Magnetic topological insulators can host chiral 1D edge channels at zero magnetic field, when a magnetic gap opens at the Dirac point in the band structure of 2D topological surface states, lead- ing to the quantum anomalous Hall effect in ultra-thin nanostructures. For thicker nanostructures, quantization is severely reduced by the co-existence of edge states with other quasi-particles, usually considered as bulk states. Yet, surface states also exist above the magnetic gap, but it remains difficult to identify electronic subbands by electrical measurements due to strong disorder. Here we unveil surface states in MnBi2Te4 nanostructures, using magneto-transport in very-high magnetic fields up to 55 T, giving evidence of Shubnikov-de-Haas oscillations above 40 T. A detailed analysis confirms the 2D nature of these quantum oscillations, thus establishing an alternative method to photoemission spectroscopy for the study of topological surface states in magnetic topological insulators, using Landau level spectroscopy.

Inkjet-printing of graphene, iGr, provides an alternative route for the fabrication of highly conductive and flexible graphene films for use in devices. However, the contribution of quantum phenomena associated with 2D single layer graphene, SLG, to the charge transport in iGr is yet to be explored. Here, the first magneto-transport study of iGr in high magnetic fields up to 60 T is presented. The observed quantum phenomena, such as weak localization and negative magnetoresistance, are strongly affected by the thickness of the iGr film and can be explained by a combination of intra- and inter-flake classical and quantum charge transport. The quantum nature of carrier transport in iGr is revealed using temperature, electric field, and magnetic field dependences of the iGr conductivity. These results are relevant for the exploitation of inkjet deposition of graphene, which is of particular interest for additive manufacturing and 3D printing of flexible and wearable electronics. It is shown that printed nanostructures enable ensemble averaging of quantum interference phenomena within a single device, thereby facilitating comparison between experiment and underlying statistical models of electron transport.

The interplay between dimensionality and various phases of matter is a central inquiry in condensed matter physics. New phases are often discovered through spontaneously broken symmetry. Understanding the dimensionality of superconductivity in the high-temperature cuprate analogue $-$ layered nickelates and revealing a new symmetry-breaking state are the keys to deciphering the underlying pairing mechanism. Here, we demonstrate the highly-tunable dimensionality and a broken rotational symmetry state in the superconductivity of square-planar layered nickelates. The superconducting state, probed by superconducting critical current and magnetoresistance within superconducting transition under direction-dependent in-plane magnetic fields, exhibits a $C_2$ rotational symmetry which breaks the $C_4$ rotational symmetry of the square-planar lattice. Furthermore, by performing detailed examination of the angular dependent upper critical fields at temperatures down to 0.5 K with high-magnetic pulsed-fields, we observe a crossover from two-dimensional to three-dimensional superconducting states which can be manipulated by the ionic size fluctuations in the rare-earth spacer layer. Such a large degree of controllability is desired for tailoring strongly two/three-dimensional superconductors and navigating various pairing landscapes for a better understanding of the correlation between reduced dimensionality and unconventional pairing. These results illuminate new directions to unravel the high-temperature superconducting pairing mechanism.

Stable all‐inorganic CsPbX 3 perovskite nanocrystals (PNCs) with high optical yield can be used in combination with graphene as photon sensors with high responsivity (up to 10 6 A W −1 ) in the VIS‐UV range. The performance of these perovskite/graphene field effect transistors (FET) is mediated by charge transfer processes at the perovskite – graphene interface. Here, the effects of high electric (up to 3000 kV cm −1 ) and magnetic (up to 60 T) fields applied perpendicular to the graphene plane on the charge transfer are reported. The authors demonstrate electric‐ and magnetic‐field dependent charge transfer and a slow (>100 s) charge dynamics. Magneto‐transport experiments in constant (≈0.005 T s −1 ) and pulsed (≈1000 T s −1 ) magnetic fields reveal pronounced hysteresis effects in the transfer characteristics of the FET. A magnetic time is used to explain and model differences in device behavior under fast (pulsed) and slowly (continuous) changing magnetic fields. The understanding of the dynamics of the charge transfer in perovskite/graphene heterostructures developed here is relevant for exploitation of these hybrid systems in electronics and optoelectronics, including ultrasensitive photon detectors and FETs for metrology.

