Dynamic photoinduced defect states in metal halide perovskites (MHPs) critically govern the non-equilibrium photophysics, metastability, and long-term performance of optoelectronic devices, such as solar cells. This metastability is evident in steady-state photoluminescence experiments, where the amplitudes increase or decrease depending on the environmental and excitation conditions. Here, we combine excitation-dependent time-resolved photoluminescence (trPL) measurements with parameter estimation via Bayesian optimization coupled with a full Shockley-Read-Hall and diffusion model to quantitatively track defect state formation in Cs0.05FA0.95PbI3 thin films, under continuous 1 sun illumination. This methodology is applied to quantify the evolution of defect distributions in absorbers with two distinct initial optoelectronic qualities, leveraging the sensitivity of trPL decays to defect-assisted non-radiative recombination processes. We show that 21 h of continuous illumination causes the slopes of the differential-lifetime/mean carrier-density plots to converge from initially distinct decay behaviors, which we interpret as a convergence of dominant recombination mechanisms following irradiation. The fitting results further suggest the emergence of trapping species with highly asymmetric capture cross-section ratios. Overall, this study establishes a general diagnostic methodology for tracking carrier-induced degradation pathways in perovskites and other emerging semiconductors.

Understanding the sub-band gap luminescence in Ruddlesden-Popper 2D metal halide hybrid perovskites (2D HaPs) is essential for efficient charge injection and collection in optoelectronic devices. Still, its origins are still under debate with respect to the role of self-trapped excitons or radiative recombination via defect states. In this study, we characterized charge separation, recombination, and transport in single crystals, exfoliated layers, and polycrystalline thin films of butylammonium lead iodide (BA(2)PbI(4)), one of the most prominent 2D HaPs. We combined complementary defect- and exciton-sensitive methods such as photoluminescence (PL) spectroscopy, modulated and time-resolved surface photovoltage (SPV) spectroscopy, constant final state photoelectron yield spectroscopy (CFSYS), and constant light-induced magneto transport (CLIMAT), to demonstrate striking differences between charge separation induced by dissociation of excitons and by excitation of mobile charge carriers from defect states. Our results suggest that the broad sub-band gap emission in BA(2)PbI(4) and other 2D HaPs is caused by radiative recombination via defect states (shallow as well as midgap states) rather than self-trapped excitons. Density functional theory (DFT) results show that common defects can readily occur and produce an energetic profile that agrees well with the experimental results. The DFT results suggest that the formation of iodine interstitials is the initial process leading to degradation, responsible for the emergence of midgap states, and that defect engineering will play a key role in enhancing the optoelectronic properties of 2D HaPs in the future.

Graphitic carbon nitride (gCN) materials have been shown to efficiently perform light-induced water splitting, carbon dioxide reduction, and environmental remediation in a cost-effective way. However, gCN suffers from rapid charge-carrier recombination, inefficient light absorption, and poor long-term stability which greatly hinders photocatalytic performance. To determine the underlying catalytic mechanisms and overall contributions that will improve performance, the electronic structure of gCN materials has been investigated using electron paramagnetic resonance (EPR) spectroscopy. Through lineshape analysis and relaxation behavior, evidence of two independent spin species were determined to be present in catalytically active gCN materials. These two contributions to the total lineshape respond independently to light exposure such that the previously established catalytically active spin system remains responsive while the newly observed, superimposed EPR signal is not increased during exposure to light. The time dependence of these two peaks present in gCN EPR spectra recorded sequentially in air over several months demonstrates a steady change in the electronic structure of the gCN framework over time. This light-independent, slowly evolving additional spin center is demonstrated to be the result of oxidative processes occurring as a result of exposure to the environment and is confirmed by forced oxidation experiments. This oxidized gCN exhibits lower H2 production rates and indicates quenching of the overall gCN catalytic activity over longer reaction times. A general model for the newly generated spin centers is given and strategies for the alleviation of oxidative products within the gCN framework are discussed in the context of improving photocatalytic activity over extended durations as required for future functional photocatalytic device development.

Stability issues could prevent lead halide perovskite solar cells (PSCs) from commercialization despite it having a comparable power conversion efficiency (PCE) to silicon solar cells. Overcoming drawbacks affecting their long-term stability is gaining incremental importance. Excess lead iodide (PbI2 ) causes perovskite degradation, although it aids in crystal growth and defect passivation. Herein, we synthesized functionalized oxo-graphene nanosheets (Dec-oxoG NSs) to effectively manage the excess PbI2 . Dec-oxoG NSs provide anchoring sites to bind the excess PbI2 and passivate perovskite grain boundaries, thereby reducing charge recombination loss and significantly boosting the extraction of free electrons. The inclusion of Dec-oxoG NSs leads to a PCE of 23.7 % in inverted (p-i-n) PSCs. The devices retain 93.8 % of their initial efficiency after 1,000 hours of tracking at maximum power points under continuous one-sun illumination and exhibit high stability under thermal and ambient conditions.

