L’objectif principal de cette étude était de savoir si les accouchées connaissaient les recommandations « zéro alcool pendant la grossesse ». Les objectifs secondaires étaient de savoir si les patientes avaient reçu une information et d’évaluer leurs connaissances sur les conséquences d’une consommation d’alcool pendant la grossesse. Il s’agissait d’une étude transversale, comparative et multicentrique réalisée entre le 9 mars et le 4 avril 2008 dans les quatre maternités du bassin grenoblois. Deux cent soixante-quinze questionnaires ont été analysés. Parmi les accouchées, 81,3 % connaissaient les recommandations. 69,8 % notaient avoir reçu une information lors de leur grossesse, les primipares plus que les multipares (p < 0,05). L’information était donnée par un professionnel de santé (62,4 %), par les médias (46,6 %) ou par un document écrit. Environ deux tiers des accouchées connaissaient les conséquences d’une consommation d’alcool pendant la grossesse. La recommandation « Zéro alcool pendant la grossesse » n’est pas encore acquise pour toutes les accouchées. Il est donc nécessaire de réaliser une information systématique sur les dangers de l’alcool lors du suivi de grossesse. Pour avoir opposé cette étude à une autre réalisée par l’INPES auprès de la population générale, nous avons observé que, même si les accouchées ont conscience du danger de l’alcool sur l’enfant à naître, elles connaissent moins les conséquences d’une consommation d’alcool pendant la grossesse que la population générale. The main objective of this study was to find out whether women who had recently given birth knew about the “zero alcohol during pregnancy” recommendations. Secondary objectives were to find out whether the patients had received any information and to assess how much they knew about the consequences of consuming alcohol during pregnancy. This consisted of a cross-sectional, comparative and multi-centre study carried out between 9 March and 4 April 2008 in the four maternity hospitals in the Grenoble area. Two hundred and seventy-five questionnaires were analysed. 81.3% of the women who had recently given birth knew what the recommendations were. 69.8% noted that they had received information about it during their pregnancy, the primiparous women more so than the multiparous women (p < 0.05). The information was provided by a health-care professional (62.4%), by the media (46.6%) or by means of a written document. Around two thirds of the women who had recently given birth knew the consequences of consuming alcohol during pregnancy. Some women who have recently given birth still don’t know about the “Zero alcohol during pregnancy” recommendation. Therefore it is necessary to set up a systematic information system to warn about the dangers of alcohol during pregnancy follow-ups. To contrast this study with another one carried out by the National Institute for Prevention and Health Education (INPES) within the general population, we observed that even if the women who had recently given birth were aware of the danger of alcohol to the unborn child, they knew less about the consequences of alcohol consumption during pregnancy than the general population.

In this paper, defect counting results are presented both on silicon substrates and on EUV mask blanks with their equivalent PSL size distribution. The measurements are achieved with our counting defect prototype COMNET but also with a commercial tool. Improvements of COMNET have been performed to reach sensitivities (PSL equivalent size on silicon) of 80 nm on silicon substrate, 90 nm on EUV mask blank and 125 nm on glass substrate. A first analysis about COMNET repeatability is presented and the impacts of known errors on defect number and size values are evaluated. 2 Typical counting data measured on a EUV mask blank having an added defect density inferior to 1 def/cm(2) (defect size superior to 90 nm) are presented. The analysis of these data shows two main populations of added defects which are characteristic of the deposition process: one close to 100 nm and the other in the micron range. Each group represents half of the total number of added defects. The origins of these defects are finally discussed on the basis of specific experiments chosen to highlight the possible role of the different process steps.

We report the fabrication sequence of YBaCuO free standing air bridges and YBaCuO edge junction arrays as IR bolometers. Standard substrates of the semiconductor microelectronics have been used. Electrical characterisations are given and current sensitivities up to 200 A/W have been measured on the suspended microstructures under a blackbody irradiation. The detectivity D is in the range of 10(8) cm root Hz/W with a response time shorter than 0.5 ms.

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ABSTRACT The discovery of high Tc superconductors has revealed promising applications in optoelectronics. However a basic requirement for the development of successful novel optronic devices is the ability to fabricate high quality Josephson, tunnel or three terminal devices in a reproducible, controllable and reliable way.Large area deposition of YBCO multilayers, whole wafer processing techniques are essential and in great progress. Nevertheless, the degradation of the YBa2Cu3O7-x surface layer close to the junction contacts is observed and induces severe limitations in the devices performances. Experimental evidence of such problems and possible solutions will be presented. 1. INTEREST OF HTC JUNCTIONS FOR PHOTON DETECTION Optoelectronic applications using high-Tc superconducting oxides have recentlyattracted much attention [ 1-5J . For instance the feasibility of sensitive high-bandwidth infrared detectors with a wide optical band should provide important applications in the field of space, communications and military industries.In the past highly sensitive detectors have been made in Grain-Boundary Josephsonjunctions (GBJ) formed in BaPbl-xBixO3 (BPBO) 16] and more recently in Bal-xKxBiO3

YBaCuO (YBCO) based multilayers have been deposited independently by three techniques: laser ablation, inverted cylindrical target sputtering and on-axis planar d.c. magnetron sputtering. The last technique is used to cover uniformly R-plane sapphire and LaAlO3 2 in wafers with YBCO or multilayers to produce optoelectronic devices such as IR detectors. Very thin (about 3 nm) yttria-stabilized zirconia and MgO dielectric films have been studied as tunnel barriers for making such high Tc tunnel junctions.

