Spin-carrying single-photon emitters operating in the telecommunication C-band (1530-1565nm) are prime candidates for integrated spin-photon interfaces, offering seamless compatibility with existing fiber-optic infrastructure, an essential component for future quantum networks. In this context, erbium-dopants ($\text{Er}^{3+}$) are particularly compelling due to their exceptional emitter properties, including small spectral diffusion and long spin coherence times. However, their low C-band photon-emission rate and operation at cryogenic temperatures has limited the realization of this technology. In this work, we demonstrate fully integrated single-photon emission from an ion implanted $\text{Er}^{3+}$-embedded into a 4H-silicon-carbide-on-insulator (4H-SiCOI) microring resonator operating at room temperature. By optimizing the mode overlap between the resonator and the $\text{Er}^{3+}$-defect, we achieved a $\sim$70$\times$ Purcell enhancement and recorded small spectral diffusion of $\sim$54 MHz. We further characterize the $\text{Er}^{3+}$ single photon emission via photon correlation g$^{(2)}$-histograms and investigate its performance under varying magnetic-field, demonstrating Zeeman splitting on single emitters.

Silicon carbide on insulator (SiCOI) has emerged as a promising platform for microresonator-based frequency comb technology, owing to its exceptional optical properties-including a high refractive index, a broad transparency window, and the coexistence of both second-and third-order optical nonlinearities. Recent demonstrations have shown efficient Raman laser and frequency comb generation in SiC integrated microresonators. In this work, we report the first observation, to our knowledge, of Stokes soliton generation in SiC integrated micro-resonators. Pumped at a resonance of TE10 mode (1555.2 nm) with 270 mW of on-chip power, a strong Stokes signal at 1769.2 nm, corresponding to a Raman shift of approximately 776 cm-1, is observed in a 4H-SiCOI microresonator with a 36 mu m radius and a quality factor of 1.1 million for TE00 mode. As the pump wavelength is adiabatically tuned towards the resonance, the system undergoes a sequence of dynamical states-transitioning from Turing patterns to chaotic combs, and finally to a stable single soliton state. The pump laser serves a dual role: it acts as the energy source for Stokes comb generation and simultaneously compensates for thermal dynamics during Stokes soliton formation. These results demonstrate the low-noise frequency conversion into a longer wavelength range with the SiCOI platform, highlighting its potential for the mid-infrared soliton comb generation and gas spectroscopy applications. (c) 2026 Chinese Laser Press

Solid state spin photon interfaces operating in the near telecom and telecom bands are a key resource for long distance quantum communication and scalable quantum networks. However, their optical transitions often suffer from spectral diffusion that hampers the generation of coherent spin photon entanglement. Here we demonstrate narrow magneto-optical transitions of erbium dopants implanted into thin film silicon carbide (SiC)-on-insulator, a viable platform for industrially scalable quantum networks. Using high-resolution resonant spectroscopy and spectral hole burning at cryogenic temperatures, we reveal sub megahertz homogeneous linewidths and identify two lattice sites that best stabilise the emitters. We further characterise their optical lifetimes and magneto-optical response, establishing erbium doped SiC-on-insulator as a robust and scalable platform for on-chip quantum networks.

Sideband-resolved 4H silicon carbide optomechanical resonator is demonstrated in a 2.6-μm-radius microdisk for the first time, featuring a mechanical frequency of 1.6 GHz and an optical quality factor above 1 million in 1550 nm.

Sideband-resolved cavity optomechanical resonators provide a powerful platform for coherent photon–phonon interactions, enabling applications ranging from quantum state transduction and optomechanically induced transparency to precision sensing and microwave photonics. Achieving this regime in integrated microresonators, however, requires simultaneously realizing a narrow optical cavity linewidth, a high-frequency mechanical mode, and low mechanical dissipation. Here, we report the first sideband-resolved optomechanical resonators based on the 4H silicon carbide (4H-SiC) platform. By combining compact microdisk geometries with interference-engineered anchor-loss suppression, we simultaneously achieve intrinsic optical quality factors exceeding 1×10^6, room-temperature mechanical quality factors up to 1.51×10^4, and a sideband-resolution factor greater than seven. Systematic numerical and experimental studies reveal that a local minimum in anchor loss enables high mechanical quality factors without requiring aggressive undercutting, substantially improving fabrication yield and device robustness. We further demonstrate the first observation of optomechanically induced transparency in integrated 4H-SiC resonators, confirming coherent cavity optomechanical interactions in this material platform. These results establish 4H-SiC as a promising platform for integrated cavity optomechanics and provide a practical route toward scalable photon–phonon devices for classical and quantum photonic technologies.

