The isotropic to ferroelectric nematic liquid transition was theoretically studied over one hundred years ago, but its experimental studies are rare. Here we present experimental results and theoretical considerations of novel electromechanical effects of ferroelectric nematic liquid crystal droplets coexisting with the isotropic melt. We find that the droplets have flat pancake-like shapes that are thinner than the sample thickness as long as there is room to increase the lateral droplet size. In the center of the droplets a wing-shaped defect with low birefringence is present that moves perpendicular to a weak in-plane electric field, and then extends and splits in two at higher fields. Parallel to the defect motion and extension, the entire droplet drifts along the electric field with a speed that is independent of the size of the droplet and is proportional to the amplitude of the electric field. After the field is increased above 1 mV μm-1 the entire droplet gets deformed and oscillates with the field. These observations led us to determine the polarization field and revealed the presence of a pair of positive and negative bound electric charges due to divergences of polarization around the defect volume.

Ultrathin Al2O3 interlayers have been grown on silicon (111) substrates using atomic-layer deposition (ALD) and investigated as interlayers prior to AlN growth by metalorganic chemical vapor deposition. The ALD process is carried out at low temperatures with the interlayer thickness systematically varied from 0.9 to 5.1 nm. A reference sample with the standard SiNx interlayer is also investigated. Thin Al2O3 layers (<2 nm) are found to significantly improve the crystal quality of AlN. X-ray diffraction measurements show the total dislocation density is decreased by nearly one order of magnitude for an Al2O3 thickness of 1.7 nm compared with the standard SiNx interlayer. The impact of the interlayer on the AlN strain is studied by x-ray diffraction and Raman spectroscopy measurements. Some reduction in stress is observed when incorporating the 1.7 nm interlayer. A Raman stress factor of −2.6 ± 0.1 cm−1/GPa is obtained for AlN. Surface and interface analysis studied by atomic force microscopy, high-resolution transmission electron microscopy, and x-ray photoelectron spectroscopy indicates sharp atomic alignment between AlN and silicon with a 1.7 nm Al2O3 interlayer.

Ferroelectricity is demonstrated for the first time in Si(100)/SiO2/TiN/HfO2-ZrO2/TiN stack using pulsed laser deposition (PLD) and the effects of temperatures, partial oxygen pressures, and thickness for the stabilization of the ferroelectric phase were mapped. Thin films deposited at a higher temperature and a higher oxygen partial pressure have a higher thickness, demonstrating a better ferroelectric response with ~12 μC/cm2 remnant polarization, a leakage current of 10−7 A (at 8 V) and endurance > 1011 cycles indicative of an orthorhombic crystal phase. In contrast, thin films deposited at lower temperatures and pressures does not exhibit ferroelectric behavior. These films can be attributed to having a dominant monoclinic phase, having lower grain size and increased leakage current. Finally, the effects of ZrO2 as top and bottom layer were also investigated which showed that ZrO2 as the top layer provided better mechanical confinement for stabilizing the orthorhombic phase instead of as the bottom layer.

Herein, simple and scalable approach to enhance the out‐coupling efficiency in organic light‐emitting diodes (OLEDs) is presented. By exposing the 4,4′‐bis[ N ‐(1‐naphthyl‐1‐)‐ N ‐phenylamino]‐biphenyl (NPB) hole transport layer to hydrofluoroether (HFE) solvent for several minutes, a controllable microroughening of the film is achieved, which results in the formation of random scattering centers in the OLED structure. Optimized NPB microroughening for phosphorescent OLED with Ir(ppy)3 emitter leads to luminous efficacy improvement of 23% (from 64 to 79 lm W −1 at 1000 cd m −2 ) without additional external out‐coupling. Angular resolved spectroscopy of the OLED with an internal scattering layer reveals constant color almost independent of the viewing angle and Lambertian intensity distribution.

The occurrence of a smectic-B (Sm-B) phase is demonstrated in concentrated aqueous solutions of "gapped" DNA constructs consisting of fully paired duplexes bridged by a flexible, unpaired strand of nucleotides. The Sm-B phase, identified by small and wide angle x-ray scattering measurements and optical microscopy, develops from a smectic-A (Sm-A) phase with increasing DNA concentration at room temperature. It transitions (reversibly) to the Sm-A when the temperature is raised above similar to 50 degrees C.

