NiPS3 is an exfoliable van der Waals intralayer antiferromagnet with a zigzag-type spin arrangement. It is distinct from other TMPS3 (TM: transition metal) materials by optical excitations into a strongly correlated state that is tied to the magnetic properties. However, the related fundamental band structure across the antiferromagnetic phase transition has not been probed yet. Here, we use angular-resolved photoelectron spectroscopy with μm resolution in combination with DFT + U calculations for that purpose. We identify a characteristic band shift across the TN. It is attributed to bands of mixed Ni and S character related to the superexchange interaction of the Ni 3t2g orbitals. Moreover, we find a structure above the valence band maximum with little angular dispersion that could not be reproduced by the calculations. The discrepancy suggests the influence of many-body interactions beyond the DFT + U approximations, in striking contrast to the results on MnPS3 and FePS3, where these calculations were sufficient for an adequate description.

Magnetic 2D materials enable novel tuning options of magnetism. As an example, the van der Waals material FePS3, a zigzag-type intralayer antiferromagnet, exhibits very strong magnetoelastic coupling due to the different bond lengths along different ferromagnetic and antiferromagnetic coupling directions enabling elastic tuning of magnetic properties. The likely cause of the length change is the intricate competition between direct exchange of the Fe atoms and superexchange via the S and P atoms. To elucidate this interplay, we study the band structure of exfoliated FePS3 by mu m scale ARPES (Angular Resolved Photoelectron Spectroscopy), both, above and, for the first time, below the Neel temperature TN. We find three characteristic changes across TN. They involve S 3p-type bands, Fe 3d-type bands and P 3p-type bands, respectively, as attributed by comparison with density functional theory calculations (DFT+U). This highlights the involvement of all the atoms in the magnetic phase transition providing independent evidence for the intricate exchange paths.

Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns, such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by nonlocal transport experiments and mapping of the Poiseuille profile. Herein, we probe the current-induced surface potential maps of graphene field-effect transistors with moderate mobility using scanning probe microscopy at room temperature. We discover micrometer-sized large areas appearing close to charge neutrality that show current-induced electric fields opposing the externally applied field. By estimating the local scattering lengths from the gate dependence of local in-plane electric fields, we find that electron-electron scattering dominates in these areas as expected for viscous flow. Moreover, we suppress the inverted fields by artificially decreasing the electron-disorder scattering length via mild ion bombardment. These results imply that viscous electron flow is omnipresent in graphene devices, even at moderate mobility.

Mn-rich MnSb$_2$Te$_4$ is a ferromagnetic topological insulator with yet the highest Curie temperature T_C = 45-50 K. It exhibits a magnetic gap at the Dirac point of the topological surface state that disappears above T_C. By scanning tunneling spectroscopy, we probe this gap at different magnetic fields and temperatures. We firstly reveal that the gap size shrinks, when an in-plane magnetic field of up to B = 3 T is applied, but does not close completely as the magnetization is only partially rotated in-plane. This corroborates the magnetic origin of the gap and the complex magnetic structure. In addition, we demonstrate significant spatiotemporal fluctuations of the gap size at temperatures as low as T_C/2, above which the remanent magnetization indeed decays. This temperature is close to the antiferromagnetic transition temperature observed for bulk-type single crystals of MnSb$_2$Te$_4$, highlighting the important role of competing magnetic orders in the formation of the favorable ferromagnetic topological insulator. Our study, thus, provides crucial insights into the complex magnetic gap opening of topological insulators that is decisive for quantum anomalous Hall devices.

Ferromagnetic topological insulators have been used to demonstrate the quantum anomalous Hall effect for edge channel spintronics and quantum Hall based metrology. In conjunction with superconductors, they could host chiral Majorana zero modes which are among the contenders for the realization of topological qubits. Recently, it was discovered that the stable 2+ state of Mn enables the formation of intrinsic magnetic topological insulators with A1B2C4 stoichiometry, however, the first representative, MnBi2Te4, is antiferromagnetic with 25 K Neel temperature and strongly n-doped. Here, we show that p-type MnSb2Te4, previously considered topologically trivial, overcomes these limitations. It is (i) ferromagnetic with high Curie tem perature of 45-50 K, (ii) displays out-of-plane magnetic anisotropy, is (iii) a robust topological insulator in ab initio band structure calculations even when considering magnetic disorder, provides (iii) a Dirac point of the topological surface state close to the Fermi level with out-of-plane spin polarization as shown by photoelectron spectroscopy, exhibits (iv) a magnetically induced band gap of ~17 meV that closes at the Curie temperature as demonstrated by scanning tunneling spectroscopy, and displays (v) a critical exponent of magnetization beta~1, indicating the vicinity of a quantum critical point. We identify the crucial influences of lattice constant and structural and magnetic disorder that render MnSb2Te4 the ideal counterpart to MnBi2Te4 for tuning electric and magnetic properties of quantum anomalous Hall systems.

