This study reports the design and investigation of a hybrid heterojunction photodetector based on cascaded energy transfer among ZnO colloidal quantum dots (QDs), poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT), and 6,13-bis(tri-isopropylsilyl-ethynyl) pentacene (TIPS-pentacene TIPS-P). ZnO QDs were synthesized using a hot-injection method to achieve size-controlled, the nanocrystals with an average diameter of 2.21 nm, smaller than the exciton Bohr’s radius of ZnO ( 2.87 nm). The hybrid thin film was fabricated via sequential spin-coating to form a ZnO QDs/F8BT: TIPS-P multilayer on ITO substrates, followed by Ag electrode deposition. The optical absorption and photoluminescence analyses reveal strong spectral overlap among the components, facilitating efficient Förster resonance energy transfer (FRET). The estimated Förster critical distances (R0) of 33 Å for ZnO QDs → F8BT and 34 Å for F8BT → TIPS-P confirm the feasibility of cascaded non-radiative energy transfer. Time-resolved photoluminescence (TRPL) decay studies demonstrate a multiexponential behaviour indicative of energy migration and exciton transfer across the interfaces. Electrical characterization under illumination shows a photocurrent enhancement at 660 nm, validating the extended visible response through organic sensitization. Capacitance-voltage (C-V) and Nyquist analyses reveal frequency-dependent interfacial charge dynamics, with illumination inducing higher impedance and charge relaxation behaviour. The results establish the ZnO QDs/F8BT: TIPS-P system as an efficient cascaded heterojunction, combining the high mobility of TIPS-P, the strong visible absorption of F8BT, and the UV sensitivity of ZnO QDs. This work demonstrates a promising strategy for broadband, solution-processable hybrid photodetectors with enhanced exciton dissociation and charge transport efficiency.

In this paper, we present a concise report on a data-driven approach for predicting and designing broadband photodetectors that incorporate Zinc Oxide (ZnO) and Titanium Dioxide (TiO2), two semiconducting materials valued for their wide band gaps, optical transparency, and chemical stability. In these devices, performance is evaluated using responsivity, which measures the amount of photocurrent generated per unit of incident optical power. The framework utilizes essential physical parameters, such as wavelength, film thickness, device dimensions, and optical power, to train a range of regression models, including linear regression, decision trees, random forests, Gradient boosting, and XGBoost. Alongside forward prediction, the framework also enables inverse design, where suitable device configurations are identified for a specified responsivity goal. This capability reduces the need for time-intensive simulations or iterative testing.

In the past decade, two dimensional (2D) materials have attracted significant scientific interest due to their exceptional physicochemical, electronic, and optical properties. Materials such as graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), transition metal oxides (TMOs), and black phosphorus exhibit remarkable sensitivity to minute external perturbations, making them highly promising for quantum sensing applications. This review focuses on the synthesis and growth strategies of 2D materials, highlighting recent progress in both top down and bottom up approaches, including Exfoliation, Chemical Vapor Deposition (CVD), Pulsed Laser Deposition (PLD), Atomic Layer Deposition (ALD) and Molecular Beam Epitaxy (MBE). A critical comparison of these techniques is presented to identify optimal growth routes for achieving high quality materials with controlled thickness, crystallinity, and defect density. Furthermore, the fundamental principles of quantum sensing are discussed, with particular emphasis on defect engineered quantum states and their role in enhancing sensing performance. The integration of 2D materials into next generation quantum technologies and their emerging applications are also examined. Finally, this review outlines the key challenges associated with scalable synthesis, defect control, and material stability, and provides future perspectives on the development of advanced quantum sensing platforms, including the potential role of artificial intelligence in guiding material design and growth optimization.

In this paper, we present a concise report on wide bandgap semiconductor-based FET structure integrated with Al mu-Interdigitated electrodes (mu-IDEs) and Al2O3 as gate dielectric material. The electrical performance of fabricated Al/Al2O3/Cl-TiO2/Al mu-IDEs based field effect transistors (FETs) exhibited the threshold voltage of similar to -0.35 V, generous sub threshold swing of similar to 105 mV/dec, substantial I-ON/I-OFF ratio of similar to 10(4), transconductance of similar to 1 mu S, significantly high electron mobility of similar to 5.95 cm(2)/V.s at V-ds= 2V and low gate leakage current of similar to 5 & lowast;10(-10)A/cm(2) at V-gs = -2V. Therefore, moderate threshold voltage, generous sub-threshold swing, robust current saturation ultra-low off-state leakage current and low operating voltage of the fabricated Al/Al2O3/Cl-TiO2/Al mu-IDEs, FETs prove its potential for next generation (NG) wide bandgap field effect transistors applications.

