap density (D-it) depending on energy for each temperature by considering voltage-dependent n and Phi(B).

The dielectric properties, electric modulus, loss tangent (tanδ), and ac conductivity of the fabricated Au/(CdTe:PVA)/n-Si (MPS) structures were investigated in wide-range frequency. By using the capacitance/conductance–voltage–frequency (C/G-V-f) measurements, the real/imaginary components of complex dielectric constant (εʹ, εʺ)/electrical modulus ($$M{\prime}$$ M ′ , $$M{\prime}{\prime}$$ M ′ ′ ), loss tangent (tanδ), and σac were calculated in wide-range frequency (2 kHz–0.7 MHZ) and voltage (± 2.5 V), and all results show that these parameters are a strong function of voltage and frequency. The observed decreases of εʹ and εʺ with increasing frequency were attributed to the existence of Nss, interlayer, and dipole polarizations. The value of εʹ was calculated as 128.38 (at 2 kHz and 2.5 V), which is quite higher than the maximum value of traditional SiO2. ln(σac)–ln(f) plot for 0.7 V shows three linear parts, indicating three different conduction mechanisms at low, intermediate, and high frequencies. These results show that the fabricated MPS structures can be successfully used instead of traditional metal–insulator–semiconductor as ultra-capacitors, which can use more electronic charges or energy.

In this study, both the Au/(pure-PVA)/n-Si (MPS-1) and Au/(CdTe:PVA)/n-Si (MPS-2) type Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After that, their electrical parameters were obtained from the current–voltage (I–V) and capacitance–voltage (C–V) measurements and compared to each other to determine the effect (CdTe:PVA) interlayer on the performance of MPS type SD. The saturation current (Is), ideality factor (n), rectification ratio (RR = Ifor./Irev.), zero-bias barrier height (ΦBo), and series/shunt resistances (Rs, Rsh) were derived utilizing I–V data. The values of Io, n, and ΦBo were found as 9.13 × 10–7 A, 11.07, 0.63 eV for MPS1 and 1.54 × 10–10 A, 3.97, 0.85 eV for MPS2, respectively. The C−2–V graphs were drawn for 0.7 MHz to obtain the doping concentration of donor atoms (ND), Fermi energy (EF), BH/(ΦB(C–V)), depletion layer width (WD), and maximum electric field (Em). The Nss − (Ec − Ess) profile for two SDs was produced from the I–V data by considering the voltage dependence of n and BH. The values of surface states (Nss) were changed between 4.8 × 1013 and 1.7 × 1014 eV−1 cm−2 for MPS1 and 5 × 1012 and 1.15 × 1013 eV−1 cm−2 for MPS2, respectively. All experimental results show that the (CdTe:PVA) interlayer significantly improved the quality of the MS type SDs rather than (pure-PVA) in terms of lower values of leakage/saturation current, n, Nss, and higher RR, BH, and Rsh when compared (pure-PVA) interlayer. The (CdTe:PVA) interlayer may be used instead of the conventional interlayer in the future.

In this study, Au/n-Si (MS) without and with (Brushite + Monetite: PVC) (MPS) organic interlayer was created on the same n-Si wafer to determine its effect on electrical parameters. The energy-dependent profile of surface states (N_ss) for two Schottky diodes (SDs) was obtained from the forward bias I–V data. Donor-atoms (N_D) , depletion-layer width (W_D), and BH(Φ_B(CV)) was calculated for 1 MHz in the dark. All these parameters of two type SDs (MS, MPS) were compared to see the effect of organic interlayer and found to be a strong function of illumination and organic interlayer. Experimental results show that the used organic interlayer at M/S interface enhanced the performance of MS SD. As a result, we can say that (Brushite + Monetite: PVC) interlayer can be successfully used to replace conventional insulators prepared by traditional techniques in terms of low-cost, high mechanical strength, flexibility, easy production, environmentally friendly, and more sensitive to illumination.