The contributions of surface science methods to discover and improve 3D topological insulator materials are reviewed herein, illustrated with examples from the authors’ own work. In particular, it is demonstrated that spin‐polarized angular‐resolved photoelectron spectroscopy is instrumental to evidence the spin‐helical surface Dirac cone, to tune its Dirac point energy toward the Fermi level, and to discover novel types of topological insulators such as dual ones or switchable ones in phase change materials. Moreover, procedures are introduced to spatially map potential fluctuations by scanning tunneling spectroscopy and to identify topological edge states in weak topological insulators.

Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect, which is potentially useful for high‐precision metrology, edge channel spintronics, and topological qubits. The stable 2+ state of Mn enables intrinsic magnetic topological insulators. MnBi2Te4 is, however, antiferromagnetic with 25 K Néel temperature and is strongly n‐doped. In this work, p‐type MnSb2Te4, previously considered topologically trivial, is shown to be a ferromagnetic topological insulator for a few percent Mn excess. i) Ferromagnetic hysteresis with record Curie temperature of 45–50 K, ii) out‐of‐plane magnetic anisotropy, iii) a 2D Dirac cone with the Dirac point close to the Fermi level, iv) out‐of‐plane spin polarization as revealed by photoelectron spectroscopy, and v) a magnetically induced bandgap closing at the Curie temperature, demonstrated by scanning tunneling spectroscopy (STS), are shown. Moreover, a critical exponent of the magnetization β ≈ 1 is found, indicating the vicinity of a quantum critical point. Ab initio calculations reveal that Mn–Sb site exchange provides the ferromagnetic interlayer coupling and the slight excess of Mn nearly doubles the Curie temperature. Remaining deviations from the ferromagnetic order open the inverted bulk bandgap and render MnSb2Te4 a robust topological insulator and new benchmark for magnetic topological insulators.

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor–liquid–solid process. The gates are separated from the nanowire by an exfoliated 35 nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate-induced quantum dot exhibiting a charging energy of ∼2.5 meV and orbital excitation energies up to 0.3 meV. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only 60 μeV between upward and downward sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing a potential fluctuation of ∼1 μeV/Hz at 1 Hz. This makes h-BN a dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III–V nanowires. The extracted values are similar to state-of-the-art quantum dots within Si/SiGe and Si/SiO2 systems.

Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band structure. Here, we employ photoelectron spectroscopy to map the relevant bands for metastable, epitaxial GeSbTe films. The constant energy surfaces of the valence band close to the Fermi level are hexagonal tubes with little dispersion perpendicular to the (111) surface. The electron density responsible for transport belongs to the tails of this bulk valence band, which is broadened by disorder, i.e., the Fermi level is 100 meV above the valence band maximum. This result is consistent with transport data of such films in terms of charge carrier density and scattering time. In addition, we find a state in the bulk band gap with linear dispersion, which might be of topological origin.

We present a mask aligner driven by three piezomotors which guides and aligns a SiN shadow mask under capacitive control towards a sample surface. The three capacitors for read out are located at the backside of the thin mask such that the mask can be placed at a μm distance from the sample surface, while keeping it parallel to the surface, without touching the sample by the mask a priori. Samples and masks can be exchanged in-situ and the mask can additionally be displaced parallel to the surface. We demonstrate an edge sharpness of the deposited structures below 100 nm, which is likely limited by the diffusion of the deposited Au on Si(111).