Ferroelectric nematic liquid crystals represent not only fascinating, fundamental science, but they also hold promise for new technologies including high-density power storage or sub-millisecond switching information displays. In this work, we describe the synthesis and measurements of the physical properties of a new compound, 4-nitrophenyl 4-[(2,4-dimethoxylbenzoyl)oxy]-2-fluorobenzoate (RT11001). This material exhibits multiple, highly polar, ferroelectric nematic phases that have not been previously reported. We employ a wide range of physical characterisation methods including differential scanning calorimetry (DSC), mass density measurement, optical birefringence, polarising optical microscopy (POM), dielectric spectroscopy, electric current analysis, electro-optical switching, small-angle and wide-angle x-ray scattering measurements to show that RT11001 has multiple, distinct ferroelectric phases. We argue that the highest temperature phase is a polar nematic fluid with non-polar smectic clusters. Directly below appears to be a transition to another polar nematic phase containing polar positionally ordered clusters. Lastly, there are indications of an additional, polar biaxial liquid crystal phase at lower temperatures.

A multistep deposition technique is developed to produce highly oriented diamond films by hot filament chemical vapor deposition (HFCVD) on Si (111) substrates. The orientation is produced by use of a thin, 5–20 nm, Ni interlayer. Annealing studies demonstrate diffusion of Ni into Si to form nickel silicides with crystal structure depending on temperature. The HFCVD diamond film with Ni interlayer results in reduced non-diamond carbon, low surface roughness, high diamond crystal quality, and increased texturing relative to growth on bare silicon wafers. X-ray diffraction results show that the diamond film grown with 10 nm Ni interlayer yielded 92.5% of the diamond grains oriented along the (110) crystal planes with ~ 2.5 µm thickness and large average grain size ~ 1.45 µm based on scanning electron microscopy. Texture is also observed to develop for ~ 300 nm thick diamond films with ~ 89.0% of the grains oriented along the (110) crystal plane direction. These results are significantly better than diamond grown on Si (111) without Ni layer with the same HFCVD conditions. The oriented growth of diamond film on Ni interlayers is explained by a proposed model wherein the nano-diamond seeds becoming oriented relative to the β 1 -Ni 3 Si that forms during the diamond nucleation period. The model also explains the silicidation and diamond growth processes. Article Highlights High quality diamond film with minimum surface roughness and ~93% oriented grains along (110) crystallographic direction is grown on Si substrate using a thin 5 to 20 nm nickel layer. A detailed report on the formation of different phases of nickel silicide, its stability with different temperature, and its role for diamond film texturing at HFCVD growth condition is presented. A diamond growth model on Si substrate with Ni interlayer to grow high quality-oriented diamond film is established.

The recently discovered ferroelectric nematic ( N F ) liquid crystals (LCs) with over 0.04 C m −2 ferroelectric polarization and 10 4 relative dielectric constants, coupled with sub‐millisecond switching, offer potential applications in high‐power super capacitors and low voltage driven fast electro‐optical devices. This paper presents electrical, optical, and electro‐optical studies of a ferroelectric nematic LC material doped with commercially available chiral dopants. While the N F phase of the undoped LC is only monotropic, the chiral N F phase is enantiotropic, indicating a chirality induced stabilization of the polar nematic order. Compared to undoped N F material, a remarkable improvement of the electro‐optical switching time is demonstrated in the chiral doped materials. The color of the chiral mixtures that exhibit a selective reflection of visible light in the chiral N F phase, can be reversibly tuned by 0.02–0.1 V µm −1 in‐plane electric fields, which are much smaller than typically required in full‐color cholesteric LC displays and do not require complicated driving scheme. The fast switchable reflection color at low fields has potential applications for LC displays without backlight, smart windows, shutters, and e‐papers.