In this work, the Al/(S:DLC)/p-Si/Au Schottky structures were fabricated, and the real and imaginary parts of complex-permittivity (ε*), complex electric-modulus (M*), complex-impedance (Z*), loss-tangent (δ), electrical-conductivity (σac), and phase-angle (θ) were investigated in the wide-frequency-range of 2 kHz-2 MHz between -3.0V/4.0V. All these- factors were found to be heavily dependent on frequency and voltage because of the surface states (Nss), Maxwell-Wagner polarization, and interlayer. The voltage-dependent profile of tanδ and M'' exhibits a significant shift in peak location towards forward-bias voltages as frequency increases due to the relaxation process of the Nss and dipole polarization. The ε' was found to be 571.81 (at 2 kHz) and 59.72 (at 1 MHz). The value of ε', even at 2 kHz, is about 151.5 times higher than the maximum value of traditional SiO2 (3.8) insulators, and hence, it can be successfully used instead of insulators to store more electric charges or energy.

In this study, we have separately synthesized and characterized solutions of gadolinium (Gd)-free and Gd-doped polyethyleneimine (PEI)-functionalized graphene quantum dots (GQDs) due to the excellent properties of Gd, a rare earth element, in fluorescence and magnetic resonance imaging (MRI). The dielectric properties of Gd-free/ doped nanocomposite-based diodes have been compared using impedance spectroscopy (IS) in the frequency range from 1 kHz to 500 kHz and voltage range from -3 V to +5 V at 300 K. From our experimental results, the Gd-free diode was found to have a negative dielectric constant (e '). In contrast, the Gd-doped nanocomposite diode exhibited positive e '. The epsilon ' of the Gd-free diode is -80, while the e ' of the Gd-doped diode is 35 at 5 V for 1 kHz. The experimental results showed that the dielectric properties of both structures were strongly dependent on the applied voltage and frequency. The Gd doping in the interface has prevented the domination of loss mechanisms within the structure, eliminated negative dielectric at lower frequencies, and conferred a unique micro-capacitor characteristic to the structure. All these efforts will contribute to the development of functional carbon-based materials and the creation of new electronic devices and tunable dielectric properties.

The current conduction mechanisms (CCMs), temperature-sensitivities (S), energy-dependent interface traps (Nss), and origin of the intersection points in the forward bias (IF-VF) plots of the Al/Al2O3/Ge/p-Si heterostructure were investigated in wide temperature range of 90-420 K. Firstly, main electrical parameters, including reverse-saturation current (Io), ideality factor (n), zero-bias barrier-height (Phi Bo), and series-resistance (Rs) values, were extracted for each temperature. The lnIF-VF curves illustrate two distinct linear regimes at low and intermediate bias voltages. Despite the observed decline in n values as temperature rises, the corresponding Phi Bo values exhibit an upward trend. The conventional Richardson plots deviated from linearity at low temperatures, and the Richardson-constants (A*) value obtained from its linear part is quite lower than its theoretical value. Hence, Phi Bo- q/2 kT, Phi Bo- n, and n(kT)/q-(kT/q) correlations were plotted to seek indications of the Gaussian distribution (GD) of barrier heights (BHs) and tunneling mechanism. Temperate sensitivity (S = dV/dT) for 0.01, 0.10, 0.50, and 1 mu A was found as 2.30, 2.33, 2.34, and 2.35 mV/K, which indicated that the fabricated Al/Al2O3/ Ge/p-Si heterostructure is highly sensitive to temperature, rendering it suitable for use in temperature sensor applications. The observed crossing point at about 2.4V was explained by an increase in the apparent BH with temperature and the presence of Rs.

In this study, frequency-dependent physical parameters, voltage-dependent of surface traps/states, and their lifetime of the Au/(ZnCdS-GO:PVP)/n-Si (MPS) type structures were investigated by using conductance measurements (Y = 1/Z = G + jωC) both in wide range frequency (3 kHz-3 MHz) and voltage (from − 4.00 V to 1.50 V). Firstly, basic physical parameters such as density of doping donor atoms (ND), diffusion potential (VD), Fermi-energy (EF), barrier height ΦB(C-V), depletion-layer thickness (WD), and maximum electric field (Em) were calculated from these measurements for each frequency. These values were found as 1.69 × 1016 cm−3, 0.444 eV, 0.193 eV, 0.606 eV, 1.31 × 10−5 cm, 7.66 × 104 V/cm for 10 kHz, and 1.42 × 1016 cm−3, 0.461 eV, 0.198 eV, 0.628 eV, 1.46 × 10−5 cm, 7.80 × 104 V/cm for 3 MHz, respectively. While ND decreases with increasing frequency, the other parameters increase. The density of surface states (Nss) and their lifetimes (τ) were also obtained from conductance techniques. While the Nss were changed between 2.78 × 1012 at 0.40 V and 2.61 × 1012 eV-1cm−2 at 1.3 V, and the Nss-V curve shows two distinctive peaks which correspond to 0.5 V (2.87 × 1012 eV−1cm−2) and 1.2 V (2.68 × 1012 eV−1cm−2), respectively. The values of τ were changed between 105 µs (at 0.4 V) and 15.3 µs (at 1.3 V) and decreased with increasing voltage as exponentially. These lower values of Nss were attributed to the used (ZnCdS-GO:PVP) interlayer.