J. Kellner, G. Bihlmayer, V. L. Deringer3,∗ M. Liebmann, C. Pauly, A. Giussani4,† J. E. Boschker, R. Calarco, R. Dronskowski, and M. Morgenstern1‡ II. Physikalisches Institut B and JARA-FIT, RWTH Aachen University, D-52074 Aachen, Germany Peter Grünberg Institute and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, D-52428 Jülich, Germany Institute of Inorganic Chemistry, RWTH Aachen University, D-52074 Aachen, Germany and Paul Drude Institut für Festkörpelektronik Berlin, D-10117 Berlin, Germany (Dated: September 28, 2017)

II. Institute of Physics B and JARA-FIT, RWTH Aachen University, 52074 Aachen, Germany Facultad de Ciencias, Universidad Autónoma de Baja California, Apartado Postal 1880, 22800 Ensenada, Baja California, México. Dahlem Center for Complex Quantum Systems and Institut für Theoretische Physik, Freie Universität Berlin, 14195 Berlin, Germany Institut für Physik, Johannes Gutenberg-Universität, 55099 Mainz, Germany Instituto de Física, Universidade Federal Fluminense, Niterói, 24210-340 Rio de Janeiro, Brazil Institute for Theoretical Physics II, University of Erlangen-Nüremberg, 91058 Erlangen, Germany Physics and Materials Science Research Unit, University of Luxembourg, L-1511 Luxembourg, Luxembourg Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, 45701 Ohio, USA Instituto Politécnico, Universidade do Estado do Rio de Janeiro, 28625-570 Nova Friburgo, branchzil. School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom corresponding author: mmorgens@physik.rwth-aachen.de

The inversion layer of p-InSb(110) obtained by Cs adsorption of 1.8% of a monolayer is used to probe the Landau level wave functions within smooth potential valleys by scanning tunneling spectroscopy at 14 T. The nodal structure becomes apparent as a double peak structure of each spin polarized first Landau level, while the zeroth Landau level exhibits a single peak per spin level only. The real space data show single rings of the valley-confined drift states for the zeroth Landau level and double rings for the first Landau level. The result is reproduced by a recursive Green function algorithm using the potential landscape obtained experimentally. We show that the result is generic by comparing the local density of states from the Green function algorithm with results from a well-controlled analytic model based on the guiding center approach.

Scanning tunneling spectroscopy results probing the electronic properties of graphene quantum dots are reviewed. After a short summary of the study of squared wave functions of graphene quantum dots on metal substrates, we firstly present data where the Landau level gaps caused by a perpendicular magnetic field are used to electrostatically confine electrons in monolayer graphene, which are probed by the Coulomb staircase revealing the consecutive charging of a quantum dot. It turns out that these quantum dots exhibit much more regular charging sequences than lithographically confined ones. Namely, the consistent grouping of charging peaks into quadruplets, both, in the electron and hole branch, portrays a regular orbital splitting of about 10meV. At low hole occupation numbers, the charging peaks are, partly, additionally grouped into doublets. The spatially varying energy separation of the doublets indicates a modulation of the valley splitting by the underlying BN substrate. We outline that this property might be used to eventually tune the valley splitting coherently. Afterwards, we describe graphene quantum dots with multiple contacts produced without lithographic resist, namely by local anodic oxidation. Such quantum dots target the goal to probe magnetotransport properties during the imaging of the corresponding wave functions by scanning tunneling spectroscopy.

We present the design and calibration measurements of a scanning tunneling microscope setup in a 3He ultrahigh-vacuum cryostat operating at 400 mK with a hold time of 10 days. With 2.70 m in height and 4.70 m free space needed for assembly, the cryostat fits in a one-story lab building. The microscope features optical access, an xy table, in situ tip and sample exchange, and enough contacts to facilitate atomic force microscopy in tuning fork operation and simultaneous magneto-transport measurements on the sample. Hence, it enables scanning tunneling spectroscopy on microstructured samples which are tuned into preselected transport regimes. A superconducting magnet provides a perpendicular field of up to 14 T. The vertical noise of the scanning tunneling microscope amounts to 1 pmrms within a 700 Hz bandwidth. Tunneling spectroscopy using one superconducting electrode revealed an energy resolution of 120 μeV. Data on tip-sample Josephson contacts yield an even smaller feature size of 60 μeV, implying that the system operates close to the physical noise limit.

