Mercury cadmium telluride (HgCdTe or MCT) is the material of choice for infrared avalanche photodetectors (APDs) owing to its desirable qualities including high quantum efficiency and low excess noise factor. Recent advancements in growth techniques have allowed for bandgap engineered MCT films that further enhance the performance of MCT APDs. Monte Carlo has been a widely used method for simulating the multiplication process within avalanche photodiodes (APDs) due to its ability to accurately simulate non-equilibrium transport. In this work, we demonstrate how the gain, excess noise, and bandwidth of bandgap engineered MCT APDs can be accurately modeled in 3-D using Monte Carlo.

We present a detailed methodology for drift-diffusion (DD) modeling of gain and dark currents in mid-wave infrared (MWIR) and short-wave infrared (SWIR) ${\mathrm {Hg}}_{{1}-{x}}$ Cd x Te p-around-n avalanche photodiodes (APDs) based on a comprehensive analysis of experimentally obtained data from three different sets of devices. These devices are fabricated on homogeneous and compositionally-graded films with cadmium composition ranging from ${x}\,\,=0.37$ to 0.45, each with differing geometrical dimensions, and tested at operating temperatures ranging from 140 to 240 K. The temperature, composition, and electric-field dependent impact ionization (ImI) coefficients are calibrated first according to the given experimental gain data. The gain-normalized dark current (GNDC) curve, along with the presumption of electron-only multiplication, is then used to thoroughly understand and model the behavior of diffusion and generation currents. At high biases, the GNDC curve reveals contributions from tunneling, which are classified as either trap-assisted or band-to-band based on their temperature dependence. The tunneling mechanisms are modeled accordingly: trap-assisted tunneling (TAT) is scaled inversely with Shockley–Read–Hall (SRH) lifetime, while band-to-band tunneling (BTBT) is scaled with bandgap, effective mass, and an additional empirical temperature term. Finally, the comprehensive model is applied to all three experimental devices across the operating temperature range with good agreement.

Results of characterization data on linear mode photon counting (LMPC) HgCdTe electron-initiated avalanche photodiode (e-APD) focal plane arrays (FPA) are presented that reveal an improved understanding and the growing maturity of the technology. The first successful 2x8 LMPC FPA was fabricated in 2010 [1]. Since then a process validation lot of 2x8 arrays was fabricated. Five arrays from this lot were characterized that replicated the previous 2x8 LMPC array performance. In addition, it was unambiguously verified that readout integrated circuit (ROIC) glow was responsible for most of the false event rate (FER) of the 2010 array. The application of a single layer metal blocking layer between the ROIC and the detector array and optimization of the ROIC biases reduced the FER by an order of magnitude. Photon detection efficiencies (PDEs) of greater than 50% were routinely demonstrated across 5 arrays, with one array reaching a PDE of 70%. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 mu m to 25 mu m resulting in a 2x increase in E-APD gain from 470 on the 2010 array to 1100 on one of the 2013 FPAs. Mean single photon signal to noise ratios of >12 were demonstrated at excess noise factors of 1.2-1.3. NASA Goddard Space Flight Center (GSFC) performed measurements on the delivered FPA that verified the PDE and FER data.

An overview of recent improvements in our understanding of, and the maturity of, linear-mode photon counting with the HgCdTe electron-initiated avalanche photodiode is presented. In 2010 DRS fabricated an experimental 2 × 8 array with (64 μm)2 pixels which enabled, for the first time, linear-mode photon counting by use of the MWIR cutoff HgCdTe electron-initiated avalanche photodiode. The device had a high single-photon signal-to-noise ratio of 13.7, an excess noise factor of 1.3–1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 μm to 4.2 μm. DRS recently fabricated a new set of devices with improved yield and performance compared with the first device: the false event rate was reduced by a factor of almost 10 to 150 kHz, the photon detection efficiency was increased from 50% to >60%, and the APD gain was increased by a factor of 4 to over 1900.