Outstanding optoelectronic properties of mixed tin‐lead perovskites are the cornerstone for the development of high‐efficiency all‐perovskite tandems. However, recombination losses in Sn‐Pb perovskites still limit the performance of these perovskites, necessitating more fundamental research. Here, rubidium iodide is employed as an additive for methylammonium‐free Sn‐Pb perovskites. It is first investigated the effect of the RbI additive on the perovskite composition, crystal structure, and element distribution. Quasi‐Fermi level splitting and transient photoluminescence measurements reveal that the RbI additive reduces recombination losses and increases carrier lifetime of the perovskite films. This finding is attributed to an approximately ten‐fold reduction in the defect density following RbI treatment, as probed using constant final state yield photoelectron spectroscopy. Additionally, the concentration of Sn vacancies is also reduced, and the perovskite film becomes less p‐type both in the bulk and at the interface towards the electron contact. Thus, the conductivity for electrons increases, improving carrier extraction. As a result, the open‐circuit voltage of RbI‐containing solar cells improves by 61 mV on average, with the best efficiency >20%. This comprehensive study demonstrates that RbI is effective at reducing recombination losses and carrier trapping, paving way for a new approach to Sn‐Pb perovskite solar cell research.

Halide perovskite-based photon upconverters utilize perovskite thin films to sensitize triplet exciton formation in a small- molecule layer, driving triplettriplet annihilation upconversion. Despite having excellent carrier mobility, these systems suffer from inefficient triplet formation at the perovskite/annihilator interface. We studied triplet formation in formamidinium-methylammonium lead iodide/rubrene bilayers using photoluminescence and surface photovoltage methods. By studying systems constructed on glass as well as hole-selective substrates, comprising self-assembled layers of the carbazole derivative 2PACz ([2-( 9H-carbazol-9-yl)ethyl]phosphonic acid) on indium-doped tin oxide, we saw how changes in the carrier dynamics induced by the hole-selective substrate perturbed triplet formation at the perovskite/rubrene interface. We propose that an internal electric field, caused by hole transfer at the perovskite/rubrene interface, strongly affects triplet exciton formation, accelerating exciton-forming electron-hole encounters at the interface but also limiting the hole density in rubrene at high excitation densities. Controlling this field is a promising path to improving triplet formation in perovskite/annihilator upconverters.

All-perovskite tandem solar cells show great potential to enable the highest performance at reasonable costs for a viable market entry in the near future. In particular, wide-bandgap (WBG) perovskites with higher open-circuit voltage ( V OC ) are essential to further improve the tandem solar cells’ performance. Here, a new 1.8 eV bandgap triple-halide perovskite composition in conjunction with a piperazinium iodide (PI) surface treatment is developed. With structural analysis, it is found that the PI modifies the surface through a reduction of excess lead iodide in the perovskite and additionally penetrates the bulk. Constant light-induced magneto-transport measurements are applied to separately resolve charge carrier properties of electrons and holes. These measurements reveal a reduced deep trap state density, and improved steady-state carrier lifetime (factor 2.6) and diffusion lengths (factor 1.6). As a result, WBG PSCs achieve 1.36 V V OC , reaching 90% of the radiative limit. Combined with a 1.26 eV narrow bandgap (NBG) perovskite with a rubidium iodide additive, this enables a tandem cell with a certified scan efficiency of 27.5%.

A typical perovskite-driven photon upconverter consists of lead halide perovskite thin film layered with a small molecule semiconductor annihilator, such as rubrene. These systems exhibit triplet-triplet annihilation upconversion from the near-infrared to the visible spectrum, with the perovskite film acting as a triplet sensitizer while the rubrene layer functions as the annihilator and emitter [1, 2]. A key feature of this style of upconverter, which removes the conventional excitonic triplet sensitizer and replaces it with the interface of a bulk semiconductor film, is the conversion of free electrons and holes in the perovskite into strongly-bound electron-hole pairs (i.e. excitons) within the organic annihilator film. The process is an emerging application of lead halide perovskite beyond the photovoltaics space, and is interesting both in a photonics role, and as a fundamental investigation into energy transduction at hybrid semiconductor interfaces. This study aims to generate new insights into these perovskite upconverter systems using a combination of transient surface photovoltage and photoluminescence methods. Transient surface photovoltage measures the transient electrical polarization across a semiconductor film stack resulting from carrier diffusion, trapping and recombination following excitation by a short laser pulse. As such, it offers insight into the net charge distribution throughout the sample as well as the rates of various carrier transfer and recombination processes. Photoluminescence,