In this paper we present a succinct numerical simulation report on high-performance CH3NH3Pb(I1₋ₓClₓ)3 halide perovskite-based sol ar cells (PSCs) using SCAPS-1D tools. Ours investigation involoves the depth analysis of impact of ETLs and HTLs layer on CH3NH3Pb(I1₋ₓClₓ)3 perovskite-based solar cell to augment quantum efficiency. Finally, we achieved the highest efficiency, fill factor, Jsc and Voc of ~24.98%, ~85.19%, ~23.32 mA/cm2 and ~1.257 volts respectively with FTO/ZN/CH3NH3Pb(I1-XClX)3/PEDOT: PSS/Au inverted structure. Apart from this, we also investigated the effect of thickness of the perovskite layer CH3NH3Pb(I1-XClX)3 and temperature (300 to 450 K) on the simulated perovskite solar cell.

We report the enhanced ultraviolet (UV) photodetection performance of a size-controlled silver nanoparticle (Ag NP) doped camphorsulfonic acid (CSA) doped polyaniline (PANI) composite with a cost effective approach. The uniform dispersion and controlled size (∼5 nm) of Ag NPs within the CSA-PANI matrix are prepared by using the water-in-oil microemulsion technique and chemical sol-gel route. The surface morphology of prepared Ag nanoparticles doped CSA-PANI has been examined by transmission electron microscopy (TEM). The integration of Ag NPs to CSA-PANI contributes to increased carrier mobility and conductivity of the samples. The optoelectronics properties of the fabricated photodetector have been examined using a semiconductor parametric analyzer for biased voltages of −1 to 1 V. A rise time of ∼2.7 ms and a fall time of ∼1.9 ms have been observed with the proposed device. The synergistic effect of Ag size control and conductive polymer offers a promising path for scalable, low-cost UV photodetectors in optoelectronic applications.

We present a succinct numerical simulation report on improved functioning lead-free CH3NH3SnBr3 perovskite solar cells (PSCs) using SCAPS-1D. Our investigations involve the depth analysis with different hole transport material layers (HTL) and electron transport material layers (ETL) to augment efficiency. Apart from this, we also studied the effect of thickness of active perovskite layer (~0.1–1.2 µm) and temperature analysis (300 to 450 K). The optimized structure FTO/ZnO/CH3NH3SnBr3/Spiro-OMeTAD/Au has achieved efficiency of ~27.26%, Voc of ~1.019 V, Jsc of ~32.47 mA/cm2, and FF of ~ 82.37% respectively.

In this article, we demonstrate the succinct report on Al-doped Zinc Oxide (AZO) and pristine Zinc Oxide (ZnO) based ultraviolet photodetector device fabrication on the glass substrate. Pristine Zinc oxide (ZnO) and Al-doped ZnO (AZO) nanoparticles were prepared using a simple chemical sol-gel route. The prepared ZnO and Al-doped ZnO (AZO) nanoparticles have been characterized using XRD, and high-resolution SEM for phase formation, and surface morphology respectively. XRD graph confirmed the formation of the wurtzite hexagonal structure of ZnO. The device performance was measured using a semiconductor parametric analyzer with a UV light source for -2V to 2V.

The Internet of Things (IoT) is a rapidly growing network of interconnected devices that has the potential to revolutionize many industries and sectors. However, IoT devices are often vulnerable to security and reliability threats due to their limited resources and the challenging environments in which they are deployed. This study proposes a secure and reliable cognitive radio network (SAR-CRN) architecture for IoT applications. Leveraging cognitive radio (CR) capabilities, SAR-CRN enables efficient spectrum sharing between primary users and resource-limited IoT devices. We propose a two-step relay selection scheme that identifies the optimal relay node capable of correctly decoding the information and retransmitting it with the highest secrecy rate. More specifically, this scheme optimizes relay selection for enhanced security and reliability within the SAR-CRN framework. The performance of the proposed SAR-CRN system is evaluated using a variety of metrics, including the probability of correct decoding ability, and the average secrecy capacity (ASC) and secrecy outage probability (SOP) under both known and unknown channel state information (CSI) scenarios. The result analysis demonstrates that the proposed SAR-CRN system significantly outperforms conventional CR networks (CRNs) in terms of security and reliability, paving the way for secure and reliable communication in resource-constrained IoT environments.