"In-situ" direct deposition at approximately 700-degrees-C of thin YBa2Cu3O7-x superconductive films and multilayers have been done by three techniques using stoechiometric YBa2Cu3O7-x sintered targets. Excimer laser ablation, DC-Magnetron with hollow and with planar targets lead respectively to 0.5, 1.2 and 2.5 inches diameter uniformly superconductive layers under static conditions. High critical current densities (> 10(6) Acm-2 at 77K) associated with low resistivity and good epitaxial behaviours are achieved on top of MgO, SrTiO3, LaA10(3), YSZ single crystal wafers. High quality c-oriented films (Tc > 80 K) are routinely obtained by DC magnetron on large sapphire (> 2 inches) substrates covered by a YSZ RF sputtered buffer layer. IR properties of such films have been checked at 1.15-mu-m wavelength. In order to achieve active devices (such as optical detectors, high frequency mixers...), small (< 10-mu-m2) YBa2Cu3O7-YSZ-Ag (SIN) tunnel junctions and arrays have been successfully patterned in the (SIN) trilayers using the "SNOP" process.

This paper reports on in-situ direct deposition at {approximately} 700{degrees}C of thin YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} superconductive films and multilayers done by three techniques using stoichiometric YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} sintered targets. Excimer laser ablation, DC-Magnetron with hollow and with planar targets lead respectively to 0.5, 1.2 and 2.5 inches diameter uniformly superconductive layers. under static conditions. High critical current densities ({gt}10{sup 6} Acm{sub {minus}2} at 77K) associated with low resistivity and good epitaxial behaviors are achieved on top of MgO, SrTiO{sub 3}, LaAlO{sub 3}, YSZ single crystal wafers. High quality c-oriented films (Tc {gt} 80K) ae routinely obtained by DC magnetron on large sapphire ({gt}Z inches) substrates covered by the YSZ RF sputtered buffer layer. IR properties of such films have been checked at 1.15 {mu}m wavelength. In order to achieve active devices (such as optical detectors, high frequency mixers...), small ({lt}10 {mu}m{sup 2}) YBa{sub 2}Cu{sub 3}O{sub 7}-YSZ-Ag (SIN) tunnel junctions and arrays have been successfully patterned in the (SIN) trilayers using the SNOP process.

A technique is presented to delineate correctly the position of the storage loops, i.e. domain walls where the Bloch line pairs have to sit for the operation of the memory. To make the loop confinement technique feasible over a wide range of material parameters, bias field values, and technological parameters, a grooving technique is chosen. A model is first described and various stability conditions are studied. Experimental realization of that technique is then presented and illustrated, and the confinement conditions are compared with the predictions of the model.

All-Niobium Nitride Josephson junctions have been prepared successfully using a new processing called SNOP : Selective Niobium (Nitride) Overlap Process. Such a process involves the "trilayer" deposition on the whole wafer before selective patterning of the electrodes by optically controlled Dry Reactive Ion Etching. Only two photomask levels are need to define an "overlap" or a "cross-type" junction with a good accuracy. The properties of the Niobium Nitride films deposited by DC-Magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 °C.

Deux solutions de bupivacaïne à 0,4 %, l'une isobare, l'autre hyperbare, ont été étudiées lors de rachianesthésies chez 264 patients âgés de plus de 70 ans, subissant des interventions de même type. Avec la solution hyperbare, le temps d'installation de l'analgésie est plus court : 8,4±4 min (pour 11,5±5,1 min avec la solution isobare), le niveau d'analgésie atteint est plus élevé de deux métamères en moyenne et la durée de l'analgésie est plus longue : 147,3±24,8 min (pour 121,1±24,8 min avec la solution isobare). Les chutes tensionnelles sont plus fréquentes avec la solution hyperbare. De même, le bloc moteur, apprécié sur la mobilité des membres inférieurs et le relâchement de la paroi abdominale, est plus intense avec la solution hyperbare. Enfin, il y a moins d'échecs avec la solution hyperbare (3,4 %) qu'avec la solution isobare (12,1 %).

This study compared two isobaric and hyperbaric solutions of 0.4% bupivacaine used for carrying out spinal anaesthesia in 264 patients more than 70 years old undergoing comparable surgical procedures. With the hyperbaric solution, the mean time of onset of analgesia was shorter: 8.4 +/- 4 min (11.5 +/- 5.1 min with the isobaric solution), the level of analgesia higher by two dermatomes and the mean duration of analgesia longer: 147.3 +/- 24.8 min (121.1 +/- 24.8 min with the isobaric solution). Blood pressure fell more often with the hyperbaric solution. The motor block, assessed by the inability to move the legs and abdominal wall paralysis, was more complete with the hyperbaric solution. Lastly, there were less failures: 3.4% with hyperbaric solution and 12.1% with isobaric solution.

Process test chips for Josephson integrated Circuits including refractory metal resistors have been achieved and tested with Niobium based technology made in LETI. Tantalum resistors are lying above niobium base electrode. Such a configuration gives compact logic circuits and very good mechanical bahaviours. An entire 14 layers technology including Nb-Nb2O5- Pb(In) tunnel junctions, control lines and contact pads is being achieved and described. Arrays of 100 interferometers cells, superconductive contacts in series, and other chips for measuring capacitance of junctions and insulators, penetration depths in superconductive materials, resistors are fabricated on sapphire, wafers and tested. Such devices yield a good stability upon thermal cycling and storage at room temperature.