Recent progress in the 4H-silicon-carbide-on-insulator (4H-SiCOI) platform has resulted in the demonstration of essential building blocks such as low-loss waveguides and microresonators. In this work, we add tunability to the 4H-SiCOI platform by integrating microheaters with compact microresonators. The strong thermo-optic effect in SiC enables a resonance tuning rate of 11.7 pm/mW for a 36-mu m-radius SiC microring, with a maximum wavelength shift up to 2.4 nm (300 GHz). The thermal time constant of the microheater is estimated to be near 7 mu s, corresponding to a 3-dB electrical bandwidth of 40 kHz. As a demonstration of potential applications, we employ the microheater to perform fast thermo-optic scans to deterministically access the single-soliton state of a 36-mu m-radius microcomb source. In addition, an add-drop filter based on an over-coupled 18-mu m-radius SiC microring is combined with the microcomb source for the selective filtering of individual comb lines, featuring an approximate 3-dB bandwidth of 5 GHz and an insertion loss of less than 1 dB. With such demonstrations, our work brings the much-needed tunability and reconfigurability to the 4H-SiCOI platform, paving the way for a wealth of chip-scale applications.

We demonstrate the first integrated optomechanical resonator on a 4H-SiC-on-insulator platform. The 4.3 µm-radius device achieves a mechanical frequency-quality factor product of 1.82 × 10 13 Hz in air and regenerative oscillations with 14 µW threshold.

Silicon carbide (SiC) has great potential for optomechanical applications due to its outstanding optical and mechanical properties. However, challenges associated with SiC nanofabrication have constrained its adoption in optomechanical devices, as embodied by the considerable optical loss or lack of integrated optical access in existing mechanical resonators. In this work, we overcome such challenges and demonstrate a low-loss, ultracompact optomechanical resonator in an integrated 4H-SiC-on-insulator (4H-SiCOI) photonic platform for the first time, to our knowledge. Based on a suspended 4.3-mu m-radius microdisk, the SiC optomechanical resonator features low optical loss (<1 dB/cm), a high mechanical frequency f(m), of 0.95 x 10(9) Hz, a mechanical quality factor Q(m) of 1.92 x 10(4), and a footprint of <1 x 10(-5) mm(2). The corresponding f(m) Q(m) product is estimated to be 1.82 x 10(13) Hz, which is among the highest reported values of optomechanical cavities tested in ambient environment at room temperature. In addition, the strong optomechanical coupling in the SiC microdisk enables coherent regenerative optomechanical oscillations at a threshold optical dropped power of 14 mu W, which also supports efficient harmonic generation at increased power levels. With such competitive performance, we envision a range of chip-scale optomechanical applications to be enabled by the low-loss 4H-SiCOI platform. (c) 2025 Chinese Laser Press

Stimulated Raman scattering in a Kerr microresonator is generally considered a competing nonlinear process that hinders the formation of Kerr soliton microcombs. In this work, we experimentally demonstrate that the ubiquitous Raman gain in Kerr microresonators can, in fact, be harnessed to achieve the opposite effect: it enables the formation of platicon microcomb in the normal dispersion regime, while also relaxing the conditions for soliton formation and broadening the spectrum through the simultaneous excitation of a Stokes soliton. We showcase this process in a compact silicon carbide microresonator supporting a platicon microcomb spanning 1500 to 1700 nm, with a pump-to-comb conversion efficiency as high as 56%. Furthermore, the presence of a Stokes soliton in the same mode family extends the comb spectrum beyond 1800 nm. By intentionally leveraging-rather than suppressing-the Raman effect, our work offers new insights into the Raman-Kerr interplay and introduces a promising approach to generating broadband platicon microcombs.

Atomic-size defects, known as color centers, hosted in solid-state materials, such as silicon carbide and diamond, are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these color centers within photonic integrated circuits may enable precise control over their inherent photophysical properties through strong light-matter interaction. Here, we investigate ion-implanted erbium (Er3+) defects embedded in nanometric thin-film 4H-silicon-carbide-on-insulator (4H-SiCOI). Optimized implantation conditions and thermal annealing processes designed to enhance the photoluminescence excitation (PLE) emission characteristics of the Er3+ defect are reported. By examining key properties such as photoluminescence intensity, optical lifetime, and polarization, we present an analysis of ensemble Er3+ defects within 4H-SiCOI, providing insights into their potential for future quantum applications.

Microheaters are integrated into the 4H-silicon-carbide-on-insulator platform, featuring a resonance shift rate of 17.5 pm/mW and a time constant around 7 µs. Single-soliton state in a compact microring is accessed using the fast thermo-optic scan.