A linear mode photon counting FPA using HgCdTe MWIR cutoff e-APDs has been designed, fabricated, and characterized. The broad spectral range (0.4 μm to 4.3 μm) is unique among photon counters, making this a "first of its kind" system spanning the visible to the MWIR. The low excess noise ((F(M) ≈ 1) of the e-APDs allows for robust photon detection while operating at a stable linear avalanche gain in the range of 500 to 1000. The ROIC design included a very high gain-bandwidth product RTIA (3x1011 Ohm-Hz) and a 4 ns output digital pulse width comparator. The ROIC had 16 high bandwidth analog and 16 LVDS digital outputs. The 2x8 array was integrated into an LN2 Dewar with a custom LCC and daughter board design that preserved high bandwidth analog and digital signal integrity. The 2x8 e-APD arrays were fabricated on 4.3 μm cutoff HgCdTe and operated at 84 K. The measured dark currents were approximately 1 pA at 13 V bias where the measured APD gain was 500. This translates to a predicted dark current induced dark count rate of less than 20 KHz. Single photon detection was achieved with a photon pulse SNR of 13.7 above the amplifier noise floor. A photon detection efficiency of 50% was measured at a background limited false event rate (FER) of about 1 MHz. The measured jitter was in the range of 550 ps to 800 ps. The demonstrated minimum time between distinguishable events was less than 10 ns.

Linear-Mode Photon Counting (LMPC) detection requires a combined system consisting of a semiconductor avalanche photodiode (APD), a high-gain low-noise amplifier, and a comparator circuit. Modeling these aspects of the system requires a combination of semiconductor detector theory, electronics circuit modeling, and classic decision theory. Because of the disparate skills involved, it is difficult to both model and build such devices. In this paper, we present an end-to-end model of the LMPC detector that contains all the required theory. As part of the decision theory aspect of LMPC technology, we present a three-dimensional Receiver Optimization Characteristic (ROC) curve that contains the key performance aspects of the LMPC as a function of the comparator threshold setting. We present nomenclature and specification methods that provide for unambiguous definitions of the combined-system detector performance for both the fabricators and users of LMPC technology. Finally, we apply the model to a noiseless-gain HgCdTe APD, ROIC, and comparator device being developed by DRS and GEOST in order to demonstrate the photon counting end result, as well as several key intermediate values in the signal chain.

The band structure of Hg1-xCdxTe results in an electron avalanche photodiode (e-APD) that exhibits single carrier, deterministic, noiseless gain. Data and analysis on 5μm cutoff, Hg0.7Cd0.3Te e-APD gated-imaging arrays with sub-photon sensitivity will be presented.

The operation of the mid-wave infrared (MWIR) HgCdTe cylindrical electron injection avalanche photodiode (e-APD) is described. The measured gain and excess noise factor are related to the collection region fill factor. A two-dimensional diffusion model calculates the time-dependent response and steady-state pixel point spread function for cylindrical diodes, and predicts bandwidths near 1 GHz for small geometries. A 2 μm diameter spot scan system was developed for point spread function and crosstalk measurements at 80 K. An electron diffusion length of 13.4 μm was extracted from spot scan data. Bandwidth data are shown that indicate bandwidths in excess of 300 MHz for small unit cells geometries. Dark current data, at high gain levels, indicate an effective gain normalized dark density count as low as 1000 counts/μs/cm2 at an APD gain of 444. A junction doping profile was determined from capacitance–voltage data. Spectral response data shows a gain-independent characteristic.