This article presents succinct report on a highly UV sensitive MSM photodetector based on sub 5nm Sn nanoparticles titanium dioxide nanofibers Sn(NPs)-TiO2(NFs) on a glass substrate. Sn nanoparticles-titanium dioxide nanofibers Sn(NPs)-TiO2(NFs) synthesized using the sol-gel route, electrospinning techniques have been used for depositing the layers of (NFs) of diameter ~245nm of Sn(NPs)-TiO2(NFs). Sn(NPs)-TiO2(NFs) exhibit an enhanced sensitivity towards UV illumination as compared to only TiO2(NFs) with a large contrast ratio of ∼40.2, responsivity of ∼400mA/W, detectivity of ~9.05×1011Jones at -1V. The proposed photodetector gives a rise time and fall time of ∼0.4 ms and ∼0.3 ms, respectively.

A stable supramolecular Cu-TMA metallogel was synthesized by using Copper (II) acetate monohydrate and trimesic acid (TMA) as a low molecular weight organic gelator in DMF. The rheological studies confirmed that the synthesized Cu-TMA metallogels have high storage modular. The FT-IR (Fourier-transform infrared spec-troscopy) and HR-MS (High Resolution Mass Spectrometry) analysis confirmed the metal-ligand aggregation in the produced metallogels. Apart, FESEM (Field Emission Scanning Electron Microscopy) and TEM (Transmission electron microscopy) probed the shape and morphology of the synthesized supramolecular metallogel like self -assembled fibrous like structure. However, TGA analysis confirmed the high thermal stability of metallogel. To explore the semiconducting properties of metallogel we calculate the energy band gap and, other electrical properties such as current-voltage characteristics and rectifying behaviour for metal-semiconductor (MS) junction-device have been properly investigated. In addition to this, based on the non-linear rectifying behaviour of the device, we have fabricated an active electronic device a Schottky Diode having high Rectification (Ion/Ioff) ratio. Consequently, our synthesized semiconducting Cu-TMA metallogel is fruitful and efficient and could be applied for various other optoelectronic devices in future.

This paper presents a succinct report on $\mathrm{TiO}_{2}/\mathrm{CH}_{3}\mathrm{NH}_{3}\mathrm{PbI}_{3}$ heterojunction-based device fabricated on an indium tin oxide (ITO) substrate. The sol-gel method was used to synthesize the perovskite CH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> NH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> PbI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> nanoparticles. The tetragonal crystal phase of CH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> NH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> PbI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and the rutile phase of TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> were confirmed by the XRD characterization. When excited with a 403 nm wavelength, an efficient photoluminescence peak was seen at $\sim 775\mathrm{nm}$ in pristine CH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> NH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> PbI <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> and $\mathrm{TiO}_{2}/\mathrm{CH}_{3}\mathrm{NH}_{3}\mathrm{PbI}_{3}$ thin films at room temperature. Lastly, the electrical and optical response of the $\mathrm{TiO}_{2}/\mathrm{CH}_{3}\mathrm{NH}_{3}\mathrm{PbI}_{3}$-based heterojunction device was examined.

This article reports a p-type TIPS-pentacene and n-type colloidal ZnO quantum dots (QDs) organic/ inorganic heterojunction-based ultraviolet (UV) photodetector. The colloidal ZnO QDs of average sizes of ~1.77 nm are synthesized using a hot injection route. A thin film of ZnO colloidal QDs (CQDs) is first grown on an indium-doped tin oxide (ITO)-coated glass substrate using the spin coating method. The TIPS-pentacene organic thin film is then grown on the ZnO CQDs layer by the spin coating method. The photoresponse of the proposed structure is measured for monochromatic light of wavelengths in the range of 300–700 nm. Under 1-V reverse bias operation, the proposed UV-photodetector shows the maximum responsivity, detectivity, and external quantum efficiency (EQE) of ~59.15 A/W, ~ $7.01\times 10$ 13 cmHz 1/2 /W, and ~19877% respectively, at 370-nm wavelength of the incident UV light of 43- ${\mu }\text{W}$ /cm 2 intensity.

This paper reports a ZnO Nanoparticles (NPs)/CH3NH3PbI3/PTB7/MoO3/Ag inverted structure based UV-vi-sible-Near Infrared (NIR) broadband photodetector fabricated on the fluorine-doped tin oxide (FTO) coated glass substrate. ZnO NPs layer acts as the electron transport layer (ETL), CH3NH3PbI3 acts as the active layer, PTB7 acts as the hole transport layer (HTL) and MoO3 is used to optimize the recombination current in the proposed photodetector structure. Spin coating method has been used for depositing the layers of ZnO NPs, CH3NH3PbI3 and PTB7 in the proposed structure while the MoO3 layer has been grown by the thermal evaporation method. The optical measurements over 350-850 nm wavelength range give the maximum photoresponsivity, detectivity and external quantum efficiency (EQE) of-0.36 A/W,-7.8x1012 Jones and-83.67% under-2 V, respectively. The proposed photodetector gives a rise time and fall time of 81 ms and 75 ms, respectively.