Five samples were fabricated to obtain a diode with a PVA interface, both with and without graphene doping at different rates with high rectification in the dark. The electrospinning method was employed to apply the doped and undoped solutions, creating the interlayers. Since the diode with a 1 wt % graphene-doped PVA interlayer outperformed the other samples, the main electrical and photodetector characteristics of this structure were investigated. The electrical parameters of the diode were probed by the TE, Norde, and Cheung methods, and the parameters (n and phi(B)) acquired by both approaches were significantly influenced by illumination and voltages. The interface/surface state intensity values (N-ss) were also calculated in the dark and under each illumination as a function of the band/energy gap depth (E-ss-E-v). The time-dependent steady-state conditions and rise-decay behavior of the photocurrents during illumination were also investigated. Due to the high photocurrent values, the photosensitivity at zero bias is approximately 1.4 x 10(4) at 100 mW cm(-2). The responsivity and detectivity values appear to be altered significantly with changes in the illumination and voltage. Additionally, a double logarithmic plot of I-ph vs P reveals good linearity with slope values ranging from 0.5 to 1.

In this work, Al/Al2O3/Ge/p-Si heterostructures were fabricated by e-beam thermal evaporation. The EDX (energy dispersive X-ray spectroscopy) map visually obtained the basic distribution information in a two-dimensional graph. Three-dimensional atomic Force Microscope (AFM) analysis of the roughness of the Al/Al2O3/Ge/p-Si heterostructure shows that the Al2O3 particle has approximately 4.35 nm. Quantitative analysis via histogram plots for Al2O3 interlayer grown on p-Si shows a Gaussian-like distribution, and it has a sharp profile between 0 and 2 nm on silicon, located around 1.2 nm. The current-voltage (I-V) and capacitance-conductance-voltage (C-G/omega-V) measurements were used to investigate the electrical properties of the structure at room temperature. The I-V measurements revealed two distinct linear regions, attributed to barrier inhomogeneity and distribution of interfacial state/trap densities (D-it). For this reason, we obtained D-it distributions by considering the voltage dependence of the ideality factor n(V) in two regions. Diode parameters acquired through different methods are comparatively presented with a brief literature review. Then, the C-G/omega-V measurements were conducted across a broad frequency range (from 0.3 kHz to 3 MHz), and these measurements revealed notable alterations in the electrical parameters with regard to frequency. In order to probe interface states/traps, we employed the conductance/admittance method, which provided satisfactory information about trap lifetime, following the low-high frequency (LF-HF) and Hill-Coleman methods. The effects of these states/traps on the measurements according to voltage, frequency, and energy level (E-it-E-v) are discussed in detail.

