We present a lateral trench gate SOI-LDMOSFET that uses narrow trenches as channels. The lateral trench gate, which allows the channel current to flow laterally on the trench side walls, decreases its on-resistance because it increases the current spreading area of the device. The specific on-resistance (Rsp) strongly depends on the trench depth, which affects the channel area on the side wall of the trench and the space between the trenches affects the channel density of the device. The Rsp of the suggested devices as a function of the lateral trench depth and the space between the trenches are studied. Three-dimensional numerical simulations with MINIMOS-NT have been performed to investigate the influence of device parameters on the Rsp and the breakdown voltage. The improvement in the current handling capability of the suggested device is about 8.3% compared to the conventional SOI-LDMOSFET.

We present fully three-dimensional simulation results of two-drain and three-drain magnetic field-effect transistors (MAGFET), magnetic sensors based on metal-oxide-semiconductor field-effect transistor (MOSFET) structures. By proper development and discretization of the current density equations comprising the nonzero magnetic field components, a two-drain MAGFET is analyzed at both 77 K and 300 K. The discretization scheme is implemented in the general purpose multidimensional device and circuit simulator MINIMOS-NT which is used to investigate the relative sensitivity, the main figure of merit of any magnetic sensor, as a function of the geometric parameters and bias conditions. Besides, the physical modeling of silicon at 77 K and the Hall scattering factors for the silicon inversion layers are discussed. Our simulation results perfectly match the available experimental data. New in-depth knowledge can be obtained by simulating MOSFET structures at 77 K in the presence of an arbitrary magnetic field.

Optimizing process- and layout-design in the development of modern electronic devices is key to achieve required characteristics. Coming along with the growing complexity of device structures, associated effects must be considered in an even more complex manner. The use of three-dimensional process- and device-simulation tools is inevitable. Because of the huge effort concerning computer resources from three-dimensional simulations it is of big interest to enable efficient ways for optimization, as early as possible in process flow. Hence this work shows, how it was possible, to optimize a high-voltage PMOS transistor before starting a complex three-dimensional device simulation.

State-of-the-art TCAD applications like the multidimensional device simulator MINIMOS-NT require a huge number of different information in addition to the device input data. This information is normally hierarchically structured and covers, e.g., simulation parameters, parameter dependencies, models and their parameters, material information, or circuit descriptions. Therefore, the control system of modem TCAD applications must handle several complex different tasks in an efficient and comfortable manner. To obtain a maximum of flexibility and controllability a new specialized object-oriented database is used.

This paper describes low on-resistance lateral trench gate super-junction LDMOSFETs on SOI. The specific on-resistance ( ) of the SOI-LDMOSFETs is effectively improved by the super-junction concept together with the lateral trench gate. The super-junction helps to increase the doping concentration of the n-drift layer, and the lateral trench gate allow to increase the channel area. It can be achieved to reduce the on-resistance both of the n-drift and channel regions, respectively. Using the threedimensional numerical simulator MINIMOS-NT, we confirm that the of the proposed lateral trench gate superjunction SOI-LDMOSFETs is about 60% of conventional SOI-LDMOSFETs. With the larger n column width than that of the p column the doping in the drift region can be reduced to 70% of the value of standard super-junction devices without degrading the on-resistance. As a result the sensitivity of the breakdown voltage to the charge imbalance can be improved in the proposed device.

Optimizing the electromagnetic performance of MOSbased magnetic sensors requires a deep knowledge of the electro-magnetic force interaction when the device is exposed to a magnetic field in a cryogenic ambient. Analytical approaches derived from numerical simulations are not appropriated under these conditions. Therefore, we use MINIMOS-NT to perform full 3D physics-based simulations of a two-drain MAGFET. The simulation results match very well to the available experimental data at 300 K and 77 K.

We present fully three-dimensional simulation results for a real HBT structure as applied in MMICs. Investigation of the leakage is performed in attempt to explain device behavior in the complete voltage range. The paper gives a justification of the need for three-dimensional simulation and addresses critical development, modeling, and simulation issues.

State-of-the-art TCAD applications like device and process simulators require a huge number of different information in addition to the device input data. Simulation parameters and parameter dependencies, models to use, material information, or circuit descriptions must be handled in an efficient and comfortable manner. Simple input deck files which are just a sequence of static keywords or the use of the command line are no longer sufficient. To obtain a maximum of flexibility we use a specialized object-oriented dynamic database to control the simulators.