In the present study, inorganic-organic hybrid ternary blend of CdSe tetrapod nanocrystals (NCs): PCDTBT: PCBM nanocomposites is prepared and characterized with the help of transmission electron microscopy (TEM) and UV- Visible spectroscopy. The prepared ternary blend nanocomposites film has been spin coated on ZnO nanorods electron transport layer, grown on FTO coated glass substrate by a low-cost hydrothermal method. Herein, we have investigated and successfully demonstrated the high white light photosensitivity as well as photo response properties of ternary blend nanocomposites-based photodetector device. The fabricated device exhibits a stable photo-responses under modulated (ON/OFF) white light from solar simulator. The marked photosensitivity of the photodetector device is as goodly as 567 %. The stable photoresponse and high white light photosensitivity of these ternary nanocomposites may consider to be strong candidate for low-cost solution processed wideband photodetectors.

In this study, we have reported TCAD assessment-based analyses of DC, RF/analog, and linearity/intermodulation distortions of a triple-material-gate (TMG) electrode-based InAs/Si hetero-junction (HJ) TFET on SEL-BOX substrate (STFET). The gate electrode consists of three different metals of work function value 4.2 eV, 4.5 eV, and 4.0 eV in a cascaded manner. The gate dielectric consists of HfO2/SiO2 in a vertically stacked form in the proposed TMG-HJ-STFET structure. The electrical parameters of the proposed STFET structure have been shown to be better than those of the double-material-gate (DMG) and single-material-gate (SMG) based HJ-STFET structures. Numbers of electrical performance parameters such as the electric field, ION, IOFF, ION/IOFF ratio, subthreshold swing (SS), transconductance (gm), parasitic capacitances, and transit frequency (fT) have been investigated for all three HJ-STFETs structures under study. Linearity/intermodulation distortion investigation has been done by analysing of some important linearity parameters such as gm2, VIP2, gm3, VIP3, IIP3, IMD3 and 1-dB compression point. In Addition, we have successfully checked the temperature variation impact on some electrical parameters of the proposed structure, TGM-HJ-STFET.

We report fabrication and characterization of high performance wideband photodetector with inverted device structure based on low bandgap polymer (poly[[4,8-bis [(2 Ethylhexyl) oxy] benzo[1,2-b:4,S-b′]dithiophene-2,6-diyl] [3-fluoro-2-[(2ethylhexyl) carbonyl] thieno [3,4-b] thiophenediyl]] (PTB7)): fullerene ([6, 6]-phenyl C61 butyric acid methyl ester (PCBM)) bulk heterojunction. ZnO nanorods are used to serve dual functions one as an electron transport layer (ETL) second as an active layer. Herein, we successfully demonstrated polymer: fullerene composites-based photodetectors with a wide spectral response from 350 nm to 850 nm. The proposed photodetector at a low external bias of −0.5V exhibits a high value of responsivity greater than ~ 1.23 A/W over the broad spectral range from 350 nm to 850 nm.

The synthesis of a Cu–H4L metallogel and its application in the fabrication of a Schottky diode are illustrated.

This letter reports a PCDTBT: PCBM: CdSe tetrapod shaped nanocrystals (NCs) nanocomposites based hybrid inorganic-organic ultraviolet (UV)-Visible (Vis) photodetector fabricated on fluorine-doped tin oxide (FTO) coated glass substrate. The tetrapod shaped nanocrystals synthesized by solution method are mixed with PCDTBT: PCBM to achieve the desired nanocomposites for the active layer of the device. The ZnO nanorods are used as the electron transport layer (ETL) and a MoOx layer is used for the hole transport layer (HTL) in the proposed device. Under a reverse bias of -2 V, the proposed device showed a responsivity of 1830 mAW(-1) (344 mAW(-1)), detectivity of 1.75 x 10(12) (3.3 x 10(11)) Jones, a rise time of 5.73s (0.02 s) and fall time of 6.41s (0.14 s) at 375 nm (540 nm) UV (Visible) light of 13.1 mu Wcm(-2) (41.2 mu Wcm(-2)) low light intensity.