Nitrogen-vacancy (NV) color centers in diamond are excellent quantum sensors possessing high sensitivity and nano-scale spatial resolution. Their integration in photonic structures is often desired, since it leads to an increased photon emission and also allows the realization of solid-state quantum technology architectures. Here, we report the fabrication of diamond nano-pillars with diameters up to 1000 nm by electron beam lithography and inductively coupled plasma reactive ion etching in nitrogen-rich diamonds (type Ib) with [100] and [111] crystal orientations. The NV centers were created by keV-He ion bombardment and subsequent annealing, and we estimate an average number of NVs per pillar to be 4300 ± 300 and 520 ± 120 for the [100] and [111] samples, respectively. Lifetime measurements of the NVs' excited state showed two time constants with average values of τ1 ≈ 2 ns and τ2 ≈ 8 ns, which are shorter as compared to a single color center in a bulk crystal (τ ≈ 10 ns). This is probably due to a coupling between the NVs as well as due to interaction with bombardment-induced defects and substitutional nitrogen (P1 centers). Optically detected magnetic resonance measurements revealed a contrast of about 5% and average coherence and relaxation times of T2 [100] = 420 ± 40 ns, T2 [111] = 560 ± 50 ns, and T1 [100] = 162 ± 11 μs, T1 [111] = 174 ± 24 μs. These pillars could find an application for scanning probe magnetic field imaging.

We present a double-layer dielectric metasurface obtained by stacking a silicon nanodisk array and a silicon photonic crystal slab with equal periodicity on top of each other. We focus on the investigation of electric near-field enhancement effects occurring at resonant excitation of the metasurface and study its optical properties numerically and experimentally. We find that the major difference in multi-layer metasurfaces when compared to conventional single-layer structures appears to be in Rayleigh–Wood anomalies: they are split into multiple different modes, which are themselves spectrally broadened. As a proof of concept, we cover a double-layer metasurface with a lanthanide-doped up-conversion particle layer and study its interaction with a 1550 nm photoexcitation. We observe a 2.7-fold enhanced up-conversion photoluminescence by using the stacked metasurface instead of a planar substrate, although only around 1% of the up-conversion material is exposed to enhanced near fields. Two mechanisms are identified explaining this behavior: First, enhanced near fields when exciting the metasurface resonantly, and second, light trapping by total internal reflection in the particle layer when the metasurface redirects light into high angle diffraction orders. These results pave the way for low-threshold and, in particular, broadband photon up-conversion in future solar energy and biosensing applications.

In this review, we present important concepts to describe inorganic–organic interfaces in hybrid solar cells. We discuss the formation of hybrid interfaces, provide an introduction to the ground-state electronic structure of the individual components, and detail the overall electronic landscape after combining into a hybrid material for different relevant cases. We then explore the impact of hybrid interfaces on photophysical processes that are crucial for the photovoltaic performance of hybrid solar cells. Within this framework, we discuss methods for hybrid interface modification toward the optimization of hybrid solar cells, such as doping, the application of interlayers, and morphological control.

Photochemical upconversion is performed using champion sensitizers and annihilators to achieve high efficiencies under one sun.

The exciton dynamics of 6,13-bis(triisopropylsilyl-ethynyl) pentacene is investigated to determine the role of excimer and aggregate formation in singlet fission in high concentration solutions.Photoluminescence spectra were measured by excitation with the evanescent wave in total internal reflection, in order to avoid reabsorption effects. The spectra over nearly two magnitudes of concentration were near identical, with no evidence for excimer emission. Time-correlated single-photon counting measurements confirm that the fluorescence lifetime shortens with concentration, and we obtain a bimolecular rate constant of $4\times10^9$\,M$^{-1}$s$^{-1}$ in chloroform. The observed rate constant grows at high concentrations. This effect is modelled in terms of the hard sphere radial distribution function.NMR measurements confirm that aggregation takes place with a binding constant of between 0.14 and 0.43M$^{-1}$. Transient absorption measurements are consistent with a diffusive encounter mechanism for singlet fission, with hints of more rapid singlet fission in aggregates at the highest concentration measured.These data show that excimers do not play the role of an emissive intermediate in exothermic singlet fission in solution, and that while aggregation occurs at higher concentrations, the mechanism of singlet fission remains dominated by diffusive encounters.

