Semiconductor quantum dot molecules are considered promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical spectroscopy, we here report on the first demonstration of a coherently controlled interdot tunnel-coupling focusing on the quantum coherence of the optically active trion transitions. We employ ultrafast four-wave mixing spectroscopy to resonantly generate a quantum coherence in one trion complex, transfer it to and probe it in another trion configuration. With the help of theoretical modeling on different levels of complexity, we give an instructive explanation of the underlying coupling mechanism and dynamical processes.

We report on the design of nanohole/nanobeam cavities in ridge waveguides for on-chip, quantum-dot-based single-photon generation. Our design overcomes limitations of a low-refractive-index-contrast material platform in terms of emitter-mode coupling efficiency and yields an outcoupling efficiency of 0.73 to the output ridge waveguide. Importantly, this high coupling efficiency is combined with broadband operation of 9 nm full-width half-maximum. We provide an explicit design procedure for identifying the optimum geometrical parameters according to the developed design. Besides, we fabricate and optically characterize a proof-of-concept waveguide structure. The results of the microphotoluminescence measurements provide evidence for cavity-enhanced spontaneous emission from the quantum dot, thus supporting the potential of our design for on-chip single-photon sources applications.

Quantum photonic circuits with integrated on-demand quantum emitters can act as building blocks for photonic gates and processors with enhanced quantum functionality. To scale up such quantum devices to larger and more powerful systems, eventually reaching the quantum advantage, the scalable integration of many emitters with identical emission wavelengths is of utmost importance. Here, we report on the deterministic integration of self-assembled quantum dots (QDs) in waveguide structures by means of in situ electron beam lithography (EBL). Applying external bias voltages to the p-i-n-doped and electrically contacted quantum circuits allows for spectral fine-tuning of the QDs via the quantum confined Stark effect. We achieve a tuning range of (0.40 ± 0.16) nm, which together with a spectral pre-selection accuracy of (0.2 ± 1.6) nm in the in situ EBL process is on average large enough to tune individual QDs into resonance. Thus, deterministic QD integration with spectral pre-selection in conjunction with Stark tuning of the QD emission wavelength is an attractive combination that has high potential to enable the scalable fabrication of integrated quantum photonic circuits in the future.

Self‐organized semiconductor quantum dots represent almost ideal two‐level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close‐to‐ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra‐stable singlet‐triplet spin qubits for efficient spin‐photon interfaces and for deterministic photonic 2D cluster‐state generation. An advanced quantum dot molecule (QDM) device is realized and excellent optical properties are demonstrated. The device includes electrically controllable QDMs based on stacked quantum dots in a pin‐diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in situ electron beam lithography. A photon extraction efficiency of up to (24 ± 4)% is measured in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single‐photon emission properties with a multi‐photon suppression of g(2)(0)=(3.9±0.5)×10−3 . These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware.

The cover image presents an electrically controllable quantum-dot-molecule (QDM) device which can act as spin–photon interface in quantum communication networks. Electrical contacts enable efficient control of the conversion between stationary qubits and flying qubits, represented by the spin degree of charge carriers in the QDM and emitted photons, respectively. The spin–photon interface includes a monolithically integrated circular Bragg grating at the semiconductor surface to boost the emission of single photons. For further details see article number 2100002 by Stephan Reitzenstein and co-workers.

Spectrally-tunable quantum light sources are key elements for the realization of long-distance quantum communication. A deterministically fabricated single-photon source with a photon extraction efficiency of η =(20 ± 2) %, a maximum tuning range of ΔE = 2.5 meV and a minimum g(2)(τ = 0) = 0.03 ± 0.02 is presented. The device consists of a single pre-selected quantum dot (QD) monolithically integrated into a microlens that is bonded onto a piezoelectric actuator via gold thermocompression bonding. Here, a thin gold layer simultaneously provides strain transfer and acts as a backside mirror for the QD-microlens to maximize the photon extraction efficiency. The QD-microlens structure is patterned via 3D in-situ electron-beam lithography (EBL), which allows us to pre-select and integrate suitable QDs based on their emission intensity and energy with a spectral accuracy of 1 meV for the final device. Together with strain fine-tuning, this enables the scalable realization of single-photon sources with identical emission energy. Moreover, we show that the emission energy of the source can be stabilized to µeV accuracy by closed-loop optical feedback. Thus, the combination of deterministic fabrication, spectral-tunability and high broadband photon-extraction efficiency makes the QD-microlens single-photon source an interesting building block for the realization of quantum communication networks.