Superconductivity can be destroyed by a magnetic field with an upper bound known as the Pauli-limit in spin-singlet superconductors. Almost all the discovered superconductors are spin-singlet, with the highest transition temperature $T_c$ at ambient pressure achieved in the cuprate family. The closest cuprate analogue is the recently discovered infinite-layer nickelate, which hosts substantial structural and electronic similarity to the cuprate. A previous magnetotransport study on Nd$_{0.775}$Sr$_{0.225}$NiO$_2$ has observed an isotropic Pauli-limited upper critical field. Here, we report a large violation (>2 times) of Pauli-limit in every crystallographic directions in La$_{1-x}$(Ca/Sr)$_x$NiO$_2$ regardless of the doping $x$. Such a large violation of the Pauli-limit in all directions in La$_{1-x}$(Ca/Sr)$_x$NiO$_2$ is unexpected and unlikely accounted by a Fulde Ferrell-Larkin-Ovchinnikov (FFLO)-state, strong spin-orbit-coupling, strong-coupling or a large pseudogap. On the other hand, in agreement with the previous report, we observe a Pauli-limiting critical field in Nd$_{1-x}$Sr$_x$NiO$_2$ and the superconducting anisotropy decreases as doping increases, suggesting a spin-singlet pairing. Therefore, superconductivity in La$_{1-x}$(Ca/Sr)$_x$NiO$_2$ could be driven by a non-spin-singlet Cooper pairing mechanism with an attractive high-$T_c$ at 10 K, an order of magnitude higher than the known spin triplet superconductors, favourably extending the application of spin-triplet superconductivity in topological matter, non-dissipative spintronics, and quantum computing.

We study Shubnikov-de Haas oscillations in a p-type WSe2 monolayer under very high magnetic field. The oscillation pattern is complex due to a large spin and valley splitting, in the non-fully-resolved Landau level regime. Our experimental data can be reproduced with a model in which the main parameter is the ratio between the Zeeman energy and the cyclotron energy. The model takes into account the Landau levels from both valleys with the same Gaussian broadening, which allows to predict the relative amplitude of the resistance oscillation originating from each valley. The Zeeman energy is found to be several times larger than the cyclotron energy. It translates into a large and increasing effective Lande factor as the hole density decreases, in the continuity of the values reported in the literature at lower carrier density.

We present an experimental demonstration as well as a theoretical model of an integrated circuit designed for the manipulation of a microwave field down to the single-photon level. The device is made of a superconducting resonator coupled to a transmission line via a second frequency-tunable resonator. The tunable resonator can be used as a tunable coupler between the fixed resonator and the transmission line. Moreover, the manipulation of the microwave field between the two resonators is possible. In particular, we demonstrate the swapping of the field from one resonator to the other by pulsing the frequency detuning between the two resonators. The behavior of the system, which determines how the device can be operated, is analyzed as a function of one key parameter of the system, the damping ratio of the coupled resonators. We show a good agreement between experiments and simulations, realized by solving a set of coupled differential equations.

We have created a doubly tunable resonator, with the intention to simulate relativistic motion of the resonator boundaries in real space. Our device is a superconducting coplanar-waveguide microwave resonator, with fundamental resonant frequency ω1/(2π) ~ 5 GHz. Both of its ends are terminated to ground via dc-SQUIDs, which serve as magnetic-flux-controlled inductances. Applying a flux to either SQUID allows the tuning of ω1/(2π) by approximately 700 MHz. Using two separate on-chip magnetic-flux lines, we modulate the SQUIDs with two tones of equal frequency, close to 2ω1. We observe photon generation, at ω1, above a certain pump amplitude threshold. By varying the relative phase of the two pumps we are able to control this threshold, in good agreement with a theoretical model. At the same time, some of our observations deviate from the theoretical predictions, which we attribute to parasitic couplings resulting in current driving of the SQUIDs.

Charged excitons, or X-+/- trions, in monolayer transition-metal dichalcogenides have binding energies of several tens of meV. Together with the neutral exciton X-0 they dominate the emission spectrum at low and elevated temperatures. We use charge-tunable devices based on WSe2 monolayers encapsulated in hexagonal boron nitride to investigate the difference in binding energy between X+ and X- and the X- fine structure. We find in the charge-neutral regime, the X-0 emission accompanied at lower energy by a strong peak close to the longitudinal optical (LO) phonon energy. This peak is absent in reflectivity measurements, where only the X-0 and an excited state of the X-0 are visible. In the n-doped regime, we find a closer correspondence between emission and reflectivity as the trion transition with a well-resolved fine-structure splitting of 6 meV for X- is observed. We present a symmetry analysis of the different X+ and X- trion states and results of the binding energy calculations. We compare the trion binding energy for the n- and p-doped regimes with our model calculations for low carrier concentrations. We demonstrate that the splitting between the X+ and X- trions as well as the fine structure of the X(-)state can be related to the short-range Coulomb-exchange interaction between the charge carriers.

We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The ν=2 quantized plateau appears from fields B≃5  T and persists up to B≃80  T. At high current density, in the breakdown regime, the longitudinal resistance oscillates with a 1/B periodicity and an anomalous phase, which we relate to the presence of additional electron reservoirs. The high field experimental data suggest that these reservoirs induce a continuous increase of the carrier density up to the highest available magnetic field, thus enlarging the quantum plateaus. These in-plane inhomogeneities, in the form of high carrier density graphene pockets, modulate the quantum Hall effect breakdown and decrease the breakdown current.