Inorganic-organic interfaces are important for enhancing the power conversion efficiency of silicon-based solar cells through singlet exciton fission (SF). We elucidated the structure of the first monolayers of tetracene (Tc), an SF molecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphous Si (a-Si:H) by combining near-edge X-ray absorption fine structure (NEXAFS) and Xray photoelectron spectroscopy (XPS) experiments with density functional theory (DFT) calculations. For samples grown at or below substrate temperatures of 265 K, the resulting ultrathin Tc films are dominated by almost upright-standing molecules. The molecular arrangement is very similar to the Tc bulk phase, with only a slightly higher average angle between the conjugated molecular plane normal and the surface normal (alpha) around 77 degrees. Judging from carbon K-edge X-ray absorption spectra, the orientation of the Tc molecules are almost identical when grown on H-Si(111) and a-Si:H substrates as well as for (sub)mono- to several-monolayer coverages. Annealing to room temperature, however, changes the film structure toward a smaller alpha of about 63 degrees. A detailed DFT-assisted analysis suggests that this structural transition is correlated with a lower packing density and requires a well-chosen amount of thermal energy. Therefore, we attribute the resulting structure to a distinct monolayer configuration that features less inclined, but still well-ordered molecules. The larger overlap with the substrate wave functions makes this arrangement attractive for an optimized interfacial electron transfer in SF-assisted silicon solar cells.

The rational combination of tetracene (Tc) with crystalline silicon (c-Si) could greatly enhance c-Si solar cell efficiencies via singlet fission. The Tc/c-Si energy-level alignment (ELA) is though...

We prepared triplet-triplet annihilation photon upconverters combining thin-film methylammonium lead iodide (MAPI) perovskite with a rubrene annihilator in a bilayer structure. Excitation of the perovskite film leads to delayed, upconverted photoluminescence emitted from the annihilator layer, with triplet excitation of the rubrene being driven by carriers excited in the perovskite layer. To better understand the connections between the semiconductor properties of the perovskite film and the upconversion efficiency, we deliberately varied the perovskite film properties by modifying two spin-coating conditions, namely, the choice of antisolvent and the antisolvent dripping time, and then studied the resulting photon upconversion performance with a standard annihilator layer. A stronger upconversion effect was exhibited when the perovskite films displayed brighter and more uniform photoluminescence. Both properties were sensitive to the antisolvent dripping time and were maximized for a dripping time of 20 s (measured relative to the end of the spin-coating program). Surprisingly, the choice of antisolvent had a significant effect on the upconversion performance, with anisole-treated films yielding on average a tenfold increase in upconversion intensity compared to the chlorobenzene-treated equivalent. This performance difference was correlated with the carrier lifetime in the perovskite film, which was 52 ns and 306 ns in the brightest chlorobenzene and anisole-treated films, respectively. Since the bulk properties of the anisole- and chlorobenzene-treated films were virtually identical, we concluded that differences in the defect density at the MAPI/rubrene interface, linked to the choice of antisolvent, must be responsible for the differing upconversion performance.

Inorganic-organic interfaces are important for enhancing the power conversion efficiency of silicon-based solar cells through singlet exciton fission (SF). We elucidated the structure of the first monolayers of tetracene (Tc), a SF molecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphous Si (a-Si:H) by combining near-edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS) experiments with density functional theory (DFT) calculations. For samples grown at or below substrate temperatures of 265 K, the resulting ultrathin Tc films are dominated by almost uprightstanding molecules. The molecular arrangement is very similar to the Tc bulk phase, with only slightly higher average angle between the conjugated molecular plane normal and the surface normal () around 77°. Judging from carbon K-edge X-ray absorption spectra, the orientation of the Tc molecules are almost identical when grown on H-Si(111) and a-Si:H substrates as well as for (sub)monoto severalmonolayer coverages. Annealing to room temperature, however, changes the film structure towards a smaller  of about 63°. A detailed DFT-assisted analysis suggests that this structural transition is correlated with a lower packing density and requires a well-chosen amount of thermal energy. Therefore, we attribute the resulting structure to a distinct monolayer configuration that features less inclined, but still well-ordered molecules. The larger overlap with the substrate wavefunctions makes this arrangement attractive for an optimized interfacial electron transfer in SF-assisted silicon solar cells.

Crystalline surface-anchored metal-organic framework (SURMOF) thin films made from porphyrin-based organic linkers have recently been used in both photon upconversion and photovoltaic applications. While these studies showed promising results, the question of photostability in this organic-inorganic hybrid material has to be investigated before applications can be considered. Here, we combine steady-state photoluminescence, transient absorption, and time-resolved electron paramagnetic resonance spectroscopy to examine the effects of prolonged illumination on a palladium-porphyrin based SURMOF thin film. We find that phototreatment leads to a change in the material's photoresponse caused by the creation of stable products of photodecomposition - likely chlorin - inside the SURMOF structure. When the mobile triplet excitons encounter such a defect site, a short-lived (80 ns) cation-anion radical pair can be formed by electron transfer, wherein the charges are localized at a porphyrin and the photoproduct site, respectively.