A systematic study is reported on the effects of nano-diamond seeding density on the growth, quality, and morphology of diamond films. A process is described to examine nano-diamond seeding densities 4 × 108, 8 × 1010, and 2 × 1012 cm−2 on silicon wafers. The diamond film is grown using hot-filament chemical vapor deposition with CH4/H2/O2 feed gases and varying growth time to determine properties at coalescence and as thickness increases. Polycrystalline morphology is examined by scanning electron and atomic force microscopy. Both vertical and lateral growth rates are found to be higher for sparse seeding prior to coalescence. Following coalescence, the growth rate is similar for all densities. The development of polycrystals is found to be influenced by the initial growth with smaller mean lateral size at higher seeding density and reduced surface roughness that also improves with thickness to reach ≲90 nm at a thickness of 6.4 μm. The crystal quality is examined by micro-Raman spectroscopy from the sample surfaces and line images from cross sections. Narrowing of the diamond phonon peak shows material quality to improve with the thickness, at a given seed density, and as density increases. Concomitant improvements are seen from the relative intensity of the diamond phonon and Raman bands from non-diamond carbon. Cross-section micro-Raman results suggest improved diamond film quality and crystallinity near the substrate interface as well as at the growth surface for the film grown with 2 × 1012 cm−2 seed density compared to 4 × 108 and 8 × 1010 cm−2. X-ray photoelectron spectroscopy confirms these trends at the diamond surface.

Significance Liquid crystalline behavior of DNA has been studied for decades, yet only recently has one of the most fundamental liquid crystal phases—the smectic phase in which rod-like objects assemble into stacks of fluid layers—been demonstrated in this system. Here, we describe distinct bilayer and monolayer smectic phases in solutions of “gapped” DNA (GDNA), consisting of two DNA duplexes connected by a single strand. The smectic order is amphotropic (sensitive to temperature as well as concentration), and the layer structure is stable against significant perturbations of the GDNA construct (e.g., “gap” length variation and asymmetry in duplex lengths). The temperature sensitivity may provide a means to compare end-to-end interaction strengths between DNA duplexes at biologically relevant concentrations.

The effect of precursor stoichiometry is reported on morphology, phase purity, and texture formation of polycrystalline diamond films. The diamond films were deposited on 100-mm Si (100) substrates using hot filament chemical vapor deposition at substrate temperature 720–750 °C using a mixture of methane and hydrogen. The gas mixture was varied with methane concentrations 1.5% to 4.5%. Diamond film thickness and average grain size both increase with increasing methane concentration. Diamond quality was checked using surface and cross-section by ultraviolet micro-Raman spectroscopy. The data show consistent diamond properties across the surface of the film and along the cross-section. XRD pole figure analyses of the films show that 3.0% methane results in preferential orientation of diamond in the 〈111〉 direction, whereas films deposited with 4.5% methane showed texture along the 〈220〉 direction in addition to 〈111〉 which was tilted ~ 23° with respect to the surface normal.

We present small-angle X-ray scattering, polarized optical microscopy and electric current measurements of a sulfur-containing bent-core liquid crystal material for characterization of the layer and director structures, thermally and electrically driven transitions between antiferroelectric and ferroelectric structures and switching properties. It was found that the material has polarization-modulated homochiral synclinic ferroelectric (SmCsPFmod), homochiral anticlinic antiferroelectric (SmCaPA) and racemic synclininc antiferroelectric (SmCsPA) structures that can be reversibly switched between each other either thermally and/or electrically. High switching polarization combined with softness of the liquid crystalline structure makes this compound a good candidate for applications in high-power capacitors and electrocaloric devices.

We report dynamic light scattering measurements of the orientational (Frank) elastic constants and associated viscosities among a homologous series of a liquid crystalline dimer, trimer, and tetramer exhibiting a uniaxial nematic (N) to twist-bend nematic (NTB) phase transition. The elastic constants for director splay (K11), twist (K22) and bend (K33) exhibit the relations K11 > K22 > K33 and K11/K22 > 2 over the bulk of the N phase. Their behavior near the N-NTB transition shows dependency on the parity of the number (n) of the rigid mesomorphic units in the flexible n-mers. Namely, the bend constant K33 in the dimer and tetramer turns upward and starts increasing close to the transition, following a monotonic decrease through most of the N phases. In contrast, K33 for the trimer flattens off just above the transition and shows no pretransitional enhancement. The twist constant K22 increases pretransitionally in both even and odd n-mers, but more weakly so in the trimer, while K11 increases steadily on cooling without evidence of pretransitional behavior in any n-mer. The viscosities associated with pure splay, twist-dominated twist-bend, and pure bend fluctuations in the N phase are comparable in magnitude to those of rod-like monomers. All three viscosities increase with decreasing temperature, but the bend viscosity in particular grows sharply near the N-NTB transition. The N-NTB pretransitional behavior is shown to be in qualitative agreement with the predictions of a coarse-grained theory, which models the NTB phase as a "pseudo-layered" structure with the symmetry (but not the mass density wave) of a smectic-A* phase.