This study investigates the beta irradiation's impact on the electrical features of interfacial nanostructures composed of poly(vinyl alcohol) (PVA) doped with graphene. The integration of graphene, a 2D carbon allotrope renowned for its exceptional electrical conductivity, into PVA nanostructures holds significant promise for advanced electronic applications. Beta irradiation, as a controlled method of introducing radiation, offers a unique avenue to modulate the properties of these nanostructures. Therefore, this study examines the Au/3% graphene(Gr)-doped PVA/n-type Si structure with and without beta (beta) radiation. The effect of beta radiation on the electrical properties of the Au/3% graphene(Gr)-doped PVA/n-type Si structure has been researched by utilizing the current-voltage (I-V) data. The studied structures were exposed to a Sr-90 beta-ray source at room temperature to show the effect of beta radiation. The series resistance (R-s), shunt resistance (R-sh), ideality factor (n), barrier height (BH) (Phi(B0)), and saturation current (I-o) were computed using the I-V data after Sr-90 beta-ray irradiation (0, 6, and 18 kGy) and before using the thermionic emission, Norde, and Cheung methods. The BH, ideality factor, and series resistance were calculated using the I-V data as follows: 0.888 eV, 3.21, and 5.25 k Omega for 0 kGy; 0.782 eV, 5.30, and 3.47 for 6 kGy; 0.782 eV, 5.46, and 2.63 k Omega for 18kGy. The BH, ideality factor, and series resistance were also calculated using the Cheng Methods, and the following results were found respectively: 7.22, 0.74, and 3.97 k Omega (Cheng I), and 3.22 k Omega (Cheng II) for 0 kGy; 5.14, 0.813, and 2.72 k Omega (Cheng I), and 2.14 k Omega (Cheng II) for 6 kGy; 6.78, 0.721, and 1.96 k Omega (Cheng I), 1.64 k Omega (Cheng II) for 18 kGy. The BH and series resistance were defined as 0.905 and 16.12 k Omega for 0 kGy, 0.859 and 5.31 k Omega for 6 kGy, and 0.792 and 2.49 k Omega for 18 kGy, respectively. Interface states density (N-ss) as a function of E-c-E-ss was also attained by taking into account the voltage dependence of n, Phi(B), and R-s. Experimental results showed that the values of n and N-ss increased with an increase in the beta-ray radiation dose. On the other hand, the saturation current (I-o), Phi(B0), and R-s values decreased with the increase in the beta-ray radiation dose. The obtained results indicate a nuanced interplay between beta irradiation dose and the nanostructure's overall electrical properties. Insights gained from this study contribute to the understanding of radiation-induced effects on graphene-doped polymer nanostructures, providing valuable information for optimizing their performance in electronic applications.

Lanthanides are largely used in optoelectronics as dopants to enhance the physical and optical properties of semiconducting devices. In this study, lanthanum(III)hydroxide nanoparticles (La(OH)3NPs) are used as a dopant of polyethylenimine (PEI)-functionalized nitrogen (N)-doped graphene quantum dots (PEI-NGQDs). The La(OH)3NPs-dopedPEI-NGQDs nanocomposites are prepared from La(NO)3 in a single step by a green novel method and are characterized by Fourier-transform infrared spectroscopy (FT-IR), ultraviolet-visible spectroscopy (UV-vis), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Deposited over an n-type Si wafer, the La(OH)3NPs-dopedPEI-NGQDs nanocomposites form Schottky diodes. The I-V characteristics and the photoresponse of the diodes are investigated as a function of the illumination intensity in the range 0-110 mW cm-2 and at room temperature. It is found that the rectification ratio and ideality factor of the diode decrease, while the Schottky barrier and series resistance increase with the enhancing illuminations. As a photodetector, the La(OH)3NPs-dopedPEI-NGQDs/n-Si heterojunction exhibits an appreciable responsivity of 3.9 × 10-3 AW-1 under 22 mW cm-2 at -0.3 V bias and a maximum detectivity of 8.7 × 108 Jones under 22 mW cm-2 at -0.5 V. This study introduces the green synthesis and presents the structural, electrical, and optoelectronic properties of La(OH)3NPs-dopedPEI-NGQDs, demonstrating that these nanocomposites can be promising for optoelectronic applications.

Carbon, especially graphene quantum dots (GQDs) based electronics have become an attractive technology in recent years. The controlled modification of the electrical and optoelectronic properties of GQDs by physical/chemical processes or synthetic methods may lead to new applications. Gadolinium‐doped polyethyleneimine (PEI) functionalized and nitrogen‐doped graphene quantum dots (GdNPs‐PEI@N‐GQDs) are synthesized by a hydrothermal method to determine how doping carbon‐based materials with Gd alters the electrical properties of the structure. The electrical properties of the GdNPs/PEI@N‐GQDs nanocomposite‐based diode are investigated using the current–voltage ( I– V ) technique and the capacitance and conductance voltage ( C– V & G / ω– V ) technique at 300 K in the frequency range of 0.5 to 500 kHz at ± 5 V. The rectification ratio (RR) is found to be 14 at a voltage of ±5 V. The rectifying behavior of the diode changes to an ohmic behavior after doping with Gd, compared to the Gd‐free PEI@N‐GQDs sample (2.8 × 10 4 at ±5 V). The results are expected to have an impact on the understanding of carbon‐based electronics technology.