In order to servitize manufacturing enterprises and meet the need of product service system, approaches to servitization are studied. Design for service method, manufacturing for service mode, and product-based service are regarded as key problems and discussed in detail respectively. Concept and evaluation standards of product service relationship are also discussed. And some significant topics for future studies are put forward.

Careful sample preparation and secondary ion mass spectroscopy have been used to characterize arsenic dose loss to the silicon–oxide interface. Using high resolution x-ray photoelectron spectroscopy for microprofiling, we have directly observed the pileup of arsenic at the silicon dioxide–silicon interface. At least half of the pileup is shown to be on the silicon side of the interface in the first monolayer of silicon. Monolayer chemical oxidation and etching are successfully used to profile this pileup in silicon. This pileup contains most of the arsenic dose loss that occurs during transient enhanced diffusion. This result is crucial to correctly model the dose loss and provides physical justification for using a trap/detrap model at the interface, which is necessary to account for the fact that the arsenic surface concentration remains constant during an anneal and the fact that the dose loss is partially reversible. Finally, we have found that normal etching of the oxide in dilute hydroflouric acid and subsequent rinsing in water and exposure to air causes a permanent loss in arsenic dose.

The photoassisted OMVPE growth technique is important for the fabrication of blue/green laser diodes based on CdxZn1 - xSe quantum wells. Low temperature growth with photoassistance is key to the fabrication of these devices, however, the compositional control of CdxZn1 - xSe becomes increasingly difficult as the growth temperature is reduced. We have studied the compositional control of CdxZn1 - xSe using the sources DMCd, DMZn, and DMSe, with irradiation from a Hg are lamp. We studied the dependence of the composition on the growth temperature, irradiation intensity, and source mass flows. The composition x increases with increasing temperature and decreases with increasing irradiation intensity. The solid-phase composition is a non-linear function of the gas-phase composition X. The slope of this characteristic, dx/dX, should be minimized for good compositional control. At 475 degrees C without photoassistance, dx/dX is 1.75 near a composition of 20%, as determined from the data of Parbrook et al. Decreasing the temperature increases dx/dX. At 370 degrees C with 12 mW/cm(2), dx/dX approximate to 13 and at 350 degrees C with 58 mW/cm(2) dx/dX approximate to 60. We have investigated this behavior at 370 degrees C with 12 mW/cm(2) irradiation by studying both the composition and the growth rate as a function of the gas-phase composition. The growth rate is non-monotonic, and is minimum for a gas-phase composition of similar to 0.20. The behavior is quite complex, and is not fully understood at the present time. Nonetheless, our results indicate that the Cd-bearing precursor is adsorbed much more strongly than the Zn-bearing precursor. Tn addition to this, the introduction of the DMCd strongly inhibits the growth of ZnSe. We have achieved sufficiently good compositional control at 370 degrees C and 12 mW/cm(2) to grow ZnSe/CdxZn1 - xSe/ZnSe multiple quantum well structures. More work is necessary in order to clarify the roles of irradiation intensity and VI/II ratio so that good compositional control can be achieved at lower growth temperatures.