The transport properties of the complex oxide LaAlO3/SrTiO3 interface are investigated under a high magnetic field ( 55 T). Small oscillations of the magnetoresistance with altered periodicity are observed when plotted versus the inverse magnetic field. We attribute this effect to Rashba spin-orbit coupling which remains consistent with large negative magnetoresistance when the field is parallel to the sample plane. A large inconsistency between the carrier density extracted from Shubnikov-de Haas analysis and from the Hall effect is explained by the contribution to transport of at least two bands with different mobilities. Published by AIP Publishing.

We show aging of Glauber-type dynamics on the random energy model, in the sense that we obtain the annealed scaling limits of the clock process and of the age process. The latter encodes the Gibbs weight of the configuration occupied by the dynamics. Both limits are expressed in terms of stable subordinators.

We present a system which allows to tune the coupling between a superconducting resonator and a transmission line. This storage resonator is addressed through a second, coupling resonator, which is frequency-tunable and controlled by a magnetic flux applied to a superconducting quantum interference device. We experimentally demonstrate that the lifetime of the storage resonator can be tuned by more than three orders of magnitude. A field can be stored for 18 mu s when the coupling resonator is tuned off resonance and it can be released in 14 ns when the coupling resonator is tuned on resonance. The device allows capture, storage, and on-demand release of microwaves at a tunable rate. (C) 2014 AIP Publishing LLC.

This paper reviews how the evolution of FDSOI planar architecture towards Trigate Nanowires leads to a natural Single Electron Transistor and Field Effect Transistor convergence at room temperature. On one hand, this convergence sets up technological specifications to preserve CMOS operation. On the other hand it opens the path to room temperature hybrid circuits based on single electron transistors and MOSFETs. Further on, single electron effects can be downscaled to the ultimate single atom transistors and we demonstrate the practical performance of electron pumps for metrologic applications.

In this study, we address the electronic properties of conducting films constituted of an array of randomly distributed few layer graphene patches and investigate on their most salient galvanometric features in the moderate and extreme disordered limit. We demonstrate that, in annealed devices, the ambipolar behaviour and the onset of Landau level quantization in high magnetic field constitute robust hallmarks of few-layer graphene films. In the strong disorder limit, however, the magneto-transport properties are best described by a variable-range hopping behaviour. A large negative magneto-conductance is observed at the charge neutrality point, in consistency with localized transport regime.

Thanks to a well-controlled CMOS FDSOI technology we have recently been able to demonstrate breakthroughs in the combined use of field effect and Coulomb blockade phenomena. On one hand, we have demonstrated room temperaturehybrid circuits based on single electron transistors and MOSFETs. On the other hand, we have shown the practical performance of electron pumps designed with a single silicided Coulomb island and MOSFETs as tunable barriers for metrologic applications.

We access properties of single dopants embedded in ultra-scaled MOSFET. In such nanostructures, the ionization energy of a single dopant is enhanced. We establish a new method to determine the energy spectrum of a single dopant by connecting two dopants in series and using one dopant as an energy probe for the second one. Gigahertz microwave driving of this double donor system reveals coherent charge transfert in this ultimate “atomic” transistor.

We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the doping profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local doping is achieved with the realisation of up to two arsenic implantation steps in combination with gates and nitride spacers acting as a mask. We compare nominally identical devices with different implantations and different voltages applied to the substrate, leading to the realisation of both intrinsic and doped coupled dot structures. We demonstrate devices in which all the tunnel resistances towards the electrodes and between the dots can be independently tuned with the control top gates wrapping the silicon nanowire.

We report a patterning strategy for building the first monoelectronic device complementary metal oxide semiconductor (CMOS)-compatible platform, including a single-electron transistor (SET) and multiple coupled quantum dots. Aggressive hybrid lithography (e-beam and deep UV are combined) and plasma etching are used to form adapted silicon active areas and gates, with a minimum size of 14 nm and a pitch of 80 nm after etching. These aggressive dimensions enable the study of double dots, a key structure for the more complex quantum circuits emerging now.

For the first time a state-of-the-art CMOS foundry (CEA-LETI-MINATEC) has been used to design silicon nanostructures with single or multiple gates dedicated to the study of single electron effects. The nanofabrication uses two e-beam lithography steps to define an active region formed by silicon-on-insulator (SOI) nanowires of cross section down to 20 nm x 10 nm and polysilicon gates of lengths down to 20 nm. The pitch at the gate level (distance between centers of the successive gates) is as small as 70 nm. Several technological splits (SOI thickness, channel doping, LDD doping, nitride spacer's length, trimming of active layer) have been made to compare devices differing only by one crucial parameter. Several dozen of designs have been introduced in the e-beam data base to analyse the impact of key geometrical parameters. As a whole more than 40,000 samples have been fabricated and several hundreds of them have been studied electrically, mostly at low temperature. Some of them are described in this contribution.