Scanning tunneling microscopy (STM) and spectroscopy (STS) in combination with density functional theory (DFT) calculations are employed to study the surface and subsurface properties of the metastable phase of the phase-change material Ge2Sb2Te5 as grown by molecular beam epitaxy. The (111) surface is covered by an intact Te layer, which nevertheless permits the detection of the more disordered subsurface layer made of Ge and Sb atoms. Centrally, we find that the subsurface layer is significantly more ordered than expected for metastable Ge2Sb2Te5. First, we show that vacancies are nearly absent within the subsurface layer. Secondly, the potential fluctuation, tracked by the spatial variation of the valence band onset, is significantly less than expected for a random distribution of atoms and vacancies in the subsurface layer. The strength of the fluctuation is compatible with the potential distribution of charged acceptors without being influenced by other types of defects. Thirdly, DFT calculations predict a partially tetrahedral Ge bonding within a disordered subsurface layer, exhibiting a clear fingerprint in the local density of states as a peak close to the conduction band onset. This peak is absent in the STS data implying the absence of tetrahedral Ge, which is likely due to the missing vacancies required for structural relaxation around the shorter tetrahedral Ge bonds. Finally, isolated defect configurations with a low density of 10-4nm-2 are identified by comparison of STM and DFT data, which corroborates the significantly improved order in the epitaxial films driven by the buildup of vacancy layers.

Suspended graphene is difficult to image by scanning probe microscopy due to the inherent van der Waals and dielectric forces exerted by the tip, which are not counteracted by a substrate. Here, we report scanning tunneling microscopy data of suspended monolayer graphene in constant-current mode, revealing a surprising honeycomb structure with amplitude of 50-200 pm and lattice constant of 10-40 nm. The apparent lattice constant is reduced by increasing the tunneling current I, but does not depend systematically on tunneling voltage V or scan speed v(scan). The honeycomb lattice of the rippling is aligned with the atomic structure observed on supported areas, while no atomic corrugation is found on suspended areas down to the resolution of about 3-4 pm. We rule out that the honeycomb structure is induced by the feedback loop using a changing vscan, that it is a simple enlargement effect of the atomic lattice, as well as models predicting frozen phonons or standing phonon waves induced by the tunneling current. Although we currently do not have a convincing explanation for the observed effect, we expect that our intriguing results will inspire further research related to suspended graphene.

Compound Bi14Rh3I9 consists of ionic stacks of intermetallic [(Bi4Rh)3I](2+) and insulating [Bi2I8](2-) layers and has been identified to be a weak topological insulator. Scanning tunneling microscopy revealed the robust edge states at all step edges of the cationic layer as a topological fingerprint. However, these edge states are found 0.25 eV below the Fermi level, which is an obstacle for transport experiments. Here, we address this obstacle by comparing results of density functional slab calculations with scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy. We show that the n-type doping of the intermetallic layer is intrinsically caused by the polar surface and is well-screened toward the bulk. In contrast, the anionic "spacer" layer shows a gap at the Fermi level, both on the surface and in the bulk; that is, it is not surface-doped due to iodine desorption. The well-screened surface dipole implies that a buried edge state, probably already below a single spacer layer, is located at the Fermi level. Consequently, a multilayer step covered by a spacer layer could provide access to the transport properties of the topological edge states. In addition, we find a lateral electronic modulation of the topologically nontrivial surface layer, which is traced back to the coupling with the underlying zigzag chain structure of the spacer layer.

Scanning tunnelling spectroscopy provides access to the spatial variations in the strength of Rashba spin–orbit coupling in a two-dimensional electron system, with local fluctuations shown to cause spin dephasing. As the Rashba effect is an electrically tunable spin–orbit interaction1, it could form the basis for a multitude of applications2,3,4, such as spin filters3, spin transistors5,6 and quantum computing using Majorana states in nanowires7,8. Moreover, this interaction can determine the spin dephasing9 and antilocalization phenomena in two dimensions10. However, the real space pattern of the Rashba parameter, which critically influences spin transistors using the spin-helix state6,11,12 and the otherwise forbidden electron backscattering in topologically protected channels13,14, is difficult to probe. Here, we map this pattern down to nanometre length scales by measuring the spin splitting of the lowest Landau level using scanning tunnelling spectroscopy. We reveal strong fluctuations correlated with the local electrostatic potential for an InSb inversion layer with a large Rashba coefficient (∼1 eV Å). This type of Rashba field mapping enables a more comprehensive understanding of its fluctuations, which might be decisive towards robust semiconductor-based spintronic devices.

Received 22 November 2016DOI:https://doi.org/10.1103/PhysRevB.94.219902©2016 American Physical SocietyPhysics Subject Headings (PhySH)Research AreasLattice dynamicsMechanical & acoustical propertiesMechanical deformationThermal conductivityCondensed Matter, Materials & Applied Physics