Resolving the timing of crustal processes and meteorite impact events is central to understanding the formation, evolution and habitability of planetary bodies. However, identifying multi-stage events from complex planetary materials is highly challenging at the length scales of current isotopic techniques. Here we show that accurate U-Pb isotopic analysis of nanoscale domains of baddeleyite can be achieved by atom probe tomography. Within individual crystals of highly shocked baddeleyite from the Sudbury impact structure, three discrete nanostructural domains have been isolated yielding average 206Pb/238U ages of 2,436±94 Ma (protolith crystallization) from homogenous-Fe domains, 1,852±45 Ma (impact) from clustered-Fe domains and 1,412±56 Ma (tectonic metamorphism) from planar and subgrain boundary structures. Baddeleyite is a common phase in terrestrial, Martian, Lunar and asteroidal materials, meaning this atomic-scale approach holds great potential in establishing a more accurate chronology of the formation and evolution of planetary crusts.

Journal Article Experimental Evaluation of Conditions Affecting Specimen Survivability in Atom Probe Tomography Get access TJ Prosa, TJ Prosa CAMECA Instruments, Inc., Madison, WI, USA Search for other works by this author on: Oxford Academic Google Scholar D Lawrence, D Lawrence CAMECA Instruments, Inc., Madison, WI, USA Search for other works by this author on: Oxford Academic Google Scholar D Olson, D Olson CAMECA Instruments, Inc., Madison, WI, USA Search for other works by this author on: Oxford Academic Google Scholar S Strennen, S Strennen CAMECA Instruments, Inc., Madison, WI, USA Search for other works by this author on: Oxford Academic Google Scholar I Martin, I Martin CAMECA Instruments, Inc., Madison, WI, USA Search for other works by this author on: Oxford Academic Google Scholar DJ Larson, DJ Larson CAMECA Instruments, Inc., Madison, WI, USA Search for other works by this author on: Oxford Academic Google Scholar RL Martens, RL Martens Metallurgical and Materials Engineering, University of Alabama, Tuscaloosa, AL, USA Search for other works by this author on: Oxford Academic Google Scholar J Goodwin, J Goodwin Metallurgical and Materials Engineering, University of Alabama, Tuscaloosa, AL, USA Search for other works by this author on: Oxford Academic Google Scholar A Portavoce, A Portavoce Aix-Marseille Universite, IM2NP, F-13397 Marseille Cedex, France Search for other works by this author on: Oxford Academic Google Scholar D Mangelinck D Mangelinck Aix-Marseille Universite, IM2NP, F-13397 Marseille Cedex, France Search for other works by this author on: Oxford Academic Google Scholar Microscopy and Microanalysis, Volume 21, Issue S3, 1 August 2015, Pages 849–850, https://doi.org/10.1017/S1431927615005048 Published: 23 September 2015

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The electric fields used in atom probe tomography (APT) generate stresses normal to the specimen surface proportional to the electric field squared [1]. For example, typical APT evaporation fields of 30-60 V/nm result in stresses of the order 1 tonne/mm 2 [2]. As such, specimen fracture has long been a serious problem for APT [3-6].

The atomic-scale analysis of a commercial light emitting diode device purchased at retail is demonstrated using a local electrode atom probe. Some of the features are correlated with transmission electron microscopy imaging. Subtle details of the structure that are revealed have potential significance for the design and performance of this device.

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (arsenic implant). Efforts were taken to manufacture specimens with limited variation in size and shape to minimize variation in physical reconstruction parameters. A tip profile reconstruction was utilized where measurements of tip profile, post-analysis specimen radius and sphere-to-cone radius ratio were required as inputs into the reconstruction process. A variation of 4% is observed in the dose measurement under these conditions. Various considerations necessary to narrow the observed variation in measured dose, toward the limit imposed by counting statistics, are discussed.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Abstract There are many opportunities in semiconductor processing where atom probe tomography (APT) analysis of a finished product is desirable; competitive analysis and failure analysis are two good examples, and only recently have APT results been obtained from fully processed "off-the-shelf" transistor structures that are part of a finished product. This paper explores the feasibility of APT analysis for fully packaged integrated-circuit microelectronic devices by detailing the various options available in specimen preparation and the resulting analyses. The goal of this work is to take an off-the-shelf microelectronics product and perform APT analysis on various device-level components. This work demonstrates that a wealth of high quality information may be obtained from site-specific APT analysis of post-production microelectronic devices. The yield of useful results from such analyses has not yet been determined, but the small number of specimens analyses (four) yielded quality results in the first attempt.

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Atom probe tomography and scanning transmission electron microscopy has been used to analyze a commercial microelectronics device prepared by depackaging and focused ion beam milling. Chemical and morphological data are presented from the source, drain and channel regions, and part of the gate oxide region of an Intel (R) i5-650 p-FET device demonstrating feasibility in using these techniques to investigate commercial chips.

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009