The next generation of infrared (IR) sensor systems will include active imaging capabilities. One example of such a system is a gated active/passive system. The gated active/passive system promises target detection and identification at longer ranges compared to conventional passive-only imaging systems. A detector that is capable of both active and passive modes of operation opens up the possibility of a self-aligned system that uses a single focal plane. The mid-wave infrared (MWIR) HgCdTe electron injection avalanche photodiode (e-APD) provides state-of-the-art 3 μm to 5 μm performance for the passive mode and high, low-noise, gain in the active mode, and high quantum efficiency at 1.5 μm. Gains of greater than 1000 have been measured in MWIR e-APDs with a gain-independent excess noise factor of 1.3. This paper reports the application of the mid-wave HgCdTe e-APD for near-IR gated-active/passive imaging. Specifically a 128 × 128 focal-plane array (FPA) composed of 40-μm-pitch MWIR cutoff APD detectors and custom readout integrated circuit was designed, fabricated, and tested. Median gains as high as 946 at 11 V bias with noise equivalent photon inputs as low as 0.4 photon were measured at 80 K and 1 μs gate times. This subphoton sensitivity is consistent with the high gains, low excess noise factor, and low effective gain normalized dark-current densities, near or below 1 nA/cm2, that were achieved in these FPAs. A gated imaging demonstration system was designed and built using commercially available parts. High resolution and precision gating was demonstrated in this system by imagery taken at ranges out to 9 km.

The next generation of IR sensor systems will include active imaging capabilities. One example of such a system is a gated-active/passive system. The gated-active/passive system promises long-range target detection and identification. A detector that is capable of both active and passive modes of operation opens up the possibility of a self-aligned system that uses a single focal plane. The detector would need to be sensitive in the 3-5 mu m band for passive mode operation. In the active mode, the detector would need to be sensitive in eye-safe range, e.g. 1.55 mu m, and have internal gain to achieve the required system sensitivity. The MWIR HgCdTe electron injection avalanche photodiode (e-APD) not only provides state-of-the-art 3-5 mu m spectral sensitivity, but also high avalanche photodiode gain without minimal excess noise. Gains of greater than 1000 have been measured in MWIR e-APDs with a gain independent excess noise factor of 1.3. This paper reports the application of the mid-wave HgCdTe e-APD for near-IR gated-active/passive imaging. Specifically a 128x128 FPA composed of 40 mu m pitch, 4.2 mu m to 5 mu m cutoff, APD detectors with a custom readout integrated circuit was designed, fabricated, and tested. Median gains as high as 946 at I I V bias with noise equivalent inputs as low as 0.4 photon were measured at 80 K. A gated imaging demonstration system was designed and built using commercially available parts. High resolution gated imagery out to 9 km was obtained with this system that demonstrated predicted MTF, precision gating, and sub 10 photon sensitivity.

Electron injection avalanche photodiodes in short-wave infrared (SWIR) to long-wave infrared (LWIR) HgCdTe show gain and excess noise properties indicative of a single ionizing carrier gain process. The result is an electron avalanche photodiode (EAPD) with “ideal” APD characteristics including near noiseless gain. This paper reports results obtained on long-, mid-, and short-wave cutoff infrared Hg1−xCdxTe EAPDs (10 µm, 5 µm, and 2.2 µm) that use a cylindrical “p-around-n” front side illuminated n+/n-/p geometry that favors electron injection into the gain region. These devices are characterized by a uniform, exponential, gain voltage characteristic that is consistent with a hole-to-electron ionization coefficient ratio, k=αh/αe, of zero. Gains of greater than 1,000 have been measured in MWIR EAPDS without any sign of avalanche breakdown. Excess noise measurements on midwave infrared (MWIR) and SWIR EAPDs show a gain independent excess noise factor at high gains that has a limiting value less than 2. At 77 K, 4.3-µm cutoff devices show excess noise factors of close to unity out to gains of 1,000. A noise equivalent input of 7.5 photons at a 10-ns pulsed signal gain of 964 measured on an MWIR APD at 77 K provides an indication of the capability of this new device. The excess noise factor at room temperature on SWIR EAPDs, while still consistent with the k=0 operation, approaches a gain independent limiting value of just under 2 because of electron-phonon interactions expected at room temperature. The k=0 operation is explained by the band structure of the HgCdTe. Monte Carlo modeling based on the band structure and scattering models for HgCdTe predict the measured gain and excess noise behavior.