In this work, we present a stand-alone and fiber-coupled quantum-light source. The plug-and-play device is based on an optically driven quantum dot delivering single photons via an optical fiber. The quantum dot is deterministically integrated in a monolithic microlens which is precisely coupled to the core of an optical fiber via active optical alignment and epoxide adhesive bonding. The rigidly coupled fiber-emitter assembly is integrated in a compact Stirling cryocooler with a base temperature of 35 K. We benchmark our practical quantum device via photon auto-correlation measurements revealing g(2)(0) = 0.07 ± 0.05 under continuous-wave excitation and we demonstrate triggered non-classical light at a repetition rate of 80 MHz. The long-term stability of our quantum light source is evaluated by endurance tests showing that the fiber-coupled quantum dot emission is stable within 4% over several successive cool-down/warm-up cycles. Additionally, we demonstrate non-classical photon emission for a user-intervention-free 100-hour test run and stable single-photon count rates up to 11.7 kHz with a standard deviation of 4%.

We present an efficient broadband single-photon source which is fabricated by a flip-chip gold-bonding technique and in-situ electron beam lithography. The device comprises a single InGaAs quantum dot that is centered at the bottom of a monolithic mesa structure and located above a gold mirror for enhanced photon-extraction efficiency. We show a photon-extraction efficiency of ηext=(18±2) % into a numerical aperture of 0.4 and a high suppression of multi-photon events from this source with g(2)(0)=0.015±0.009. Our deterministic device with a backside gold mirror can be combined with electrical contacts and piezo-tuning capabilities in future refinements, which represents an important step towards a spectrally tunable plug-and-play quantum-light source with broadband enhancement for photonic quantum networks.

We report on the generation of single-photon pulse trains at a repetition rate of up to 1 GHz. We achieve this speed by modulating the external voltage applied on an electrically contacted quantum dot microlens, which is optically excited by a continuous-wave laser. By modulating the photoluminescence of the quantum dot microlens using a square-wave voltage, single-photon emission is triggered with a response time as short as (281 ± 19) ps, being 6 times faster than the radiative lifetime of (1.75 ± 0.02) ns. This large reduction in the characteristic emission time is enabled by a rapid capacitive gating of emission from the quantum dot, which is placed in the intrinsic region of a p-i-n-junction biased below the onset of electroluminescence. Here, since our circuit acts as a rectifying differentiator, the rising edge of the applied voltage pulses triggers the emission of single photons from the optically excited quantum dot. The non-classical nature of the photon pulse train generated at GHz-speed is proven by intensity autocorrelation measurements with g(2)(0) = 0.3 ± 0.1. Our results combine optical excitation with fast electrical gating and thus show promise for the generation of indistinguishable single photons at rates exceeding the limitations set by the intrinsic radiative lifetime.

We report on a 3D electron beam lithography (EBL) technique using polymethyl methacrylate (PMMA) in the negative-tone regime as a resist. First, we briefly demonstrate 3D EBL at room temperature. Then we concentrate on cryogenic temperatures where PMMA exhibits a low contrast, which allows for straightforward patterning of 3D nano- and microstructures. However, conventional EBL patterning at cryogenic temperatures is found to cause severe damage to the microstructures. Through an extensive study of lithography parameters, exposure techniques, and processing steps we deduce a hypothesis for the cryogenic PMMA's structural evolution under electron beam irradiation that explains the damage. In accordance with this hypothesis, a two step lithography technique involving a wide-area pre-exposure dose slightly smaller than the onset dose is applied. It enables us to demonstrate a >95% process yield for the low-temperature fabrication of 3D microstructures.

We report on enhancing the photon-extraction efficiency (PEE) of deterministic quantum dot (QD) microlenses via anti-reflection (AR) coating. The AR-coating deposited on top of the curved microlens surface is composed of a thin layer of Ta2O5, and is found to effectively reduce back-reflection of light at the semiconductor-vacuum interface. A statistical analysis of spectroscopic data reveals, that the AR-coating improves the light out-coupling of respective microlenses by a factor of 1.57 ± 0.71, in quantitative agreement with numerical calculations. Taking the enhancement factor into account, we predict improved out-coupling of light with a PEE of up to 50%. The quantum nature of emission from QDs integrated into AR-coated microlenses is demonstrated via photon auto-correlation measurements revealing strong suppression of two-photon emission events with g(2)(0) = 0.05 ± 0.02. As such, these bright non-classical light sources are highly attractive with respect to applications in the field of quantum cryptography.