An optomechanical frequency comb arises from the nonlinear interaction between optical and mechanical modes in a cavity, with its repetition rate set by the mechanical frequency. Despite promising applications in the microwave domain, previous demonstrations have been limited in spectral range due to inherently low mechanical frequencies. Here, we report an optomechanical comb with a record modulation span from 1 to 70 GHz, achieved by harnessing the strong optomechanical nonlinearity of a 2.5-μm-radius silicon carbide microdisk. With just 1 mW of dropped optical power, radiation pressure from a continuous-wave pump drives strong phonon lasing, generating 42 phase-locked harmonics with 1.655 GHz spacing. The combination of such broad bandwidth, low phase noise (-132 dBc/Hz at 1 MHz offset frequency), and frequency stability (<10-7 at 1 s of averaging time) positions this ultracompact optomechanical comb as a powerful platform for diverse applications.

Silicon carbide (SiC) has great potential for optomechanical applications due to its outstanding optical and mechanical properties. However, challenges associated with SiC nanofabrication have constrained its adoption in optomechanical devices, as embodied by the considerable optical loss or lack of integrated optical access in existing mechanical resonators. In this work, we overcome such challenges and demonstrate a low-loss, ultracompact optomechanical resonator in an integrated 4H-SiC-on-insulator (4H-SiCOI) photonic platform for the first time. Based on a suspended 4.3-μm-radius microdisk, the SiC optomechanical resonator features low optical loss (<1 dB/cm), a high mechanical frequency f_m of 0.95 × 10^9 Hz, a mechanical quality factor Q_m of 1.92×10^4, and a footprint of <1× 10^-5 mm^2. The corresponding f_m· Q_m product is estimated to be 1.82 × 10^13 Hz, which is among the highest reported values of optomechanical cavities tested in an ambient environment at room temperature. In addition, the strong optomechanical coupling in the SiC microdisk enables coherent regenerative optomechanical oscillations at a threshold optical dropped power of 14 μW, which also supports efficient harmonic generation at increased power levels. With such competitive performance, we envision a range of chip-scale optomechanical applications to be enabled by the low-loss 4H-SiCOI platform.

We have demonstrated, for the first time to our knowledge, self-injection locking of a distributed feedback diode laser to a multimode 4H-silicon carbide (4H-SiC) microring resonator, which is also used for the observation of resonant opto-mechanical oscillation in the cavity modes. While the fundamental transverse-electric mode family of the silicon carbide microring was optically pumped, Stokes light was generated in the adjacent fundamental transverse-magnetic resonant mode. The threshold of the process did not exceed 5 mW of light entering the cavity characterized by a loaded optical quality factor of 2 × 106. These results mark a significant milestone in unlocking the potential of 4H-SiC through turnkey soliton microcomb generation and empowering future advancements in areas such as cavity optomechanics using this versatile and quantum-friendly material platform.

A phononic frequency comb consists of equally spaced components in the mechanical frequency domain and holds promise for numerous applications. Yet, prior demonstrations have been limited in spectral range due to the inherently low mechanical frequencies. In this work, we report a phononic comb with a record span from 1 to 70 GHz. This result is achieved by harnessing the strong mechanical nonlinearity of a 2.5-μm-radius silicon carbide microdisk, which supports a radial breathing mode at 1.655 GHz with a mechanical quality factor of 13,500. With just 1 mW of dropped optical power, radiation pressure from a continuous-wave pump drives strong phonon lasing, generating 42 phase-locked harmonics with 1.655 GHz spacing. The combination of such broad bandwidth, low phase noise (-132 dBc/Hz at 1 MHz offset frequency) and frequency stability (<10^-7 at 1 second of averaging time) positions this ultracompact phononic comb as a powerful platform for diverse applications.

Silicon carbide is a promising material platform for hosting various color centers that are suitable for quantum information processing. Here, we report the design and demonstration of an integrated electro-optic modulator that can directly interface silicon-vacancy centers in the 4H-silicon-carbide-oninsulator platform. Despite a relatively low electro-optic coefficient (0.22 pm/V), the optimized silicon carbide modulator is able to work in the 920-nm range with a propagation loss of less than 0.5 dB/cm, featuring a 3-dB bandwidth of around 500 MHz, an extinction ratio of 8-12 dB for an operating peakto-peak voltage of 10 V, and a footprint of less than 0.1 mm2. With such modulation performance, this approach described provides a cost-effective solution for the chip-scale implementation of the electro-optic modulation technology required for interfacing with color centers in the silicon carbide platform.

We observed that we can access a Raman stokes soliton corresponding to dominant Raman shift of ~777 cm-1. The stoke soliton was accessed by simply slow tuning and using a single pump laser wavelength, transitioning through a chaotic Raman comb regime. This was achieved at an on-chip power of ~200 mW.