The temperature dependence of the electron-beam sensitive resist CSAR 62 is investigated in its negative-tone regime. The writing temperatures span a wide range from 4 K to room temperature with the focus on the liquid helium temperature regime. The importance of low temperature studies is motivated by the application of CSAR 62 for deterministic nanophotonic device processing by means of in-situ electron-beam lithography. At low temperature, CSAR 62 exhibits a high contrast of 10.5 and a resolution of 49 nm. The etch stability is almost temperature independent and it is found that CSAR 62 does not suffer from peeling which limits the low temperature application of the standard electron-beam resist PMMA. As such, CSAR 62 is a very promising negative-tone resist for in-situ electron-beam lithography of high quality nanostructures at low temperature.

The performance of a deterministic lithographic technology to produce a reliable and accurate fabrication of nanophotonic devices based on epitaxial quantum dots is analyzed. Directly after the selection of qualified quantum dots by low-temperature cathodoluminescence spectroscopy in a scanning electron microscope, the in situ electron beam lithography step is performed. In an optimized process flow, quantum dot positions are identified with an accuracy of 25 nm, and a nanoscale alignment accuracy of the device structures of 24 nm for the emitters and one as low as 65 nm for feature sizes is demonstrated. Such accuracies surpass the performance of previously developed optical in situ lithography techniques, making this site control of quantum dots appropriate deterministic quantum device fabrication.

The success of advanced quantum communication relies crucially on non-classical light sources emitting single indistinguishable photons at high flux rates and purity. We report on deterministically fabricated microlenses with single quantum dots inside which fulfil these requirements in a flexible and robust quantum device approach. In our concept we combine cathodoluminescence spectroscopy with advanced in situ three-dimensional electron-beam lithography at cryogenic temperatures to pattern monolithic microlenses precisely aligned to pre-selected single quantum dots above a distributed Bragg reflector. We demonstrate that the resulting deterministic quantum-dot microlenses enhance the photon-extraction efficiency to (23±3)%. Furthermore we prove that such microlenses assure close to pure emission of triggered single photons with a high degree of photon indistinguishability up to (80±7)% at saturation. As a unique feature, both single-photon purity and photon indistinguishability are preserved at high excitation power and pulsed excitation, even above saturation of the quantum emitter.

We report on an advanced in-situ electron-beam lithography technique based on high-resolution cathodoluminescence (CL) spectroscopy at low temperatures. The technique has been developed for the deterministic fabrication and quantitative evaluation of nanophotonic structures. It is of particular interest for the realization and optimization of non-classical light sources which require the pre-selection of single quantum dots (QDs) with very specific emission features. The two-step electron-beam lithography process comprises (a) the detailed optical study and selection of target QDs by means of CL-spectroscopy and (b) the precise retrieval of the locations and integration of target QDs into lithographically defined nanostructures. Our technology platform allows for a detailed pre-process determination of important optical and quantum optical properties of the QDs, such as the emission energies of excitonic complexes, the excitonic fine-structure splitting, the carrier dynamics, and the quantum nature of emission. In addition, it enables a direct and precise comparison of the optical properties of a single QD before and after integration which is very beneficial for the quantitative evaluation of cavity-enhanced quantum devices.

A novel concept for enhancing the photon-extraction efficiency of nanophotonics structures is presented. We apply in-situ electron beam lithography to enhance the single photon flux of single quantum dots by deterministically aligned microlenses.

The authors report on the application of PMMA, hydrogen silsesquioxane, and AZ nLOF 2070 for electron-beam lithography at temperatures ranging from room temperature down to 6 K. Here, the low temperature range is of particular interest with respect to deterministic quantum-device processing using in-situ cathodoluminescence lithography. With decreasing temperature all resist under investigation show a decrease in sensitivity. In addition, an anomaly is observed for positive-tone PMMA for which the sensitivity rises for temperatures below 30 K. This behavior is explained in terms of a modified chain-scission mechanism that takes into account the sublimation of CO. Furthermore, our studies reveal evidence for a strong influence of the formation of volatile reaction products on PMMA. Alongside swelling of the negative-tone PMMA, an overall increased etch resistance as compared to unexposed PMMA and a decrease in sensitivity of almost one order of magnitude could be observed. This leads us to the assumption that the network-formation in negative-tone PMMA is attributed to a carbonization process rather than cross-linking.

We report on the deterministic integration of single quantum dots in sub-µm sized mesa-structures. The fabrication process is based on a pre-selection of quantum dots by cathodoluminescence spectroscopy and their integration via in-situ electron beam lithography.

We present the modelling and realization of deterministic quantum-light sources with enhanced photon extraction efficiency. The devices are based on single quantum dots being integrated into microlenses by means of in-situ electron-beam lithography.